MCH3427-TL-E [ONSEMI]
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4A I(D),SOT-323VAR;
| 型号： | MCH3427-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4A I(D),SOT-323VAR |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7746
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH3427
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
20
±12
4
DSS
GSS
V
V
I
D
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
16
1
A
DP
P
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
20
V
µA
µA
V
(BR)DSS
I
V
V
V
V
=20V, V =0
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0
DS
±10
V
(off)
GS
=10V, I =1mA
0.4
2.9
1.3
D
Forward Transfer Admittance
yfs
=10V, I =2A
4.9
40
54
72
400
92
85
11
S
D
R
R
R
(on)1
I
I
I
=2A, V =4V
GS
52
76
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
(on)2
(on)3
=1A, V =2.5V
GS
=0.5A, V =1.8V
GS
110
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
Coss
Crss
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
75
54
60
ns
r
Turn-OFF Delay Time
Fall Time
t (off)
d
ns
t
ns
f
Marking : ZC
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Publication Order Number:
www.onsemi.com
MCH3427/D
MCH3427
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
V
V
V
=10V, V =4V, I =4A
6
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
=10V, V =4V, I =4A
0.8
2.2
GS
D
=10V, V =4V, I =4A
GS
D
V
I =4A, V =0
S GS
0.87
1.2
SD
Package Dimensions
unit : mm
Switching Time Test Circuit
2167A
V =10V
DD
V
IN
0.3
3
0.15
4V
0V
I
=2A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
2
1
0.65
G
2.0
(Bottom view)
3
1 : Gate
2 : Source
3 : Drain
MCH3427
P. G
50Ω
S
1
2
(Top view)
SANYO : MCPH3
I
-- V
I
-- V
GS
D
DS
D
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
4
3
2
V
DS
=10V
1
0
0.4
0
V
=1.0V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DS
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT07049
IT07048
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
100
90
80
70
60
50
40
100
90
80
70
60
50
40
30
Ta=25°C
I =0.5A
D
1.0A
2.0A
30
20
20
10
0
2
4
6
8
10
IT07050
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT07051
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
GS
-- V
Rev.0 I Page 2 of 4 I www.onsemi.com
MCH3427
yfs -- I
I
-- V
SD
D
F
10
10
V =0
GS
V =10V
DS
7
5
7
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
3
2
3
2
0.01
0.3
0.01
0.001
2
3
5 7
0.01
2
3
5 7
2
3
5 7
2
3
5 7
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
Drain Current, I -- A
IT07052
Diode Forward Voltage, V
-- V
SD
IT07053
D
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
1000
1000
V
V
=10V
=4V
f=1MHz
DD
GS
7
5
7
5
3
2
3
2
100
t
f
7
5
3
2
100
t (on)
d
7
5
10
7
5
3
3
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
2
4
6
8
10
12
14
16
18
20
0.1
1.0
10
IT07054
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT07055
D
DS
V
-- Qg
A S O
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
I
=16A
<10µs
V
I =4A
D
=10V
DP
DS
10
7
5
I
=4A
D
3
2
1.0
7
5
Operation in this
3
2
area is limited by R (on).
DS
0.1
7
5
Ta=25°C
3
2
0.5
0
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0
1
2
3
4
5
6
7
0.1
1.0
10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
IT07056
IT07057
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT07058
Rev.0 I Page 3 of 4 I www.onsemi.com
MCH3427
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protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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MCH3427/D
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