FJP5200RTU [ONSEMI]
NPN 外延硅晶体管;
| 型号： | FJP5200RTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN 外延硅晶体管 局域网 放大器 晶体管 |
| 文件： | 总7页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2009
FJP5200
NPN Epitaxial Silicon Transistor
Applications
•
•
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
1
•
•
•
•
•
•
•
•
•
High Current Capability: IC = 17A.
High Power Dissipation : 80watts.
High Frequency : 30MHz.
TO-220
1.Base 2.Collector 3.Emitter
High Voltage : VCEO=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to FJP1943
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 : 150 watts
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
250
250
5
V
V
V
A
A
17
IB
1.5
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
80
0.64
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
1.25
°C/W
* Device mounted on minimum pad size
h
Classification
FE
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
FJP5200 Rev. C
www.fairchildsemi.com
1
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=5mA, IE=0
Min. Typ. Max. Units
250
250
5
V
V
IC=10mA, RBE=∞
IE=5mA, IC=0
V
VCB=230V, IE=0
VEB=5V, IC=0
5.0
5.0
µA
µA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A, IB=0.8A
VCE=5V, IC=7A
VCE=5V, IC=1A
VCB=10V, f=1MHz
55
35
160
hFE2
DC Current Gain
60
0.4
1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
3.0
1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
200
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
Ordering Information
Part Number
FJP5200RTU
FJP5200OTU
Marking
J5200R
Package
TO-220
Packing Method
Remarks
hFE1 R grade
hFE1 O grade
TUBE
TUBE
J5200O
TO-220
© 2009 Fairchild Semiconductor Corporation
FJP5200 Rev. C
www.fairchildsemi.com
2
Typical Characteristics
16
14
12
10
8
IB=200mA
IB = 180mA
IB = 160mA
Vce=5V
Tj=125oC
Tj=25oC
IB = 140mA
IB = 120mA
100
10
1
IB = 100mA
IB = 80mA
Tj=-25oC
IB = 60mA
IB = 40mA
6
4
2
IB = 0
0
0
2
4
6
8
10
12
14
16
18
20
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTORCURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R grade )
10000
1000
100
10
Ic=10Ib
Tj=125oC
Tj=25oC
Vce=5V
100
10
1
Tj=-25oC
Tj=25oC
Tj=125oC
Tj=-25oC
1
0.1
1
10
1
10
Ic[A], COLLECTORCURRENT
Ic[A], COLLECTORCURRENT
Figure 3. DC current Gain ( O grade )
Figure 4. Collector-Emitter Saturation Voltage
12
10000
1000
100
VCE = 5V
Ic=10Ib
10
8
Tj=25oC
Tj=-25oC
6
4
Tj=125oC
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
VBE[V], BASE-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation
FJP5200 Rev. C
www.fairchildsemi.com
3
Typical Characteristics
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
0
25
50
75
100
125
150
175
Pulse duration [sec]
TC[oC], CASE TEMPERATURE
Figure 7. Thermal Resistance
Figure 8. Power Derating
© 2009 Fairchild Semiconductor Corporation
FJP5200 Rev. C
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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