FSBB30CH60C [ONSEMI]
智能电源模块,600V,30A;型号: | FSBB30CH60C |
厂家: | ONSEMI |
描述: | 智能电源模块,600V,30A 电动机控制 光电二极管 电源电路 |
文件: | 总15页 (文件大小:816K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Motion SPM) 3 ꢀꢀ
FSBB30CH60C
ꢁꢂ
FSBB30CH60C ꢀꢀꢁꢁꢂꢃ Motion SPM 3 ꢄꢂ, ꢃ
ꢄꢅꢆꢇ、ꢈЗꢉꢅꢊꢋ
٬
PMSM ꢊꢋꢌŻꢍꢎ͈ꢏꢃ ꢐꢑꢒꢓָ
ࡈ
ꢔϚꢕא
。ꢖ{ꢄꢂꢗר
øӶfͥꢘ IGBT ꢃꢙꢚꢛ҈ÅꢜꢝӶꢊꢞꢟꢠ
٬
ꢒꢡꢢꢣ。
ꢤ?ꢌŻꢥ ꢦ ꢄ ꢧ ƽꢨ ꢩ ꢑ, ꢪ ꢫ ꢬ իꢭ ꢮ, ꢯ ꢅ ƽꢨ
٬
ꢰ ꢱ ꢲ ت
。 ͥꢘꢃꢐꢳ HVIC
ꢴꢵꢀꢅԵꢊꢶꢊի, ꢷꢸꢹꢊꢕꢙ ꢚꢔͅꢺӶꢃꢻ
ר
ꢛ҈ꢄꢂͥꢼ IGBT ꢃꢐꢊի, ꢐꢊꢅ ꢛ҈ǁ
ח
。ꢽꢾꢃ IGBT ꢿꣀईꣁꢅꣂĭधꣃ꣄,
ꣅ ꢡ⛽
ꢃЖ。 3D Package Drawing
(Click to Activate 3D Content)
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
CASE MODFJ
ꢃꢁ
•ꢆꢯ UL ꣎ E209204
ח
꣏꣐ (UL1557) •ꢆ600 V − 30 A ⛹ꣂ IGBT ꢓָ
ࡈ
, ӥ؋
ꢙꢚꢛ҈٬ƽ
ꢨ ꢃЖ IC
MARKING DIAGRAM
•ꢆĮꢢꢣ、꣑꣒꣓꣔ꢃ IGBT
•ꢆ꣕꣖ DBC (A1N) ꣗꣘꣙ꢍꢎĮꢃ
•ꢆͥꢘꢇlꢚ
٬✃
꣖ꢃ Vs Å꣠ӶՐЗꢊ꣒꣗꣡꣢ •ꢆĮꣀ IGBT ꢃꢽꢾֱ꣣ꢚ꣤꣒꣖n⛹ꣂꢊꢅꢆ꣥
•ꢆԵ꣦ऐꢊꢶŻꢊ
FSBB30CH60C
&Z&K &3
DL&Z&K&3
•ꢆ꣧꣨꣩꣪: 2500 Vrms / Ϧ꣫
&Z
&K
&3
= Assembly Plant Code
= 2−Digits Lot Run Traceability Code
= 3−Digit Date Code
• ꢈ꣬
ࡈ
Ö ꢂꢄ
FSBB30CH60C = Specific Device Code
•ꢆ꣭҈Ж - ꣮꣖꣯꣰ / ꣱ꢈꢊꢋ
ꢅꢃꢆꢇ
®
ORDERING INFORMATION
• AN−9044 Motion SPM 3 Series Users Guide
See detailed ordering and shipping information on page 13
of this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
April, 2023 − Rev. 2
FSBB30CH60CCN/D
FSBB30CH60C
ꢈꢄꢉꢅꢊꢅꢋ
• ꣶnꢓָ
ࡈ
Įꣀ IGBT: ꢙꢚꢛ҈ꢊ꣒、꣑꣒ƽꢨ(SCP)、Жꢊꢶꢬիꢮ꣔
ƽꢨ(UVLO)
• 600 V − 30 A IGBT ꢓָ
ࡈ
,ꢻ꣖n⛹ꣂ DC/AC ꢉꣲꢺꣳꢊ(ꣴꢋꣵꢌ2)
• ꢰꢱǁ
ח
: ꢈꢄꢉꢌ
ꢆ、ƽᒄ٬
ꢀꢍᖇЖꢅꢋ ꣶꢇ UVLO (Įꣀꢊꢶ)
٬
꣑꣒ꢰꢱ • ꢔ꣦ͅꢍ:
• ꣶnꢓָ
ࡈ
ꢐꣀ IGBTs: ꢙꢚꢛ҈ꢊ꣒、ꢐիꣷ꣸ꢃꢐꢳꢊꢕꢺꣳЖꢊ꣒
ꢬիꢮ꣔ƽꢨꢊ(UVLO)
ꢀ: ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊ 11 ꢋꢊ 12ꢌꢍꢇ。
