MC74HC86AFEL [ONSEMI]

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS; 四2输入异或门高性能硅栅CMOS
MC74HC86AFEL
型号: MC74HC86AFEL
厂家: ONSEMI    ONSEMI
描述:

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
四2输入异或门高性能硅栅CMOS

栅极 触发器 逻辑集成电路 石英晶振 光电二极管
文件: 总8页 (文件大小:163K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74HC86A  
Quad 2−Input Exclusive  
OR Gate  
HighPerformance SiliconGate CMOS  
The MC74HC86A is identical in pinout to the LS86. The device  
inputs are compatible with standard CMOS outputs; with pullup  
resistors, they are compatible with LSTTL outputs.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
Output Drive Capability: 10 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
14  
1
PDIP14  
N SUFFIX  
CASE 646  
MC74HC86AN  
AWLYYWWG  
14  
Low Input Current: 1 mA  
1
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with JEDEC Standard No. 7A Requirements  
Chip Complexity: 56 FETs or 14 Equivalent Gates  
PbFree Packages are Available  
14  
SOIC14  
D SUFFIX  
HC86AG  
AWLYWW  
14  
CASE 751A  
1
1
14  
HC  
86A  
ALYWG  
G
TSSOP14  
DT SUFFIX  
CASE 948G  
14  
1
1
14  
SOEIAJ14  
F SUFFIX  
CASE 965  
74HC86A  
ALYWG  
14  
1
1
A
L, WL  
Y, YY  
= Assembly Location  
= Wafer Lot  
= Year  
W, WW = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 4  
MC74HC86A/D  
MC74HC86A  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
1
3
2
A1  
B1  
1
2
14  
13 B4  
12  
V
A1  
B1  
CC  
Y1  
Y2  
Y3  
Y4  
Y1  
A2  
3
4
A4  
4
6
5
A2  
B2  
11 Y4  
10 B3  
B2  
Y2  
5
6
9
9
8
A3  
Y3  
A3  
B3  
8
10  
GND  
7
12  
A4  
B4  
11  
13  
FUNCTION TABLE  
Y = A B  
= AB + AB  
PIN 14 = V  
CC  
Inputs  
Output  
PIN 7 = GND  
A
B
Y
L
L
H
H
L
H
L
L
H
H
L
H
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74HC86AN  
PDIP14  
25 Units / Rail  
55 Units / Rail  
MC74HC86ANG  
PDIP14  
(PbFree)  
MC74HC86AD  
SOIC14  
MC74HC86ADG  
SOIC14  
(PbFree)  
MC74HC86ADR2  
MC74HC86ADR2G  
SOIC14  
SOIC14  
(PbFree)  
2500 / Tape & Reel  
MC74HC86ADTR2  
MC74HC86ADTR2G  
MC74HC86AF  
TSSOP14*  
TSSOP14*  
SOEIAJ14  
50 Units / Rail  
MC74HC86AFG  
SOEIAJ14  
(PbFree)  
MC74HC86AFEL  
SOEIAJ14  
2000 / Tape & Reel  
MC74HC86AFELG  
SOEIAJ14  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently PbFree.  
http://onsemi.com  
2
MC74HC86A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this highimpedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V + 0.5  
V
in  
CC  
V
out  
– 0.5 to V + 0.5  
V
CC  
I
± 20  
± 25  
± 50  
mA  
mA  
mA  
mW  
in  
I
DC Output Current, per Pin  
cuit. For proper operation, V and  
out  
CC  
in  
V
out  
should be constrained to the  
I
DC Supply Current, V and GND Pins  
CC  
range GND v (V or V ) v V  
.
in  
out  
CC  
P
D
Power Dissipation in Still Air,  
Plastic DIP†  
SOIC Package†  
TSSOP Package†  
750  
500  
450  
Unused inputs must always be  
tied to an appropriate logic voltage  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP, SOIC or TSSOP Package)  
L
260  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress  
ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device  
reliability.  
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C  
SOIC Package: – 7 mW/_C from 65_ to 125_C  
TSSOP Package: 6.1 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
6.0  
V , V  
in out  
DC Input Voltage, Output Voltage (Referenced to  
GND)  
V
CC  
V
T
Operating Temperature, All Package Types  
– 55  
+ 125  
_C  
A
t , t  
