MC74VHCT139AMG [ONSEMI]

Dual 2−to−4 Decoder/ Demultiplexer; 双路2至4解码器/多路解复用器
MC74VHCT139AMG
型号: MC74VHCT139AMG
厂家: ONSEMI    ONSEMI
描述:

Dual 2−to−4 Decoder/ Demultiplexer
双路2至4解码器/多路解复用器

解码器 驱动器 解复用器 逻辑集成电路 光电二极管
文件: 总7页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74VHCT139A  
Dual 2−to−4 Decoder/  
Demultiplexer  
The MC74VHCT139A is an advanced high speed CMOS 2−to−4  
decoder/demultiplexer fabricated with silicon gate CMOS technology.  
It achieves high speed operation similar to equivalent Bipolar  
Schottky TTL devices while maintaining CMOS low power  
dissipation.  
When the device is enabled (E = low), it can be used for gating or as  
a data input for demultiplexing operations. When the enable input is  
held high, all four outputs are fixed high, independent of other inputs.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output.  
The device output is compatible with TTL−type input thresholds  
and the output has a full 5.0 V CMOS level output swing. The input  
protection circuitry on this device allows overvoltage tolerance on the  
input, allowing the device to be used as a logic−level translator from  
3.0 V CMOS logic to 5.0 V CMOS logic, or from 1.8 V CMOS logic  
to 3.0 V CMOS logic while operating at the high−voltage power  
supply  
http://onsemi.com  
MARKING  
DIAGRAMS  
16  
1
SOIC−16  
D SUFFIX  
CASE 751B  
VHCT139AG  
AWLYWW  
1
16  
VHCT  
139A  
ALYWG  
G
TSSOP−16  
DT SUFFIX  
CASE 948F  
The MC74VHCT139A input structure provides protection when  
voltages up to 7.0 V are applied, regardless of the supply voltage. This  
allows the MC74VHCT139A to be used to interface 5.0 V circuits to  
3.0 V circuits. The output structures also provide protection when  
1
1
16  
V
CC  
= 0 V. These input and output structures help prevent device  
SOEIAJ−16  
M SUFFIX  
CASE 966  
destruction caused by supply voltage−input/output voltage mismatch,  
battery backup, hot insertion, etc.  
74VHCT139  
ALYWG  
1
1
Features  
High Speed: t = 5.0 ns (Typ) at V = 5.0 V  
PD  
CC  
Low Power Dissipation: I = 4 mΑ (Max) at T = 25°C  
CC  
A
A
WL, L  
Y
= Assembly Location  
= Wafer Lot  
= Year  
TTL−Compatible Inputs: V = 0.8 V; V = 2.0 V  
IL  
IH  
Power Down Protection Provided on Inputs and Outputs  
Balanced Propagation Delays  
WW, W = Work Week  
G or G  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Designed for 2.0 V to 5.5 V Operating Range  
Low Noise: V  
= 0.8 V (Max)  
OLP  
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
FUNCTION TABLE  
Inputs  
A1 A0  
Outputs  
ESD Performance:  
E
Y0 Y1 Y2 Y3  
Human Body Model > 2000 V;  
Machine Model > 200 V  
H
L
L
L
L
X
L
L
H
H
X
L
H
L
H
L
H
H
H
H
H
L
H
H
H
H
H
L
H