ꢐꢊꢕꣃ꣄꣦ꢍ,
꣖n 3.3/5 V ꢸꢹꢊꢕ, ꣹꣺ꢩꣻֱ꣼ꢎꢔͅ
ჵꢎภ
ࣞ
1. Ǐꢏࣞ
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2
FSBB30CH60C
ჵꢎᖯꢂ
ჵꢎ
ח
1
ჵꢎ
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
ჵꢎᖯꢂ
IC
٬
IGBT ꢀ҈Ŕꢀֿꢁꢂꢃի 2
ꢁꢂꢀ⁰ᖅऐ
3
ꢀֿ U LjŔꢄ
ח
ᩣꢅ ꢀֿ V LjŔꢄ
ח
ᩣꢅ ꢀֿ W LjŔꢄ
ח
ᩣꢅ ᜥꢁᩣꢆ
4
5
6
7
CFOD
CSC
ᚎਾᜥꢁᩣꢆᓡঽ៖ꢂŔꢀ
ʽᢿꢀἡዿἫᩣꢅꢀ(ꢀỂ
ࡈ
) ▨ֿ U LjŔꢄ
ח
ᩣꢅ IC
٬
IGBT ꢀ҈Ŕ▨ֿꢁꢂꢃի U Lj IGBT ꢀ҈Ŕ▨ֿꢃի
U Lj IGBT ꢀ҈Ŕ▨ֿꢃիᖅऐ
▨ֿ V LjŔꢄ
ח
ᩣꢅ IC
٬
IGBT ꢀ҈Ŕ▨ֿꢁꢂꢃի V Lj IGBT ꢀ҈Ŕ▨ֿꢃի
V Lj IGBT ꢀ҈Ŕ▨ֿꢃիᖅऐ
▨ֿ W LjŔꢄ
ח
ᩣꢅ IC
٬
IGBT ꢀ҈Ŕ▨ֿꢁꢂꢃի W Lj IGBT ꢀ҈Ŕ▨ֿꢃի
W Lj IGBT ꢀ҈Ŕ▨ֿꢃիᖅऐ
U LjŔDŽἡᩣꢅֿ
8
9
IN(UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
NV
V LjŔDŽἡᩣꢅֿ
NW
W LjŔDŽἡᩣꢅֿ
U
U Ljᩣꢆ
V
V Ljᩣꢆ
W
W Ljᩣꢆ
P
DŽἡᩣꢅᵃֿ
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3
FSBB30CH60C
ͥꢐꢑᜨꢒꢓ⛾ꢔͅ / ꢔϚჵꢎ
P (27)
W (26)
(19) V
B(W)
V
B
(18) V
CC(H)
VCC
COM
IN
OUT
VS
(17) IN
(WH)
(20) V
S(W)
(15) V
(14) V
B(V)
VB
CC(H)
VCC
COM
IN
OUT
VS
(13) IN
(VH)
V (25)
(16) V
S(V)
(11) V
B(U)
VB
(10) V
CC(H)
(UH)
VCC
COM
IN
OUT
VS
(9) IN
(12) V
U (24)
S(U)
(8) C
SC
OUT(WL)
C(SC)
(7) C
(6) V
FOD
C(FOD)
VFO
N
(23)
(22)
(21)
W
FO
(5) IN
(WL)
OUT(VL)
OUT(UL)
IN(WL)
IN(VL)
IN(UL)
(4) IN
(3) IN
(VL)
N
V
(UL)
(2) COM
(1) V
COM
VCC
CC(L)
N
U
Ỉ:
1. ָ
ࡈ
Ŕꢀֿꢁꢇꢈ IGBT ֪LjၴŔঽἡꢉᥡٱ
٬
ꢊꢈᖇЖ IC ঔᏰ。͗ᣩ᧥ᥡꢀ҈٬
ƽᒄѿ்。 2. ָ
ࡈ
Ŕѿ╧ֿꢁָࡈ
Ŕࢻ
ꢈDŽἡꢀ⁰ᩣꢅֿ٬
ꢇꢈᩣꢆֿঔᏰ。 3. ָ
ࡈ
▨ֿꢁꢇꢈ IGBT Å֪LjၴŔঽἡꢉᥡٱ
٬
ꢀ҈ IC ঔᏰ。 ࣞ
2. ͥꢐꢕࣞ
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4
FSBB30CH60C
ꢖෙꢗଇꢘൺȜ (T = 25°C, unless otherwise noted)
J
ꢙ
ח
֢ꢚ
࿅ļꢛÖ
ꢘൺȜ
Եĭ
ꢜָ
ࡈ
ꢐϦ V
ꢀ⁰ꢀի
