MC74VHC1GT86DTT1 [ONSEMI]

2−Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL−Compatible Inputs; 2输入异或门/ CMOS逻辑电平转换器与LSTTL兼容输入
MC74VHC1GT86DTT1
型号: MC74VHC1GT86DTT1
厂家: ONSEMI    ONSEMI
描述:

2−Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL−Compatible Inputs
2输入异或门/ CMOS逻辑电平转换器与LSTTL兼容输入

转换器 电平转换器 栅极 触发器 逻辑集成电路 石英晶振 光电二极管
文件: 总6页 (文件大小:80K)
中文:  中文翻译
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MC74VHC1GT86  
2−Input Exclusive OR Gate /  
CMOS Logic Level Shifter  
with LSTTL−Compatible Inputs  
The MC74VHC1GT86 is an advanced high speed CMOS 2−input  
Exclusive OR gate fabricated with silicon gate CMOS technology. It  
achieves high speed operation similar to equivalent Bipolar Schottky  
TTL while maintaining CMOS low power dissipation.  
http://onsemi.com  
MARKING  
DIAGRAMS  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output.  
The device input is compatible with TTL−type input thresholds and  
the output has a full 5 V CMOS level output swing. The input protection  
circuitry on this device allows overvoltage tolerance on the input,  
allowing the device to be used as a logic−level translator from 3 V  
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V  
CMOS Logic while operating at the high−voltage power supply.  
The MC74VHC1GT86 input structure provides protection when  
voltages up to 7 V are applied, regardless of the supply voltage. This  
allows the MC74VHC1GT86 to be used to interface 5 V circuits to  
3 V circuits. The output structures also provide protection when  
5
5
1
VM M G  
SC−88A/SOT−353/SC−70  
DF SUFFIX  
G
CASE 419A  
1
5
5
VM M G  
1
TSOP−5/SOT−23/SC−59  
DT SUFFIX  
G
1
CASE 483  
V
CC  
= 0 V. These input and output structures help prevent device  
destruction caused by supply voltage − input/output voltage mismatch,  
battery backup, hot insertion, etc.  
VM = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Features  
(Note: Microdot may be in either location)  
*Date Code orientation and/or position may vary  
depending upon manufacturing location.  
High Speed: t = 4.8 ns (Typ) at V = 5 V  
PD  
CC  
Low Power Dissipation: I = 1 mA (Max) at T = 25°C  
CC  
A
TTL−Compatible Inputs: V = 0.8 V; V = 2 V  
IL  
IH  
CMOS−Compatible Outputs: V > 0.8 V ; V < 0.1 V @Load  
OH  
CC  
OL  
CC  
PIN ASSIGNMENT  
Power Down Protection Provided on Inputs and Outputs  
Balanced Propagation Delays  
Pin and Function Compatible with Other Standard Logic Families  
Chip Complexity: FETs = 83; Equivalent Gates = 16  
Pb−Free Packages are Available  
1
2
3
4
5
IN B  
IN A  
GND  
OUT Y  
V
CC  
FUNCTION TABLE  
5
IN B  
IN A  
GND  
V
CC  
1
2
3
Inputs  
Output  
Y
A
B
L
L
L
H
L
L
H
H
L
OUT Y  
4
H
H
Figure 1. Pinout (Top View)  
H
IN A  
IN B  
= 1  
ORDERING INFORMATION  
OUT Y  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Figure 2. Logic Symbol  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
February, 2007 − Rev. 15  
MC74VHC1GT86/D  
MC74VHC1GT86  
MAXIMUM RATINGS  
Symbol  
Characteristics  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
−0.5 to +7.0  
−0.5 to +7.0  
−0.5 to 7.0  
V
IN  
V
V
OUT  
V
= 0  
CC  
V
High or Low State  
−0.5 to V + 0.5  
CC  
I
Input Diode Current  
−20  
+20  
mA  
mA  
mA  
mA  
mW  
°C/W  
°C  
IK  
I
Output Diode Current  
DC Output Current, per Pin  
V
OUT  
< GND; V  
> V  
OK  
OUT CC  
I
+25  
OUT  
I
DC Supply Current, V and GND  
+50  
CC  
CC  
P
Power dissipation in still air  
Thermal resistance  
SC−88A, TSOP−5  
SC−88A, TSOP−5  
200  
D
q
333  
JA  
T
Lead temperature, 1 mm from case for 10 seconds  
Junction temperature under bias  
Storage temperature  
260  
L
T
+150  
−65 to +150  
°C  
J
T
stg  
°C  
V
ESD  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
> 2000  
> 200  
N/A  
V
I
Latchup Performance  
Above V and Below GND at 125°C (Note 5)  
500  
mA  
Latchup  
CC  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Derating − SC−88A Package: –3 mW/°C from 65° to 125°C  
− TSOP5 Package: −3 mW/°C from 65° to 125°C  
2. Tested to EIA/JESD22−A114−A  
3. Tested to EIA/JESD22−A115−A  
4. Tested to JESD22−C101−A  
5. Tested to EIA/JESD78  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Characteristics  
Min  
3.0  
0.0  
Max  
5.5  
5.5  
5.5  
Unit  
V
V
CC  
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V
IN  
V
V
OUT  
V
= 0  
CC  
0.0  
0.0  
V
High or Low State  
V
CC  
T
Operating Temperature Range  
Input Rise and Fall Time  
−55  
+125  
°C  
A
t , t  
r
V
CC  
V
CC  
= 3.3 V 0.3 V  
= 5.0 V 0.5 V  
0
0
100  
20  
ns/V  
f
Device Junction Temperature versus  
Time to 0.1% Bond Failures  
Junction  
Temperature °C  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
117.8  
47.9  
80  
90  
100  
110  
120  
130  
140  
20.4  
1
9.4  
37,000  
4.2  
1
10  
100  
1000  
17,800  
2.0  
TIME, YEARS  
8,900  
1.0  
Figure 3. Failure Rate vs. Time Junction Temperature  
http://onsemi.com  
2
 
