IRFP150A [ONSEMI]
分立式 MOSFET;
| 型号： | IRFP150A |
| 厂家： | 
ONSEMI |
| 描述： | 分立式 MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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IRFP150A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
W
RDS(on) = 0.04
ID = 43 A
Improved Gate Charge
Extended Safe Operating Area
TO-3P
O
175 C Operating Temperature
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
W
1
2
3
Lower RDS(ON) : 0.032
(Typ.)
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
V
100
43
O
Continuous Drain Current (TC=25
)
C
ID
A
O
Continuous Drain Current (TC=100
Drain Current-Pulsed
)
C
30.4
170
IDM
VGS
EAS
IAR
1
A
V
O
+
_
Gate-to-Source Voltage
20
2
O
Single Pulsed Avalanche Energy
Avalanche Current
740
43
mJ
A
1
O
EAR
dv/dt
Repetitive Avalanche Energy
1
mJ
V/ns
19.3
6.5
O
3
Peak Diode Recovery dv/dt
O
O
Total Power Dissipation (T =25
)
W
193
1.28
C
C
PD
TJ , TSTG
TL
O
Linear Derating Factor
W/
C
Operating Junction and
Storage Temperature Range
- 55 to +175
300
O
C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
0.78
--
Units
R q
--
0.24
--
JC
O
R q
C
/W
CS
R q
Junction-to-Ambient
40
JA
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFP150A
O
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
m
V
GS=0V,ID=250 A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
100 --
--
O
m
DBV/DTJ
VGS(th)
ID=250 A
See Fig 7
V/
C
-- 0.11 --
m
V
DS=5V,ID=250 A
V
2.0
--
--
--
4.0
VGS=20V
GS=-20V
VDS=100V
DS=80V,TC=150
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
--
-- -100
--
--
--
10
IDSS
Drain-to-Source Leakage Current
m
A
O
C
V
--
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
W
W
VGS=10V,ID=21.5A
VDS=40V,ID=21.5A
--
--
O
0.04
gfs
Ciss
Coss
Crss
td(on)
tr
4
--
--
--
--
--
--
--
--
--
--
--
--
2270
485
215
50
28.34
1750
420
185
17
O
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
pF
See Fig 5
VDD=50V,ID=40A,
50
20
W
RG=6.2
ns
td(off)
tf
160
100
97
Turn-Off Delay Time
Fall Time
80
4
See Fig 13
5
O
O
45
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
75
V
DS=80V,VGS=10V,
Qgs
Qgd
nC
--
13.2
34.8
ID=40A
4
O
5
O
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
IS
ISM
VSD
trr
--
--
--
--
--
--
43
170
1.6
--
Integral reverse pn-diode
A
1
in the MOSFET
O
O
4
O
V
C
--
TJ=25 ,IS=43A,VGS=0V
O
ns
C
TJ=25 ,IF=40A
135
m
C
4
Qrr
m
diF/dt=100A/ s
-- 0.65 --
O
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=0.6mH, IAS=43A, VDD=25V, RG=27W , Starting TJ =25oC
2
O
ISD _ 40A, di/dt 470A/ s, V _ BVDSS , Starting TJ =25o
3
_
m
<
C
<
<
DD
O
_
<
4
Pulse Test : Pulse Width = 250 ms, Duty Cycle 2%
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
IRFP150A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
2
2
10
10
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
175 oC
Bottom : 4.5 V
1
10
1
10
25 oC
@ Notes :
1. V = 0 V
GS
@ Notes :
2. V = 40 V
- 55oC
DS
0
1. 250 s Pulse Test
10
m
3. 250 s Pulse Test
m
2. T = 25oC
C
0
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.06
2
10
0.05
0.04
0.03
0.02
0.01
0.00
V
= 10 V
GS
1
10
V
= 20 V
GS
@ Notes :
o
175 C
25
1. V = 0 V
GS
o
o
C
2. 250 s Pulse Test
m
@ Note : T = 25
C
J
0
10
0
25
50
75
100
125
150
175
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
3000
2000
1000
0
C
iss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ C
V
DS = 20 V
DS = 50 V
DS = 80 V
gd
C iss
10
Crss= C
gd
V
V
C oss
5
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
@ Notes : ID =40.0 A
60 70 80
0
0
1
0
10
20
30
40
50
10
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRFP150A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
@ Notes :
@ Notes :
1. V = 0 V
1. V = 10 V
GS
GS
2. I = 250 A
2. I = 20.0 A
D
m
D
0.8
-75 -50 -25
0
25
50
75
100 125 150 175 200
-75 -50 -25
0
25
50
75
100 125 150 175 200
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
50
3
10
Operation in This Area
is Limited by RDS(on)
40
30
20
10
0
10 s
m
2
10
100 s
m
1 ms
10 ms
1
DC
10
@ Notes :
0
1. T = 25oC
10
C
2. T = 175oC
J
3. Single Pulse
-1
10
0
1
2
25
50
75
100
125
150
175
10
10
10
T , Case Temperature [ oC]
V
DS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
100
10-1
10-2
D=0.5
0.2
@ Notes :
1. ZqJC(t)=0.78 oC/W Max.
2. Duty Factor, D=t/t2
3. TJM-TC=PDM*ZqJC(t)
1
0.1
0.05
PDM
0.02
0.01
t1
t2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRFP150A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
50KW
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFP150A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
IS
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
UHC™
VCX™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
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with instructions for use provided in the labeling, can be
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2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
IRFP150A_NL
Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN
FAIRCHILD
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