r
Input Rise and Fall Time  
(Figure 1)  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
ns  
f
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
25_C  
V
v 85_C  
v 125_C  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V – 0.1 V  
|I | v 20 mA  
Unit  
V
IH  
Minimum HighLevel Input  
V
2.0  
3.0  
4.5  
6.0  
1.5  
2.1  
1.5  
2.1  
1.5  
2.1  
V
out  
CC  
Voltage  
out  
3.15  
4.2  
3.15  
4.2  
3.15  
4.2  
V
Maximum LowLevel Input  
Voltage  
V
= 0.1 V or V – 0.1 V  
2.0  
3.0  
4.5  
6.0  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
V
V
IL  
out  
CC  
|I | v 20 mA  
out  
V
OH  
Minimum HighLevel Output  
Voltage  
V
in  
= V or V  
IL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
IH  
|I | v 20 mA  
out  
V
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.20  
3.70  
5.20  
in  
IH  
IL  
out  
|I | v 4.0 mA  
out  
|I | v 5.2 mA  
out  
V
OL  
Maximum LowLevel Output  
V
V
in  
= V or V  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
IH  
IL  
Voltage  
|I | v 20 mA  
out  
V
in  
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
0.26  
0.26  
0.26  
0.33  
0.33  
0.33  
0.40  
0.40  
0.40  
IH  
IL  
out  
|I | v 4.0 mA  
out  
|I | v 5.2 mA  
out  
http://onsemi.com  
3
MC74HC86A  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
25_C  
v 85_C  
v 125_C  
V
Symbol  
Parameter  
Test Conditions  
= V or GND  
Unit  
mA  
I
in  
Maximum Input Leakage Current  
V
V
6.0  
6.0  
± 0.1  
± 1.0  
± 1.0  
in  
CC  
I
Maximum Quiescent Supply  
Current (per Package)  
= V or GND  
1.0  
10  
40  
mA  
CC  
in  
CC  
I
= 0 mA  
out  
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book  
(DL129/D).  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t, = t = 6 ns)  
L
f
Guaranteed Limit  
– 55 to  
V
CC  
25_C  
V
v 85_C  
v 125_C  
Symbol  
Parameter  
Unit  
t
,
Maximum Propagation Delay, Input A or B to Output Y  
(Figures 1 and 2)  
2.0  
3.0  
4.5  
6.0  
100  
80  
125  
90  
150  
110  
31  
ns  
PLH  
t
PHL  
20  
17  
25  
21  
26  
t
t
,
Maximum Output Transition Time, Any Output  
(Figures 1 and 2)  
2.0  
3.0  
4.5  
6.0  
75  
30  
15  
13  
95  
40  
19  
16  
110  
55  
22  
ns  
TLH  
THL  
19  
C
Maximum Input Capacitance  
10  
10  
10  
pF  
in  
NOTES:  
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
Typical @ 25°C, V = 5.0 V  
CC  
33  
C
Power Dissipation Capacitance (Per Gate)*  
pF  
PD  
2
* Used to determine the noload dynamic power consumption: P = C  
V
f + I V . For load considerations, see Chapter 2 of the  
CC CC  
D
PD CC  
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
t
r
t
f
V
CC  
90%  
50%  
10%  
INPUT  
TEST POINT  
A OR B  
GND  
OUTPUT  
DEVICE  
t
t
PHL  
PLH  
UNDER  
TEST  
90%  
50%  
10%  
C *  
L
OUTPUT Y  
t
t
THL  
TLH  
*Includes all probe and jig capacitance  
Figure 1. Switching Waveforms  
Figure 2. Test Circuit  
A
Y
B
Figure 3. Expanded Logic Diagram  
(1/4 of Device)  
http://onsemi.com  
4
MC74HC86A  
PACKAGE DIMENSIONS  
PDIP14  
CASE 64606  
ISSUE P  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEADS WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.  
5. ROUNDED CORNERS OPTIONAL.  
14  
1
8
7
B
INCHES  
MILLIMETERS  
A
F
DIM  
A
B
C
D
F
MIN  
MAX  
0.770  
0.260  
0.185  
0.021  
0.070  
MIN  
18.16  
6.10  
3.69  
0.38  
1.02  
MAX  
19.56  
6.60  
4.69  
0.53  
1.78  
0.715  
0.240  
0.145  
0.015  
0.040  
L
N
C
G
H
J
K
L
M
N
0.100 BSC  
2.54 BSC  
0.052  
