HGTG30N60A4D [ONSEMI]
600V，SMPS IGBT;
| 型号： | HGTG30N60A4D |
| 厂家： | 
ONSEMI |
| 描述： | 600V，SMPS IGBT 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG30N60A4D
www.onsemi.com
The HGTG30N60A4D is a MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49343. The diode
used in anti−parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
C
G
E
E
C
G
Formerly Developmental Type TA49345.
COLLECTOR
(FLANGE)
Features
• >100 kHz Operation 390 V, 30 A
• 200 kHz Operation 390 V, 18 A
• 600 V Switching SOA Capability
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
• Typical Fall Time 60 ns at T = 125°C
J
MARKING DIAGRAM
• Low Conduction Loss
• Temperature Compensating Saber™ Model
• This is a Pb−Free Device
$Y&Z&3&K
30N60A4D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
30N60A4D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2020 − Rev. 2
HGTG30N60A4D/D
HGTG30N60A4D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Parameter
Collector to Emitter Voltage
Symbol
BV
HGTG30N60A4D
Unit
600
V
CES
Collector Current Continuous
At T = 25°C
I
70
60
A
A
C
C25
At T = 110°C
I
C
C110
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
240
A
V
V
CM
V
GES
GEM
20
30
V
Switching Safe Operating Area at T = 150°C, (Figure 2)
SSOA
150 A at 600 V
463
J
Power Dissipation Total at T = 25°C
P
D
W
W/°C
°C
C
Power Dissipation Derating T > 25°C
3.7
C
Operating and Storage Junction Temperature Range
Maximum Temperature for Soldering
T , T
−55 to 150
260
J
STG
T
L
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
I = 250 mA, V = 0 V
C
Min
600
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
CE
= 600 V
T = 25°C
−
250
2.8
2.6
2.0
7.0
250
−
mA
mA
V
CES
J
T = 125°C
−
−
J
Collector to Emitter Saturation Voltage
V
I
C
= 30 A, V = 15 V
T = 25°C
−
1.8
1.6
5.2
−
CE(SAT)
GE
J
T = 125°C
−
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
C
= 250 mA, V = V
GE
4.5
−
V
GE(TH)
CE
I
V
GE
=
20 V
nA
A
GES
SSOA
T = 150°C, R = 3 W, V = 15 V,
150
−
J
G
CE
GE
L = 100 mH, V = 600 V
Gate to Emitter Plateau Voltage
V
I
I
= 30 A, V = 300 V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
8.5
225
300
25
−
270
360
−
V
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
V
GEP
C
C
CE
On−State Gate Charge
Q
= 30 A, V = 300 V
V
V
= 15 V
= 20 V
g(ON)
CE
GE
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 30 A,
CE
t
rI
12
−
V
V
R
= 390 V,
= 15 V,
= 3 W,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
150
38
−
d(OFF)I
t
fI
−
L = 200 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
Current Turn−On Delay Time
Current Rise Time
E
E
E
280
600
240
24
−
ON1
ON2
OFF
−
350
−
t
IGBT and Diode at T = 125°C,
J
d(ON)I
I
= 30 A,
CE
t
rI
11
−
V
V
R
= 390 V,
= 15 V,
= 3 W,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
180
58
200
70
−
d(OFF)I
t
fI
L = 200 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
E
E
280
1000
450
2.2
40
ON1
ON2
OFF
1200
750
2.5
55
42
V
I
I
I
= 30 A
EC
EC
EC
EC
t
rr
ns
ns
= 30 A, dI /dt = 200 A/ms
EC
= 1 A, dI /dt = 200 A/ms
30
EC
www.onsemi.com
2
HGTG30N60A4D
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Symbol
Test Condition
Min
−
Typ
