MBRAF2H100_16 [ONSEMI]
Surface Mount Schottky Power Rectifier;型号: | MBRAF2H100_16 |
厂家: | ONSEMI |
描述: | Surface Mount Schottky Power Rectifier |
文件: | 总5页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRAF2H100
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
Features
2.0 AMPERE
100 VOLTS
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• These are Pb−Free and Halide−Free Devices
SMA−FL
CASE 403AA
STYLE 6
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAM
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
RAA
AYWWG
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
RAA
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
†
Device
Package
Shipping
MBRAF2H100T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 3
MBRAF2H100/D
MBRAF2H100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
V
RWM
V
R
Average Rectified Forward Current
(T = 140°C)
L
I
A
A
A
O
2.0
4.0
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 145°C
R
L
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
130
Storage Temperature Range
T
−65 to +150
−65 to +150
°C
°C
stg
Operating Junction Temperature (Note 1)
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
25
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
Thermal Resistance, Junction−to−Ambient (Note 2)
R
90
q
JA
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Value
T = 25°C
J
T = 125°C
J
Characteristic
Symbol
Unit
v
V
Maximum Instantaneous Forward Voltage (Note 3)
(i = 2.0 A)
F
F
0.79
0.65
Maximum Instantaneous Reverse Current (Note 3)
(V = 100 V)
R
I
R
mA
0.050
9.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBRAF2H100
TYPICAL CHARACTERISTICS
100
10
100
150°C
25°C
125°C
10
125°C
150°C
25°C
1
1
0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
1
10
150°C
125°C
150°C
125°C
1
0.1
0.01
0.001
0.1
0.01
25°C
0.0001
25°C
0.00001
0.001
0
10 20 30 40 50 60 70 80 90 100
0
10
20 30 40 50 60
70 80 90 100
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
450
400
4
3
R
= 25°C/W
q
JL
DC
T = 25°C
J
350
300
250
200
150
100
50
f = 1 MHz
Square Wave
2
1
0
0
0
10 20
30 40 50 60 70 80 90 100
0 10
30
50
70
90
110
130 150
V , REVERSE VOLTAGE (V)
R
T , LEAD TEMPERATURE (°C)
C
Figure 5. Typical Capacitance
Figure 6. Current Derating
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3
MBRAF2H100
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 7. Typical Transient Thermal Response, Junction−to−Ambient
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4
MBRAF2H100
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE A
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
MAX
1.10
1.65
0.30
2.80
5.40
4.60
1.10
D
A
b
c
D
E
0.90
1.25
0.15
2.40
4.80
TOP VIEW
SIDE VIEW
E1 4.00
0.70
L
A
RECOMMENDED
SOLDER FOOTPRINT*
c
SEATING
PLANE
C
5.56
1.76
2X b
1.30
2X
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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◊
NBRAF2H100/D
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