ឝҀई P − NU, NV, NW +ꢂ
ឝҀई P − NU, NV, NW +ꢂ
450
500
V
V
PN
V
ꢀ⁰ꢀիꢋ(ὊὬ)
ὊὬ)
PN(
V
↖ꢀᥡ - ֱᥡ+ꢂꢀի
Եꢈ IGBT Ŕ↖ꢀᥡꢀἡ
Եꢈ IGBT Ŕ↖ꢀᥡꢀἡꢋ(໐Ȝ)
↖ꢀᥡѿ૧
600
V
CES
I
C
T
T
T
= 25°C, T ≤ 150°C
30
A
C
C
C
J
I
= 25°C, T ≤ 150°C, Βඝႆ෯n1 ms
60
A
CP
J
P
= 25°C, Եꢈൿ
106
W
°C
C
T
࿅ļণꢂ
(Ỉ 4)
−40 ~ 150
J
ᖇЖꢐϦ
V
ᖇЖꢀ⁰ꢀի
ឝҀई V
ឝҀई V
), V − COM +ꢂ
CC(L)
20
20
V
V
CC
CC(H
V
▨ֿᖇЖꢃի
− V , V
S(U) B(V)
− V
,
BS
B(U)
− V
S(V)
V
B(W)
S(W)
V
IN
ᩣꢅꢄ
ח
ꢀի ឝҀई I
N(VL) N(WL)
, I
, I
, I
,
−0.3 ~ V + 0.3
V
N(UH) N(VH) N(WH) N(UL)
CC
I
,I
− COM +ꢂ
V
ᜥꢁᩣꢆꢀ⁰ꢀի
ᜥꢁᩣꢆꢀἡ
ឝҀई V − COM +ꢂ
−0.3 ~ V + 0.3
V
mA
V
FO
FO
CC
I
V
FO
ჵ௪Ŕ∬ꢀἡ
5
FO
V
SC
ꢀἡዿἫᩣꢅꢀի
ឝҀई C − COM +ꢂ
−0.3 ~ V + 0.3
SC
CC
ꢝꢇlꢞꢟꢐϦ
V
ᣠଇᲝ૭֭
ױ
ꢀի ᵃ
ױ
ꢀἡ 600
0.5
2.0
V
A
A
RRM
I
F
T
T
= 25°C, T ≤ 150°C
J
C
I
ᵃ
ױ
ꢀἡꢋ(໐Ȝ) = 25°C, T ≤ 150°C,
J
Βඝႆ෯n1 ms
FP
C
T
J
࿅ļণꢂ
−40 ~ 150
°C
ꢠꢈꢀꢍ
V
Ᏹƽᒄꢀ⁰ꢀի℠Ж
(ʽᢿƽᒄ்ѻ)
V
J
= V = 13.5 ~ 16.5 V
600
V
PN(PROT)
CC
BS
T = 150°C, ∮Ო૭ሇ, < 2 ms
T
ᰁषij࿅ļꢂႆ
സʈꢂႆ
−40°C ≤ T ≤ 150°C, ᒑ
ࣞ
1 −40 ~ 125
−40 ~ 125
2500
°C
°C
C
J
T
STG
V
ISO
ভ২ꢀի
60 Hz,ᵃᄆỂᅂ,ἡꢋ1 ϦὯ,ᖅⅆ⛗
ᥟАჵ௪
V
rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(֢ꢃᚡᝧ)
ୢꢀիᡕ᪗ᣠଇ⍭ൺȜጸꢌϷꢆŔȜී
ࣔ
,ࡈ
Ö
்úᔿय。ୢᡕ᪗Ûĵ᪩{℠Ȝ,෦ៀẵƽᚑࡈ
Öѿ்,
்úොೄࡈ
Öᔿय,ᅑڭ
∰ሇ。 4. Motion SPM 3
ڡ
ꢌ↖ᏰŔѿ╧ൿŔᣠଇণꢂ⍭ൺȜꢍ 150°C (ᄳ T ≤ 125°C)。 C
ꢡꢢ
ꢙ
ח
֢ꢚ
ণ⊙ − ijŔ⋍ℋ
࿅ļꢛÖ
ꢗ෯Ȝ
͘५Ȝ
ꢗଇȜ
1.17
Եĭ
°C/W
°C/W
R
ָ
ࡈ
IGBT ᮸Ϧꢀ(ᶯ 1 / 6 ᰁष) ָ
ࡈ
FWD ᮸Ϧꢀ(ᶯ 1 / 6 ᰁष) −
−
−
−
th(j−c)Q
R
1.87
th(j−c)F
5. ͓nijꢂႆꢋ(T ) ŔἫᲟ⊙,֢ᒑ
ࣞ
1。 C
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5
FSBB30CH60C
ꢒꢣꢃꢁ(T = 25°C, ℴ∮
׆
ᣩᛄ。) J
ꢙ
ח
֢ꢚ
࿅ļꢛÖ
ꢗ෯Ȝ ͘५Ȝ ꢗଇȜ
Եĭ
ꢜָ
ࡈ
ꢐϦ V
↖ꢀᥡ − ֱᥡꢂ⑁
٬ꢀի
FWD ᵃ
ױ
ꢀի V
V
