MBR3060PT [ONSEMI]
30 A 肖特基势垒整流器;型号: | MBR3060PT |
厂家: | ONSEMI |
描述: | 30 A 肖特基势垒整流器 二极管 |
文件: | 总7页 (文件大小:383K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2015
MBR3035PT - MBR3060PT
30 A Schottky Barrier Rectifiers
Description
Features
• Low Power Loss, High Efficiency
This center-tap Schottky rectifier is optimal for secondary
rectification and free-wheeling applications for high-effi-
ciency DC-DC convertor design, which features very low
forward voltage drop and low leakage current.
• High Surge Capacity
• Metal Silicon Junction, Majority Carrier Conduction
• High Current Capacity, Low Forward Voltage Drop
• Guard Ring for Over-Voltage Protection (OVP)
PIN1
+
Applications
• Low-Voltage
PIN3
CASE
PIN2
• High-Frequency Inverters
• Free Wheeling
2
3
1
• Polarity Protection
TO-3P/TO-247AD
Ordering Information
Part Number
MBR3035PT
MBR3045PT
MBR3050PT
MBR3060PT
Marking
Package
Packing Method
MBR3035PT
MBR3045PT
MBR3050PT
MBR3060PT
TO-247 3L
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Value
Symbol
Parameter
Unit
MBR
3035PT 3045PT 3050PT 3060PT
35 45 50 60
MBR
MBR
MBR
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
V
A
Average Rectified Forward Current
.375-inch Lead Length
30
Non-Repetitive Peak Forward Surge
Current: 8.3 ms Single Half-Sine Wave
IFSM
200
A
TSTG
TJ
Storage Temperature Range
-65 to +175
-65 to +150
°C
°C
Operating Junction Temperature Range
© 2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT Rev. 1.8
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
3.0
Unit
W
Power Dissipation
Thermal Resistance, Junction to Case
RθJC
1.4
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Value
Symbol
Parameter
IF = 20 A, TC = 25°C
Unit
MBR
MBR
MBR
MBR
3035PT 3045PT 3050PT 3060PT
0.75
IF = 20 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
TA = 25°C
0.60
0.76
0.72
0.1
0.65
Maximum Forward Voltage,
per Leg
VF
V
5.0
Maximum Reverse Current
at Rated VRRM, per Leg
IR
mA
A
TA = 125°C
60.0
100.0
Peak Repetitive Reverse Surge Current, per Leg
2.0 μs Pulse Width, f = 1.0 kHz
IRRM
1.0
0.5
© 2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT Rev. 1.8
www.fairchildsemi.com
2
Typical Performance Characteristics
30
300
250
200
150
100
50
MBR3035PT-MBR3045PT
24
MBR3050PT-MBR3060PT
18
SINGLE PHASE
HALF WAVE
12
6
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
0
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Ambient Temperature [ºC]
Number of Cycles at 60Hz
Figure 2. Non-Repetitive Surge Current
Figure 1. Forward Current Derating Curve
50
50
MBR3035PT-MBR3045PT
T
= 150ºC
T = 25ºC
A
A
10
10
1
T
= 125ºC
A
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
1
0.1
º
T
= 75 C
A
0.1
0.01
0.01
0.001
T
= 25ºC
A
Pulse Width = 300μS
2% Duty Cycle
MBR3050PT-MBR3060PT
0
20
40
60
80
100 120 140
0
0.2
0.4
0.6
0.8
1
1.2
Percent of Rated Peak Reverse Voltage [%]
Forward Voltage, VF [V]
Figure 4. Reverse Current vs. Reverse Voltage
Figure 3. Forward Voltage Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
Pulse Duration [s]
Figure 6. Thermal Impedance Characteristics
Figure 5. Total Capacitance
© 2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT Rev. 1.8
www.fairchildsemi.com
3
Physical Dimensions
Figure 7. TO-247, MOLDED, 3 LEADS, JEDEC OPTION AD
© 2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT Rev. 1.8
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
AttitudeEngine™
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
®
AX-CAP®*
Power Supply WebDesigner¥
PowerTrench®
PowerXS™
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Programmable Active Droop¥
GTO¥
IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
ESBC¥
MicroPak¥
SMART START¥
Solutions for Your Success¥
SPM®
®
UHC®
MicroPak2¥
MillerDrive¥
MotionMax¥
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Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
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XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
MTi®
SuperSOT¥-3
MTx®
FAST®
SuperSOT¥-6
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SupreMOS®
MVN®
FastvCore¥
FETBench¥
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mWSaver®
Xsens™
OptoHiT¥
❺
™
SyncFET¥
Sync-Lock™
OPTOLOGIC®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I74
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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