MC100EPT25D [ONSEMI]

Differential LVECL/ECL to LVTTL Translator; 差分LVECL / ECL为LVTTL翻译
MC100EPT25D
型号: MC100EPT25D
厂家: ONSEMI    ONSEMI
描述:

Differential LVECL/ECL to LVTTL Translator
差分LVECL / ECL为LVTTL翻译

转换器 电平转换器 驱动程序和接口 锁存器 接口集成电路 光电二极管
文件: 总8页 (文件大小:99K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
The MC100EPT25 is a Differential LVECL/ECL to LVTTL  
translator. This device requires +3.3V, 3.3V to –5.2V, and ground.  
The small outline 8–lead SOIC package and the single gate of the  
EPT25 make it ideal for applications which require the translation of a  
clock or data signal.  
The VBB output allows the EPT25 to also be used in a single–ended  
input mode. In this mode the VBB output is tied to the D input for a  
non–inverting buffer or the D input for an inverting buffer. If used, the  
VBB pin should be bypassed to ground via a 0.01mF capacitator.  
http://onsemi.com  
MARKING  
DIAGRAMS*  
8
SO–8  
D SUFFIX  
CASE 751  
HPT25  
ALYW  
8
1
1.1ns Typical Propagation Delay  
275MHz Fmax (Clock bit stream, not pseudo–random)  
Differential LVECL/ECL inputs  
Small Outline SOIC Package  
24mA TTL outputs  
1
8
TSSOP–8  
DT SUFFIX  
CASE 948R  
HR25  
ALYW  
8
1
1
Flow Through Pinouts  
A = Assembly Location  
L = Wafer Lot  
Y = Year  
Internal Input Resistors: Pulldown on D, Pulldown and Pullup on D  
Q Output will default LOW with inputs open or at GND  
ESD Protection: >4000V HBM, >200V MM  
W = Work Week  
*For additional information, see Application Note  
AND8002/D  
V Output  
BB  
New Differential Input Common Mode Range  
Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.  
For Additional Information, See Application Note AND8003/D  
Flammability Rating: UL–94 code V–0 @ 1/8”,  
Oxygen Index 28 to 34  
PIN DESCRIPTION  
PIN  
Q
FUNCTION  
LVTTL Output  
Transistor Count = 111 devices  
D, D  
Differential LVECL Input Pair  
Positive Supply  
V
CC  
V
1
2
8
7
V
CC  
EE  
V
BB  
GND  
Output Reference Voltage  
Ground  
LVTTL  
V
EE  
Negative Supply  
D
Q
D
3
4
6
5
NC  
GND  
ORDERING INFORMATION  
LVECL  
Device  
Package  
Shipping  
MC100EPT25D  
MC100EPT25DR2  
MC100EPT25DT  
SO–8  
98 Units / Rail  
VBB  
SO–8  
2500 / Reel  
98 Units / Rail  
2500 / Reel  
TSSOP–8  
MC100EPT25DTR2 TSSOP–8  
Figure 1. 8–Lead Pinout (Top View) and Logic Diagram  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 1  
MC100EPT25/D  
MC100EPT25  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
0 to 3.8  
–6.0 to 0  
0 to 3.8  
Unit  
VDC  
VDC  
VDC  
mA  
V
CC  
V
EE  
V
I
Power Supply (Referenced to GND, V  
Power Supply (Referenced to GND, V  
= –3.3V)  
= +3.3V)  
EE  
CC  
Input Voltage (V not more positive than GND)  
I
I
Output Current  
Continuous  
Surge  
50  
100  
out  
I
V
Sink/Source Current  
± 0.5  
mA  
°C  
BB  
BB  
T
Operating Temperature Range  
Storage Temperature  
–40 to +85  
–65 to +150  
A
T
°C  
stg  
θ
Thermal Resistance (Junction–to–Ambient)  
Still Air  
500lfpm  
190  
130  
°C/W  
JA  
θ
Thermal Resistance (Junction–to–Case)  
41 to 44 ± 5%  
°C/W  
°C  
JC  
T
Solder Temperature (<2 to 3 Seconds: 245°C desired)  
265  
sol  
* Maximum Ratings are those values beyond which damage to the device may occur.  
Use for inputs of same package only.  
DC CHARACTERISTICS, ECL/LVECL (V  
= +3.3V; V  
= –5.5V to –3.0V, GND = 0V)  
EE  
CC  
–40°C  
Typ  
16  
25°C  
Typ  
16  
85°C  
Typ  
16  
Symbol  
Characteristic  
Power Supply Current  
Min  
Max  
Min  
Max  
Min  
Max  
Unit  
8.0  
25  
8.0  
25  
8.0  
25  
mA  
IEE  
(Note 1.)  
V
Input HIGH Voltage Single Ended  
(Note 4.)  
–1165  
–1810  
–880 –1165  
–1625 –1810  
–880 –1165  
–1625 –1810  
–880  
–1625  
mV  
mV  
IH  
IL  
V
Input LOW Voltage Single Ended  
(Note 4.)  
V
V
Output Voltage Reference  
–1550 –1450 –1350 –1550 –1450 –1350 –1550 –1450 –1350  
mV  
V
BB  
Input HIGH Voltage Common Mode  
Range (Note 3.)  
V +2.0  
EE  
0.0  
V +2.0  
EE  
0.0  
V +2.0  
EE  
