FSBB30CH60C [ONSEMI]

智能电源模块,600V,30A;
FSBB30CH60C
型号: FSBB30CH60C
厂家: ONSEMI    ONSEMI
描述:

智能电源模块,600V,30A

电动机控制 光电二极管 电源电路
文件: 总15页 (文件大小:816K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.cn  
Motion SPM) 3 ꢀ  
FSBB30CH60C  
ꢁꢂ  
FSBB30CH60C ꢂꢃ Motion SPM 3 , ꢃ  
ꢅꢆꢇЗꢉꢅꢊꢋ
٬
 PMSM ꢊꢋꢌŻꢍꢎ͈ꢏꢃ  
ꢐꢑꢒꢓָ
Ϛ
א
{
ר
øӶfͥIGBT  
ꢃꢙꢚꢛ҈ÅӶꢞꢟꢠ
٬
ꢡꢢꢣ
׬
?Żꢥ  
ꢦ ꢄ ꢧ ƽꢨ ꢩ ꢑ, ꢪ ꢫ ꢬ իꢭ ꢮ, ꢯ ꢅ ƽ
٬
ꢰ ꢱ ꢲ 
ت
。  
ͥꢘꢃꢐꢳ HVIC 
׊
ꢴꢵꢀꢅԵꢊꢶꢊի, ꢷꢸꢹꢊꢕꢙ  
ꢚꢔͅӶꢃ
ר
҈ꢂͥIGBT ꢃꢐꢊի, ꢐꢊꢅ  
҈ǁ
ח
ꢽꢾꢃ IGBT ꢿꣀĭधꣃ꣄, 
׏
ꣅ꣆  
꣇ꢡ
׬
꣈꣉ꢃ꣊Ж꣋꣌。  
3D Package Drawing  
(Click to Activate 3D Content)  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
CASE MODFJ  
ꢁ  
꣍ꢯ UL E209204 
ח
꣏꣐ (UL1557)  
600 V 30 A IGBT ָ
, ӥ
؋
ꢙꢚꢛ
҈٬ƽ
ꢨ  
ꢃ꣊Ж IC  
MARKING DIAGRAM  
ꢆĮꢢꢣ꣑꣒꣓꣔ꢃ IGBT  
꣕꣖ DBC (A1N) ꣗꣘꣙ꢍꢎĮꢃ꣚꣛  
ꢆͥꢘ꣜ꢇlꢚ꣝
٬✃
꣖ꢃ Vs ꣞꣟ÅӶՐЗꢊ꣒꣗꣡꣢  
ꢆĮIGBT ꢃꢽꢾֱ꣣ꢚ꣤꣒꣞꣟꣖n⛹ꣂꢊꢅꢆ꣥  
ꢆԵꢊꢶŻꢊ  
FSBB30CH60C  
&Z&K &3  
DL&Z&K&3  
꣧꣨꣩꣪: 2500 Vrms / Ϧ꣫  
&Z  
&K  
&3  
= Assembly Plant Code  
= 2Digits Lot Run Traceability Code  
= 3Digit Date Code  
ꢈ꣬
Ö  
ꢄ  
FSBB30CH60C = Specific Device Code  
҈Ж - ꣮꣖꣯꣰ / ꢊꢋ  
ꢆꢇ  
®
ORDERING INFORMATION  
AN9044 Motion SPM 3 Series Users Guide  
See detailed ordering and shipping information on page 13  
of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
April, 2023 Rev. 2  
FSBB30CH60CCN/D  
FSBB30CH60C  
ꢋ  
nָ
ĮIGBT:  
ꢙꢚꢛ҈ꢊ꣒꣑꣒ƽ(SCP)Жꢊꢶꢬիꢮ꣔  
ƽ(UVLO)  
600 V 30 A IGBT ָ
,ꢻ꣖n⛹DC/AC  
ꣲꢺꣳ(2)  
ꢰꢱǁ
ח
:  
ꢉꢌ
ꢆ、ƽᒄ٬
ꢀꢍᖇЖꢅꢋ  
ꣶꢇ UVLO (Įꣀꢊꢶ)
٬
꣑꣒ꢰꢱ  
ͅ:  
nָ
ꢐꣀ IGBTs:  
ꢙꢚꢛ҈ꢊ꣒իꣷ꣸ꢃꢐꢳꢊꢕꢺꣳ꣊Жꢊ꣒  
իꢮ꣔ƽ(UVLO)  
ꢀ: ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊ 11 ꢋꢊ 12ꢌꢍꢇ。  
ꢐꢊꢕꣃ꣄꣦, 
׏
n 3.3/5 V  
ꢸꢹꢊꢕ, ꣹꣺ꢩꣻֱͅ  
࿣ภ  
 1. Ǐ
 
