FLS1800XS [ONSEMI]
260W - 半桥 LLC 谐振控制集成电路，用于照明;
| 型号： | FLS1800XS |
| 厂家： | 
ONSEMI |
| 描述： | 260W - 半桥 LLC 谐振控制集成电路，用于照明 |
| 文件： | 总14页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
⍇✈ꢀᩅ LLC ᛠꢁꢂꢃ IC
FLS-XS
ߋ
ꢄ ᛄ
SIP9 26x10.5
CASE 127EM
FLS−XSꢀ
ߋ
Ϸꢀ✈⍇ѿ╧ᖇЖࡈ
ӥ؋
ꢁႆꢂᏰŔѿ╧რꢁ， ꢃ
ר
ꢂАꢁѿ╧ἡၴ✈。ꢀFLS−XS ߋ
Ϸ͗ᣩᥤლ
ꢄ✄ꢁ ڡ
ឺŔԪᩅᛠᔏꢅᕂࡈ
ᐠꢆŔ⛰ϧሇ,
ÅِӶᚎᙱ、ᖰꢁ⛿ ѻ、ꢇሇ்。FLS−XS
ߋ
Ϸ෦ѿ╧ꢀMOSFET ⛾ᇋꢈቂ૭५ ijlᥡ
ٱ
、ꢁƇ᧥ᥡꢉ҈ꢀᢿ、ގ
̾ꢀἡᖇЖᔏัࡈ
、ꢊ╧ꢋ Жꢀᢿ、ꢌ
؏҈٬
ͥਾƽᒄѿ்ণר
ई⛰ᡇ。ꢁƇ᧥ᥡꢉ҈ꢀ ᢿ͗ᣩ͑ᰁ
ࡊ
ૐὨꢍѿ், ꢀꢎԳᡚŔᑷࡊ
்ѻ̾ƽꢏጜԃൺ。 MOSFET Ŕᇋꢈቂ૭ijlᥡ
ٱ
ᖰꢁ
ꢄሇ, ꢐᵂტဘᚭļእΕ Ŕֱ⛿，
៖்֨෦֭ױ
ቂ૭Ŕᅑڭ
ꢑೃᣠĮ。ş✈ꢒꢀիრ ꢁ(ZVS)
ଇ ဥ ί რ ꢁᔿ ૧, ༧ ᖰ ꢁ ᜨ ╧ 。ZVS ꢓ
༧ꢑĮრꢁࡊ
ૐ, ̡ᚈş✈෯บෘŔꢀΑၒᑐꢀ(EMI) Ể
ࡈ
。 MARKING DIAGRAM
$Y&Z &3&K
FLSxxxxXS
FLS−XS
ߋ
Ϸ
ၴ✈nᛠᔏꢅᕂࡈ
ᒳᐱ, ୢꢃତᛠᔏ、ၖତᛠ ᔏ٬
LLCᛠᔏꢅᕂࡈ
。 $Y
&Z
&3
&K
= onsemi logo
= Assembly Plant Code
= 3−Digit Date Code
ꢅ
= 2−Digits Lot Run Traceability Code
• ꢄԪᩅᛠᔏꢅᕂ
ࡈ
ᒳᐱᖰŻfꢀ50% ՀՊᶴŔָꢊᖇЖ • ꢀꢎꢒꢀիრꢁ(ZVS) ൾ▐ꢁᜨ╧
• ဆᇋꢈቂ૭ijlᥡ
ٱ
ŔͥꢔꢀUniFETt • ꢕෙ MOSFET øӶŔ
ࣚ
ൺᵛԚ៖ꢖ (350 ns) • ࿅ļꢊ╧ᣠꢁ
ꢗꢀ300 kHz FLSxxxxXS = Specific Device Code
xxxx
= 2100, 1800, 1700, 1600
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• ꢀꢎꢔ LV ꢄᐠᣩƽᒄѿ்ᖰŻ҈ꢘ؏ᚭļ
CC
• ƽᒄѿ்: ꢎիƽᒄ(OVP)、ꢎἡƽᒄ(OCP)、ტဘꢎἡ
ƽᒄ(AOCP)、ͥꢔ⋍ꢁឍꢀ(TSD)
• These are Pb−Free Devices
ꢆ✈
• ꢀ✈ LED ⍇ꢀ⁰
• ࿅✊、
ܦ
✊֪į LED: ⍇᎕ਾ • ᐗ⍇: ጧꢙ、ᨶꢙ、ȼᨶच、ლ
ء
֪᎕ꢚڡ
LED ⍇᎕ਾ
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2022 − Rev. 2
FLS2100XSCN/D
FLS−XS
ߋ
ꢄ ᙲꢇꢈ
ꢏᝃ⋍ꢉ៖Ŕᣠꢐᩣꢑ
ꢒ╧
ꢓꢏᝃ⋍ꢉ៖Ŕᣠꢐᩣꢑꢒ
╧
