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June 2015

FPF2G120BF07AS

F2, 3ch Boost module with NTC

General Description

* typical appearance

The FPF2G120BF07AS is the 3ch boost topology which is pro-

viding an optimized solution for the multi-string solar application.

And the integrated high speed field stop IGBTs and SiC diodes

are providing lower conduction and switching losses. Further-

more, the screw clamp provides a fast and reliable mounting

method.

Electrical Features

Package Code: F2

ꢀ

High Efficiency

Low Conduction and Switching Losses

High Speed Field Stop IGBT

SiC SBD for Boost Diode

Built-in NTC for Temperature Monitoring

Mechanical Features

ꢀ

Compact Size : F2 Package

Soldering Pin

Al₂O₃Substrate with Low Thermal Resistance

Applications

ꢀ

Solar Inverter

Related Materials

ꢀ

AN-5077: Design Considerations for High Power Module

(HPM)

Internal Circuit Diagram

Package Marking and Ordering Information

Device

Device Marking

FPF2G120BF07AS

FPF2G120BF07ASP

Package

PCM

X

Packing Type

Quantity / Tray

FPF2G120BF07AS

FPF2G120BF07ASP

F2

Tray

14

O

FPF2G120BF07AS Rev. 1.1

1

www.fairchildsemi.com

Absolute Maximum Ratings T_C= 25^oC unless otherwise noted.

Symbol

Description

Condition

Rating

Units

Boost IGBT

V_CES

Collector-Emitter Voltage

Gate-Emitter Voltage

650

V

V_GES

± 20

Transient Gate-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

± 25

V

T_C= 80 °C, T_Jmax= 175 °C

limited by T_Jmax

I_C

40

80

A

I_CM

P_D

A

Maximum Power Dissipation

Operating Junction Temperature

156

W

°C

- 40 to + 150

T_J

Protection Diode

Peak Repetitive Reverse Voltage

650

V_RRM

I_F

V

A

Continuous Forward Current

Maximum Forward Current

T_C= 80 °C, T_Jmax= 175 °C

60Hz Single Half-Sine Wave

15

I_FM

30

150

A

I_FSM

I²t - value

P_D

Non-repetitive Peak Surge Current

Surge Current Integral Value

Maximum Power Dissipation

Operating Junction Temperature

A

93

A²s

W

°C

140

- 40 to + 150

T_J

Boost Diode

V_RRM

I_F

Peak Repetitive Reverse Voltage

Continuous Forward Current

Maximum Forward Current

650

V

A

T_C= 80 °C, T_Jmax= 175 °C

60Hz Single Half-Sine Wave

15

I_FM

30

A

I_FSM

I²t - value

P_D

Non-repetitive Peak Surge Current

Surge Current Integral Value

Maximum Power Dissipation

Operating Junction Temperature

120

A

60

98

A²s

W

°C

T_J

- 40 to + 150

Module

T_STG

Storage Temperature

Isolation Voltage

- 40 to + 125

2500

°C

V

V_ISO

AC 1 min.

Iso._Material Internal Isolation Material

Al₂O₃

2.0 to 5.0

11.5

-

T_MOUNT

Mounting Torque

Nꢀm

mm

Creepage

Terminal to Heat Sink

Terminal to Terminal

Terminal to Heat Sink

Terminal to Terminal

6.3

Clearance

10.0

5.0

FPF2G120BF07AS Rev. 1.1

2

www.fairchildsemi.com

Electrical Characteristics T_C= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min. Typ. Max. Units

Boost IGBT

Off Characteristics

BV_CES

I_CES

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

V_GE= 0 V, I_C= 1 mA

650

-

V

V_CE= V_CES, V_GE= 0 V

V_GE= V_GES, V_CE= 0 V

-

250

± 2

A

I_GES

Gate-Emitter Leakage Current

On Characteristics

V_GE(th)

Gate-Emitter Threshold Voltage

V_GE= V_CE, I_C= 40 mA

I_C= 40 A, V_GE= 15 V

3.9

5.1

1.55

1.85

3.3

6.8

2.2

-

V

V_CE(sat)