−
Max
0.27
0.65
Unit
°C/W
°C/W
Thermal Resistance Junction To Case
R
IGBT
q
JC
Diode
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 24.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
60
200
150
100
50
V
= 15 V
T
J
= 150°C, R = 3 W, V = 15 V, L = 500 mH
GE
G
GE
70
60
50
40
30
20
10
0
0
0
100
200
300
400
500
600
700
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
500
300
18
16
14
12
10
8
900
800
700
600
500
400
300
200
T
V
GE
C
V
CE
= 390 V, R = 3 W, T = 125°C
G
J
75°C 15 V
ISC
f
f
P
= 0.05 / (t
+ t
)
MAX1
MAX2
d(OFF)I
d(ON)I
+ E
100
= (P − P ) / (E
)
D
C
ON2
OFF
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.27°C/W, SEE NOTES
C
t SC
R
ØJC
6
TJ = 125°C, RG = 3 W, L = 200 mH, VCE = 390 V
10 30
4
30
10
11
12
13
14
15
3
60
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
www.onsemi.com
3
HGTG30N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
50
40
50
DUTY CYCLE < 0.5%, V = 12 V
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, V = 15 V
GE
PULSE DURATION = 250 ms
GE
40
30
20
10
0
30
20
10
0
T
J
= 125°C
J
T
T
= 125°C
= 150°C
J
T = 25°C
J
T
J
= 25°C
T
= 150°C
J
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
3500
1400
R
G
= 3 W, L = 200 mH, V = 390 V
R = 3 W, L = 200 mH, V = 390 V
G CE
CE
3000
2500
2000
1500
1000
500
1200
1000
800
600
400
200
0
T
= 125°C, V = 12 V, V = 15 V
GE GE
J
T
J
= 125°C, V = 12 V or 15 V
GE
T
J
= 25°C, V = 12 V, V = 15 V
GE
GE
T = 25°C, V = 12 V or 15 V
J GE
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON ENERGY LOSS vs.
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
34
32
30
28
26
24
22
20
100
80
60
40
20
0
R
= 3 W, L = 200 mH, V = 390 V
CE
G
R
= 3 W, L = 200 mH, V = 390 V
CE
G
T
J
= 25°C, T = 125°C, V = 12 V
J GE
T
J
= 125°C, V = 15 V, V = 12 V
GE GE
T
J
= 25°C, V = 12 V
GE
T
J
= 25°C, T = 125°C, V = 15 V
J GE
T
J
= 25°C, V = 15 V
GE
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
www.onsemi.com
4
HGTG30N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
70
220
200
180
160
140
120
R
G
= 3 W, L = 200 mH, V = 390 V
CE
R
= 3 W, L = 200 mH, V = 390 V
CE
G
60
50
40
30
20
V
= 12 V, V = 15 V, T = 125°C
GE J
GE
T
J
= 125°C, V = 12 V or 15 V
GE
T
J
= 25°C, V = 12 V or 15 V
GE
V
GE
= 12 V, V = 15 V, T = 25°C
GE J
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
15.0
12.5
10.0
7.5
5.0
2.5
0
350
300
250
200
150
100
50
DUTY CYCLE < 0.5%, V = 10 V
CE
PULSE DURATION = 250 ms
I
= 1 mA, R = 15 W, T = 25°C
G(REF)
L
J
T
J
= 25°C
V
= 600 V
CE
V
CE
= 400 V
V
CE
= 200 V
T
J
= 125°C
T = −55°C
J
0
6
7
8
9
10
11
12
0
50
100
150
200
250
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 13. TRANSFER CHARACTERISTIC
Figure 14. GATE CHARGE WAVEFORMS
5
20
16
12
8
T
E
= 125°C L = 200 mH, V = 390 V, V = 15 V
CE GE
J
R
= 3 W, L = 200 mH, V = 390 V, V = 15 V
CE GE
G
= E + E
ON2 OFF
TOTAL
E
TOTAL
= E + E
ON2 OFF
4
3
2
1
0
I
= 60 A
CE
I
= 30 A
CE
I
= 60 A
= 30 A
CE
4
I
= 15 A
CE
I
CE
I
= 15 A
CE
0
3
10
100
300
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
R , GATE RESISTANCE (W)
G
Figure 15. TOTAL SWITCHING LOSS vs.
CASE TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs.