(V = 350 V ~ 400 V)
(V = 350 V ~ 400 V)
IN
IN
(ꢀꢁ 1, 2)
(ꢀꢁ 1, 2)
180 W
120 W
100 W
80 W
ꢉꢊ০ꢋ
ꢌ᎕
ꢍꢎণꢀ
R
Shipping
DS(ON_MAX)
FLS2100XS
FLS1800XS
FLS1700XS
FLS1600XS
9−SIP
(Pb−Free)
−40°C ꢂ
130°C
0.51 W
400 W
475 Units /
Tube
0.95 W
1.25 W
1.55 W
260 W
200 W
160 W
1. ꢃꢄꢅꢀꢆꢁꢇꢈꢉꢂꢃꢊ。
2. ꢋꢌꢄꢍꢄ 50°C ꢎꢏꢐꢑꢒꢓꢔꢅꢕꢇꢈꢖꢗꢘꢙꢃꢊ。
ꢆ✈ꢁᢿꢔ
V
IN
LV
CC
VDL
HV
CC
RT
AR
CS
R
R
MIN
R
MAX
SS
VCTR
C
SS
SG
PG
ࣞ
1. LLC ᛠꢁꢀᩅᨼꢕꢉŔꢖꢗꢆ✈ꢁᢿ www.onsemi.cn
2
FLS−XS
ߋ
ꢄ ᨦꢔ
V
DL
LV
CC
7
1
V
REF
V
REF
9
HV
CC
I
RT
LV good
CC
Internal
Bias
V
REF
3 V
1 V
S
R
I
RT
2I
RT
Q
LUV+/LUV−
HUV+/HUV−
2 V
Level
Low−Side
Time
R
Gate Driver
Shifter
3
2
T
Delay
V
CTR
10
350 ns
Divider
Low−Side
Balancing
Delay
AR
Time
Gate Driver
Delay
V
V
cssH/ CssL
5 k
350 ns
Shutdown
S
Q
R
LV good
CC
TSD
V
AOCP
LV
V
CC
Delay
50 ns
OVP
6
5
PG
SG
V
OCP
Delay
1.5 ms
−1
4
ࣞ
2. ꢘ᮸ᨦꢔ www.onsemi.cn
3
FLS−XS
ߋ
ꢄ ꢙ௪ꢚꢛ
1
2
3
4
5
6
7
8
9
10
V
DL
AR R CS SG PG LV
HV
V
CTR
T
CC
CC
ࣞ
3. ꢌ᎕ꢔ ꢙ௪ꢜꢝ
ꢙ௪ꢋ
Ӏ ᛄ
1
2
V
ꢚꢛꢜꢄꢝƇꢆMOSFET ꢕꢞꢟ，ဘᖅАDŽἡꢝի。
DL
AR
ᵄꢛꢜꢔnईÛĵƽᒄᤚꢁ፻ᒶֱꢎෙ᮸ᨿ؏҈ꢠꢐꢠ。ୢꢚꢛꢜꢠիℝꢂꢆ0.2 V，ᐠᣩƽᒄᤚꢁᲝថ؏҈ၖ✄ᖇ
ꢁ
ࡈ
Ოថꢏ࿅ļ。 ꢚꢛꢜꢔn০ӛꢏ͓⍡ꢊ。⛰ऐ，⇐ᑑ̩ꢡᖅАꢚꢛꢜ，ꢔ᥅ᛓꢉꢂꢠիꢕꢏ͓⍡ꢊ。
ꢚꢛꢜꢔn᪠Ἣἡ᪗ĮƇꢆMOSFET ꢕꢠἡ。͘५ऐ，ꢠի፻ឝҀАꢚꢛꢜ。
ꢚꢛꢜꢄᖇꢁऐ。
3
4
5
R
T
CS
SG
ꢚꢛꢜꢄꢠ⁰ऐ。ꢚꢛꢜᖅАĮƇꢆMOSFET ꢕ⁰ꢟ。
ꢚꢛꢜꢄᖇꢁICꢕŻꢠꢠի。
6
7
PG
LV
CC
ៀᖅ
8
NC
ꢚꢛꢜꢄꢝƇ᧥ꢟ╁҈ꢠᢿꢆIC ꢕŻꢠꢠի。
9
HV
CC
ꢚꢛꢜꢄĮƇꢆMOSFET ꢕꢞꢟ。͘५ऐ，ָի
ࡈ
ᖅАꢚꢛꢜ。 10
V
CTR
www.onsemi.cn
4
FLS−XS
ߋ
ꢄ ভෙᣠꢐ⍭ꢜȜ(ℴ∮
׆
ᣩꢀꢁ，T = 25°C) A
ꢋ ֢ᝐ
−PG)
ᣠ෯Ȝ
500
ᣠꢐȜ
Եĭ
V
V