= V = 15 V
I = 20 A,
C
J
−
−
−
−
2.0
2.1
V
V
CE(SAT)
CC
IN
BS
= 5 V
T = 25°C
V
F
V
IN
= 0 V
I = 20 A,
F
T = 25°C
J
HS
t
რ͓៖ꢂ
V
C
V
= 300 V, V = V = 15 V
−
−
−
−
−
−
−
−
−
−
−
0.75
0.2
0.4
0.1
0.1
0.55
0.35
0.4
0.1
0.1
−
−
−
−
−
−
−
−
−
−
−
1
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
mA
ON
PN
IN
CC
BS
I
= 30 A
t
C(ON)
= 0 V ↔ 5 V, ꢀዿᩍ
(Ỉ 6)
t
OFF
t
C(OFF)
t
rr
LS
t
V
C
= 300 V, V = V = 15 V
CC BS
ON
PN
I
= 30 A
t
C(ON)
V
IN
= 0 V ↔ 5 V, ꢀዿᩍ
(Ỉ 6)
t
OFF
t
C(OFF)
t
rr
I
↖ꢀᥡ − ֱᥡꢂ⃯ꢀἡ
V
V
= V
CES
CES
CE
ᖇЖꢐϦ
I
V
CC
∩ᇡꢀ⁰ꢀἡ
= 15 V
(UL, VL, WL)
V
− COM
−
−
−
−
−
−
23
mA
mA
mA
QCCL
CC
IN
CC(L)
= 0 V
= 0 V
= 0 V
I
V
= 15 V
(UH, VH, WH)
V
CC(H)
− COM
600
500
QCCH
CC
IN
−
−
,
,
I
V
BS
∩ᇡꢀ⁰ꢀἡ
V
= 15 V
(UH, VH, WH)
V
B(U)
V
B(V)
V
B(W)
V
S(U)
QBS
BS
IN
V
)
S(V
−
V
S(W)
V
ᜥꢁᩣꢆꢀի
V
= 0 V, V ꢀᢿ: 4.7 kW to 5 V
4.5
−
−
−
V
V
FOH
SC
⛺ᒩ
FO
V
V
SC
⛺ᒩ
= 1 V, V ꢀᢿ: 4.7 kW to 5 V
−
0.8
FOL
FO
V
ʽᢿꢀἡᒶֱꢀၓ
᪗ꢂƽᒄ
V
= 15 V (Ỉ 7)
0.45
−
0.5
160
5
0.55
−
V
°C
°C
V
SC(ref)
CC
TSD
LVIC Ŕꢂႆ
LVIC Ŕꢂႆ
᪠Ἣꢀၓ
DTSD
᪗ꢂ ƽᒄ₾
ꢀ⁰ꢀᢿᴀիƽᒄ
−
−
UV
UV
UV
UV
10.7
11.2
10
11.9
12.4
11
13.0
13.4
12
CCD
CCR
BSD
BSR
૭ĭꢀၓ
V
᪠Ἣꢀၓ
V
૭ĭꢀၓ
10.5
1.0
2.8
−
11.5
1.8
−
12.5
−
V
t
ᜥꢁᩣꢆඝ
ො⃘Ȝꢀի
͓ឍ⃘Ȝꢀի
C
= 33 nF (Ỉ 8)
FOD
ms
V
FOD
V
ឝҀई IN
IN
, IN
, IN , IN ,
(WH) (UL)
−
IN(ON)
(UH)
(WL)
(VH)
, IN
− COM +ꢂ
(VL)
V
−
0.8
V
IN(OFF)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(֢ꢃᚡᝧ)
ℴ∮
׆
ᣩᛄ,“ꢀᷴሇ”ጸꢌϷꢆŔ᠏ᐠϷἫᚥÖ⛻Ŕڡ
ሇ்֢ᝐ。ୢई⛽
Ö⛻ꢄጜ,ڡ
ሇ்
்⛾“ꢀᷴሇ”ጸ ꢌᐠϷሇ்֢ᝐ⛽ꢊೄ。
6. t
٬
ꢋt ꢄ,ᛇ֢ᒑ
ࣞ
3。 ӥᓌᰁषͥ᮸ꢀ҈ꢋIC ŔĀᩣზ៖ꢂ。ꢋt
٬
ꢋt ᓧईͥ᮸ൺŔ᧥ᥡꢀ҈Ö⛻,ꢋIGBT ᤌŔრ͓៖ꢂ。ᚶখ C(OFF)
ON
OFF
C(ON)