MC74VHC1GT86  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
T
A
= 25°C  
T
A
85°C  
−55 T 125°C  
A
Symbol  
Parameter  
Test Conditions  
(V)  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Unit  
V
IH  
Minimum High−Level  
Input Voltage  
3.0  
4.5  
5.5  
1.4  
2.0  
2.0  
1.4  
2.0  
2.0  
1.4  
2.0  
2.0  
V
V
IL  
Maximum Low−Level  
Input Voltage  
3.0  
4.5  
5.5  
0.53  
0.8  
0.8  
0.53  
0.8  
0.8  
0.53  
0.8  
0.8  
V
V
OH  
Minimum High−Level  
Output Voltage  
V
= V or V  
= −50 mA  
3.0  
4.5  
2.9  
4.4  
3.0  
4.5  
2.9  
4.4  
2.9  
4.4  
V
V
IN  
IH  
IL  
I
OH  
V
IN  
= V or V  
IH IL  
V
= V or V  
IN  
OH  
OH  
IH  
IL  
I
I
= −4 mA  
= −8 mA  
3.0  
4.5  
2.58  
3.94  
2.48  
3.80  
2.34  
3.66  
V
OL  
Maximum Low−Level  
Output Voltage  
V
= V or V  
= 50 mA  
3.0  
4.5  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
V
IN  
IH  
IL  
I
OL  
V
IN  
= V or V  
IH IL  
V
= V or V  
IN  
OL  
OL  
IH  
IL  
I
I
= 4 mA  
= 8 mA  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
I
Maximum Input  
Leakage Current  
V
= 5.5 V or GND  
0 to  
5.5  
0.1  
1.0  
1.0  
mA  
mA  
mA  
mA  
IN  
IN  
I
Maximum Quiescent  
Supply Current  
V
IN  
= V or GND  
5.5  
5.5  
0.0  
1.0  
20  
40  
CC  
CC  
I
Quiescent Supply  
Current  
Input: V = 3.4 V  
1.35  
0.5  
1.50  
5.0  
1.65  
10  
CCT  
IN  
I
Output Leakage  
Current  
V
OUT  
= 5.5 V  
OPD  
AC ELECTRICAL CHARACTERISTICS C  
= 50 pF, Input t = t = 3.0 ns  
r f  
load  
T
A
= 25°C  
T
A
85°C  
−55 T 125°C  
A
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
= 3.3 0.3 VC = 15 pF  
Unit  
t
,
Maximum Propagation  
Delay, Input A or B to Y  
V
V
5.0  
6.2  
11.0  
14.5  
13.0  
16.5  
15.5  
19.5  
ns  
PLH  
t
CC  
L
C = 50 pF  
L
PHL  
= 5.0 0.5 VC = 15 pF  
3.1  
4.2  
6.8  
8.8  
8.0  
10.0  
10.0  
12.0  
CC  
L
C = 50 pF  
L
C
Maximum Input  
Capacitance  
5.5  
10  
10  
10  
pF  
pF  
IN  
Typical @ 25°C, V = 5.0 V  
CC  
C
Power Dissipation Capacitance (Note 6)  
11  
PD  
6. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
power consumption; P = C V  
) = C V f + I . C is used to determine the no−load dynamic  
CC(OPR  
PD CC in CC PD  
2
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
3
 
