MC14572UBF [ONSEMI]
Hex Gate; 六角门型号: | MC14572UBF |
厂家: | ONSEMI |
描述: | Hex Gate |
文件: | 总8页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
The MC14572UB hex functional gate is constructed with MOS
P–channel and N–channel enhancement mode devices in a single
monolithic structure. These complementary MOS logic gates find
primary use where low power dissipation and/or high noise immunity
is desired. The chip contains four inverters, one NOR gate and one
NAND gate.
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• Diode Protection on All Inputs
• Single Supply Operation
MARKING
DIAGRAMS
16
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
PDIP–16
P SUFFIX
CASE 648
• NOR Input Pin Adjacent to V Pin to Simplify Use As An Inverter
SS
MC14572UBCP
AWLYYWW
• NAND Input Pin Adjacent to V Pin to Simplify Use As An
DD
Inverter
1
• NOR Output Pin Adjacent to Inverter Input Pin For OR Application
• NAND Output Pin Adjacent to Inverter Input Pin For AND
Application
16
SOIC–16
D SUFFIX
CASE 751B
14572U
AWLYWW
• Capable of Driving Two Low–power TTL Loads or One Low–Power
Schottky TTL Load over the Rated Temperature Range
1
16
SOEIAJ–16
F SUFFIX
CASE 966
MC14572UB
AWLYWW
MAXIMUM RATINGS (Voltages Referenced to V ) (Note 2.)
SS
1
Symbol
Parameter
Value
Unit
V
A
= Assembly Location
V
DD
DC Supply Voltage Range
–0.5 to +18.0
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
V , V
in out
Input or Output Voltage Range
(DC or Transient)
–0.5 to V + 0.5
V
DD
I , I
in out
Input or Output Current
(DC or Transient) per Pin
±10
mA
ORDERING INFORMATION
P
Power Dissipation,
per Package (Note 3.)
500
mW
D
Device
Package
PDIP–16
SOIC–16
Shipping
MC14572UBCP
MC14572UBD
2000/Box
48/Rail
T
A
Ambient Temperature Range
Storage Temperature Range
–55 to +125
–65 to +150
260
°C
°C
°C
T
stg
T
Lead Temperature
(8–Second Soldering)
L
MC14572UBDR2
SOIC–16 2500/Tape & Reel
MC14572UBF
SOEIAJ–16
See Note 1.
See Note 1.
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
MC14572UBFEL SOEIAJ–16
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
1. For ordering information on the EIAJ version of
the SOIC packages, please contact your local
ON Semiconductor representative.
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedancecircuit. For proper operation, V and V should be constrained
in
out
to the range V
(V or V
)
V
DD
.
SS
in
out
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either V or V ). Unused outputs must be left open.
SS
DD
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
March, 2000 – Rev. 3
MC14572UB/D
MC14572UB
PIN ASSIGNMENT
OUT
1
2
3
4
5
6
7
8
16
V
DD
A
IN
A
15 IN 2
F
OUT
14 IN 1
F
B
IN
B
13 OUT
F
OUT
12 IN
E
C
IN 1
11 OUT
C
E
IN 2
10 IN
D
C
V
SS
9
OUT
D
LOGIC DIAGRAM
2
1
4
3
5
9
6
7
10
12
11
13
14
15
V
V
= PIN 16
= PIN 8
DD
SS
CIRCUIT SCHEMATIC
V
DD
V
DD
V
DD
7
6
2
1
13
14
15
5
V
SS
V
SS
V
SS
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2
MC14572UB
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
)
SS
– 55 C
25 C
125 C
V
DD
(4.)
Vdc
Characteristic
Output Voltage
Symbol
Unit
Min
Max
Min
Typ
Max
Min
Max
“0” Level
“1” Level
“0” Level
V
OL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
V
in
= V or 0
DD
V
in
= 0 or V
V
OH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
Vdc
DD
Input Voltage
(V = 4.5 or 0.5 Vdc)
V
IL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
1.0
2.0
2.5
O
(V = 9.0 or 1.0 Vdc)
O
(V = 13.5 or 1.5 Vdc)
O
“1” Level
V
IH
Vdc
(V = 0.5 or 4.5 Vdc)
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4.0
8.0
12.5
—
—
—
O
(V = 1.0 or 9.0 Vdc)
O
(V = 1.5 or 13.5 Vdc)
O
Output Drive Current
I
mAdc
OH
(V = 2.5 Vdc)
Source
Sink
5.0
5.0
10
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
– 0.7
– 0.14
– 0.35
– 1.1
—
—
—
—
OH
(V = 4.6 Vdc)
OH
(V = 9.5 Vdc)
OH
(V = 13.5 Vdc)
OH
15
(V = 0.4 Vdc)
I
OL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
OL
(V = 0.5 Vdc)
OL
(V = 1.5 Vdc)
OL
Input Current
Input Capacitance
I
15
—
—
—
±0.1
—
—
±0.00001
±0.1
—
—
±1.0
µAdc
in
C
—
5.0
7.5
—
pF
in
(V = 0)
in
Quiescent Current
(Per Package)
I
5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
7.5
15
30
µAdc
µAdc
DD
(5.) (6.)