www.onsemi.cn  
2
 
FSBB30CH60C  
ꢂ  
ח
 
1
׭
 
VCC(L)  
COM  
IN(UL)  
IN(VL)  
IN(WL)  
VFO  
ꢂ  
IC
٬
 IGBT ҈Ŕֿꢁꢂꢃի  
2
ꢁꢂꢀ⁰ᖅऐ  
3
ֿ U LjŔ
ח
ꢅ  
ֿ V LjŔ
ח
ꢅ  
ֿ W LjŔ
ח
ꢅ  
ꢆ  
4
5
6
7
CFOD  
CSC  
ᚎਾᜥᓡঽ៖Ŕꢀ඙  
ʽᢿꢀἡዿἫᩣꢀ඙᫪⃄Ể
)  
ֿ U LjŔ
ח
ꢅ  
IC
٬
 IGBT ҈Ŕֿꢁꢂꢃի  
U Lj IGBT ҈Ŕֿի  
U Lj IGBT ҈Ŕֿիᖅऐ  
ֿ V LjŔ
ח
ꢅ  
IC
٬
 IGBT ҈Ŕֿꢁꢂꢃի  
V Lj IGBT ҈Ŕֿի  
V Lj IGBT ҈Ŕֿիᖅऐ  
ֿ W LjŔ
ח
ꢅ  
IC
٬
 IGBT ҈Ŕֿꢁꢂꢃի  
W Lj IGBT ҈Ŕֿի  
W Lj IGBT ҈Ŕֿիᖅऐ  
U LjŔDŽἡᩣ៯ֿ  
8
9
IN(UH)  
VCC(H)  
VB(U)  
VS(U)  
IN(VH)  
VCC(H)  
VB(V)  
VS(V)  
IN(WH)  
VCC(H)  
VB(W)  
VS(W)  
NU  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
NV  
V LjŔDŽἡᩣ៯ֿ  
NW  
W LjŔDŽἡᩣ៯ֿ  
U
U Ljᩣꢆ  
V
V Ljᩣꢆ  
W
W Ljᩣꢆ  
P
DŽἡᩣᵃֿ  
www.onsemi.cn  
3
FSBB30CH60C  
ͥꢐꢑꢒꢓͅ / Ϛჵꢎ  
P (27)  
W (26)  
(19) V  
B(W)  
V
B
(18) V  
CC(H)  
VCC  
COM  
IN  
OUT  
VS  
(17) IN  
(WH)  
(20) V  
S(W)  
(15) V  
(14) V  
B(V)  
VB  
CC(H)  
VCC  
COM  
IN  
OUT  
VS  
(13) IN  
(VH)  
V (25)  
(16) V  
S(V)  
(11) V  
B(U)  
VB  
(10) V  
CC(H)  
(UH)  
VCC  
COM  
IN  
OUT  
VS  
(9) IN  
(12) V  
U (24)  
S(U)  
(8) C  
SC  
OUT(WL)  
C(SC)  
(7) C  
(6) V  
FOD  
C(FOD)  
VFO  
N
(23)  
(22)  
(21)  
W
FO  
(5) IN  
(WL)  
OUT(VL)  
OUT(UL)  
IN(WL)  
IN(VL)  
IN(UL)  
(4) IN  
(3) IN  
(VL)  
N
V
(UL)  
(2) COM  
(1) V  
COM  
VCC  
CC(L)  
N
U
:  
1. ᫖ָ
Ŕֿꢁꢇꢈ IGBT ֪LjၴŔঽἡ
ٱ
٬
ꢊꢈᖇЖ IC ঔᏰ。͗ᣩ᧥ᥡ
҈٬
ƽᒄѿ்。  
2. ᫖ָ
Ŕѿ╧ֿꢁ᫖ָ
Ŕ
DŽἡꢀ⁰ᩣ
ֿ٬
ꢇꢈֿঔᏰ。  
3. ᫖ָ
ֿꢁꢇꢈ IGBT Å֪LjၴŔঽἡ
ٱ
٬
҈ IC ঔᏰ。  
 2. ͥꢐꢕ
 
