MGB15N35CL [ONSEMI]
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK; 点火IGBT 15安培， 350伏特N沟道TO- 220和D2PAK
| 型号： | MGB15N35CL |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| 文件： | 总10页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
N−Channel TO−220 and D2PAK
http://onsemi.com
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
System Applications
15 AMPERES
350 VOLTS (Clamped)
CE(on) @ 10 A = 1.8 V Max
V
N−Channel
• High Pulsed Current Capability up to 50 A
• Gate−Emitter ESD Protection
C
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
R
G
G
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
R
GE
4
E
• Low Saturation Voltage
4
• Optional Gate Resistor (R )
G
1
2
MAXIMUM RATINGS (−55°C ≤ T ≤ 175°C unless otherwise noted)
J
3
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol Value
Unit
2
D PAK
CASE 418B
STYLE 4
TO−220AB
CASE 221A
STYLE 9
V
V
380
380
22
V
DC
V
DC
V
DC
CES
CER
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3
V
GE
Collector Current−Continuous
I
C
15
50
A
DC
A
AC
4
4
@ T = 25°C − Pulsed
C
Collector
Collector
ESD (Human Body Model)
ESD
kV
R = 1500 Ω, C = 100 pF
8.0
G15N35CL
YWW
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
Total Power Dissipation @ T = 25°C
P
D
150
1.0
Watts
W/°C
C
G15N35CL
YWW
Derate above 25°C
1
Gate
3
Operating and Storage Temperature Range
T , T
−55 to
175
°C
J
stg
Emitter
2
1
3
Collector
Gate
Emitter
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE
2
CHARACTERISTICS (−55°C ≤ T ≤ 175°C)
J
G15N35CL = Device Code
Collector
Y
= Year
Characteristic
Symbol
Value
Unit
WW
= Work Week
Single Pulse Collector−to−Emitter Avalanche
E
AS
mJ
Energy
ORDERING INFORMATION
V
CC
= 50 V, V = 5.0 V, Pk I = 17.4 A, L
300
200
GE
L
Device
Package
TO−220
D2PAK
Shipping
= 2.0 mH, Starting T = 25°C
J
V
CC
= 50 V, V = 5.0 V, Pk I = 14.2 A, L
GE L
MGP15N35CL
50 Units/Rail
= 2.0 mH, Starting T = 150°C
J
MGB15N35CLT4
800 Tape & Reel
Reverse Avalanche Energy
E
AS(R)
mJ
V
= 100 V, V = 20 V, L = 3.0 mH,
1000
CC
GE
Preferred devices are recommended choices for future use
and best overall value.
Pk I = 25.8 A, Starting T = 25°C
L
J
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 5
MGP15N35CL/D
MGP15N35CL, MGB15N35CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.0
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θ
JC
R
θ
JA
R
θ
JA
L
°C/W
TO−220
62.5
50
2
D PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
C
= 2.0 mA
= 10 mA
T = −40°C to
320
330
350
360
380
380
V
DC
CES
J
150°C
I
C
T = −40°C to
J
150°C
T = 25°C
−
−
1.5
10
20
40*
1.5
1.0
15*
0.5
50
Zero Gate Voltage Collector Current
I
μA
DC
J
CES
V
V
= 300 V,
CE
T = 150°C
J
= 0 V
GE
T = −40°C
J
−
0.7
0.35
8.0
0.05
33
T = 25°C
J
−
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
I
mA
ECS
V
= −24 V
CE
T = 150°C
J
−
T = −40°C
J
−
T = 25°C
J
25
25
25
17
B
V
V
VCES(R)
DC
I
C
= −75 mA
T = 150°C
J
36
50
T = −40°C
J
30
50
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
BV
I
G
= 5.0 mA
T = −40°C to
20
22
GES
J
DC
150°C
I
V
= 10 V
T = −40°C to
384
−
600
70
1000
−
μA
DC
GES
GE
J
150°C
R
−
−
T = −40°C to
Ω
G
J
150°C
R
T = −40°C to
J
10
16
26
Ω
k
GE
150°C
ON CHARACTERISTICS (Note 2)
T = 25°C
1.4
0.75
1.6
−
1.7
1.1
1.9
4.4
2.0
1.4
2.1*
−
Gate Threshold Voltage