H
H
H
L
Chip Complexity: 100 FETs or 25 Equivalent Gates  
Pb−Free Packages are Available*  
H
H
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MC74VHCT139A/D  
MC74VHCT139A  
2
4
5
6
7
A0a  
A1a  
Y0a  
Y1a  
Y2a  
Y3a  
ADDRESS  
INPUTS  
3
ACTIVE−LOW  
OUTPUTS  
Ea  
1
2
16  
15  
V
CC  
A0a  
Eb  
3
4
14  
13  
A1a  
Y0a  
Y1a  
Y2a  
A0b  
A1b  
Y0b  
1
Ea  
5
6
7
8
12  
11  
10  
9
14  
13  
12  
11  
10  
9
Y1b  
Y2b  
Y3b  
ADDRESS  
INPUTS  
A0b  
A1b  
Y0b  
Y1b  
Y2b  
Y3b  
Y3a  
ACTIVE−LOW  
OUTPUTS  
GND  
Figure 1. Pin Assignment  
15  
Eb  
Figure 2. Logic Diagram  
En  
A0  
Y0  
Y1  
Y2  
Y3  
A1  
Figure 3. Expanded Logic Diagram  
(1/2 of Device)  
X/Y  
DMUX  
3
2
1
3
2
1
4
5
4
5
A1a  
A0a  
Ea  
Y0a A1a  
Y1a A0a  
Y0a  
Y1a  
Y2a  
Y3a  
Y0b  
Y1b  
Y2b  
Y3b  
1
2
0
1
2
3
0
1
0
1
2
3
0
3
G
6
7
6
7
Y2a  
Y3a  
Y0b  
Ea  
EN  
INPUT  
12  
11  
10  
9
12  
11  
10  
9
13  
14  
15  
13  
14  
15  
A1b  
A0b  
Eb  
Y1b A1b  
A0b  
Eb  
Y2b  
Y3b  
Figure 5. IEC Logic Diagram  
Figure 4. Input Equivalent Circuit  
http://onsemi.com  
2
MC74VHCT139A  
MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Value  
Unit  
V
V
Positive DC Supply Voltage  
Digital Input Voltage  
−0.5 to +7.0  
−0.5 to +7.0  
−0.5 to +7.0  
CC  
V
V
IN  
V
DC Output Voltage  
Output in 3−State  
V
OUT  
High or Low State  
−0.5 to V +0.5  
CC  
I
Input Diode Current  
−20  
$20  
$25  
$75  
mA  
mA  
mA  
mA  
mW  
IK  
I
Output Diode Current  
DC Output Current, per Pin  
OK  
I
OUT  
I
DC Supply Current, V and GND Pins  
CC  
CC  
P
Power Dissipation in Still Air  
SOIC Package  
TSSOP  
200  
180  
D
T
V
Storage Temperature Range  
ESD Withstand Voltage  
−65 to +150  
°C  
STG  
Human Body Model (Note 2)  
Machine Model (Note 3)  
>2000  
>200  
V
ESD  
Charged Device Model (Note 4)  
>2000  
I
Latchup Performance  
Above V and Below GND at 125°C (Note 5)  
$300  
143  
164  
mA  
LATCHUP  
CC  
q
Thermal Resistance, Junction−to−Ambient  
SOIC Package  
TSSOP  
°C/W  
JA  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the  
Recommended Operating Conditions.  
2. Tested to EIA/JESD22−A114−A  
3. Tested to EIA/JESD22−A115−A  
4. Tested to JESD22−C101−A  
5. Tested to EIA/JESD78  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Characteristics  
Min  
4.5  
0
Max  
5.5  
5.5  
5.5  
Unit  
V
V
DC Supply Voltage  
DC Input Voltage  
CC  
V
V
IN  
V
DC Output Voltage Output in 3−State  
High or Low State  
0
0
V
OUT  
V
CC  
T
Operating Temperature Range, all Package Types  
−55  
0
125  
20  
°C  
A
t , t  
r
Input Rise or Fall Time  
V = 5.0 V + 0.5 V  
CC  
ns/V  
f
DEVICE JUNCTION TEMPERATURE VERSUS TIME  
TO 0.1% BOND FAILURES  
Junction  