www.onsemi.cn  
4
FSBB30CH60C  
ൺȜ (T = 25°C, unless otherwise noted)  
J
ח
 
֢ꢚ  
࿅ļÖ  
ൺȜ  
Եĭ  
ָ
Ϧ  
V
ꢀ⁰ꢀի  
ឝҀई P NU, NV, NW +ꢂ  
ឝҀई P NU, NV, NW +ꢂ  
450  
500  
V
V
PN  
V
ꢀ⁰ꢀի(ὊὬ)  
ὊὬ)  
PN(  
V
ꢀᥡ - ֱ෤ᥡ+ꢀի  
ԵIGBT Ŕꢀᥡꢀἡ  
ԵIGBT Ŕꢀᥡꢀἡ(Ȝ)  
ꢀᥡѿ૧  
600  
V
CES  
I
C
T
T
T
= 25°C, T 150°C  
30  
A
C
C
C
J
I
= 25°C, T 150°C, Βඝႆ෯n1 ms  
60  
A
CP  
J
P
= 25°C, Եൿ␧  
106  
W
°C  
C
T
ļণꢂ  
(4)  
40 ~ 150  
J
ᖇЖϦ  
V
ᖇЖꢀ⁰ꢀի  
ឝҀई V  
ឝҀई V  
), V COM +ꢂ  
CC(L)  
20  
20  
V
V
CC  
CC(H  
V
ֿᖇЖի  
V , V  
S(U) B(V)  
V  
,
BS  
B(U)  
V  
S(V)  
V
B(W)  
S(W)  
V
IN  
ꢅꢄ
ח
ꢀի  
ឝҀई I  
N(VL) N(WL)  
, I  
, I  
, I  
,
0.3 ~ V + 0.3  
V
N(UH) N(VH) N(WH) N(UL)  
CC  
I
,I  
COM +ꢂ  
V
ꢀ⁰ꢀի  
ꢀἡ  
ឝҀई V COM +ꢂ  
0.3 ~ V + 0.3  
V
mA  
V
FO  
FO  
CC  
I
V
FO  
ჵ௪૤Ŕ∬ꢀἡ  
5
FO  
V
SC  
ꢀἡዿἫᩣꢀի  
ឝҀई C COM +ꢂ  
0.3 ~ V + 0.3  
SC  
CC  
ꢇlꢞꢟꢐϦ  
V
ᣠଇ૭֭
ױ
ꢀի  
ױ
ꢀἡ  
600  
0.5  
2.0  
V
A
A
RRM  
I
F
T
T
= 25°C, T 150°C  
J
C
I
ױ
ꢀἡ(Ȝ)  
= 25°C, T 150°C,  
J
Βඝႆ෯n1 ms  
FP  
C
T
J
ļণꢂ  
40 ~ 150  
°C  
ꢀꢍ  
V
಺Ᏹƽᒄꢀ⁰ꢀիЖ  
(ʽᢿƽᒄ்ѻ)  
V
J
= V = 13.5 ~ 16.5 V  
600  
V
PN(PROT)  
CC  
BS  
T = 150°C, ∮Ო૭ሇ, < 2 ms  
T
ᰁष૓ijļꢂႆ  
ʈꢂႆ  
40°C T 150°C,
 1  
40 ~ 125  
40 ~ 125  
2500  
°C  
°C  
C
J
T
STG  
V
ISO  
ভ২ꢀի  
60 HzᵃᄆỂᅂ„1 ϦὯ,᪮ᖅ⛗৚  
ᥟАჵ௪  
V
rms  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
(֢ꢃᚡᝧ)  
ୢ᥼ꢀիᡕ᪗ᣠଇȜϷŔȜ
Ö
׏
úᔿयୢ᥼ᡕ᪗Ûĵ{Ȝ෦ៀẵƽ
Öѿ்
׏
úොೄ
Öᔿय
ڭ
 
