HGTG30N60B3 [ONSEMI]
IGBT，600V，PT;
| 型号： | HGTG30N60B3 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，PT 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - NPT
600 V
HGTG30N60B3
Description
The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. The IGBT is ideal for many high voltage
switching applications operating at moderate frequencies where low
conduction losses are essential, such as: UPS, solar inverter and power
supplies.
www.onsemi.com
V
I
C
CES
1200 V
30 A
Features
C
• 30 A, 600 V, T = 110°C
C
• Low Saturation Voltage: V
= 1.45 V @ I = 30 A
C
CE(SAT)
• Typical Fall Time . . . . . . . . . . . . . 90 ns at T = 150°C
J
• Short Circuit Rating
• Low Conduction Loss
• This Device is Pb−Free
G
E
E
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
G30N60B3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G30N60B3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2020 − Rev. 3
HGTG30N60B3/D
HGTG30N60B3
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Description
Ratings
Unit
V
BV
I
Collector to Emitter Voltage
Collector Current Continuous
600
CES
C
T
T
= 25°C
60
A
C
= 110°C
30
A
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
220
A
CM
V
GES
GEM
20
V
V
30
V
SSOA
Switching Safe Operating Area at T = 150°C (Figure 2)
60 A at 600 V
J
P
Power Dissipation Total
T
= 25°C
> 25°C
208
W
W/°C
mJ
°C
D
C
C
Power Dissipation Derating
Reverse Voltage Avalanche Energy
T
1.67
E
ARV
100
T
T
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
−55 to +150
J, STG
T
260
4
°C
L
T
SC
Short Circuit Withstand Time (Note 2)
Short Circuit Withstand Time (Note 2)
V
V
= 12 V
= 10 V
ꢀ
s
GE
GE
10
ꢀ
s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. V
= 360 V, T = 125°C, R = 3 ꢁ
CE(PK)
J G
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Shipping
HGTG30N60B3
G30N60B3
TO−247
Tube
450/Tube
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 250 ꢀ A, V = 0 V
Min.
600
20
Typ.
−
Max.
Unit
V
BV
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
I
−
−
CES
ECS
C
GE
BV
= −10 mA, V = 0 V
−
V
C
GE
ꢀ A
mA
V
I
Collector to Emitter Leakage Current
V
V
I
= BV
= BV
, T = 25°C
−
−
−
−
−
250
3.0
1.9
CES
CE
GE
CES
C
, T = 150°C
C
CES
Collector to Emitter Saturation Voltage
= I
C110
, V = 15 V,
1.45
V
C
GE
CE(SAT)
T
= 25°C
C
I
= I
C
, V = 15 V,
−
1.7
2.1
V
C
C110
GE
T
= 150°C
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
I
= 250 ꢀ A, V = V
GE
4.2
−
5.0
6.0
250
−
V
nA
A
GE(th)
C
CE
I
V
=
20 V
−
GES
GE
T = 150°C, R = 3 ꢁ ꢂ
V
V
SSOA
Switching SOA
200
J
G
= 15 V, L = 100 ꢀ H,
CE(PK)
GE
= 480 V
T = 150°C, R = 3 ꢁ ꢂ
60
−
A
J
G
V
= 15 V, L = 100 ꢀ H,
GE
V
= 600 V
CE(PK)
V
Gate to Emitter Plateau Voltage
I
I
= I
, V = 0.5 BV
−
−
7.2
−
V
GEP
C
C110
CE
CES
= I
GE
, V = 0.5 BV
,
,
Q
On−State Gate Charge
170
190
nC
C
V
C110
CE
CES
G(ON)
= 15 V
I
C
= I
GE
, V = 0.5 BV
CE CES
−
230
250
nC
C110
V
= 20 V
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2
HGTG30N60B3
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IGBT and Diode at T = 25°C
T
Current Turn−On Delay Time
Current Rise Time
J
−
−
−
−
−
−
−
36
25
−
−
−
−
ns
ns
ns
ns
ꢀ J
ꢀ J
ꢀ J
d(on)I
I
= I
C110
CE
T
rI
V
V
= 0.8 BV
= 15 V
CE
GE
G
CES
T
Current Turn−Off Delay Time
Current Fall Time
137
58
d(off)I
R
= 3 ꢁ
L = 1 mH
Test Circuit (Figure 17)
T
fI
E
Turn−On Energy (Note 4)
Turn−On Energy (Note 4)
Turn−Off Energy (Note 3)
500
550
680
on1
on2
E
800
900
E
off
IGBT and Diode at T = 150°C
T
Current Turn−On Delay Time
Current Rise Time
J
−
−
−
−
−
−
−
−
32
24
−
−
ns
ns
d(on)l
I
= I
C110
CE
T
rl
V
V
= 0.8 BV
= 15 V
CE
GE
G
CES
T
d(off)I
Current Turn−Off Delay Time
Current Fall Time
275
90
320
150
−
ns
R
= 3 ꢁ
L = 1 mH
Test Circuit (Figure 17)
T
fl
ns
E
Turn−On Energy (Note 4)
Turn−On Energy (Note 4)
Turn−Off Energy (Note 3)
Thermal Resistance Junction To Case
500
1300
1600
−
ꢀ J
on1
on2
E
1550
1900
0.6
ꢀ
J
E
ꢀ
J
off
R
°C/W
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
4. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 17.