Total Supply Current
I
T
5.0
10
15
I = (1.89 µA/kHz) f + I
T
I = (3.80 µA/kHz) f + I
T
I = (5.68 µA/kHz) f + I
T
DD
DD
DD
(Dynamic plus Quiescent,
Per Package)
(C = 50 pF on all outputs, all
L
buffers switching)
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25 C.
6. To calculate total supply current at loads other than 50 pF:
I (C ) = I (50 pF) + (C – 50) Vfk
T
L
T
L
where: I is in µA (per package), C in pF, V = (V – V ) in volts, f in kHz is input frequency, and k = 0.006.
T
L
DD
SS
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3
MC14572UB
SWITCHING CHARACTERISTICS (7.) (C = 50 pF, T = 25 C)
L
A
(8.)
Characteristic
Symbol
V
DD
Min
Typ
Max
Unit
Output Rise Time
t
ns
TLH
THL
t
t
t
= (3.0 ns/pF) C + 30 ns
= (1.5 ns/pF) C + 15 ns
= (1.1 ns/pF) C + 10 ns
5.0
10
15
—
—
—
180
90
65
360
180
130
TLH
TLH
TLH
L
L
L
Output Fall Time
t
ns
ns
t
t
t
= (1.5 ns/pF) C + 25 ns
= (0.75 ns/pF) C + 12.5 ns
= (0.55 ns/pF) C + 9.5 ns
5.0
10
15
—
—
—
100
50
40
200
100
80
THL
THL
THL
L
L
L
Propagation Delay Time
t
,
PLH
t
t
t
, t
= (1.7 ns/pF) C + 5 ns
= (0.66 ns/pF) C + 17 ns
L
= (0.5 ns/pF) C + 15 ns
L
t
PHL
5.0
10
15
—
—
—
90
50
40
180
100
80
PLH PHL
L
, t
PLH PHL
, t
PLH PHL
7. The formulas given are for the typical characteristics only at 25 C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
V
DD
V
DD
INPUT
7
16
16
INPUT
2
PULSE
GENERATOR
PULSE
GENERATOR
6
OUTPUT
OUTPUT
1
5
C
L
8
V
SS
8
V
SS
C
L
V
DD
20 ns
20 ns
V
16
DD
90%
50%
10%
90%
INPUT
50%
14
INPUT
15
10%
V
SS
OUTPUT
PULSE
GENERATOR
t
t
PHL
PLH
13
V
8
V
SS
C
L
OH
90%
50%
10%
90%
50%
10%
OUTPUT
V
OL
t
f
t
r
Figure 1. Switching Time Test Circuits and Waveforms
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4
MC14572UB
PACKAGE DIMENSIONS
PDIP–16
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
–A–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
16
1
9
8
B
S
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
INCHES
DIM MIN MAX
0.740 0.770 18.80 19.55
MILLIMETERS
MIN MAX
F
A
B
C
D
F
G
H
J
K
L
M
S
C
L
0.250 0.270
0.145 0.175
0.015 0.021
6.35
3.69
0.39
1.02
6.85
4.44
0.53
1.77
0.040
0.70
SEATING
PLANE
–T–
0.100 BSC
0.050 BSC
0.008 0.015
2.54 BSC
1.27 BSC
K
M
0.21
0.38
3.30
7.74
10
H
J
0.110
0.295 0.305
10
0.020 0.040
0.130
2.80
7.50
0
G
D 16 PL
0
0.51
1.01
M
M
0.25 (0.010)
T A
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5
MC14572UB
PACKAGE DIMENSIONS
SOIC–16
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
16
1
9
8
–B–
P 8 PL
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
M
S
0.25 (0.010)
B
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.393
0.157
0.068
0.019
0.049
F
A
B
C
D
F
9.80
3.80
1.35
0.35
0.40
10.00 0.386
4.00 0.150
1.75 0.054
0.49 0.014
1.25 0.016
R X 45
K
C
G
J
K
M
P
1.27 BSC
0.050 BSC
–T–
SEATING
PLANE
0.19
0.10
0
0.25 0.008
0.25 0.004
0.009
0.009
7
J
M
D
16 PL
7
0
5.80
0.25
6.20 0.229
0.50 0.010
0.244
0.019
M
S
S
0.25 (0.010)
T B
A
R
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6
MC14572UB
PACKAGE DIMENSIONS
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
ISSUE O
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
L
E
16
9
8
Q
1
H
E
M
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
E
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
1
L
DETAIL P
Z
D
VIEW P
e
MILLIMETERS
INCHES
A
DIM MIN
MAX
MIN
–––
MAX
0.081
0.008
0.020
0.011
0.413
0.215
c
A
1
–––
0.05
0.35
0.18
9.90
5.10
2.05
A
0.20 0.002
0.50 0.014
0.27 0.007
10.50 0.390
5.45 0.201
b
c
D
E
A
1
b
0.13 (0.005)
e
1.27 BSC
0.050 BSC
0.10 (0.004)
M
H
7.40
0.50
1.10
0
0.70
–––
8.20 0.291
0.85 0.020
1.50 0.043
10
0.90 0.028
0.78 –––
0.323
0.033
0.059
10
0.035
0.031
E
L
L
E
M
Q
0
1
Z
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7
MC14572UB
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MC14572UB/D
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