׏
。  
4. Motion SPM 3 ‡
ڡ
ᏰŔѿ╧ൿ␧ŔᣠଇণꢂȜꢍ 150°C (T 125°C)。  
C
ꢡꢢ  
ח
 
֢ꢚ  
ণ⊙ ijŔ⋍ℋ  
࿅ļÖ  
෯Ȝ  
͘५Ȝ  
ଇȜ  
1.17  
Եĭ  
°C/W  
°C/W  
R
᫖ָ
 IGBT ᮸Ϧꢀ(1 / 6 ᰁष)  
᫖ָ
 FWD ᮸Ϧꢀ(1 / 6 ᰁष)  
th(jc)Q  
R
1.87  
th(jc)F  
5. ͓nijꢂႆ(T ) ŔἫ֢ᒑ
 1。  
C
www.onsemi.cn  
5
 
FSBB30CH60C  
ꢒꢣꢃ(T = 25°C, ℴ∮
׆
ᣩᛄ៮)  
J
ח
 
֢ꢚ  
࿅ļÖ  
෯Ȝ ͘५Ȝ ଇȜ  
Եĭ  
ָ
Ϧ  
V
ꢀᥡ ֱ෤ᥡꢂ⑁
٬ꢀի  
FWD
ױ
ꢀի  
V
V
= V = 15 V  
I = 20 A,  
C
J
2.0  
2.1  
V
V
CE(SAT)  
CC  
IN  
BS  
= 5 V  
T = 25°C  
V
F
V
IN  
= 0 V  
I = 20 A,  
F
T = 25°C  
J
HS  
t
͓ꢂ  
V
C
V
= 300 V, V = V = 15 V  
0.75  
0.2  
0.4  
0.1  
0.1  
0.55  
0.35  
0.4  
0.1  
0.1  
1
ms  
ms  
ms  
ms  
ms  
ms  
ms  
ms  
ms  
ms  
mA  
ON  
PN  
IN  
CC  
BS  
I
= 30 A  
t
C(ON)  
= 0 V 5 V, ꢀዿ៯ᩍ  
(6)  
t
OFF  
t
C(OFF)  
t
rr  
LS  
t
V
C
= 300 V, V = V = 15 V  
CC BS  
ON  
PN  
I
= 30 A  
t
C(ON)  
V
IN  
= 0 V 5 V, ꢀዿ៯ᩍ  
(6)  
t
OFF  
t
C(OFF)  
t
rr  
I
ꢀᥡ ֱ෤ᥡ⃯ꢀἡ  
V
V
= V  
CES  
CES  
CE  
ᖇЖϦ  
I
V
CC  
ᇡꢀ⁰ꢀἡ  
= 15 V  
(UL, VL, WL)  
V
COM  
23  
mA  
mA  
mA  
QCCL  
CC  
IN  
CC(L)  
= 0 V  
= 0 V  
= 0 V  
I
V
= 15 V  
(UH, VH, WH)  
V
CC(H)  
COM  
600  
500  
QCCH  
CC  
IN  
,
,
I
V
BS  
ᇡꢀ⁰ꢀἡ  
V
= 15 V  
(UH, VH, WH)  
V
B(U)  
V
B(V)  
V
B(W)  
V
S(U)  
QBS  
BS  
IN  
V
)
S(V  
V
S(W)  
V
ꢀի  
V
= 0 V, V ꢀᢿ: 4.7 kW to 5 V  
4.5  
V
V
FOH  
SC  
ᒩ  
FO  
V
V
SC  
ᒩ  
= 1 V, V ꢀᢿ: 4.7 kW to 5 V  
0.8  
FOL  
FO  
V
ʽᢿꢀἡᒶֱꢀၓ  
᪗ꢂƽᒄ  
V
= 15 V (7)  
0.45  
0.5  
160  
5
0.55  
V
°C  
°C  
V
SC(ref)  
CC  
TSD  
LVIC Ŕꢂႆ  
LVIC Ŕꢂႆ  
᪠Ἣꢀၓ  
DTSD  
᪗ꢂ ƽᒄ᪯₾  
ꢀ⁰ꢀᢿᴀիƽᒄ  
UV  
UV  
UV  
UV  
10.7  
11.2  
10  
11.9  
12.4  
11  
13.0  
13.4  
12  
CCD  
CCR  
BSD  
BSR  
ĭꢀၓ  
V
᪠Ἣꢀၓ  
V
ĭꢀၓ  
10.5  
1.0  
2.8  
11.5  
1.8  
12.5  
V
t
௙ඝ  
ො᫪Ȝꢀի  
͓Ȝꢀի  
C
= 33 nF (8)  
FOD  
ms  
V
FOD  
V
ឝҀई IN  
IN  
, IN  
, IN , IN ,  
(WH) (UL)  
IN(ON)  
(UH)  
(WL)  
(VH)  
, IN  
COM +ꢂ  
(VL)  
V
0.8  
V
IN(OFF)  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
(֢ꢃᚡᝧ)  
ℴ∮
׆
ᣩᛄ៮ꢀᷴ⑙ሇጸ᨜ϷŔ᠏ᐠϷἫᚥ᥁Ö⛻Ŕ‡
ڡ
ሇ்֢ᝐୢ᥼ई
׬
Ö⛻ꢄጜ‡
ڡ
ሇ்
׏
⛾“ꢀᷴ⑙ሇጸ᨜  
ᐠϷሇ்֢ᝐ⛽ꢊ。  
6. t  
٬
t  
ᛇ֢ᒑ
 3。  
ӥᓌᰁषͥ᮸ꢀ҈IC ŔĀᩣზ᪯៖。ꢋt  
٬
t ᓧईͥ঩ൺŔ᧥ᥡ҈᥁Ö⛻IGBT ᤌ᥻Ŕრ͓ᚶখ  
C(OFF)  
ON  
OFF  
C(ON)  
7. ʽᢿꢀἡƽ¥ļnꢀֿ。  
8. ௙ඝ t  
6  
ֶΓnꢀ඙ C  
ŔȜ
׏
Ŕ᪡Ĝꢁ
ჯ᪫ጜᙱ٧
: C  
= 18.3 x 10 x t  
[F]  
FOD  
FOD  
FOD  
FOD  
www.onsemi.cn  
6
 