7. ʽᢿꢀἡƽᒄ¥ļ✈nꢀֿ。
8. ᜥꢁᩣꢆඝ t
−6
ֶΓnꢀ C
ŔȜ,
Თ✈⛻∲Ŕ᪡Ĝꢁჯ᪫ጜᙱ٧
: C = 18.3 x 10 x t
[F]
FOD
FOD
FOD
FOD
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6
FSBB30CH60C
100% I
100% I
C
C
t
rr
V
V
I
C
I
C
CE
CE
V
IN
V
IN
t
t
OFF
ON
t
t
C(OFF)
C(ON)
V
10% V
V
IN(OFF)
10% I 90% I
IN(ON)
10% V
10% I
C
CE
C
C
CE
(b) turn−off
(a) turn−on
ࣞ
3. რꢃꢤꢥꢉൺ) Switching Loss(ON) vs. Collector Current
Switching Loss(OFF) vs. Collector Current
2200
2000
1800
900
800
700
600
V
V
V
= 300 V
V
= 300 V
= 15 V
= 5 V
CE
CE
= 15 V
V
V
CC
CC
= 5 V
IN
IN
1600
1400
1200
1000
800
600
400
200
0
T = 25°C
T = 25°C
J
J
T = 150°C
J
T = 150°C
J
500
400
300
200
100
0
0
3
6
9
12 15 18 21 24 27 30
33
0
3
6
9
12 15 18 21 24 27 30
33
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
ࣞ
4. რꢃᔿꢦꢃꢁ(͘५Ȝ) www.onsemi.cn
7
FSBB30CH60C
ꢝꢇlꢞꢟꢐϦ
ꢙ
ח
֢ꢚ
࿅ļꢛÖ
ꢗ෯Ȝ
͘५Ȝ
2.5
ꢗଇȜ
Եĭ
V
V
F
ᵃ
ױ
ꢀի I = 0.1 A, T = 25°C
−
−
−
−
F
C
t
rr
֭
ױ
ቂ૭៖ꢂ I = 0.1 A, T = 25°C
80
ns
F
C
Built in Bootstrap Diode V −I Characteristic
F
F
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 25°C
C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
V (V)
F
Ỉ:
9. ͥਾꢎꢉᥡ
ٱ
͖ℋᑷሇॶꢍ 15 W。 ࣞ
5. ͥꢧꢝꢇlꢞꢟꢃꢁ ᖈꢨ࿅ļꢛÖ
ꢙ
ח
֢ꢚ
࿅ļꢛÖ
ឝҀई P − N , N , N
ꢗ෯Ȝ
−
͘५Ȝ
300
15
ꢗଇȜ
400
Եĭ
V
V
V
ꢀ⁰ꢀի
PN
U
V
W
ᖇЖꢀ⁰ꢀի
▨ֿꢃի
ឝҀई V
ឝҀई V
, V
− COM
13.5
13.0
16.5
V
CC
CC(H) CC(L)
V
BS
− V
, V
− V ,
S(V)
15
18.5
V
B(U)
S(U) B(V)
V
− V
B(W)
S(W)
dV /dt,
ᖇЖꢀ⁰Ể҈
−1
−
1
V/ms
CC
dV /dt
BS
t
ℂᵂᩅಒDŽŔᵛԚ៖ꢂ
PWM ᩣꢅꢄ
ח
ᶯꢈᩣꢅꢄ
ח
−40°C ≤ T ≤ 125°C, −40°C ≤ T ≤ 150°C
2
−
−
−
−
−
20
4
ms
kHz
V
dead
f
PWM
C
J
V
ꢀἡዿἫ⛿Ŕꢀի