Temperature °C  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Time, Hours  
Time, Years  
80  
1,032,200  
419,300  
178,700  
79,600  
37,000  
17,800  
8,900  
117.8  
47.9  
20.4  
9.4  
90  
100  
110  
120  
130  
140  
1
4.2  
1
10  
100  
1000  
2.0  
TIME, YEARS  
1.0  
Figure 6. Failure Rate vs. Time Junction Temperature  
http://onsemi.com  
3
 
MC74VHCT139A  
DC CHARACTERISTICS (Voltages Referenced to GND)  
V
T
A
= 25°C  
T
A
85°C  
T = − 55 to  
A
CC  
125°C  
Symbol  
Parameter  
Condition  
(V)  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Unit  
V
Minimum High−Level Input  
Voltage  
4.5 to 5.5  
2
2
2
V
IH  
V
Maximum Low−Level Input  
Voltage  
4.5 to 5.5  
0.8  
0.8  
0.8  
V
V
IL  
V
= V or V  
= −50 mA  
V
Maximum High−Level  
Output Voltage  
IN  
IH  
IL  
IL  
IL  
IL  
OH  
I
4.5  
4.5  
4.5  
4.4  
4.5  
0
4.4  
3.8  
4.4  
OH  
V
= V or V  
IN  
IH  
I
= −8 mA  
3.94  
3.66  
OH  
V
= V or V  
V
Maximum Low−Level  
Output Voltage  
V
IN  
IH  
OL  
I
= 50 mA  
0.1  
0.1  
0.1  
OL  
V
= V or V  
IN  
IH  
I
= 8 mA  
4.5  
0 to 5.5  
5.5  
0.36  
0.1  
0.44  
1.0  
0.52  
1.0  
OH  
I
Input Leakage Current  
V
V
= 5.5 V or GND  
mA  
mA  
IN  
IN  
IN  
I
Maximum Quiescent  
Supply Current  
= V or GND  
4.0  
40.0  
40.0  
CC  
CC  
I
Additional Quiescent  
Supply Current (per Pin)  
Any one input:  
= 3.4 V  
All other inputs:  
5.5  
1.35  
0.5  
1.5  
5
1.5  
5
mA  
CCT  
V
IN  
V
= V or GND  
IN  
CC  
I
Output Leakage Current  
V
= 5.5 V  
0
mA  
OPD  
OUT  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)  
r
f
T
A
= − 55 to  
125°C  
T
A
= 25°C  
T 85°C  
A
Symbol  
Parameter  
Test Conditions  
= 3.3 0.3 V C = 15 pF  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Unit  
t
,
Maximum Propagation  
Delay, A to Y  
V
V
V
V
7.2  
9.7  
11.0  
14.5  
1.0  
1.0  
13.0  
16.5  
1.0  
1.0  
13.0  
16.5  
ns  
PLH  
CC  
CC  
CC  
CC  
L
t
C = 50 pF  
L
PHL  
= 5.0 0.5 V C = 15 pF  
5.0  
6.5  
7.2  
9.2  
1.0  
1.0  
8.5  
10.5  
1.0  
1.0  
8.5  
10.5  
L
C = 50 pF  
L
t
,
Maximum Propagation  
Delay, E to Y  
= 3.3 0.3 V C = 15 pF  
6.4  
8.9  
9.2  
12.7  
1.0  
1.0  
11.0  
14.5  
1.0  
1.0  
11.0  
14.5  
ns  
PLH  
L
t
C = 50 pF  
L
PHL  
= 5.0 0.5 V C = 15 pF  
4.4  
5.9  
6.3  
8.3  
1.0  
1.0  
7.5  
9.5  
1.0  
1.0  
7.5  
9.5  
L
C = 50 pF  
L
C
Maximum Input  
Capacitance  
4
10  
10  
10  
pF  
pF  
IN  
Typical @ 25°C, V = 5.0V  
CC  
26  
C
PD  
Power Dissipation Capacitance (Note 6)  
6. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C V f + I /2 (per decoder). C is used to determine the  
CC(OPR  
PD CC in CC PD  
2
no−load dynamic power consumption; P = C V  
f + I V  
in  
.