FSBB30CH60C  
100% I  
100% I  
C
C
t
rr  
V
V
I
C
I
C
CE  
CE  
V
IN  
V
IN  
t
t
OFF  
ON  
t
t
C(OFF)  
C(ON)  
V
10% V  
V
IN(OFF)  
10% I 90% I  
IN(ON)  
10% V  
10% I  
C
CE  
C
C
CE  
(b) turnoff  
(a) turnon  
 3. რꢃꢤꢥꢉൺ)  
Switching Loss(ON) vs. Collector Current  
Switching Loss(OFF) vs. Collector Current  
2200  
2000  
1800  
900  
800  
700  
600  
V
V
V
= 300 V  
V
= 300 V  
= 15 V  
= 5 V  
CE  
CE  
= 15 V  
V
V
CC  
CC  
= 5 V  
IN  
IN  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
T = 25°C  
T = 25°C  
J
J
T = 150°C  
J
T = 150°C  
J
500  
400  
300  
200  
100  
0
0
3
6
9
12 15 18 21 24 27 30  
33  
0
3
6
9
12 15 18 21 24 27 30  
33  
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
 4. რꢃᔿꢦꢃ͘५Ȝ)  
www.onsemi.cn  
7
FSBB30CH60C  
ꢇlꢞꢟꢐϦ  
ח
 
֢ꢚ  
࿅ļÖ  
෯Ȝ  
͘५Ȝ  
2.5  
ଇȜ  
Եĭ  
V
V
F
ױ
ꢀի  
I = 0.1 A, T = 25°C  
F
C
t
rr  
֭
ױ
ቂ૭៖ꢂ  
I = 0.1 A, T = 25°C  
80  
ns  
F
C
Built in Bootstrap Diode V I Characteristic  
F
F
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
= 25°C  
C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15  
V (V)  
F
:  
9. ͥਾ಺ꢎꢉ
ٱ
͖ᑷ⑙ሇॶ15 W。  
 5. ͥꢧꢝꢇlꢞꢟꢃꢁ  
࿅ļÖ  
ח
 
