FJP3305H1TU [ONSEMI]
NPN芯片晶体管;
| 型号： | FJP3305H1TU |
| 厂家： | 
ONSEMI |
| 描述： | NPN芯片晶体管 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2008
FJP3305
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Regulator
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
400
9
V
4
A
ICP
8
2
A
IB
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
75
W
°C
°C
TJ
150
TSTG
-65 ~ 150
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
1
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
700
400
9
Typ.
Max Units
Collector-Base Breakdwon Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IC = 500mA, IE = 0
V
V
V
IC = 5mA, IB = 0
IE = 500mA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
1
1
mA
mA
IEBO
Emitter Cut-off Current
hFE1
hFE2
DC Current Gain *
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
19
8
35
40
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1.0
V
V
V
VBE(sat)
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
4
MHz
pF
Cob
tON
tSTG
tF
65
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5W
0.8
4.0
0.9
ms
Storge Time
ms
Fall Time
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
h
Classification
FE
Classification
H1
H2
hFE1
19 ~ 28
26 ~ 35
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
4.5
VCE = 5V
Ta = 75 O
C
4.0
Ta = 125 O
C
IB = 300mA
3.5
3.0
2.5
Ta = - 25 O
C
Ta = 25 O
C
10
IB = 100mA
2.0
1.5
IB = 50mA
1.0
0.5
0.0
1
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain (O-Grade)
Figure 4. Saturation Voltage (R-Grade)
10
100
IC = 4 IB
VCE = 5V
Ta = 75 O
C
Ta = 125 O
C
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
10
Ta = - 25 O
Ta = 25 O
C
0.1
C
0.01
0.01
1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
Figure 5. Saturatin Voltage (O-Grade)
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
0.1
C
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage (O-Grade)
Figure 8. Switching Time
10
10
IC = 4 IB
tSTG
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
tF
0.1
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.01
0.01
0.1
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area
100
10
IC (Pulse)
IC (DC)
1ms
5ms
10
1
500ms
0.1
0.01
IB1=2A, RB2=0
TC = 25OC
Single Pulse
VCC=50V, L=1mH
1
10
1
10
100
1000
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Power Derating
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Tc[oC], CASE TEMPERATURE
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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