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3
HGTG30N60B3
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
225
o
V
= 15V
T
= 150 C, R = 3 W, V = 15V, L =100 mH
G GE
GE
J
200
175
150
125
100
75
50
25
0
0
100
200
500
600
300
400
700
25
50
75
100
125
150
T
C,
Case Temperature (5C)
V
CE,
Collector to Emitter Voltage (V)
Figure 1. DC Collector Current
vs. Case Temperature
Figure 2. Minimum Switching Safe
Operating Area
o
20
18
16
14
12
10
500
450
400
350
300
250
T
= 150 C, R = 3 W, L = 1mH,
J
G
o
V
= 360V, R = 3 W, T = 125 C
100
10
CE
G
J
V
= 480V
CE
I
SC
T
V
C
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
GE
15V
75 C 10V
MAX1
d(ON)I
+ E )
OFF
1
o
75 C
= (P − P ) / (E
MAX2
D
C
ON2
o
t
SC
= CONDUCTION DISSIPATION
C
o
o
15V
110 C
(DUTY FACTOR = 50%)
8
6
200
150
110 C 10V
o
R
= 0.6 C/W, SEE NOTES
jJC
0.1
5
10
20
40
60
10
11
12
13
14
15
I
, Collector to Emitter Current (A)
V
GE,
Gate to Emitter Voltage (V)
CE
Figure 3. Operating Frequency
vs. Collector to Emitter Current
Figure 4. Short Circuit Withstand Time
225
200
175
150
125
100
75
350
DUTY CYCLE <0.5%, V = 10V
GE
DUTY CYCLE <0.5%, V
GE
PULSE DURATION = 250 ms
= 15 V
PULSE DURATION = 250 ms
300
250
200
150
100
50
o
= 150 C
o
T
T
= −55 C
C
C
o
T
= −55 C
C
o
= 150 C
T
o
C
T
= 25 C
C
o
T
= 25 C
50
C
25
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
V
CE,
Collector to Emitter Voltage (V)
V
CE,
Collector to Emitter Voltage (V)
Figure 5. Collector to Emitter
Figure 6. Collector to Emitter
On−State Voltage
On−State Voltage
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4
HGTG30N60B3
TYPICAL PERFORMANCE CURVES (Continued)
6
5
4
3
2
1
0
4.5
R
= 3 W, L = 1mH, V = 480V
CE
R
= 3 W, L = 1mH, V = 480V
CE
G
G
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
o
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
o
T
= 150 C, V
GE
= 10V OR 15V
J
o
T
= 25 C, V = 10V OR 15V
GE
J
o
= 25 C, T = 150 C, V = 15V
GE
o
T
J
J
10
20
30
40
50
60
10
20
30
40
50
60
I , Collector to Emitter Current (A)
CE
I
, Collector to Emitter Current (A)
CE
Figure 8. Turn−off Energy Loss vs.
Figure 7. Turn−on Energy Loss vs.
Collector to Emitter Current
Collector to Emitter Current
55
50
45
40
35
30
25
250
R
= 3 W, L = 1mH, V = 480V
CE
R
= 3 W, L = 1mH, V = 480V
G
G
CE
o
o
T
= 25 C, T = 150 C, V
GE
= 10V
J
J
200
150
100
o
o
T
= 25 C, T = 150 C, V
= 15V
GE
J
J
o
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
50
0
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
50
10
20
30
40
50
60
10
20
30
40
60
I
Collector to Emitter Current (A)
CE,
I
Collector to Emitter Current (A)
CE,
Figure 9. Turn−on Delay Time vs.
Figure 10. Turn−on Rise Time vs.
