FJP3305O [FAIRCHILD]
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
| 型号： | FJP3305O |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJP3305
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Regulator
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
700
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
400
9
V
I
I
I
4
A
C
8
2
A
CP
B
A
P
Collector Dissipation (T = 25°C)
75
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
-65 ~ 150
STG
©2005 Fairchild Semiconductor Corporation
FJP3305 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
700
400
9
Typ.
Max Units
BV
Collector-Base Breakdwon Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
I
= 500µA, I = 0
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, I = 0
B
= 500µA, I = 0
C
I
I
V
V
= 700V, I = 0
1
1
µA
µA
CBO
EBO
CB
EB
E
Emitter Cut-off Current
= 9V, I = 0
C
h
h
DC Current Gain *
V
V
= 5V, I = 1A
19
8
35
40
FE1
FE2
CE
CE
C
= 5V, I = 2A
C
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
I
= 1A, I = 0.2A
0.5
0.6
1.0
V
V
V
CE(sat)
C
C
C
B
= 2A, I = 0.5A
B
= 4A, I = 1A
B
V
I
I
= 1A, I = 0.2A
1.2
1.6
V
V
BE(sat)
C
C
B
= 2A, I = 0.5A
B
f
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
V
V
V
= 10V, I = 0.5A
4
MHz
pF
T
CE
CB
CC
C
C
= 10V, f = 1MHz
65
ob
ON
STG
F
t
t
t
= 125V, I = 2A
0.8
4.0
0.9
µs
C
I
= -I = 0.4A
B1
B2
Storge Time
µs
R = 62.5Ω
L
Fall Time
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
h
Classification
FE
Classification
H1
H2
h
19 ~ 28
26 ~ 35
FE1
2
www.fairchildsemi.com
FJP3305 Rev. B
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
4.5
VCE = 5V
4.0
Ta = 75 O
C
Ta = 125 O
C
IB = 300mA
3.5
3.0
2.5
Ta = - 25 O
C
Ta = 25 O
C
10
IB = 100mA
2.0
1.5
IB = 50mA
1.0
0.5
0.0
1
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain (O-Grade)
Figure 4. Saturation Voltage (R-Grade)
10
100
VCE = 5V
IC = 4 IB
Ta = 75 O
C
Ta = 125 O
C
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
10
Ta = - 25 O
Ta = 25 O
C
0.1
C
0.01
0.01
1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
Figure 5. Saturatin Voltage (O-Grade)
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
Ta = 25 O
C
1
1
Ta = - 25 O
C
Ta = 125 O
C
Ta = 75 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
0.1
C
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
3
www.fairchildsemi.com
FJP3305 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage (O-Grade)
Figure 8. Switching Time
10
10
IC = 4 IB
tSTG
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
tF
0.1
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.01
0.01
0.1
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area
100
10
IC (Pulse)
IC (DC)
1ms
5ms
10
500µs
1
0.1
0.01
IB1=2A, RB2=0
CC=50V, L=1mH
TC = 25OC
Single Pulse
V
1
1
10
100
1000
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Power Derating
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Tc[oC], CASE TEMPERATURE
4
www.fairchildsemi.com
FJP3305 Rev. B
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
5
www.fairchildsemi.com
FJP3305 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
SPM™
Stealth™
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
QS™
EcoSPARK™
I2C™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
E2CMOS™
i-Lo™
ImpliedDisconnect™
MSXPro™
OCX™
OCXPro™
EnSigna™
FACT™
FACT Quiet Series™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
UltraFET®
UniFET™
VCX™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
SILENT SWITCHER®
SMART START™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
6
www.fairchildsemi.com
FJP3305 Rev. B
相关型号：
FJP3305R
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
FJP3307DH1
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN
FAIRCHILD
FJP3307DH1TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN
FAIRCHILD
FJP3307DH2
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN
FAIRCHILD
FJP3307DH2TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN
FAIRCHILD
FJP3307DTU
High Voltage Fast Switching NPN Power Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明