ឝҀई N , N , N − COM +
−4
SEN
U
V
W
(ӥᓌὊὬꢁի)
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
(֢ꢃᚡᝧ)
▨nᖈภ࿅ļී
ࣔ
ጸꢌᐠϷꢀի៖,⛽ƽᚑ்૿ᵃဘꢄጜ。⁏៖ꢂईᖈภ࿅ļීࣔ
ጸꢌᒔൺීࣔ
ÅŔꢀի⛻ꢄጜ,
்úᅑࡈڭ
ÖŔ
∰ሇ。 www.onsemi.cn
8
FSBB30CH60C
ꢩꢪꢃ
ꢁ٬
ꢘൺȜ ֢ꢚ
࿅ļꢛÖ
ꢗ෯Ȝ
͘५Ȝ
0.62
−
ꢗଇȜ
0.80
+120
−
Եĭ
N•m
mm
g
൩᎕ᑍʹ
൩᎕ኊὙ: M3
ლᙾ 0.62 N•m
ᒑ
ࣞ
6 0.51
0
ࡈ
Öၓ∲ႆ ᲝᲟ
−
15.00
( + )
( + )
ࣞ
6. ၓꢫႆꢬꢭĭꢧ www.onsemi.cn
9
FSBB30CH60C
ƽᒄꢅꢋꢤၯ
ࣞ
Input Signal
RESET
SET
RESET
a1
Protection
Circuit State
UV
CCR
a6
UV
Control
Supply Voltage
CCD
a3
a4
a2
a7
Output Current
a5
Fault Output Signal
a1: ᖇЖꢀ⁰ꢀի⛺ԧ: ᄳꢀի⛺ԧА UV
,ؙА⛻ꢊꢈრꢄח
៖,ෙၴŔꢀᢿᐭრ҈ļ。 CCR
a2: ᵃဘ࿅ļ: IGBT ොၖҀᩍᩍꢀἡ。
a3: ᴀի᪠Ἣ (UV )。
CCD
a4: ⛽ᚊᖇЖᩣꢅŔÖ, IGBT ᯍ͓ឍ。
a5: ᜥꢁᩣꢆ࿅ļ؏҈。
a6: ᴀի૭ĭ (UV
)。
CCR
a7: ᵃဘ࿅ļ: IGBT ොၖҀᩍᩍꢀἡ。
ࣞ
7. ꢮիƽᒄꢉ(Įꢯ) Input Signal
RESET
b1
SET
RESET
Protection
Circuit State
UV
BSR
b5
Control
Supply Voltage
b3
b4
UV
BSD
b6
b2
Output Current
High−level (no fault output)
Fault Output Signal
b1: ᖇЖꢀ⁰ꢀի⛺ԧ: ᄳꢀի⛺ԧА UV
,ؙА⛻ꢊꢈᩣꢅꢄח
៖,ෙၴŔꢀᢿᐭრ҈ļ。 BSR
b2: ᵃဘ࿅ļ: IGBT ොၖҀᩍᩍꢀἡ。
b3: ᴀի᪠Ἣ (UV )。
BSD
b4: ⛽ᚊᖇЖᩣꢅŔÖ, IGBT ᯍ͓₽,✄ៀᜥꢁᩣꢆꢄ
ח
。 b5: ᴀի૭ĭ (UV )。
BSR
b6: ᵃဘ࿅ļ: IGBT ොၖҀᩍᩍꢀἡ。
ࣞ
8. ꢮիƽᒄꢉ(ꢰꢯ) www.onsemi.cn
10
FSBB30CH60C
Lower arms
control input
c6
c7
Protection
circuit state
RESET
SET
Internal IGBT
Gate−Emitter Voltage
c4
c3
c2
SC
c1
c8
Output Current
SC Reference
Voltage
Sensing Voltage
of the shunt
resistance
CR circuit time
constant delay
c5
Fault Output Signal
(ӥ
؋
᮸Ϧἡꢀℋ٬
CR ᖅ) c1: ᵃဘ࿅ļ: IGBT ොၖҀᩍᩍꢀἡ。
c2: ʽᢿꢀἡዿἫꢋ(SC ᒶֱ) 。
c3: IGBT ᧥ᥡ̼ꢌឍ。
c4: IGBT ͓ឍ。
c5: ᜥꢁᩣꢆზ៖࿅ļ؏҈: ᜥꢁᩣꢆꢄ
ח
Ŕඝ᪗᮸ꢀ CFO ᚎਾ。 c6: ᩣꢅ“LOW”: IGBT ͓ឍ⒖ᇡ。