Collector to Emitter Current
Collector to Emitter Current
300
250
200
150
100
120
100
80
R
= 3 W, L = 1mH,
= 480V
G
R
= 3 W, L = 1mH, V
= 480V
G
CE
V
CE
o
T
= 150 C, V
= 10V AND 15V
J
GE
o
T
= 150 C, V
= 10V, V = 15V
GE
= 10V, V = 15V
GE GE
J
GE
o
T
= 25 C, V
J
60
o
T
= 25 C, V
= 10V AND 15V
50 60
J
GE
40
10
20
30
40
50
60
10
20
30
40
I
Collector to Emitter Current (A)
CE,
I
Collector to Emitter Current (A)
CE,
Figure 11. Turn−off Delay Time vs.
Figure 12. Fall Time vs. Collector to
Emitter Current
Collector to Emitter Current
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5
HGTG30N60B3
TYPICAL PERFORMANCE CURVES (Continued)
300
250
200
150
100
50
16
o
I
= 1mA, R = 10 W, T = 25 C
L C
DUTY CYCLE <0.5%, V
g (REF)
= 10V
CE
PULSE DURATION = 250 ms
14
12
10
8
o
T
= −55 C
C
V
= 600V
CE
o
T
= 150 C
C
o
T
= 25 C
C
6
V
= 200V
CE
4
V
= 400V
CE
2
0
0
0
50
100
150
200
4
5
6
7
8
9
10
11
Q , Gate Charge (nC)
G
V
GE,
Gate to Emitter Voltage (V)
Figure 13. Transfer Characteristics
Figure 14. Gate Charge Waveforms
10
8
FREQUENCY = 1MHz
C
IES
6
4
C
OES
2
C
RES
0
0
5
10
15
20
25
V
CE
, Collector to Emitter Voltage (V)
Figure 15. Capacitance vs. Collector to
Emitter Voltage
0
10
0.50
0.20
0.10
0.05
−1
10
0.02
0.01
t
1
P
D
DUTY FACTOR, D = t / t
−2
10
1
2
t
SINGLE PULSE
2
PEAK T = (P X Z
qJC
X R
) + T
qJC C
J
D
−5
10
−4
−3
−2
−1
0
1
10
10
10
10
10
10
t , Rectangular Pulse Duration (s)
1
Figure 16. Normalized Transient Thermal Response, Junction to Case
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6
HGTG30N60B3
TEST CIRCUITS AND WAVEFORMS
HGTG30N60B3D
90%
OFF
10%
ON
V
V
GE
E
E
CE
L = 1mH
90%
R
= 3 W
G
+
10%
d(OFF)I
I
CE
V
= 480 V
DD
t
t
−
rI
t
fI
t
d(ON)I
Figure 17. Inductive Switching Test Circuits
Figure 18. Switching Test Waveforms
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
to gate−insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the static
charge built in the handler’s body capacitance is not
discharged through the device. With proper handling
and application procedures, however, IGBTs are currently
being extensively used in production by numerous
equipment manufacturers in military, industrial
and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
5. Gate Voltage Rating
−
Never exceed
Exceeding
the gate−voltage rating of
V
.
GEM
the rated V can result in permanent damage to
GE
the oxide layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided. These
conditions can result in turn on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
or equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded by
any suitable means − for example, with a metallic
wristband.
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7
HGTG30N60B3
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
f
is defined by f
= (P − P )/(E
+ E
).
MAX2
MAX2
D
C
OFF
ON2
The allowable dissipation (P ) is defined by
P = (T − T )/R . The sum of device switching
D
D
JM
C
ꢃ JC
frequency vs collector current (I ) plots are possible
and conduction losses must not exceed P . A 50% duty
CE
D
using the information shown for
in Figures 5, 6, 7, 8, 9 and 11. The operating frequency
plot (Figure 3) of a typical device shows f or f
a
typical unit
factor was used (Figure 3) and the conduction losses (P )
C
are approximated by P = (V x I )/2.
C
CE
CE
;
E
and E
are defined in the switching waveforms
MAX1
MAX2
ON2
OFF
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
shown in Figure 18.
the instantaneous power loss (I x V ) during turn−on
E
is the integral of
ON2
CE
CE
and E
is the integral of the instantaneous power loss
OFF
f
1 is defined by f
= 0.05/(t
+ t
).
(I x V ) during turn−off. All tail losses are included in
CE CE
MAX
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to
the calculation for E
; i.e., the collector current equals
OFF
10% of the on−state time for a 50% duty factor. Other
zero (I = 0).
CE
definitions are possible. t
and t
are defined
d(OFF)I
d(ON)I
in Figure 18. Device turn−off delay can establish
an additional frequency limiting condition for
an application other than T . t
is important when
JM d(OFF)I
controlling output ripple under a lightly loaded condition.
All other brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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相关型号：
HGTG30N60B3D_NL
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
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