HGTP10N120BN [ONSEMI]
1200V，NPT IGBT;
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| 厂家： | 
ONSEMI |
| 描述： | 1200V，NPT IGBT 局域网 电动机控制 瞄准线 双极性晶体管 |
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HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet
August 2002
35A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTG10N120BN, HGTP10N120BN and
• 35A, 1200V, T = 25 C
C
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
• 1200V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Formerly Developmental Type TA49290.
Ordering Information
Packaging
PART NUMBER
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
PACKAGE
BRAND
G10N120BN
JEDEC STYLE TO-247
TO-247
E
C
TO-220AB
TO-263AB
10N120BN
10N120BN
COLLECTOR
(FLANGE)
G
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
G
COLLECTOR
(FLANGE)
E
C
G
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
35
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
17
80
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
55A at 1200V
298
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.38
W/ C
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
80
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
8
µs
µs
GE
SC
SC
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
15
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. I
CE
= 20A, L = 400µH, T = 25 C.
J
o
3. V
CE(PK)
= 840V, T = 125 C, R = 10Ω.
J
G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
= 0V
1200
-
-
CES
ECS
C
GE
= 10mA, V
15
-
-
-
250
-
V
C
GE
o
I
V
= 1200V
T
= 25 C
-
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
150
-
o
= 150 C
-
2
o
Collector to Emitter Saturation Voltage
V
I
= 10A,
= 25 C
-
2.45
3.7
6.8
-
2.7
4.2
-
CE(SAT)
C
V
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 90µA, V = V
CE GE
6.0
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T
= 150 C, R = 10Ω, V
= 15V,
55
-
J
G
GE
L = 400µH, V
= 1200V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 10A, V
= 600V
CE
-
-
-
10.4
100
130
-
V
GEP
C
Q
= 10A,
V
= 15V
120
150
nC
nC
G(ON)
C
GE
GE
V
= 600V
CE
V
= 20V
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
23
MAX
26
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 10A
CE
t
11
15
ns
rI
d(OFF)I
V
V
= 960V
= 15V
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
165
100
0.32
0.85
0.8
21
210
140
0.4
1.1
1.0
25
ns
R
= 10Ω
G
L = 2mH
Test Circuit (Figure 18)
t
ns
fI
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
E
E
E
mJ
mJ
mJ
ns
ON1
ON2
OFF
o
t
IGBT and Diode at T = 150 C
J
d(ON)I
I
= 10A
CE
t
11
15
ns
rI
d(OFF)I
V
V
= 960V
= 15V
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
190
140
0.4
1.75
1.1
-
250
200
0.5
2.3
1.4
0.42
ns
R
= 10Ω
G
L = 2mH
Test Circuit (Figure 18)
t
ns
fI
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
E
E
E
mJ
mJ
mJ
ON1
ON2
OFF
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss of the IGBT only. E
ON1
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 18.
Typical Performance Curves Unless Otherwise Specified
60
50
40
30
20
35
30
25
20
15
10
5
V
= 15V
GE
o
T
= 150 C, R = 10Ω, V = 15V, L = 400µH
J
G
GE
10
0
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
25
20
15
10
5
250
200
150
100
50
o
o
T
= 150 C, R = 10Ω, L = 2mH, V
= 960V
CE
V
= 840V, R = 10Ω, T = 125 C
G J
J
G
CE
100
50
t
SC
I
SC
o
T
= 75 C, V
= 15V, IDEAL DIODE
C
GE
10
1
f
= 0.05 / (t
d(OFF)I
= (P - P ) / (E
+ t
)
MAX1
d(ON)I
+ E )
OFF
T
V
C
o
o
o
o
GE
15V
f
MAX2
D
C
ON2
75 C
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.42 C/W, SEE NOTES
C
75 C 12V
110 C 15V
o
R
110 C 12V
ØJC
12
13
V , GATE TO EMITTER VOLTAGE (V)
GE
14
15
16
2
5
10
20
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
50
50
40
30
20
DUTY CYCLE <0.5%, V
GE
PULSE DURATION = 250µs
= 12V
o
T
= -55 C
C
o
T
= 25 C
C
40
30
20
10
0
o
o
T
= 150 C
o
T
= -55 C
C
C
T
= 25 C
C
o
T
= 150 C
C
10
0
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
2
4
6
8
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
2.0
R
= 10Ω, L = 2mH, V
= 960V
CE
R
= 10Ω, L = 2mH, V
= 960V
CE
G
G
4
3
2
1
0
1.5
1.0
0.5
0
o
o
T
= 150 C, V
= 12V, V = 15V
GE
T
= 150 C, V
= 12V OR 15V
J
GE
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
J
o
T
= 25 C, V
= 12V, V = 15V
GE
J
GE
0
5
10
15
20
0
5
10
15
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
35
30
25
20
15
50
40
30
20
10
0
R
= 10Ω, L = 2mH, V
= 960V
G
T
CE
R
= 10Ω, L = 2mH, V
= 960V
CE
G
o
o
= 25 C, T = 150 C, V
= 12V
J
J
GE
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
J
o
o
T
= 25 C OR T = 150 C, V
= 15V
J
J
GE
o
= 25 C, T = 150 C, V = 15V
GE
o
T
J
J
0
5
15
20
10
0
5
10
15
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
300
R
= 10Ω, L = 2mH, V
= 960V
CE
G
R
= 10Ω, L = 2mH, V
= 960V
CE
G
350
300
250
200
150
100
250
200
150
o
V
= 12V, V
GE
= 15V, T = 150 C
J
GE
o
= 150 C, V
T
= 12V OR 15V
GE
J
100
50
o
o
V
= 12V, V
5
= 15V, T = 25 C
J
T
= 25 C, V
= 12V OR 15V
10
GE
GE
J
GE
10
0
5
15
20
0
15
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
20
o
I
= 1mA, R = 60Ω, T = 25 C
DUTY CYCLE <0.5%, V
= 20V
G (REF)
L
C
CE
PULSE DURATION = 250µs
80
60
40
20
15
10
5
V
= 800V
CE
V
= 1200V
CE
V
= 400V
o
CE
T
= 25 C
C
o
T
= 150 C
C
8
o
T
= -55 C
C
0
0
7
9
10
11
12
13
14
15
0
20
40
Q , GATE CHARGE (nC)
G
60
80
120
100
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
4
3
2
1
0
15
12
9
o
DUTY CYCLE <0.5%, T = 110 C
C
PULSE DURATION = 250µs
FREQUENCY = 1MHz
V
= 15V
C
GE
IES
V
= 10V
GE
6
3
C
OES
C
RES
0
0
5
10
15
20
25
0
1
2
3
4
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
10
0.5
0.2
0.1
-1
10
0.05
t
1
0.02
0.01
DUTY FACTOR, D = t / t
P
1
2
D
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
t
2
SINGLE PULSE
-2
10
-5
-4
10
-3
-2
-1
0
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG10N120BND
90%
OFF
10%
V
GE
E
ON2
E
L = 2mH
V
CE
R
= 10Ω
G
90%
10%
d(OFF)I
+
I
CE
t
t
V
= 960V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t ).
+ t
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t are defined in Figure 19.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
CE
x I )/2.
CE
C
permanent damage to the oxide layer in the gate region.
E
and E
OFF
are defined in the switching waveforms
is the integral of the
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON2
shown in Figure 19. E
instantaneous power loss (I
ON2
x V ) during turn-on and
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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