֢ꢚ  
࿅ļÖ  
ឝҀई P N , N , N  
෯Ȝ  
͘५Ȝ  
300  
15  
ଇȜ  
400  
Եĭ  
V
V
V
ꢀ⁰ꢀի  
PN  
U
V
W
ᖇЖꢀ⁰ꢀի  
ֿի  
ឝҀई V  
ឝҀई V  
, V  
COM  
13.5  
13.0  
16.5  
V
CC  
CC(H) CC(L)  
V
BS  
V  
, V  
V ,  
S(V)  
15  
18.5  
V
B(U)  
S(U) B(V)  
V
V  
B(W)  
S(W)  
dV /dt,  
ᖇЖꢀ⁰Ể҈  
1  
1
V/ms  
CC  
dV /dt  
BS  
t
ᵂᩅಒDŽ᫪ŔᵛԚ៖ꢂ  
PWM ꢅꢄ
ח
 
ꢅꢄ
ח
 
40°C T 125°C, 40°C T 150°C  
2
20  
4
ms  
kHz  
V
dead  
f
PWM  
C
J
V
ꢀἡዿἫ‡⛿Ŕꢀի  
ឝҀई N , N , N COM +⃄  
4  
SEN  
U
V
W
(ӥᓌὊὬꢁի)  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
(֢ꢃᚡᝧ)  
nᖈภ࿅ļ
ጸ᨜ᐠϷꢀի៖⛽ƽᚑ்૿ᵃဘꢄጜईᖈภ࿅ļ
ጸ᨜ᒔൺී
Å૶Ŕꢀիꢄጜ
׏
ú
ࡈڭ
ÖŔ  
׏
。  
www.onsemi.cn  
8
FSBB30CH60C  
ꢩꢪꢃ
ꢁ٬
ൺȜ  
֢ꢚ  
࿅ļÖ  
෯Ȝ  
͘५Ȝ  
0.62  
ଇȜ  
0.80  
+120  
Եĭ  
Nm  
mm  
g
൩᎕ᑍʹ  
൩᎕ኊ: M3  
ლᙾ 0.62 Nm  
 6  
0.51  
0
Öႆ  
ᲝᲟ  
15.00  
( + )  
( + )  
 6. ၓꢬꢭĭꢧ  
www.onsemi.cn  
9
 