DS
ꢇꢈꢞ⁰ꢟꢠի(V −V
٬
V CTR CTR
DL
LV
ĮƇꢠ⁰ꢠի
−0.3
−0.3
−0.3
−0.3
−5.0
−0.3
25.0
25.0
V
CC
HV ꢂ V
ꢝƇꢆV ꢛꢜꢂĮƇꢞꢟꢠի
V
CC
CTR
CC
HV
ꢝƇ҈ꢠ⁰ꢠի
525.0
V
CC
V
AR
҈Ო؏ꢛꢜꢉͅꢠի
ꢠἡ᪠Ἣ (CS) ꢛꢜꢉͅꢠի
LV
CC
V
V
CS
V
RT
1.0
V
R
T
ꢛꢜꢉͅꢠի
5.0
50
V
dV
CTR
/dt
̡ᚈꢕĮƇMOSFET ꢞꢟꢠիָӶꢊ
ማꢃ૧ (Note 3)
V/ns
W
P
FLS2100XS
FLS1800XS
FLS1700XS
FLS1600XS
12.0
11.7
11.6
11.5
+150
+130
+150
D
T
°C
°C
ꢇꢈꢃꢄ (ꢀꢁ 4)
ᖈภꢕ࿅ļꢃꢄ (ꢀꢁ 4)
സʈꢄꢍී
ࣔ
J
−40
−55
T
STG
MOSFET ᮸Ϧ
V
ꢞ᧥ꢟꢠի(R = 1 MW)
500
V
V
A
DRG
GS
V
᧥⁰ꢟ (GND) ꢠի
30
32
GS
I
ꢞꢟΒꢠἡ (ꢀꢁ 5)
FLS2100XS
FLS1800XS
FLS1700XS
FLS1600XS
FLS2100XS
DM
23
20
18
I
D
ꢙꢞꢟꢠἡ
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
10.5
6.5
7.0
4.5
6.0
3.9
4.5
2.7
A
FLS1800XS
FLS1700XS
FLS1600XS
ꢌ᎕᮸Ϧ
ᑍʹ
ᖈภኊᤦᑍʹ
5 ~ 7
kgf⋅cm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(֢ᚡᝧ)
ୢꢠիᡕ᪗ꢇꢈ⍭ൺȜጸꢅϷꢂꢕȜී
ࣔ
，ࡈ
Öꢅ்úᔿय。ୢᡕ᪗Ûĵ᪩{ꢆȜ，෦ៀẵƽᚑࡈ
Öꢃ்，ꢅ்úොೄࡈ
Öᔿय，ᅑڭ
ꢅ∰ሇ。
3. ᄳꢇꢈMOSFET
ꢎොꢎ，᠏ᓧᶯꢈMOSFET ꢕማꢃ૧。 4. ᐠᖈภꢕ࿅ļꢃꢄꢇꢈȜַꢆn⋍ƽᒄꢃ்。
5. Βඝꢍַꢆnꢇꢈꢃꢄ。
THERMAL CHARACTERISTICS (ℴ∮
׆
ᣩꢀꢁ，T = 25°C) A
ꢋ ֢ᝐ
ꢃꢢꢅᆣ⋍ℋꢆ(ꢇꢈMOSFET
ꢎො) ᝐȜ
10.44
10.68
10.79
10.89
Եĭ
q
FLS2100XS
FLS1800XS
FLS1700XS
FLS1600XS
°C/W
JC
www.onsemi.cn
5
FLS−XS
ߋ
ꢄ ꢁᷴꢅ(ℴ∮
׆
ᣩꢀꢁ，T = 25°C) A
ꢋ ֢ᝐ
Ἣᚥꢊ
ᣠ෯Ȝ ꢖꢗȜ ᣠꢐȜ Եĭ
MOSFET ᮸Ϧ
BV
ꢞ⁰ꢟϛՏꢠի
500
V
I
I
= 200 mA, T = 25°C
DSS
D
A
= 200 mA, T = 125°C
540
0.41
0.77
1.00
1.25
120
D
A
R
ොꢠℋ
FLS2100XS
FLS1800XS
FLS1700XS
FLS1600XS
FLS2100XS
V
V
V
V
V
= 10 V, I = 6.0 A
0.51
0.95
1.25
1.55
W