c7: ᩣꢅ“HIGH”: IGBT ො,Ħ᠏ईᜥꢁᩣꢆᣩᜨŔ៖ꢂͥ,ꢋIGBT ⛽ො。
c8: IGBT ͓ឍ⒖ᇡ。
ࣞ
9. ꢱꢓꢒꢲƽᒄꢉ(¥ꢳꢄnĮꢯꢉ࿅ļ) www.onsemi.cn
11
FSBB30CH60C
5 V − Line
SPM
R
= 4.7 kW
PF
100 W
IN
IN
, IN
, IN
(UH)
(VH)
(WH)
(WL)
100 W
100 W
, IN
, IN
MCU
(UL)
(VL)
V
FO
1 nF
1 nF
1 nF
C
= 1 nF
PF
COM
Ỉ:
10. ᶯꢈᩣꢅֿŔꢋRC ꢅ
ר
்⅟Ȑၴ✈ӛၯꢌş✈ŔꢋPWM ᖇЖយᨨ٬ၴ✈ӛၯՐЗꢀᢿᥟᖅএᑷ
ℋָ。Motion SPM 3ꢋڡ
Ŕ ᩣꢅꢄ
ח
᮸Ϧ↖Ᏸf͘५Ȝꢍꢋ5 kWĂŔ⛻ᒩꢀℋ。ࣀ
ᵄ,ᄳş✈᮸ŔỂꢀℋ៖,ᛇỈዯᚵꢄח
ईᩣꢅֿŔիℝ。 11. ᬋᩡᩣꢅ⛾᧧Φ CMOS LSTTL Ŕᩣꢆ͜。
ࣞ
10. ᖈꢨꢉ MCU I/O ꢊꢋꢒꢓ These Values depend on PWM Control Algorithm
One−Leg Diagram of
Motion SPM 3 Product
P
Vcc VB
IN
HO
0.1uF
15 V
22 mF
COM VS
Inverter
Output
Vcc
1 mF
1000 mF
IN OUT
COM
V
BL
N
Ỉ:
12. ई V − COM +ꢂŔⅆ⛗ꢀၴଇn 1 mF,ၖ✄ၴฝ
்∰᪡ Motion SPM 3 ڡ
Ŕჵ௪。 CC
ࣞ
11. ᖈꢨꢉꢝꢇ࿅ļꢒꢓ٬֢
ꢚ www.onsemi.cn
12
FSBB30CH60C
5V line 15V line
P (27)
W (26)
(19) VB(W)
VB
(18) VCC(H)
VCC
OUT
VS
RS
RS
RS
COM
IN
CBS
CBSC
CBSC
CBSC
(17) IN(WH)
(20) VS(W)
Gating WH
Gating VH
Gating UH
CPS
(15) VB(V)
VB
(14) VCC(H)
VCC
OUT
VS
COM
IN
(13) IN(VH)
(16) VS(V)
CBS
V (25)
M
CPS
(11) VB(U)
VB
M
C
U
(10) VCC(H)
VCC
CDCS
Vdc
OUT
VS
COM
IN
CBS
(9) IN(UH)
(12) VS(U)
U (24)
CPS
RF
RPF
(8) CSC
(7) CFOD
(6) VFO
CSC
OUT(WL)
OUT(VL)
C(SC)
C(FOD)
VFO
RSW
NW (23)
NV (22)
NU (21)
RS
RS
CFOD
Fault
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
Gating WL
Gating VL
Gating UL
IN(WL)
IN(VL)
IN(UL)
RS
RS
RSV
(2) COM
(1) VCC(L)
COM
VCC
CPF
CBPF
CPS
CPS CPS
OUT(UL)
VSL
RSU
CSPC15
CSP15
RFW
RFV
RFU
Input Signal for
Short−Circuit Protection
W−Phase Current
V−Phase Current
U−Phase Current
CFW
CFU
CFV
Ỉ:
13. ꢍf̭ᜥꢁ,ၴฝ
்৹ʽᶯꢈᩣꢅֿŔএ(෯n 2−3 cm)。 14.