0.008  
0.115  
0.290  
−−−  
0.095  
0.015  
0.135  
0.310  
10  
1.32  
0.20  
2.92  
7.37  
−−−  
0.38  
2.41  
0.38  
3.43  
7.87  
10  
T−  
SEATING  
PLANE  
J
_
_
K
0.015  
0.039  
1.01  
D 14 PL  
H
G
M
M
0.13 (0.005)  
http://onsemi.com  
5
MC74HC86A  
PACKAGE DIMENSIONS  
SOIC14  
CASE 751A03  
ISSUE H  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
A−  
14  
8
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.127  
(0.005) TOTAL IN EXCESS OF THE D  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
B−  
P 7 PL  
M
M
B
0.25 (0.010)  
7
1
G
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
F
R X 45  
_
C
A
B
C
D
F
G
J
K
M
P
R
8.55  
3.80  
1.35  
0.35  
0.40  
8.75 0.337 0.344  
4.00 0.150 0.157  
1.75 0.054 0.068  
0.49 0.014 0.019  
1.25 0.016 0.049  
0.050 BSC  
0.25 0.008 0.009  
0.25 0.004 0.009  
T−  
SEATING  
PLANE  
J
M
K
1.27 BSC  
D 14 PL  
0.19  
0.10  
0
M
S
S
0.25 (0.010)  
T
B
A
7
0
7
_
_
_
_
5.80  
0.25  
6.20 0.228 0.244  
0.50 0.010 0.019  
SOLDERING FOOTPRINT*  
7X  
7.04  
14X  
1.52  
1
14X  
0.58  
1.27  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
6
MC74HC86A  
PACKAGE DIMENSIONS  
TSSOP14  
CASE 948G01  
ISSUE B  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T
U
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
S
0.15 (0.006) T  
U
N
0.25 (0.010)  
14  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
DETAIL E  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T  
U
A
V−  
MILLIMETERS  
INCHES  
K1  
DIM MIN  
MAX  
MIN MAX  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
1.20  
0.15 0.002 0.006  
0.75 0.020 0.030  
J J1  
−−− 0.047  
SECTION NN  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
7
MC74HC86A  
PACKAGE DIMENSIONS  
SOEIAJ14  
CASE 96501  
ISSUE A  
NOTES:  
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
ꢀꢁ2. CONTROLLING DIMENSION: MILLIMETER.  
ꢀꢁ3. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD FLASH OR PROTRUSIONS AND ARE  
MEASURED AT THE PARTING LINE. MOLD FLASH  
OR PROTRUSIONS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
L
E
14  
8
Q
1
ꢀꢁ4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
H
E
_
E
M
ꢀꢁ5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
L
7
1
DETAIL P  
Z
D
MILLIMETERS  
INCHES  
MIN  
−−−  
VIEW P  
DIM MIN  
MAX  
MAX  
0.081  
0.008  
0.020  
0.008  
0.413  
0.215  
A
e
A
−−−  
0.05  
0.35  
0.10  
9.90  
5.10  
2.05  
c
A
1
b
c
0.20 0.002  
0.50 0.014  
0.20 0.004  
D
E
e
10.50 0.390  
5.45 0.201  
A
b
1
1.27 BSC  
0.050 BSC  
H
M
7.40  
0.50  
1.10  
8.20 0.291  
0.85 0.020  
1.50 0.043  
0.323  
0.033  
0.059  
0.13 (0.005)  
E
0.10 (0.004)  
0.50  
L
E
M
0
10  
0.90 0.028  
10  
_
0.035  
0.056  
0
_
_
_
Q
1
0.70  
−−−  
Z
1.42  
−−−  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MC74HC86A/D  

相关型号:

MC74HC86AFELG

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC86AFG

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC86AN

Quad 2-Input Exclusive OR Gate
MOTOROLA

MC74HC86AN

Quad 2-Input Exclusive OR Gate
ONSEMI

MC74HC86ANG

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC86A_06

Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC86D

Quad 2-Input Exclusive OR Gate
MOTOROLA

MC74HC86DD

暂无描述
MOTOROLA

MC74HC86DDS

XOR Gate, CMOS, PDSO14
MOTOROLA

MC74HC86DR2

HC/UH SERIES, QUAD 2-INPUT XOR GATE, PDSO14, PLASTIC, SOIC-14
MOTOROLA

MC74HC86N

Quad 2-Input Exclusive OR Gate
MOTOROLA

MC74HC9014DWD

Inverter, CMOS, PDSO20
MOTOROLA