FSBB30CH60C  
ƽᒄꢅꢋꢤ
 
Input Signal  
RESET  
SET  
RESET  
a1  
Protection  
Circuit State  
UV  
CCR  
a6  
UV  
Control  
Supply Voltage  
CCD  
a3  
a4  
a2  
a7  
Output Current  
a5  
Fault Output Signal  
a1: ᖇЖꢀ⁰ꢀիԧ: ᄳꢀիԧА UV  
׮
ؙА⛻ꢊꢈრ᫪
ח
ෙၴŔꢀᢿᐭრ஫҈ļ。  
CCR  
a2: ᵃဘ࿅ļ: IGBT ො᫪ၖҀᩍ៯ᩍꢀἡ。  
a3: ᴀի᪠Ἣ (UV )。  
CCD  
a4: ᚊᖇЖᩣŔ᥁ÖIGBT ͓。  
a5: ļ؏҈。  
a6: ᴀի૭ĭ (UV  
)。  
CCR  
a7: ᵃဘ࿅ļ: IGBT ො᫪ၖҀᩍ៯ᩍꢀἡ。  
 7. իƽᒄꢉ(Į)  
Input Signal  
RESET  
b1  
SET  
RESET  
Protection  
Circuit State  
UV  
BSR  
b5  
Control  
Supply Voltage  
b3  
b4  
UV  
BSD  
b6  
b2  
Output Current  
Highlevel (no fault output)  
Fault Output Signal  
b1: ᖇЖꢀ⁰ꢀիԧ: ᄳꢀիԧА UV  
׮
ؙА⛻ꢊꢈꢅꢄ
ח
ෙၴŔꢀᢿᐭრ஫҈ļ。  
BSR  
b2: ᵃဘ࿅ļ: IGBT ො᫪ၖҀᩍ៯ᩍꢀἡ。  
b3: ᴀի᪠Ἣ (UV )。  
BSD  
b4: ᚊᖇЖᩣŔ᥁ÖIGBT ͓₽,ៀᜥꢆꢄ
ח
。  
b5: ᴀի૭ĭ (UV )。  
BSR  
b6: ᵃဘ࿅ļ: IGBT ො᫪ၖҀᩍ៯ᩍꢀἡ。  
 8. իƽᒄꢉ(ꢰꢯ)  
www.onsemi.cn  
10  
FSBB30CH60C  
Lower arms  
control input  
c6  
c7  
Protection  
circuit state  
RESET  
SET  
Internal IGBT  
GateEmitter Voltage  
c4  
c3  
c2  
SC  
c1  
c8  
Output Current  
SC Reference  
Voltage  
Sensing Voltage  
of the shunt  
resistance  
CR circuit time  
constant delay  
c5  
Fault Output Signal  
(ӥ
؋
Ϧἡꢀ
٬
 CR ᪮ᖅ)  
c1: ᵃဘ࿅ļ: IGBT ො᫪ၖҀᩍ៯ᩍꢀἡ。  
c2: ʽᢿꢀἡዿἫ(SC ᒶֱ) 。  
c3: IGBT ᧥ᥡ̼。  
c4: IGBT ͓。  
c5: ზ៖࿅ļ؏҈: ꢆꢄ
ח
Ŕ௙ඝ᫪᪗૶ꢀ඙ CFO ᚎਾ。  
c6: “LOW”: IGBT ͓ឍ⒖ᇡ。  
c7: “HIGH”: IGBT ො᫪Ħ᠏ईᜥᣩᜨŔ៖ͥIGBT ො᫪。  
c8: IGBT ͓ឍ⒖ᇡ。  
 9. ꢱꢓꢒꢲƽᒄꢉ(¥ꢳꢄꢯꢉ࿅ļ)  
www.onsemi.cn  
11  
FSBB30CH60C  
5 V Line  
SPM  
R
= 4.7 kW  
PF  
100 W  
IN  
IN  
, IN  
, IN  
(UH)  
(VH)  
(WH)  
(WL)  
100 W  
100 W  
, IN  
, IN  
MCU  
(UL)  
(VL)  
V
FO  
1 nF  
1 nF  
1 nF  
C
= 1 nF  
PF  
COM  
:  
10. ֿŔRC
׏ר
Ȑၴ✈ӛၯꢌş✈ŔPWM
ᖇЖយᨨ٬ၴ✈ӛၯՐЗꢀᢿᥟᖅএᑷ
૜᜙ָMotion SPM 3ꢋ‡
ڡ
Ŕ  
ꢅꢄ
ח
ϦȜꢍꢋ5 kŔᒩꢀ
ş✈૶Ŕ⃄ỂꢀᛇỈዯᚵ
ח
ईᩣֿŔի。  
11. ᬋᩡᩣꢅ⛾Φ CMOS ᏶૕ LSTTL Ŕᩣꢆ͜。  
 10. ᖈꢨꢉ MCU I/O ꢊꢋꢒꢓ  
These Values depend on PWM Control Algorithm  
OneLeg Diagram of  
Motion SPM 3 Product  
P
Vcc VB  
IN  
HO  
0.1uF  
15 V  
22 mF  
COM VS  
Inverter  
Output  
Vcc  
1 mF  
1000 mF  
IN OUT  
COM  
V
BL  
N
:  
12. V COM +Ŕ⛗ꢀ඙ၴଇn 1 mFၴฝ
׏
Motion SPM 3 ‡
ڡ
Ŕჵ௪。  
CC  
 11. ᖈꢨꢉꢝꢇ࿅ļꢒꢓ
٬֢
ꢚ  
www.onsemi.cn  
12  
 
