IRLML0040TRPBF [TYSEMI]

HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses; HEXFETpower MOSFET兼容现有的表面贴装技术降低开关损耗


型号：	IRLML0040TRPBF
厂家：	TY Semiconductor Co., Ltd
描述：	HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses HEXFETpower MOSFET兼容现有的表面贴装技术降低开关损耗晶体开关晶体管脉冲光电二极管 PC
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中文：	中文翻译
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Product specification

IRLML0040TRPbF

HEXFET^®Power MOSFET

V_DSS

± 16

V_{GS Max}

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)

IRLML0040TRPbF

Application(s)

• Load/ System Switch

• DC Motor Drive

Features and Benefits

Features

Low R_DS(on)( ≤ 56mΩ)

Benefits

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

Environmentally friendly

Increased reliability

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Consumer qualification

⇒

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

3.6

2.9

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

0.8

0.01

± 16

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_θJA

Junction-to-Ambient

°C/W

R_θJA

–––

Junction-to-Ambient (t<10s)

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Product specification

IRLML0040TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

–––

0.04

–––

V_GS= 0V, I_D= 250μA

V_(BR)DSS/ T_J

Breakdown Voltage Temp. Coefficient

–––

1.0

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 3.6A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_GS= 4.5V, I_D= 2.9A

V_GS(th)

I_DSS

1.8

–––

1.1

–––

2.6

0.7

1.4

5.1

5.4

6.4

4.3

266

2.5

V_DS= V_GS, I_D= 25μA

–––

6.2

V_DS= 40V, V_GS= 0V

Drain-to-Source Leakage Current

μA

250

100

-100

–––

3.9

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 16V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

V_GS= -16V

R_G

gfs

Q_g

_DS= 10V, I_D= 3.6A

I_D= 3.6A

V_DS= 20V

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

–––

V_GS= 4.5V

V_DD= 20V

I_D= 1.0A

Rise Time

t_d(off)

t_f

Turn-Off Delay Time

R_G= 6.8 Ω

V_GS= 4.5V

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

1.3

(Body Diode)

showing the

I_SM

Pulsed Source Current

integral reverse

–––

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.2

–––

T_J= 25°C, I_S= 1.3A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 32V, I_F= 1.3 A

di/dt = 100A/μs

Q_rr

9.3

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相关型号：

IRLML0060

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

INFINEON