GATE RESISTANCE
www.onsemi.com
5
HGTG30N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
2.3
10
8
DUTY CYCLE < 0.5%, V = 15 V
GE
FREQUENCY = 1 MHz
PULSE DURATION = 250 ms, T = 25°C
J
2.2
2.1
2.0
1.9
1.8
1.7
6
C
I
I
= 60 A
IES
CE
4
= 30 A
= 15 A
CE
2
COES
CRES
I
CE
0
9
10
11
12
13
14
15
16
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
100
35
dI /dt = 200 A/ms
EC
DUTY CYCLE < 0.5%
125°C t
90
80
70
60
50
rr
PULSE DURATION = 250 ms
30
25
25°C
125°C
20
15
10
5
125°C t
a
25°C t
rr
40
30
20
10
0
125°C t
b
25°C t
25°C t
a
b
0
0
5
10
15
20
25
30
0
0.5
1.0
1.5
2.0
2.5
V
EC
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 20. RECOVERY TIMES vs.
FORWARD CURRENT
1400
1200
60
50
40
30
20
10
0
I
= 30 A, V = 390 V
V
CE
= 390 V
125°C I = 30 A
EC
CE
CE
125°C t
a
b
1000
800
125°C I = 15 A
CE
125°C t
25°C t
25°C t
a
600
400
25°C I = 30 A
CE
b
200
0
25°C I = 15 A
CE
200
300
400
500
600
700
800
900 1000
200
300
400
500 600
700
800
900 1000
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
Figure 21. RECOVERY TIMES vs. RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs. RATE OF
CHANGE OF CURRENT
www.onsemi.com
6
HGTG30N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
10−1
10−2
0.50
0.20
0.10
t
1
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P x Z
x R ) + T
q
JC C
q
J
D
JC
SINGLE PULSE
10−4
10−5
10−3
10−2
10−1
100
101
t , RECTANGULAR PULSE DURATION (s)
1
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
HGTP30N60A4D
DIODE TA49373
90%
10%
ON2
V
GE
E
E
OFF
L = 200 mH
V
CE
R
G
= 3 W
90%
DUT
10%
d(OFF)I
+
I
CE
t
V
DD
= 390 V
t
rI
t
fI
−
t
d(ON)I
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 25. SWITCHING TEST WAVEFORMS
www.onsemi.com
7
HGTG30N60A4D
HANDLING PRECAUTIONS FOR IGBTs
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Insulated Gate Bipolar Transistors are susceptible to gate−
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
f
is defined by f
= 0.05 / (t
+ t
).
MAX1
MAX1
d(OFF)I
d(ON)I
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
T
. t
is important when controlling output ripple
JM d(OFF)I
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
under a lightly loaded condition.
is defined by f = (P − P ) / (E
f
+ E
).
ON2
MAX2
MAX2
D
C
OFF
The allowable dissipation (P ) is defined by P = (T − T )
D
D
JM
C
5. Gate Voltage Rating − Never exceed the
/ R . The sum of device switching and conduction losses
qJC
gate−voltage rating of V . Exceeding the rated
GEM
must not exceed P . A 50% duty factor was used (Figure 3)
D
V
GE
can result in permanent damage to the oxide
and the conduction losses (P ) are approximated by
C
layer in the gate region.
P = (V x I ) / 2.
C
E
CE
CE
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
and E
are defined in the switching waveforms
ON2
OFF
shown in Figure 25. E
is the integral of the instantaneous
ON2
power loss (I x V ) during turn−on and E is the
CE
CE
OFF
integral of the instantaneous power loss (I x V ) during
CE
CE
turn−off. All tail losses are included in the calculation for
capacitor due to leakage currents or pickup.
E
; i.e., the collector current equals zero (I = 0).
OFF
CE
ORDERING INFORMATION
†
Part Number
HGTG30N60A4D
Package
Brand
Shipping
TO−247
30N60A4D
450 Units / Tube
NOTE: When ordering, use the entire part number.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
HGTG30N60A4D_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
HGTG30N60B3D_NL
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明