FSBB30CH60C  
5V line 15V line  
P (27)  
W (26)  
(19) VB(W)  
VB  
(18) VCC(H)  
VCC  
OUT  
VS  
RS  
RS  
RS  
COM  
IN  
CBS  
CBSC  
CBSC  
CBSC  
(17) IN(WH)  
(20) VS(W)  
Gating WH  
Gating VH  
Gating UH  
CPS  
(15) VB(V)  
VB  
(14) VCC(H)  
VCC  
OUT  
VS  
COM  
IN  
(13) IN(VH)  
(16) VS(V)  
CBS  
V (25)  
M
CPS  
(11) VB(U)  
VB  
M
C
U
(10) VCC(H)  
VCC  
CDCS  
Vdc  
OUT  
VS  
COM  
IN  
CBS  
(9) IN(UH)  
(12) VS(U)  
U (24)  
CPS  
RF  
RPF  
(8) CSC  
(7) CFOD  
(6) VFO  
CSC  
OUT(WL)  
OUT(VL)  
C(SC)  
C(FOD)  
VFO  
RSW  
NW (23)  
NV (22)  
NU (21)  
RS  
RS  
CFOD  
Fault  
(5) IN(WL)  
(4) IN(VL)  
(3) IN(UL)  
Gating WL  
Gating VL  
Gating UL  
IN(WL)  
IN(VL)  
IN(UL)  
RS  
RS  
RSV  
(2) COM  
(1) VCC(L)  
COM  
VCC  
CPF  
CBPF  
CPS  
CPS CPS  
OUT(UL)  
VSL  
RSU  
CSPC15  
CSP15  
RFW  
RFV  
RFU  
Input Signal for  
ShortCircuit Protection  
WPhase Current  
VPhase Current  
UPhase Current  
CFW  
CFU  
CFV  
:  
13. ꢍf̭ꢁ,ၴฝ
׏
்৹ʽᶯֿŔ᪮এn 23 cm。  
14. 
ꢍꢋMotion SPM 3ꢋ‡
ڡ
ͥ᮸↖fꢊꢈ͗ᣩ⑙ᵪѿ்ŔHVIC
׃
ꢀᢿ⛾ꢋꢋMCUֿ
׃
ŔDŽᖅꢅ
ר
׏
ጜŔÛĵ̩
ࡈר
 
᏶ָի
ҋ。  
15.  
V
ꢀᥡრᢿ५
ח
এၴᄳ4.7 kW ᒩೃ 5 V ꢀ⁰Ŕᵃᥡᛇ֢ꢃ
 10。  
FO  
16. ᖈภ C  
17.  
ŔֶȜၴଇnꢀ඙ C  
Ŕ 7 ǭ
ד
。  
BS  
SP15  
V
FO  
௙ඝֶΓn᪮ᖅईC  
ჵ௪7
٬
COMჵ௪2+Ŕ૶ꢀ඙C  
ЊūC  
= 33 nF,  
FOD  
FOD  
FOD  
Ϲt = 1.8 ms͘Ȝ))͗ij
ᙱ٧យẵᛇ֢ꢃᛄ៮
 5。  
FO  
18. ꢅꢄ
ח
ꢀၓᣩᜨIC ꢊꢈꢋ5 kŔꢀ෦ᶯꢊꢈꢅꢄ
ח
ᒩᖅऐၴᄳRC
ר
ꢀᢿÅ̭ꢅꢄ
ח
ᔏ  
RSCPS ဘᝐၴᚵ᫙ᓉई 50 ~ 150 ns
ͥ。CPS ꢀn 1 nF ᖈภ RS = 100 W, CPS = 1 nF。  
19. ꢍ̭ƽᒄѿ்ꢃ,ၴฝ
׏
்৹ʽ RF
٬
 CSC 
ࣔو
Ŕ᪮এ。  
20. ईʽᢿƽᒄꢀᢿR C  
Ŕ៖ဘᝐၴई 1.5 ~ 2.0 ms Ŕී
ͥ᪫ጜ᫙ᓉ。  
F
SC  
21. ꢀ඙ၴฝ
׏
்ऐMotion SPM 3 ‡
ڡ
Ŕჵ௪൩᎕。  
22. ꢍᵂὊὬŔ̄यၴฝ
׏
்৹ʽ⃄Ểꢀ඙٬
 P & GND ჵ௪Ŕ᪮এᖈภई P & GND ჵ௪ş0.1 ~ 0.22 mF  
Ŕ▨ꢄៀዿꢀ඙。  
23.
פ
ҝඖ✈ꢀ
ᚎꢆπꢏ✈Аfষꢀ
ई᪩{Ε⛻MCU
٬ষꢀ
+ၴ)ᣩ૿Ŕҋ。  
24.  
C
ၴଇn 1 mFၖฝ
׏
Motion SPM 3 ‡
ڡ
Ŕჵ௪൩᎕。  
SPC15  
 12. ͘५ꢂꢄꢒꢓ  
ꢴꢵꢶ⛾ൺꢍꢎ  
Ö  
ꢴ  
Shipping  
FSBB30CH60C  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
(PbFree)  
60 Units / Tube  
SPM is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or  
other countries.  
www.onsemi.cn  
13  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
CASE MODFJ  
ISSUE O  
DATE 31 JAN 2017  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13563G  
SPMCA027 / PDD STD, SPM27CA, DBC TYPE  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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