ࣀ
ꢍꢋMotion SPM 3ꢋڡ
ͥ᮸↖Ᏸfꢊꢈ͗ᣩᵪѿ்ŔꢋHVIC,ᖅ׃
ꢀᢿ⛾ꢋꢋMCUֿ׃
ŔDŽᖅꢅר
᠏
ጜŔ,⛽⇐ᑑÛĵ̩ꢅࡈר
ָի
ࡈ
Ⅴҋ。 15.
V
ᩣꢆ᠏↖ꢀᥡრᢿ५。ᚵꢄ
ח
এၴᄳᲗ✈ 4.7 kW ꢀℋ⛺ᒩೃ 5 V ꢀ⁰Ŕᵃᥡ。(ᛇ֢ꢃࣞ
10)。 FO
16. ᖈภ C
17.
ŔֶȜၴଇnꢎꢀ C
Ŕ 7 ǭ࿆
ד
。 BS
SP15
V
FO
ᩣꢆඝֶΓnᖅईꢋC
(ჵ௪ꢋ7)
٬
ꢋCOM(ჵ௪ꢋ2)+ꢂŔ᮸ꢀ(C )。(Њū:ඵꢋC
= 33 nF,
FOD
FOD
FOD
Ϲꢋt = 1.8 ms(͘५Ȝ))͗ij
ᙱ٧យẵᛇ֢ꢃᛄ
5。 FO
18. ᩣꢅꢄ
ח
ꢍ▨ꢀၓᣩᜨ。ईꢋIC ꢌ,ᣩꢊꢈꢋ5 kWĂŔꢀℋ෦ᶯꢊꢈᩣꢅꢄח
এ⛻ᒩᖅऐ。ၴᄳᲗ✈ꢋRC ꢅר
ꢀᢿ,Å̭ᩣꢅꢄח
ᔏ ั。RSCPS ៖ꢂဘᝐၴᚵᓉई 50 ~ 150 ns ී
ࣔ
ͥ。CPS ⛽ၴꢀn 1 nF (ᖈภ RS = 100 W, CPS = 1 nF)。 19. ꢍ̭ƽᒄѿ்ꢆꢃ,ၴฝ
்৹ʽ RF ٬
CSC ࣔو
Ŕএ。 20. ईʽᢿƽᒄꢀᢿꢌ, R C
Ŕ៖ꢂဘᝐၴई 1.5 ~ 2.0 ms Ŕී
ࣔ
ͥ᪫ጜᓉ。 F
SC
21. ᶯꢈꢀᯍၴฝ
்ऐ∰᪡ Motion SPM 3 ڡ
Ŕჵ௪൩᎕。 22. ꢍℂᵂὊὬŔ̄य,ၴฝ
்৹ʽỂꢀ٬
P & GND ჵ௪ꢂŔএ。ᖈภई P & GND ჵ௪ꢂş✈ 0.1 ~ 0.22 mF Ŕ▨ꢄៀዿꢀ。
23. ई
פ
ҝඖ✈ꢀࡈ
ᚎꢆꢌ,πꢏᯍ✈Аfষꢀࡈ
。ई᪩{እΕ⛻, MCU ٬ষꢀ
ࡈ
+ꢂၴ)ᣩᢃ૿Ŕҋ。 24.
C
ၴଇn 1 mF,ၖฝ
்∰᪡ Motion SPM 3 ڡ
Ŕჵ௪൩᎕。 SPC15
ࣞ
12. ͘५ꢂꢄꢒꢓ ꢌꢴꢵꢶ⛾ൺꢷꢍꢎ
ࡈ
Ö ꢌꢴ
Shipping
FSBB30CH60C
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
(Pb−Free)
60 Units / Tube
SPM is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
www.onsemi.cn
13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
CASE MODFJ
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13563G
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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