IRLML0030TRPBF [TYSEMI]

HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses; HEXFETpower MOSFET兼容现有的表面贴装技术降低开关损耗


型号：	IRLML0030TRPBF
厂家：	TY Semiconductor Co., Ltd
描述：	HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses HEXFETpower MOSFET兼容现有的表面贴装技术降低开关损耗开关
文件：	总2页 (文件大小：323K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Product specification

IRLML0030TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)

IRLML0030TRPbF

Application(s)

• Load/ System Switch

Features and Benefits

Features

Benefits

Low R_DS(on)( ≤ 27mΩ)

Industry-standard pinout

Lower switching losses

Multi-vendor compatibility

results in Easier manufacturing

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Industrial qualification

⇒

Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

5.3

4.3

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

0.8

0.01

± 20

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_θJA

Junction-to-Ambient

°C/W

R_θJA

–––

Junction-to-Ambient (t<10s)

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Product specification

IRLML0030TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

–––

0.02

–––

V_GS= 0V, I_D= 250μA

V_(BR)DSS/ T_J

Breakdown Voltage Temp. Coefficient

–––

1.3

V/°C Reference to 25°C, I_D= 1mA

V_GS= 4.5V, I_D= 4.2A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_GS= 10V, I_D= 5.2A

V_DS= V_GS, I_D= 25μA

V_DS=24V, V_GS= 0V

V_GS(th)

I_DSS

1.7

–––

2.3

–––

2.6

0.8

1.1

5.2

4.4

7.4

4.4

382

2.3

–––

9.5

Drain-to-Source Leakage Current

μA

150

100

-100

–––

V_DS= 24V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

V_GS= 20V

V_GS= -20V

R_G

gfs

Q_g

V_DS= 10V, I_D= 5.2A

I_D= 5.2A

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS=15V

V_GS= 4.5V

V_DD=15V

I_D= 1.0A

Rise Time

t_d(off)

t_f

Turn-Off Delay Time

R_G= 6.8Ω

V_GS= 4.5V

V_GS= 0V

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= 15V

Reverse Transfer Capacitance

ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

1.6

(Body Diode)

showing the

I_SM

Pulsed Source Current

integral reverse

–––

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.0

T_J= 25°C, I_S= 1.6A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 15V, I_F=1.6A

di/dt = 100A/μs

Q_rr

4.0

6.0

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