0.0  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current  
D
D
0.5  
–150  
0.5  
–150  
0.5  
–150  
IL  
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.  
1. (V  
= +3.3V, GND = 0V, V  
= –3.3V), all other pins floating.  
2. All loading with 500 ohms to GND, C = 20pF.  
CC  
EE  
L
3. V  
min varies 1:1 with V , max varies 1:1 with V .  
EE CC  
IHCMR  
4. Input and output parameters vary 1:1 with V  
.
CC  
http://onsemi.com  
2
MC100EPT25  
TTL OUTPUT DC CHARACTERISTICS (V  
= 3.3V ± 0.3V; GND = 0V; V  
= –3.3V ± 0.3V; T = –40°C to 85°C)  
EE A  
CC  
Symbol  
Characteristic  
Power Supply Current (Outputs set to HIGH)  
Power Supply Current (Outputs set to LOW)  
Output HIGH Voltage (I = –3.0mA) (Note 5.)  
Min  
6.0  
7.0  
2.2  
Typ  
10  
Max  
14  
Unit  
mA  
mA  
V
I
I
CCH  
12  
17  
CCL  
V
V
OH  
OH  
= 24mA) (Note 5.)  
Output LOW Voltage (I  
OL  
0.5  
V
OL  
I
Output Short Circuit Current  
–130  
–60  
mA  
OS  
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.  
5. All loading with 500 ohms to GND, CL = 20pF.  
AC CHARACTERISTICS (V  
= 3.3V ± 0.3V; GND = 0V)  
–40°C  
CC  
25°C  
85°C  
Symbol  
Characteristic  
Min  
275  
800  
Typ  
Max  
Min  
275  
800  
Typ  
Max  
Min  
275  
800  
Typ  
Max  
Unit  
MHz  
ns  
f
Maximum Toggle Frequency  
max  
t
t
,
Propagation Delay to  
Output Differential  
1200  
1800  
1100  
1600  
1100  
1600  
PLH  
PHL  
t
t
t
Output–to–Output Skew++  
Output–to–Output Skew– –  
Part–to–Part Skew (Note 6.)  
60  
25  
500  
60  
25  
500  
60  
25  
500  
ps  
SK+ +  
SK– –  
SKPP  
t
Cycle–to–Cycle Jitter  
TBD  
800  
TBD  
800  
TBD  
800  
ps  
JITTER  
V
Input Voltage Swing  
(Differential) (Note 7.)  
100  
1200  
100  
1200  
100  
1200  
mV  
PP  
t
r
t
f
Output Rise/Fall Times  
(0.8V – 2.0V)  
Q, Q  
450  
900  
600  
1160  
750  
1400  
450  
900  
600  
1100  
750  
1400  
450  
900  
600  
1100  
750  
1400  
ps  
6. Skews are measured between outputs under identical conditions.  
7. 200mV input guarantees full logic swing at the output.  
http://onsemi.com  
3
MC100EPT25  
PACKAGE DIMENSIONS  
SO–8  
D SUFFIX  
PLASTIC SOIC PACKAGE  
CASE 751–06  
ISSUE T  
NOTES:  
D
A
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
C
2. DIMENSIONS ARE IN MILLIMETER.  
3. DIMENSION D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS  
OF THE B DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
8
1
5
4
M
M
0.25  
B
H
E
h X 45  
MILLIMETERS  
B
e
DIM MIN  
MAX  
1.75  
0.25  
0.49  
0.25  
5.00  
4.00  
A
A1  
B
C
D
E
1.35  
0.10  
0.35  
0.19  
4.80  
3.80  
A
C
SEATING  
PLANE  
L
e
1.27 BSC  
0.10  
H
h
L
5.80  
0.25  
0.40  
0
6.20  
0.50  
1.25  
7
A1  
B
M
S
S
0.25  
C B  
A
http://onsemi.com  
4
MC100EPT25  
PACKAGE DIMENSIONS  
TSSOP–8  
DT SUFFIX  
PLASTIC TSSOP PACKAGE  
CASE 948R–02  
ISSUE A  
8x K REF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
M
S
S
0.10 (0.004)  
T U  
V
Y14.5M, 1982.  
S
0.15 (0.006) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS. MOLD  
FLASH OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT  
EXCEED 0.25 (0.010) PER SIDE.  
2X L/2  
8
5
4
0.25 (0.010)  
B
–U–  
L
1
M
PIN 1  
IDENT  
5. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
6. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
0.15 (0.006) T U  
A
–V–  
F
DETAIL E  
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
3.10  
3.10  
1.10 0.031  
0.15 0.002  
0.70 0.016  
MIN  
0.114  
0.114  
MAX  
0.122  
0.122  
0.043  
0.006  
0.028  
A
B
C
D
F
2.90  
2.90  
0.80  
0.05  
0.40  
C
0.10 (0.004)  
SEATING  
PLANE  
–W–  
D
–T–  
G
G
K
L
0.65 BSC  
0.026 BSC  
0.016  
0.193 BSC  
0.25  
0.40 0.010  
4.90 BSC  
DETAIL E  
M
0
6
0
6
http://onsemi.com  
5
MC100EPT25  
Notes  
http://onsemi.com  
6
MC100EPT25  
Notes  
http://onsemi.com  
7
MC100EPT25  
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
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MC100EPT25/D  

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