CC  
D
PD  
CC  
CC  
http://onsemi.com  
4
 
MC74VHCT139A  
3.0 V  
GND  
3.0 V  
GND  
A
Y
E
1.5 V  
1.5 V  
t
PHL  
t
t
PLH  
t
PHL  
PLH  
V
V
OH  
OH  
1.5 V  
1.5 V  
Y
V
V
OL  
OL  
Figure 7. Switching Waveform  
Figure 8. Switching Waveform  
TEST POINT  
OUTPUT  
DEVICE  
UNDER  
TEST  
C *  
L
*Includes all probe and jig capacitance  
Figure 9. Test Circuit  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74VHCT139AD  
MC74VHCT139ADG  
SOIC−16  
48 Units / Rail  
48 Units / Rail  
SOIC−16  
(Pb−Free)  
MC74VHCT139ADR2  
MC74VHCT139ADR2G  
SOIC−16  
2500 Tape & Reel  
2500 Tape & Reel  
SOIC−16  
(Pb−Free)  
MC74VHCT139ADT  
MC74VHCT139ADTG  
MC74VHCT139ADTR2  
MC74VHCT139ADTRG  
MC74VHCT139AM  
TSSOP−16*  
TSSOP−16*  
TSSOP−16*  
TSSOP−16*  
SOEIAJ−16  
96 Units / Rail  
96 Units / Rail  
2500 Tape & Reel  
2500 Tape & Reel  
50 Units / Rail  
MC74VHCT139AMG  
SOEIAJ−16  
(Pb−Free)  
50 Units / Rail  
MC74VHCT139AMEL  
MC74VHCT139AMELG  
SOEIAJ−16  
2000 Tape & Reel  
2000 Tape & Reel  
SOEIAJ−16  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
http://onsemi.com  
5
MC74VHCT139A  
PACKAGE DIMENSIONS  
SOIC−16  
D SUFFIX  
CASE 751B−05  
ISSUE J  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
−A−  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
16  
9
8
−B−  
P 8 PL  
M
S
B
0.25 (0.010)  
1
MILLIMETERS  
INCHES  
MIN  
G
DIM MIN  
MAX  
10.00  
4.00  
1.75  
0.49  
1.25  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
0.386  
0.150  
0.054  
0.014  
0.016  
F
R X 45  
K
_
G
J
1.27 BSC  
0.050 BSC  
C
0.19  
0.10  
0
0.25  
0.25  
7
0.008  
0.004  
0
0.009  
0.009  
7
−T−  
SEATING  
PLANE  
K
M
P
R
J
M
_
_
_
_
5.80  
0.25  
6.20  
0.50  
0.229  
0.010  
0.244  
0.019  
D
16 PL  
M
S
S
0.25 (0.010)  
T B  
A
TSSOP−16  
DT SUFFIX  
CASE 948F−01  
ISSUE A  
NOTES:  
16X KREF  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
M
S
S
V
0.10 (0.004)  
T U  
S
0.15 (0.006) T U  
K
K1  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
16  
9
2X L/2  
J1  
B
−U−  
SECTION N−N  
L
J
PIN 1  
IDENT.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
8
1
N
0.25 (0.010)  
S
0.15 (0.006) T U  
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
M
−V−  
A
B
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
N
C
1.20  
−−− 0.047  
F
D
F
0.15 0.002 0.006  
0.75 0.020 0.030  
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
DETAIL E  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007 0.011  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
−W−  
C
6.40 BSC  
0.252 BSC  
M
0
8
0
8
_
_
_
_
0.10 (0.004)  
H
DETAIL E  
SEATING  
−T−  
D
PLANE  
G
http://onsemi.com  
6
MC74VHCT139A  
PACKAGE DIMENSIONS  
SOEIAJ−16  
M SUFFIX  
CASE 966−01  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
16X KREF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
S
0.15 (0.006) T U  
K
K1  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
16  
9
2X L/2  
J1  
B
−U−  
SECTION N−N  
L
J
PIN 1  
IDENT.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
8
1
N
0.25 (0.010)  
S
0.15 (0.006) T U  
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
M
−V−  
A
B
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
N
C
1.20  
−−− 0.047  
F
D
F
0.15 0.002 0.006  
0.75 0.020 0.030  
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
DETAIL E  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007 0.011  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
−W−  
C
6.40 BSC  
0.252 BSC  
M
0
8
0
8
_
_
_
_
0.10 (0.004)  
H
DETAIL E  
SEATING  
PLANE  
−T−  
D
G
ON Semiconductor and  
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MC74VHCT139A/D  

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