MC74VHC1GT86  
3.0 V  
GND  
A or B 50%  
t
t
PHL  
PLH  
V
V
OH  
Y
50%  
OL  
Figure 4. Switching Waveforms  
TEST POINT  
OUTPUT  
DEVICE  
UNDER  
TEST  
C *  
L
*Includes all probe and jig capacitance  
Figure 5. Test Circuit  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74VHC1GT86DFT1  
M74VHC1GT86DFT1G  
SC−88A / SOT−353 / SC−70  
SC−88A / SOT−353 / SC−70  
(Pb−Free)  
MC74VHC1GT86DFT2  
M74VHC1GT86DFT2G  
SC−88A / SOT−353 / SC−70  
3000 / Tape & Reel  
SC−88A / SOT−353 / SC−70  
(Pb−Free)  
MC74VHC1GT86DTT1  
M74VHC1GT86DTT1G  
TSOP−5 / SOT−23 / SC−59  
TSOP−5 / SOT−23 / SC−59  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
4
MC74VHC1GT86  
PACKAGE DIMENSIONS  
SC−88A, SOT−353, SC−70  
CASE 419A−02  
ISSUE J  
A
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. 419A−01 OBSOLETE. NEW STANDARD  
419A−02.  
G
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5
4
3
−B−  
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
1.35  
1.10  
0.30  
1
2
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
0.026 BSC  
0.65 BSC  
M
M
D 5 PL  
0.2 (0.008)  
B
−−−  
0.004  
0.004  
0.004  
0.010  
0.012  
−−−  
0.10  
0.10  
0.10  
0.25  
0.30  
K
N
S
N
0.008 REF  
0.20 REF  
0.079  
0.087  
2.00  
2.20  
J
C
K
H
SOLDERING FOOTPRINT*  
0.50  
0.0197  
0.65  
0.025  
0.65  
0.025  
0.40  
0.0157  
mm  
inches  
ǒ
Ǔ
1.9  
0.0748  
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
MC74VHC1GT86  
PACKAGE DIMENSIONS  
TSOP−5  
CASE 483−02  
ISSUE G  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
NOTE 5  
5X  
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5. OPTIONAL CONSTRUCTION: AN  
ADDITIONAL TRIMMED LEAD IS ALLOWED  
IN THIS LOCATION. TRIMMED LEAD NOT TO  
EXTEND MORE THAN 0.2 FROM BODY.  
0.20 C A B  
2X  
2X  
0.10  
T
T
M
5
4
3
0.20  
B
S
1
2
K
L
DETAIL Z  
G
A
MILLIMETERS  
DIM  
A
B
MIN  
3.00 BSC  
1.50 BSC  
MAX  
DETAIL Z  
J
C
D
G
H
J
K
L
M
S
0.90  
0.25  
0.95 BSC  
1.10  
0.50  
C
SEATING  
PLANE  
0.05  
H
0.01  
0.10  
0.20  
1.25  
0
0.10  
0.26  
0.60  
1.55  
T
10  
3.00  
_
_
2.50  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
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MC74VHC1GT86/D  

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