V
V
DC
J
GE(th)
I
= 1.0 mA,
C
V
T = 150°C
J
= V
GE
CE
T = −40°C
J
Threshold Temperature Coefficient
(Negative)
−
−
−
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
MGP15N35CL, MGB15N35CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol
ON CHARACTERISTICS (continued) (Note 3)
Test Conditions
Temperature
Min
Typ
Max
Unit
T = 25°C
1.0
0.9
1.1
1.3
1.2
1.3
1.6
1.7
1.6
1.9
2.1
1.85
2.1
2.5
2.0
−
1.3
1.2
1.4
1.6
1.5
1.6
1.95
2.0
1.9
2.2
2.4
2.15
2.5
2.9
2.4
1.5
15
1.6
1.5
Collector−to−Emitter On−Voltage
V
V
J
CE(on)
DC
I
V
= 6.0 A,
C
T = 150°C
J
= 4.0 V
GE
T = −40°C
J
1.7*
1.9
T = 25°C
J
I
V
= 10 A,
C
T = 150°C
J
1.8
= 4.0 V
GE
T = −40°C
J
1.9*
2.25
2.3*
2.2
T = 25°C
J
I
V
= 15 A,
C
T = 150°C
J
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
2.5
I
V
= 20 A,
C
T = 150°C
J
2.7*
2.45
2.9
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
I
V
= 25 A,
C
T = 150°C
J
3.3*
2.8
= 4.0 V
GE
T = −40°C
J
Collector−to−Emitter On−Voltage
V
CE(on)
I
= 10 A, V = 4.5 V
T = 150°C
J
1.8
V
DC
C
GE
Forward Transconductance
gfs
V
= 5.0 V, I = 6.0 A
T = −40°C to
J
8.0
25
Mhos
CE
C
150°C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1000 1300
pF
ISS
V
CC
= 25 V, V = 0 V
f = 1.0 MHz
T = −40°C to
GE
J
Output Capacitance
C
OSS
C
RSS
100
5.0
130
8.0
150°C
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Turn−Off Delay Time (Inductive)
T = 25°C
−
−
−
−
−
−
−
−
−
−
−
−
4.0
4.5
7.0
10
10
10
t
V
= 300 V, I = 6.5 A
= 1.0 kΩ, L = 300 μH
μSec
μSec
μSec
J
d(off)
CC
C
R
G
T = 150°C
J
T = 25°C
J
10
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, L = 300 μH
G
T = 150°C
J
15*
10
T = 25°C
J
4.0
4.5
13
t
t
V
CC
= 300 V, I = 6.5 A
d(off)
C
R
= 1.0 kΩ, R = 46 Ω,
G
L
T = 150°C
J
10
T = 25°C
J
20
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, R = 46 Ω,
G
G
G
L
T = 150°C
J
16
20
T = 25°C
J
1.0
1.0
4.5
5.0
1.5
1.5
6.0
6.0
V
R
= 10 V, I = 6.5 A
d(on)
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
T = 25°C
J
t
r
V
R
= 10 V, I = 6.5 A
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
MGP15N35CL, MGB15N35CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
30
20
10
0
60
V
= 10.0 V
V
= 10.0 V
GE
GE
V
V
= 4.5 V
= 4.0 V
V
= 4.5 V
GE
GE
50
40
30
20
10
0
V
= 5.0 V
V
= 5.0 V
GE
GE
V
V
= 4.0 V
= 3.5 V
GE
GE
T = 25°C
T = 150°C
J
J
GE
V
GE
V
GE
V
GE
= 3.5 V
= 3.0 V
= 2.5 V
V
V
= 3.0 V
= 2.5 V
GE
GE
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
4.0
3.5
V
= 5.0 V
GE
25
20
15
10
V
= 10 V
CE
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 25 A
C
I
C
= 20 A
T = 150°C
J
T = 25°C
I
I
= 15 A
= 10 A
25
J
C
I
= 5 A
100
C
T = −40°C
5
0
J
C
0.5
V
1
1.5
2
2.5
3
3.5
4
4.5
5
−50
−25
0
50
75
125 150
, GATE TO EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
GE
Figure 3. Transfer Characteristics
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
10000
1000
100
2.5
Mean + 4 σ
I
C
= 1 mA
Mean
C
iss
2.0
1.5
1.0
C
oss
Mean − 4 σ
10
C
rss
0.5
0.0
1
20
40 60 80 100 120 140 160 180 200
−50
−25
0
25
50
75
100
125 150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage vs. Temperature
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4
MGP15N35CL, MGB15N35CL
30
25
20
15
10
5
30
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
CC
25
20
15
10
5
GE
GE
G
G
L = 2.0 mH