DS(ON)
GS
GS
GS
GS
GS
D
= 10 V, I = 3.0 A
D
= 10 V, I = 2.0 A
D
= 10 V, I = 2.25 A
D
t
ijlꢟ
ٱ
֭ױ
ቂ૭ᠢ (ꢀꢁ 6)
= 0 V, I
Diode
= 10.5 A,
ns
rr
Diode
dI
/dt = 100 A/ms
FLS1800XS
FLS1700XS
FLS1600XS
V
= 0 V, I
Diode
= 7.0 A,
160
160
65
GS
Diode
dI
/dt = 100 A/ms
V
= 0 V, I
Diode
= 6.0 A,
GS
Diode
dI
/dt = 100 A/ms
V
= 0 V, I
Diode
= 5.0 A,
GS
Diode
dI
/dt = 100 A/ms
ꢁ⁰᮸Ϧ
I
ȯਾꢞꢠἡ
HV = V = 500 V
CTR
50
120
200
9
mA
mA
LK
CC
I HV
HV ∩ᇡꢠ⁰ꢠἡ
(HV UV+) − 0.1 V
50
100
6
Q
CC
CC
CC
I LV
LV ∩ᇡꢠ⁰ꢠἡ
CC
(LV UV+) − 0.1 V
mA
Q
CC
CC
I HV
HV ࿅ļꢠ⁰ꢠἡ
f = 100 kHz
OSC
mA
mA
O
CC
CC
(RMSȜ)
ៀꢏ͓
= 100 kHz
100
7
200
11
I LV
LV ࿅ļꢠ⁰ꢠἡ
f
OSC
mA
mA
O
CC
CC
(RMSȜ)
ៀꢏ͓
2
4
UVLO ᮸Ϧ
LV UV+
LV ꢠ⁰ᴀիᵃ
ױ
⃐Ȝ(LV ꢏ) 11.2
8.9
12.5
10.0
2.50
9.2
13.8
11.1
V
V
V
V
V
V
CC
CC
CC
LV UV−
CC
LV ꢠ⁰ᴀի
ױ
⃐Ȝ(LV ȼᵂ) CC CC
LV UVH
CC
LV ꢠ⁰ᴀի₾
ࢾ
ꢠի CC
HV UV+
HV ꢠ⁰ᴀիᵃ
ױ
⃐Ȝ(HV ꢏ) 8.2
7.8
10.2
9.6
CC
CC
CC
HV UV−
HV ꢠ⁰ᴀի
ױ
⃐Ȝ(HV ȼᵂ) 8.7
CC
CC
CC
HV UVH HV ꢠ⁰ᴀի₾
ࢾ
ꢠի 0.5
CC
CC
ꢁัꢉ⛾֭᮸Ϧ
V
V−I ᨼᕂ
ࡈ
⃐Ȝꢠի ꢉꢂᔏั⍡ꢊ
R = 5.2 kW
T
1.5
94
48
2.0
100
50
2.5
106
52
V
RT
f
kHz
%
OSC
DC
ꢉꢂՀՊᶴ
f
SS
ͥ᮸ᨿ؏҈Ͻ⍡ꢊ
f
= f + 40 kHz,
OSC
140
kHz
SS
T
R = 5.2 kW
t
SS
ͥ᮸ᨿ؏҈ꢎ
2
3
4
ms
www.onsemi.cn
6
FLS−XS
ߋ
ꢄ ꢁᷴꢅ(ℴ∮
׆
ᣩꢀꢁ，T = 25°C) (continued) A
ꢋ ֢ᝐ
Ἣᚥꢊ
ᣠ෯Ȝ ꢖꢗȜ ᣠꢐȜ Եĭ
ƽᒄ᮸Ϧ
V
Ͻꢠիꢂꢐꢠ C
0.9
0.16
21
1.0
0.20
23
1.1
0.24
25
V
V
CssH
SS
V
Ͻꢠիꢂ̥ꢠ CSS
٬Ო؏
CssL
V
LV ᪗իƽᒄ
CC
LV > 21 V
CC
V
OVP
V
AOCP ⁵Ȝꢠի
−1.0
−0.9
50
−0.8
V
AOCP
t
