FJP5304DTU [ONSEMI]
NPN型三重扩散平面硅晶体管;型号: | FJP5304DTU |
厂家: | ONSEMI |
描述: | NPN型三重扩散平面硅晶体管 晶体管 |
文件: | 总7页 (文件大小:300K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2008
FJP5304D
NPN Silicon Transistor
High Voltage High Speed Power Switch Application
•
•
•
•
Wide Safe Operating Area
Built-in Free Wheeling diodeSuitable for Electronic Ballast Application
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Equivalent Circuit
C
B
TO-220
1
E
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
700
VCEO
VEBO
IC
400
V
12
V
4
A
ICP
8
A
IB
2
A
IBP
* Base Current (Pulse)
4
70
A
PC
Collector Dissipation (TC=25°C)
W
°C
TSTG
Storage Temperature
- 65 ~ 150
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
V
BVCBO
IC = 1mA, IE = 0
700
400
12
BVCEO
BVEBO
ICES
IC = 5mA, IB = 0
V
IE = 1mA, IC = 0
V
VCE = 700V, VEB = 0
VCE = 400V, IB = 0
VEB = 12V, IC = 0
100
250
100
mA
mA
mA
ICEO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
© 2008 Fairchild Semiconductor Corporation
FJP5304D Rev. A
www.fairchildsemi.com
1
hFE
DC Current Gain
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2A
10
8
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
0.7
1.0
1.5
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
1.1
1.2
1.3
Vf
Internal Diode Forward Voltage Drop
IF = 2A
2.5
V
Inductive Load Switching (VCC = 200V)
tstg
tf
Storage Time
Fall Time
IC = 2A, IB1 = 0.4A
VBE(off) = -5V, L = 200μH
0.6
0.1
μs
Resistive Load Switching (VCC = 250V)
tstg
tf
Storage Time
Fall Time
IC = 2A, IB1 = IB2 = 0.4A
TP = 30μs
2.9
μs
0.2
* Pulse test: PW≤300μs, Duty cycle≤2%
Thermal Characteristics
Symbol
Parameter
Max.
1.78
62.5
Units
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FJP5304D Rev. A
www.fairchildsemi.com
2
Typical Characteristics
5
4
3
2
1
0
100
10
1
Vce=5V
I
= 500mA
IB = 450mA
IB = 400mA
IB = 350mA
Ta=125oC
25oC
IBB = 300mA
IB = 250mA
IB = 200mA
-25oC
IB = 150mA
IB = 100mA
IB = 50mA
IB = 0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10
10
Ic=5IB
Ic=5IB
25OC
1
1
Ta=125OC
-25OC
25OC
Ta=125OC
-25OC
0.1
0.01
0.01
0.1
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
1000
VCC = 250V
IC = 5IB1 = -5IB2
tSTG
tSTG
1
100
tF
0.1
tF
VClamp = 200V,
VBE(OFF)=-5V, RBB=0 Ohm,
L=200 uH, IC = 5IB1
0.01
0.1
10
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Resitive Load Switching Time
Figure 6. Inductive Load Switching Time
© 2008 Fairchild Semiconductor Corporation
FJP5304D Rev. A
www.fairchildsemi.com
3
Typical Characteristics (Continued)
100
100
10
TC=25 o
C
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
10
1
1μs
10μs
1
1ms
DC
0.1
0.01
0.1
0.01
10
100
1000
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Forward Bias Safe Operating Area
Figure 2. Reverse Bias Safe Operating Area
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 3. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJP5304D Rev. A
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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