T = 25°C
L = 3.0 mH
L = 6.0 mH
T = 150°C
0
0
0
2
4
6
8
10
−50 −25
0
25
50
75
100 125 150 175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
30
25
20
15
10
5
30
25
20
15
10
5
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
GE
T = 25°C
L = 2.0 mH
GE
G
G
L = 3.0 mH
L = 6.0 mH
T = 150°C
0
0
0
2
4
6
8
10
−50 −25
0
25
50
75
100 125 150 175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
12
10
14
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 Ω
CC
t
f
GE
G
t
f
I
C
= 10 A
V
V
R
= 300 V
= 5.0 V
= 1000 Ω
CC
8
6
4
2
0
L = 300 μH
GE
G
t
t
d(off)
d(off)
T = 150°C
J
6
L = 300 μH
4
2
0
−50
−25
0
25
50
75
100
125 150
0
2
4
6
8
10
12
14
16
T , CASE TEMPERATURE (°C)
C
I
C,
COLLECTOR CURRENT (AMPS)
Figure 11. Switching Speed vs. Case
Temperature
Figure 12. Switching Speed vs. Collector
Current
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5
MGP15N35CL, MGB15N35CL
14
12
10
8
14
V
V
= 300 V
= 5.0 V
CC
GE
12
10
8
t
f
T = 25°C
J
I
C
= 10 A
L = 300 μH
V
V
= 300 V
= 5.0 V
CC
GE
t
f
T = 150°C
J
I
C
= 10 A
6
6
L = 300 μH
t
d(off)
t
d(off)
4
4
2
2
0
0
250
500
750
1000
250
500
750
1000
R , EXTERNAL GATE RESISTANCE (Ω)
G
R , EXTERNAL GATE RESISTANCE (Ω)
G
Figure 13. Switching Speed vs. External Gate
Resistance
Figure 14. Switching Speed vs. External Gate
Resistance
10
Duty Cycle = 0.5
0.2
1
0.1
0.05
0.02
0.01
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT T
1
t
1
Single Pulse
t
2
T
J(pk)
− T = P
R
(t)
JA
θ
A
(pk)
R
≅ R(t) for t ≤ 0.2 s
θ
JC
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t,TIME (S)
Figure 15. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 16)
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6
MGP15N35CL, MGB15N35CL
1.5″
4″
4″
0.125″
4″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
100
10
100
DC
DC
100 μs
10
100 μs
1 ms
10 ms
1
1
0.1
1 ms
100 ms
10 ms
100 ms
100
0.1
0.01
0.01
1
10
100
1000
1
10
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Single Pulse Safe Operating Area
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
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MGP15N35CL, MGB15N35CL
100
10
100
t = 1 ms, D = 0.05
t = 1 ms, D = 0.05
1
1
DC
DC
t = 2 ms, D = 0.10
1
t = 2 ms, D = 0.10
1
10
1
t = 3 ms, D = 0.30
1
t = 3 ms, D = 0.30
1
1
P
(pk)
P
(pk)
t
1
t
1
0.1
0.1
t
2
t
2
DUTY CYCLE, D = t /t
DUTY CYCLE, D = t /t
1
2
1
2
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 19. Pulse Train Safe Operating Area
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
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MGP15N35CL, MGB15N35CL
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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9
MGP15N35CL, MGB15N35CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−03
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
S
1
2
3
−T−
SEATING
PLANE
K
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
0.625
0.055
2.03
0.46
2.79
0.64
J
G
K
S
V
2.29
14.60
1.14
2.79
15.88
1.40
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and
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MGP15N35CL/D
相关型号：
MGB15N35CLT4G
TRANSISTOR 15 A, 380 V, N-CHANNEL IGBT, CASE 418B-03, D2PAK-3, Insulated Gate BIP Transistor
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