AOCP ὨⅠꢎ (ꢀꢁ 6)
OCP ⁵ꢠի
V
CS
V
CS
< V
AOCP
ns
V
BAO
V
−0.64 −0.58 −0.52
OCP
t
OCP ὨⅠꢎ (ꢀꢁ 6)
< V
1.0
1.5
2.0
ms
ns
°C
BO
OCP
t
ზꢎꢎ（ĮƇ）®V
᪠Ἣꢂ͓ឍ (ꢀꢁ 6)
AOCP
250
400
DA
T
⋍͓ឍꢄꢍ (ꢀꢁ 6)
+120 +135 +150
SD
ᵛԚ៖ꢂꢃ᮸Ϧ
ᵛԚꢎ (ꢀꢁ 7)
D
350
ns
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(֢ᚡᝧ)
ℴ∮
׆
ᣩꢀꢁ，“ꢠᷴሇ”ጸꢅϷꢂꢕ᠏ᐠϷἫᚥÖ⛻ꢕڡ
ሇ்֢ᝐ。ୢई⛽
Ö⛻ꢣጜ，ڡ
ሇ்ꢅ்⛾“ꢠᷴሇ”ጸ ꢅᐠϷሇ்֢ᝐ⛽⛰ೄ。
6. ꢚ֢ᝐꢤᚎᙱƽᚑ；ꢥ᪗ӛꢅ⛽ȺἫᚥ。
7. ꢦ
ٱ
᪩{֢ᝐꢧꢨАƽᚑ，¥ई EDS（ꢩꢪἫᚥ）᪗ӛꢅ᪠Ἣ。 www.onsemi.cn
7
FLS−XS
ߋ
ꢄ ꢖꢗꢅ்ᅡ
(᪩{ई T = 25°C ⛻Ἣꢨꢕሇꢫꢬ፻ꢭ⛰Ӷ。)
A
1.1
1.05
1
1.1
1.05
1
0.95
0.9
0.95
0.9
−50
0
25
50
75
100
−50
0
25
50
75
100
−25
−25
Temperature (°C)
Temperature (°C)
ࣞ
5. რ͓⍡╧⛾ꢀႆŔ͓ߋ
ࣞ
4. ĮƇMOSFET ՀՊᶴ ⛾ꢀႆŔ͓
ߋ
1.1
1.1
1.05
1
1.05
1
0.95
0.9
0.95
0.9
25
Temperature (°C)
25
Temperature (°C)
−50
0
50
75
100
−50
0
50
75
100
−25
−25
ࣞ
7. ▨ƇVCC (HVCC) ȼᵂ⛾ꢀႆŔ͓ߋ
ࣞ
6. ▨ƇVCC (HVCC) რ⛾ꢀႆŔ͓ߋ
1.1
1.1
1.05
1
1.05
1
0.95
0.9
0.95
0.9
25
Temperature (°C)
25
Temperature (°C)
−50
0
50
75
100
−50
0
50
75
100
−25
−25
ࣞ
8. ĮƇVCC (LVCC) რ⛾ꢀႆŔ͓ߋ
ࣞ
9. ĮƇVCC (LVCC) ȼᵂ⛾ꢀႆŔ͓ߋ
www.onsemi.cn
8
FLS−XS
ߋ
ꢄ ꢖꢗꢅ்ᅡ
(᪩{ई T = 25°C ⛻Ἣꢨꢕሇꢫꢬ፻ꢭ⛰Ӷ。) (continued)
A
1.1
1.05
1
1.1
1.05
1
0.95
0.95
0.9
0.9
−50
0
25
50
75
100
−50
0
25
50
75
100
−25
−25
Temperature (°C)
Temperature (°C)
ࣞ
10. LVCC OVP ꢁꢞ⛾ꢀႆŔ͓ߋ
ࣞ
11. RT ꢁꢞ⛾ꢀႆŔ͓ߋ
1.1
1.1
1.05
1
1.05
1
0.95
0.9
0.95
0.9
0
25
50
75
100
−50
100
−50 −25
−25
75
0
25
50
Temperature (°C)
Temperature (°C)
ࣞ
12. VCssL ⛾ꢀႆŔ͓ߋ