Collector-Emitter Saturation Voltage

-

I

_C= 40 A, V_GE= 15 V, T_C= 125 °C

V

R_LEAD

Lead Resistance of Pin to Chip

per Chip

-

m

Switching Characteristics

Turn-On Delay Time

V_CC= 300 V

t_d(on)

t_r

t_d(off)

t_f

-

24

-

ns

I

_C= 40 A

V_GE= 15 V

_G= 15 

Inductive Load

_C= 25 °C

Rise Time

-

Turn-Off Delay Time

Fall Time

132

17

-

ns

R

-

ns

T

E_ON

E_OFF

t_d(on)

t_r

Turn-On Switching Loss per Pulse

Turn-Off Switching Loss per Pulse

Turn-On Delay Time

0.40

0.28

22

-

mJ

ns

-

V_CC= 300 V

_C= 40 A

V_GE= 15 V

_G= 15 

Inductive Load

_C= 125 °C

-

I

Rise Time

27

-

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

148

17

-

ns

R

-

ns

T

E_ON

E_OFF

Q_g

Turn-On Switching Loss per Pulse

Turn-Off Switching Loss per Pulse

Total Gate Charge

0.59

0.37

65

-

mJ

nC

°C/W

-

V_CC= 300 V, I_C= 40 A, V_GE= 15 V

R_JC

Thermal Resistance of Junction to Case per Chip

-

0.96

Protection Diode

V_F

Diode Forward Voltage

I_F= 15 A

-

1.05

0.95

2.4

-

1.4

-

V

I_F= 15 A, T_C= 125 °C

per Chip

R_LEAD

I_R

Lead Resistance of Pin to Chip

Reverse Leakage Current

-

m

A

V_R= 650 V

250

1.07

R_JC

Thermal Resistance of Junction to Case per Chip

-

°C/W

Boost Diode

V_F

Diode Forward Voltage

I_F= 15 A

-

1.45

1.75

2.8

-

1.9

V

I_F= 15 A, T_C= 125 °C

per Chip

-

R_LEAD

I_R

Lead Resistance of Pin to Chip

Reverse Leakage Current

Reverse Recovery Current

Total Capacitive Charge

-

m

A

A

V_R= 650 V

60

I_rr

V_R= 300 V, I_F= 15 A,

di / dt = 1390 A/us

9.2

60

-

Q_C

-

nC

J

T_C= 25 °C

E_rec

I_rr

Reverse Recovery Energy

Reverse Recovery Current

Total Capacitive Charge

4.9

9.2

65

-

V_R= 300 V, I_F= 15 A,

di / dt = 1390 A/us

-

A

Q_C

-

nC

J

T_C= 125 °C

E_rec

R_JC

Reverse Recovery Energy

4.9

-

Thermal Resistance of Junction to Case per Chip

1.52

°C/W

FPF2G120BF07AS Rev. 1.1

3

www.fairchildsemi.com

Electrical Characteristics T_C= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min. Typ. Max. Units

NTC(Thermistor)

R_NTC

Rated Resistance

T_C= 25 °C

T_C= 100 °C

T_C= 25 °C

B_25/50

-

10

936

-

k



Tolerance

- 3

-

+ 3

20

-

%

P_D

Power Dissipation

B-Constant

-

mW

K

B_Value

-

3450

3513

B_25/100

-

K

FPF2G120BF07AS Rev. 1.1

4

www.fairchildsemi.com

Typical Performance Characteristics

Fig 1. Typical Output Characteristics

- IGBT

Fig 2. Typical Output Characteristics

- IGBT

80

VGE = 19 V

17 V

VGE = 19 V

17 V

15 V

60

40

20

0

60

40

20

0

13 V

11 V

9 V

13 V

11 V

9 V

TC = 25 °C

TC = 125 °C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Collector-Emitter Voltage, V_CE[V]

Fig 3. Typical Saturation Voltage Characteristics

Fig 4. Switching Loss vs. Collector Current

- IGBT

80

2.0

with an inductive load

VCE = 300 V

VGE = 15 V

Common Emitter

VGE = 15 V

1.6

TC = 25°C

TC = 80°C

Rg = 15 

60

TC = 25 °C

TC = 125°C

TC = 125 °C

E_ON

1.2

0.8

0.4

0.0

40

20

0

E_OFF

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

10

20

30

40

50

60

70

80

Collector-Emitter Voltage, V_CE[V]

