FJL4315OTU [ONSEMI]
NPN外延硅晶体管;
| 型号： | FJL4315OTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 局域网 放大器 晶体管 |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
NPN Epitaxial Silicon
Transistor
FJL4315, 2SC5200
1. Base
2. Collector
3. Emitter
Features
1
• High Current Capability: I = 17 A
C
TO−264−3LD
CASE 340CA
• High Power Dissipation: 150 W
• High Frequency: 30 MHz
• High Voltage: V
= 250 V
CEO
MARKING DIAGRAM
• Wide S.O.A. for Reliable Operation
• Excellent Gain Linearity for Low THD
• Complement to 2SA1943 / FJL4215
Logo
• Thermal and Electrical Spice Models are Available
AYWWZZ
XXXXXX
XXXXXX
• Same Transistor is also Available in:
♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts
♦ TO220 Package, FJP5200 : 80 Watts
♦ TO220F Package, FJPF5200 : 50 Watts
• These Devices are Pb−Free and are RoHS Compliant
Applications
• High−Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
A
= Assembly Location
YWW = Date Code
ZZ = Assembly Lot
xxxxx = Specific Device Code
(J4315O or C5200O)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current (DC)
Base Current
Symbol
Ratings
250
250
5
Units
BV
BV
BV
I
V
V
V
A
A
CBO
CEO
EBO
C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
17
I
B
1.5
Total Device Dissipation (T = 25°C)
P
D
150
W
C
Derate Above 25°C
1.04
W/°C
Junction and Storage Temperature
T , T
−50 ~ +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
(T = 25°C unless otherwise noted)
A
Parameter
Symbol
Max.
Units
Thermal Resistance, Junction to Case
1. Device mounted on minimum pad size.
R
0.83
°C/W
q
JC
hFE CLASSIFICATION
Classification
R
O
h
FE1
55 ~ 110
80 ~ 160
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
February, 2022 − Rev. 3
FJL4315/D
FJL4315, 2SC5200
ELECTRICAL CHARACTERISTICS (Note 2) (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Emitter Cut−Off Current
Conditions
= 5 mA, I = 0
Min.
250
250
5
Typ.
Max.
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= 10 mA, R = ∞
V
C
BE
I
= 5 mA, I = 0
V
E
C
I
V
= 230 V, I = 0
5.0
5.0
160
mA
mA
CBO
CB
EB
CE
CE
E
I
V
V
V
= 5 V, I = 0
C
EBO
h
h
DC Current Gain
= 5 V, I = 1 A
55
35
FE1
C
DC Current Gain
= 5 V, I = 7 A
60
0.4
1.0
30
FE2
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I
= 8 A, I = 0.8 A
3.0
1.5
V
V
C
B
V
BE
(on)
V
V
V
= 5 V, I = 7 A
C
CE
CE
CB
f
T
= 5 V, I = 1 A
MHz
pF
C
C
= 10 V, f = 1 MHz
200
ob
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 20 ms, Duty Cycle ≤ 2%
ORDERING INFORMATION
Part Number
2SC5200OTU
FJL4315OTU
Marking
C5200O
J4315O
Package
Shipping
Remarks
TO−264−3LD (Pb−Free)
TO−264−3LD (Pb−Free)
375 Units / Tube
375 Units / Tube
h
h
O grade
O grade
FE1
FE1
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2
FJL4315, 2SC5200
TYPICAL CHARACTERISTICS
16
14
12
10
8
IB = 200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
V
= 5 V
CE
T
= 125°C
T
= 25°C
J
J
100
10
1
IB = 100mA
IB = 80mA
T
= −25°C
J
IB = 60mA
IB = 40mA
6
4
2
IB = 0
0
1
10
0
2
4
6
8
10 12 14 16 18 20
I , COLLECTOR CURRENT [A]
C
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R Grade)
10000
1000
100
10
T
= 125°C
T
= 25°C
I = 10 Ib
C
V
= 5 V
J
J
CE
100
10
1
T
= −25°C
J
T
= 25°C
J
T
= 125°C
J
T
= −25°C
J
1
0.1
1
10
1
10
I , COLLECTOR CURRENT [A]
C
I , COLLECTOR CURRENT [A]
C
Figure 3. DC Current Gain (O Grade)
Figure 4. Collector−Emitter Saturation Voltage
10000
12
V
= 5 V
CE
I
C
= 10 Ib
10
8
T
= −25°C
T = 25°C
J
J
1000
6
4
T
= 125°C
J
2
100
0
0.0
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , BASE−EMITTER VOLTAGE [V]
BE
I , COLLECTOR CURRENT [A]
C
Figure 5. Base−Emitter On Voltage
Figure 6. Base−Emitter Saturation Voltage
www.onsemi.com
3
FJL4315, 2SC5200
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
IC MAX. (Pulsed*)
10ms*
100ms*
10
1
IC MAX. (DC)
DC
0.1
0.01
*SINGLE NONREPETITIVE
PULSE T =25[oC]
C
1E−6 1E−5
1E−4
1E−3
0.01
0.1
1
1
10
100
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Pulse Duration [s]
Figure 7. Power Derating
Figure 8. Safe Operating Area
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T , CASE TEMPERATURE [°C]
C
Figure 9. Power Derating
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−264−3LD
CASE 340CA
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13860G
TO−264−3LD
PAGE 1 OF 1
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