ࣞ
13. VCssH ⛾ꢀႆŔ͓ߋ
1.1
1.05
1
0.95
0.9
−25
25
Temperature (°C)
−50
0
50
75
100
ࣞ
14. OCP ꢁꢞ⛾ꢀႆŔ͓ߋ
www.onsemi.cn
9
FLS−XS
ߋ
ꢄ ꢒ்ᛄ
5.2 kW 4.68 kW
fmax
)
100 (kHz)
+ ǒ
Ǔ
(eq. 2)
Rmin
Rmax
ꢀꢁꢂꢃ。
FLS−XS
ߋ
Ϸᚎᙱ✈nꢉ҈ꢁĮƇꢀMOSFET, ၖ✄ᖰ Żꢀ50% ŔՀՊᶴ。ईꢛঽꢎꢁ+ꢖჵͅfꢀ350 ns Ŕ
ࣚ
ൺᵛԚ៖ꢖ, ୢ
ࣞ
15ᐠЊ。 Gain
1.8
1.6
1.4
1.2
max
normal
ISS
min
f
f
f
f
Dead Time
High−Side
MOSFET
Gate Drive
Low−Side
MOSFET
Gate Drive
1.0
0.8
0.6
Soft−Start
Time
ࣞ
15. MOSFET ᧥ᥡ╁ꢟꢇꢋ 60 70 80 90 100 110 120 130 140 150
Frequency (kHz)
ͥ᮸ᔏั
ࡈ
: FLS−XS
ߋ
Ϸꢜ✈ꢀἡᖇЖᔏัࡈ
, ୢࣞࣞ
16ꢀᐠЊ。 ࣞ
17. ᛠꢁᨼꢕꢉꢖꢗꢠƚᣒএ ईͥꢔ, R ჵ௪ꢀիᖇЖईꢀ2 V, ᔏั
ࡈ
ꢀꢀCT Ŕ̥ T
ꢀꢀἡꢀꢎş✈ꢀἡ֭ꢝʯꢀR ꢀჵ௪ἡϚŔꢀἡꢀ
T
VDL
LV
CC
(I
Ҁ。
) ૭Жງᅷ。
ࣀ
ᵄ, რꢁꢊ╧ꢞȐꢀI CTC
ŔҀ
CTC
V
REF
I
CTC
R
T
S
Q
3 V
1 V
R
min
R
max
FLS−XS
R
R
SS
−Q
I
2I
CTC
CTC
C
T
F/F
AR
CS
C
SS
2 V
R
T
Divider
PG
SG
Gate Drive
3
ࣞ
18. ⍡╧ꢂꢃꢁᢿ ࣞ
16. ꢁἡꢂꢃŔꢁัꢉ ꢄfꢐᵂई؏҈ꢢᶕ, Βϛꢀἡꢎଇ, ꢟϚꢀիꢎΒ,
ꢆᑑꢣҀᚵᛠᔏꢅᕂ
ࡈ
Ŕꢀիƚ。ꢤnᛠᔏꢅ ᕂ
ࡈ
Ŕꢀիƚ⛾რꢁꢊ╧Ᏸ֭ᶴ, ꢄൾ▐ꢌ؏҈, ၴ ⍡╧ᚎਾ:
ࣞ
17Њᛠᔏꢅᕂࡈ
Ŕ͘५ꢀիƚᣒএ, ͖ꢂƚ ⛾ꢀZVSꢀԚিŔრꢁꢊ╧Ᏸ֭ᶴ。ꢟϚꢀիꢀꢎᛓრ
ISS
®Ͻꢁꢊꢀ(f )
ױ
⛻ᑋᖯრꢁꢊ╧, DŽೃꢟϚꢀիლ ֛ꢄᵂ。ईRTჵ௪⛺ꢛᖅꢀRC ꢃତꢀᢿ, Փ
ლ֛ꢌ؏ ҈ꢀᢿ, ୢ
ࣞ
18ᐠЊ。FLS-XSߋ
Ϸڡ
ꢓᚎᣩꢀ3 ms Ŕ ͥꢔꢌ؏҈, ்૿ͭꢔꢌ؏҈ꢀᢿŔϽꢊ╧
Ҁꢀ40 kHz, ई؏҈+ϽŔπꢅრꢁ
و
ꢂ，
ÅꢑĮ ꢀἡꢎΒ, ୢ
ࣞ
19ᐠЊ。ꢥᨗꢌ؏҈ŔϽꢊ╧ᙱ٧
ୢ⛻:
ꢁꢊ╧ꢇጜᖇЖ。
ࣞ
18ЊꢀR ჵ௪Ŕ͘५ꢀᢿꢠਾ, T
͖ꢂ̩ꢂ
ࡈר
ᡖijٱ
ꢛᖅೃꢀR ჵ௪，✈nᛓრꢁ T
ꢊ╧。
ᣠ෯რꢁꢊ
╧ᙱ٧ୢ
⛻: 5.2 kW
fmin
+
100 (kHz)
5.2 kW 5.2 kW
fISS
)
100 ) 40 (kHz)
(eq. 1)
Rmin
+ ǒ
Ǔ
(eq. 3)
Rmin
RSS
ȧൺ̩ꢂᡖij
ٱ
Ŕꢡ٬ꢀի
ꢄꢀ0.2 V, Ϲᣠଇრꢁꢊ╧ Γൺn:
www.onsemi.cn
10