Collector Current, I_C[A]

Fig 5. Switching Loss vs. Gate Resistance

- IGBT

Fig 6. Transient Thermal Impedance

- IGBT

1.2

10

with an inductive load

VCE = 300 V

1.0

0.8

0.6

0.4

0.2

0.0

VGE = 15 V

IC = 40 A

E_ON

1

TC = 25 °C

TC = 125 °C

0.5

0.3

0.1

0.01

1E-3

0.05

P_DM

0.02

0.01

E_OFF

t₁

t₂

Single Pulse

Duty Factor, D = t1/t2

TJ - TC = PDM*ZJC(t)

0

10 20 30 40 50 60 70 80 90 100

1E-5

1E-4

1E-3

0.01

0.1

1

Gate Resistance, R_G[]

Rectangular Pulse Duration, t₁[sec]

FPF2G120BF07AS Rev. 1.1

5

www.fairchildsemi.com

Typical Performance Characteristic

Fig 7. Typical Forward Voltage Drop

- Protection Diode

Fig 8. Transient Thermal Impedance

- Protection Diode

30

10

TC = 25°C

TC = 80°C

TC = 125°C

25

1

0.5

0.3

20

15

10

5

0.1

0.05

0.02

0.01

P_DM

t₁

0.01

t₂

Single Pulse

Duty Factor, D = t1/t2

TJ - TC = PDM*Z^JC(t)

0

0.0

1E-3

1E-5

0.3

0.6

0.9

1.2

1.5

1E-4

1E-3

0.01

0.1

1

Forward Voltage, V_F[V]

Rectangular Pulse Duration, t₁[sec]

Fig 9. Typical Forward Voltage Drop

- Boost Diode

Fig 10. Reverse Recovery Energy vs. Forward Current

- Boost Diode

30

8

Rg = 15 

VR = 300V

TC = 125°C

6

TC = 25°C

TC = 80°C

TC = 125°C

25

20

15

10

5

4

2

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

5

10

15

20

25

30

Forward Voltage, V_F[V]

Forward Current, I_F[V]

Fig 11. Reverse Recovery Energy vs. Gate Resistance Fig 12. Transient Thermal Impedance

- Boost Diode

8

10

IF = 15 A

VR = 300V

TC = 125°C

6

4

2

0

1

0.5

0.3

0.1

0.05

0.02

0.01

P_DM

t₁

0.01

t₂

Single Pulse

Duty Factor, D = t1/t2

TJ - TC = PDM*Z^JC(t)

1E-3

0

20

40

60

80

100

1E-5

1E-4

1E-3

0.01

0.1

1

Gate Resistance, R_G[]

Rectangular Pulse Duration, t₁[sec]

FPF2G120BF07AS Rev. 1.1

6

www.fairchildsemi.com

Internal Circuit Diagram

DC+1

DC+2

DC+3

D1

D2

D3

T1

T2

L1

L2

L3

Q1

Q2

Q3

G1

E1

G2

E2

G3

E3

DC-1

DC-2

DC-3

Package Outlines [mm]

±0.2

1.4

±0.1

4.5

2.3 X 8.5

SIDE VIEW

±0.2

16.4

±0.3

22.7

25.5

24.0

25.5

24.0

±0.15

±0.3

51.0

56.7

20.8

TOP VIEW

17.6

14.4

11.2

8.0

14.4

8.0

4.8

1.6

FRONT VIEW

DC-1

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE DOES NOT COMPLY

TO ANY CURRENT PACKAGING STANDARD

B) ALL DIMENSIONS ARE IN MILLIMETERS

C) 3CH-BOOST MODULE TYPE

4x 2.8

2x 9.0

D) DRAWING FILENAME : 20BF07ASREV3

PCB HOLE POSITION

- PIN-GRID 3.2mm

- TOLERANCE OF PCB HOLE PATTERN

0.1

FPF2G120BF07AS Rev. 1.1

7

www.fairchildsemi.com

FPF2G120BF07AS Rev. 1.1

8

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FPF2G120BF07ASP
厂家：	ONSEMI
描述：	F2, 3ch Boost module with NTC
文件：	总10页 (文件大小：1377K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FPF2G120BF07ASP [ONSEMI]

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