ISL9R2480G2 [ROCHESTER]
24 A, 800 V, SILICON, RECTIFIER DIODE, TO-247;
| 型号： | ISL9R2480G2 |
| 厂家： | 
Rochester Electronics |
| 描述： | 24 A, 800 V, SILICON, RECTIFIER DIODE, TO-247 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISL9R2480G2
Data Sheet
November 2000
File Number 5005
PRELIMINARY
24A, 800V Stealth™ Diode
Features
The ISL9R2480G2 is a Stealth™ diode optimized for low
loss performance in high frequency applications.The Stealth
• Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2
b
a
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . t < 35ns
rr
family exhibits low reverse recovery current (I
) and
RRM
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
exceptionally soft recovery under typical operating
conditions.
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .800V
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
Applications
applications.The low I
and short t phase reduce loss in
RRM
a
• Switch Mode Power Supplies
• PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode
may be operated without the use of additional snubber
circuitry.
Formerly developmental type TA49392.
Ordering Information
• Snubber Diode
PART NUMBER
PACKAGE
BRAND
R2480G2
Packaging
ISL9R2480G2
TO-247
JEDEC STYLE 2 LEAD TO-247
NOTE: When ordering, use the entire part number.
ANODE
CATHODE
Symbol
CATHODE
(BOTTOM SIDE
METAL)
K
A
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
800
800
800
24
V
V
V
A
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
48
FRM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave 1 Phase 60Hz)
240
A
FSM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
160
W
D
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
, T
STG
-55 to 175
C
J
©2001 Fairchild Semiconductor Corporation
ISL9R2480G2 Rev. A
ISL9R2480G2
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
MIN
TYP
-
MAX
UNITS
V
BV
I
I
I
= 1mA
= 24A
800
-
R
F
F
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
2.0
-
3.0
V
F
o
= 24A, T = 125 C
2.5
V
C
I
V
V
= 600V
100
µA
mA
ns
ns
ns
A
R
R
R
o
= 600V, T = 125 C
-
1.0
C
t
I
I
I
= 1A, dI /dt = 100A/µs, V = 30V
27
35
rr
F
F
F
F
R
= 24A, dI /dt = 100A/µs, V = 30V
34
45
F
R
o
t
= 24A, dI /dt = 200A/µs, V = 520V, T = 25 C
35
-
rr
F
R
C
I
4.2
75
-
RRM
Q
-
nC
ns
RR
o
t
I
I
= 24A, dI /dt = 200A/µs, V = 520V, T = 125 C
145
3.8
5.0
500
72
-
rr
F
F
F
R
C
S
-
I
-
A
RRM
Q
-
nC
ns
RR
o
t
= 24A, dI /dt = 900A/µs, V = 520V, T = 125 C
-
rr
F
R
C
S
1.96
17.3
710
600
95
-
I
-
A
nC
RRM
Q
-
RR
dI /dt
-
-
A/µs
pF
M
C
V = 10V, I = 0A
R F
J
o
R
-
0.92
C/W
θJC
DEFINITIONS
BV = Breakdown Voltage.
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (t + t ).
a b
rr
I
= Maximum reverse recovery current.
= Reverse recovery charge.
RRM
Q
RR
S = Softness factor (t / t ).
b
a
dI /dt = Maximum di/dt during t .
M
b
C = Junction Capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = Duty cycle
©2001 Fairchild Semiconductor Corporation
ISL9R2480G2 Rev. A
ISL9R2480G2
TO-247
2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE (FOR RECTIFIERS ONLY)
INCHES
MIN
MILLIMETERS
TERM. 3
ØP
E
A
SYMBOL
MAX
0.190
0.051
0.070
0.026
0.820
0.625
MIN
4.58
MAX
4.82
NOTES
ØS
A
b
0.180
0.046
0.060
0.020
0.800
0.605
-
Q
1.17
1.29
2, 3
ØR
b
1.53
1.77
1, 2
1
D
c
0.51
0.66
1, 2, 3
D
E
20.32
15.37
20.82
15.87
-
-
e
0.438 BSC
11.12 BSC
4
5
-
L
1
1
b1
J
0.090
0.620
0.145
0.138
0.210
0.195
0.260
0.105
0.640
0.155
0.144
0.220
0.205
0.270
2.29
15.75
3.69
3.51
5.34
4.96
6.61
2.66
16.25
3.93
3.65
5.58
5.20
6.85
1
c
L
L
b
L
1
-
1
ØP
Q
1
2
2
1
e1
J
1
-
BACK VIEW
ØR
-
ØS
-
NOTES:
1. Lead dimension and finish uncontrolled in L .
1
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
6. Controlling dimension: Inch.
7. Revision 2 dated 12-93.
©2001 Fairchild Semiconductor Corporation
ISL9R2480G2 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET™
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
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