FLS−XS
ߋ
ꢄ (a)
(a)
(a)
(b)
(b)
(b)
ꢀဘ᥅ᛄ，෦ꢌ؏҈ŔϽꢊ╧ᚎਾꢄᛠᔏꢀᢿᛠᔏ
ꢊ╧ꢀ(f ) Ŕlೃ⛹ǭ。ꢌ؏҈៖ꢖꢄꢀRC ៖ꢖဘᝐŔ
LV
CC
O
⛹А
ࢻ
ǭ。RC ៖ꢖဘᝐꢄ: V
AR
t + RSS @ CSS
(eq. 4)
V
CssH
V
CssL
f
s
I
Cr
ISS
f
40 kHz
Control Loop
Take Over
t
t
S/S
stop
(a) Protections are triggered
(b) FLS−XS restarts
ࣞ
21. ꢟᲝꢡ᪠ጜ Time
ƽᒄꢄᢿ：
ࣞ
19. ᨿꢡꢟꢢ⍡╧ꢣᖯ FLS−XS
ߋ
ϷᣩπꢅᏱƽᒄѿ்，ୢꢎἡƽᒄꢀ(O CP)、ტဘꢎἡƽᒄꢀ(AOCP)、ꢎիƽᒄꢀ(OVP)
٬⋍
ꢁ ឍꢀꢀ(TSD)。ꢥ{ƽᒄѿ்ꢄ҈ꢘ؏ᰁჯƽᒄѿ்,
ୢ
ࣞ
22ᐠЊ。 ҈Ო؏：
FLS−XS
ߋ
Ϸ⛺ೃ
Åईꢔꢀ⁰ꢀիᒶֱÛĵͥ ਾƽᒄѿ்៖ൾ▐҈ꢘ؏。ୢ
ࣞ
20٬
ࣞ
21ᐠЊ, ⛰ ំᒶֱƽᒄѿ், M1 რꢁොꢀၖ✄ꢀV−I ꢅᕂ
ࡈ
፻ё ✈。C რꢀ, DŽೃꢀC ꢆֿŔꢀV ꢑೃꢀV 。
ୢϚ▐ᜥꢦእΕ, რꢁꢎӛ෦ঘᵂ, ✄ꢀMOSFET ƽ
ᓡꢁឍ。ᄳꢀLV ꢑೃꢀLV ȼᵂꢀիꢀ10 V ꢀAR ǁ
CC
CC
ח
ꢄꢁꢀၓ៖, ƽᒄѿ்፻ꢘਾ。FLS−XS ईꢀLV Аრꢀի 12.5 V ៖ቂ૭ᵃဘꢏጜ。
ꢗ
SS
SS
Css
CssL
CC
⌖
, ᐠᣩƽᒄѿ்፻ꢘਾ, M1 ꢁឍ，✄ꢀV−I ꢅᕂࡈ
ቂ૭。FLS−XS ꢀꢎꢌ؏҈ͭᴁრრꢁꢎӛ。ୢ
ƽᒄѿ்Ϛ▐ईꢀV ĮnꢀV
LV
CC
٬
ꢀV ꢀၓእΕ⛻,
Css
CssL
CssH
7
რꢁꢎӛ֛Փঘᵂ, V ষঽҀ, DŽೃꢗАꢀV
, ⌖
Css
CssH
LV Good
CC
Internal
Bias
C ꢃ M1 ꢀ。 SS
V
REF
10 / 12.5 V
Auto−Restart
Protection
OCP
AOCP
OVP
Switching
Shutdown
2 V
S
R
Q
“H” = disable
R
T
TSD
−Q
3
2
LV good
V−I Converter
CC
F/F
R
min
R
AR
SS
AR
2
V
CssH
V
CssL
/
5 k
M1
Switching
Shutdown
AR Signal
V
/V
C
CssH CssL
SS
ࣞ
22. ƽᒄᨦꢔ R
Q
S
LV good
CC
OVP
OCP
AOCP
TSD
᪗ἡƽᒄꢅ(OCP)：ꢅᄳ᪠ἫАჵ௪ꢀիᢜೃĮnꢀ
−0.58 V ៖, ꢎἡƽᒄѿ்፻ᒶֱၖ✄ꢀMOSFET ƽᓡꢁ
ឍ。ᚵƽᒄѿ்ᣩ⛰ꢅ1.5 ms Ŕꢁឍზ៖, ✈nꢧᵂ
؏҈ꢖŔꢎ៉ꢁឍ。
ࣞ
20. AR ꢙ௪Ŕꢘ᮸ᨦꢔ ᒶֱƽᒄѿ்
, FLS−XS ईȼᵂ៖ꢖꢀt ͥ፻ё ტဘ᪗ἡƽᒄꢅ(AOCP)：ୢᴁॷἡ
ࡈ
lᥡٱ
ʽ ᢿ, di/dt ꢨဘꢁŔଇꢀἡúईᒶֱꢎἡƽᒄЭἡꢎ
MOSFET。ୢ᪠Ἣჵ௪ꢀիᢜೃĮnꢀ−0.9 V, ᒶֱტ
ဘꢎἡƽᒄ, ✄ẁᣩꢁឍზ៖。
