FJP5554TU [ONSEMI]
高压快速开关晶体管;
| 型号： | FJP5554TU |
| 厂家： | 
ONSEMI |
| 描述： | 高压快速开关晶体管 局域网 开关 高压 晶体管 |
| 文件： | 总7页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2013
FJP5554
NPN Silicon Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
2
C
E
1
B
Application
• Electronic Ballast
1
TO-220
• Switch Mode Power Supplies
3
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
FJP5554TU
J5554
TO-220
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
1050
400
V
15
V
4
A
ICP
8
A
IB
2
A
IBP
Base Current (Pulse)
Junction Temperature
4
A
TJ
150
°C
°C
TSTG
Storage Junction Temperature Range
- 55 to +150
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
70
Units
W
PD
Total Device Dissipation
TC = 25°C
(1)
Rθjc
Thermal Resistance, Junction to Case
1.78
°C/W
Note:
1. Rθjc test fixture under infinite cooling condition.
© 2005 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
1
Electrical Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
1050
400
15
Typ.
Max
Units
V
Collector-Base Breakdown Voltage
IC = 500 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
IE = 1 mA, IC = 0
23
1
V
VCB = 1050 V, IE = 0
VCB = 400 V, IB = 0
VEB = 15 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 3 V, IC = 0.8 A
IC = 1 A, IB = 0.2 A
IC = 3.5 A, IB = 1.0 A
IC = 3.5 A, IB = 1.0 A
mA
μA
mA
ICEO
250
1
IEBO
45
20
100
50
hFE
DC Current Gain
0.5
1.5
1.5
1.0
1.2
0.3
V
V
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
tON
tSTG
tF
Base-Emitter Saturation Voltage
Turn-On Time
V
μs
μs
μs
mJ
V
CC =125 V, IC =0.5 A,
IB1 = 45 mA, IB2 = 0.5 A,
RL = 250 Ω
Storage Time
Fall Time
EAS
Avalanche Energy
L = 2 mH
6
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2005 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
2
Typical Performance Characteristics
4.0
VCE=3V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IB=350mA
TC= 75oC
TC= 125oC
TC= - 25oC
100
10
1
IB=150mA
TC= 25oC
IB=100mA
IB=50mA
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC Current Gain
10
VCE=5V
IC=3.5 IB
TC= 75oC
TC= 125oC
TC= 75oC
100
10
1
1
TC= 125oC
TC= - 25oC
TC= 25oC
TC= 25oC
TC= - 25oC
0.1
0.01
0.1
0.01
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
1000
10
IC=3.5 IB
f = 1MHz, IE=0
TC= 25oC
TC= - 25oC
1
100
TC= 125oC
TC= 75oC
0.1
0.1
10
0.1
1
10
1
10
100
IC [A], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Output Capacitance
© 2005 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
10
9
100
10
Single Pulse
TC=25oC
8
Pulse
DC
1ms
100ms
10ms
7
6
1
5
4
VBE(off)=-5V
0.1
RBE(off)=1 ohm
3
VCC=50V, IB1=1.2A
2
1
L=1mH
0.01
10
1000
0
200
400
600
800
1000
1200
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Forward Biased Safe Operating Area
100
80
60
40
20
0
0
25
50
75
100
125
150
TC [oC], CASE TEMPERATURE
Figure 9. Power Derating Curve
© 2005 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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