stop
✈, ꢀV ꢑĮၖꢗАꢀV 。FLS−XS Ŕȼᵂ៖ꢖĐ
Css
CssL
٧ୢ
⛻: ᪗իƽᒄꢅ(OVP)：ꢀᄳꢀLV ꢗАꢀ23 V ៖, ᒶֱꢀ
CC
OVP。ᄳָի
ࡈ
Ŕꢩ҉থঔᖰŻꢀV ೃѿ╧რꢁ៖, ş✈ᚵƽᒄѿ்。
Ŧ
Ǔ
}
SS ) RMIN 5 kW
@ NJǒR
CC
tSTOP + CSS
(eq. 5)
ꢌ؏҈៖ꢖ ts/s
ᨙᕎយӛჯ (4) ᚎਾ。 www.onsemi.cn
11
FLS−XS
ߋ
ꢄ ⋍͓ឍꢅ(TSD)：෦ꢀMOSFET
٬ᖇЖ
ꢀIC ਾnԵꢅ PCB ภᓧԷ：
᎕ꢂ, ᣩ҉nᖇЖꢀIC ᪠ἫꢀMOSFET Ŕტဘꢎꢄ。ୢ
ꢄႆᡕꢎଇॶ 130°C, ᒶֱ⋍ꢁឍ。
Ϛ▐ՀՊᶴ⛽ၓጱꢫꢬŔտ
ࣀ
்᠏ꢇָիࡈ
⛿ Ŕꢭ
ࡊ
ૐ、ꢇָիࡈ
ᴁॷֿ⃯ꢀዿŔ⛽धؙ，ؙؙ 。ꢥ᠏ꢀPCB ภꢂRTჵ௪ꢮꢯŔᖇЖ̣Öꢆᑑ⛾Ͻॷ
ꢀἡᢿᅤꢰҋŔ⛰ꢅտ
ࣀ
。ᄳꢁĮƇꢀMOSFET ꢱἡො ꢀ៖，Ͻॷꢀἡ⛿ŔΑचយ
ױ
ֱ⛿ָ。͗ᣩ⛽
᪗ꢄℋ᪫ꢃꢄἡዿἫ：
ߋ
Ϸڡ
᪠Ἣ⃯ᥡꢀἡ, ၖÅᵄ⛿⛰ꢅꢀի, ୢ ࣞ
23٬
ࣞ
24ᐠЊ。ԪỂ᪠Ἣយჯ̡ᚈ᪠Ἣꢀꢧ⛿Į ѿ૧, Ħ᠏͈Ể᪠ἫយჯŔ᪠Ἣǁ
ח
͗ᣩꢪĮრꢁࡊ
ૐ。
យ
ױ
ŔΑचúොೄꢀἡᾑἡϚꢀR ꢀჵ௪，® T
ָᶯꢅꢀMOSFET Ŕොꢀ៖ᶕ。ᄚ⊨ლᙾईꢀPCB ภ
ꢂ෦ꢀR ꢀჵ௪ꢮꢯŔᖇЖ̣Ö⛾Ͻॷꢀἡ▏ᢿϦრ。
T
ࣞ
25ЊՀՊၓጱእΕ⛻Ŕൾū。 Cr
Ns
Ns
Np
Control
IC
V
CS
I
ds
CS
SG
PG
R
sense
V
CS
I
ds
ࣞ
23. ꢀỂꢂἫ ࣞ
25. ՀՊᶴꢥጱꢦꢧ I
ds
V
CS
Cr
Control
IC
V
CS
Ns
Ns
Np
CS
SG
PG
R
sense
I
ds
ࣞ
24. ꢤỂꢂἫ UniFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.cn
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SIP9 26x10.5
CASE 127EM
ISSUE O
DATE 31 DEC 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13718G
SIP9 26x10.5
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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© Semiconductor Components Industries, LLC, 2019
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onsemi,
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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