MJ11016G [ONSEMI]
High-Current Complementary Silicon Transistors; 大电流互补硅晶体管
| 型号： | MJ11016G |
| 厂家： | 
ONSEMI |
| 描述： | High-Current Complementary Silicon Transistors |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current
Complementary Silicon
Transistors
http://onsemi.com
. . . for use as output devices in complementary general purpose
amplifier applications.
30 AMPERE DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 − 120 VOLTS, 200 WATTS
• High DC Current Gain −
h
FE
= 1000 (Min) @ I − 20 Adc
C
• Monolithic Construction with Built−in Base Emitter Shunt
Resistor
• Junction Temperature to +200_C
NPN
PNP
COLLECTOR
CASE
COLLECTOR
CASE
MAXIMUM RATINGS
BASE
1
BASE
1
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
CEO
Vdc
MJ11012
MJ11015/6
60
120
EMITTER 2
EMITTER 2
MJ11016
MJ11012
MJ11015
Collector−Base Voltage
V
CB
Vdc
MJ11012
MJ11015/6
60
120
Emitter−Base Voltage
Collector Current
Base Current
V
5
30
1
Vdc
Adc
Adc
EB
MARKING
DIAGRAM
I
C
I
B
1
2
TO−204AA (TO−3)
CASE 1−07
Total Device Dissipation @ T = 25°C
P
200
W
C
D
Derate above 25°C @ T = 100°C
1.15
W/°C
C
Operating Storage Junction
Temperature Range
T , T
J
−55 to +200
°C
MJ1101xG
AYYWW
MEX
stg
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
MJ1101x = Device Code
x = 2, 5 or 6
Symbol
Max
0.87
275
Unit
°C/W
°C
G
A
YY
WW
MEX
= Pb−Free Package
= Location Code
= Year
Thermal Resistance, Junction−to−Case
R
q
JC
Maximum Lead Temperature for Sol-
dering Purposes for ≤ 10 Seconds
T
L
= Work Week
= Country of Orgin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MJ11012
TO−3
100 Units/Tray
100 Units/Tray
MJ11012G
TO−3
(Pb−Free)
MJ11015
TO−3
100 Units/Tray
100 Units/Tray
MJ11015G
TO−3
(Pb−Free)
MJ11016
TO−3
100 Units/Tray
100 Units/Tray
MJ11016G
TO−3
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2008 − Rev. 5
MJ11012/D
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
COLLECTOR
COLLECTOR
PNP
NPN
MJ11015
MJ11012
MJ11016
BASE
BASE
≈ 8.0 k
≈ 40
≈ 8.0 k
≈ 40
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted.)
C
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
V
Vdc
(BR)CEO
(I = 100 mAdc, I = 0)
MJ11012
MJ11015, MJ11016
60
120
−
−
C
B
Collector−Emitter Leakage Current
(V = 60 Vdc, R = 1k ohm)
I
mAdc
CER
MJ11012
MJ11015, MJ11016
MJ11012
−
−
−
−
1
1
5
5
CE
BE
(V = 120 Vdc, R = 1k ohm)
CE
BE
(V = 60 Vdc, R = 1k ohm, T = 150_C)
CE
BE
C
(V = 120 Vdc, R = 1k ohm, T = 150_C)
MJ11015, MJ11016
CE
BE
C
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
I
−
5
mAdc
mAdc
EBO
CEO
BE
C
Collector−Emitter Leakage Current
(V = 50 Vdc, I = 0)
I
−
1
CE
B
ON CHARACTERISTICS(1)
DC Current Gain
h
FE
−
(I = 20 Adc,V = 5 Vdc)
1000
200
−
−
C
CE
(I = 30 Adc, V = 5 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 20 Adc, I = 200 mAdc)
V
V
Vdc
Vdc
CE(sat)
−
−
3
4
C
B
(I = 30 Adc, I = 300 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 20 A, I = 200 mAdc)
BE(sat)
−
−
3.5
5
C
B
(I = 30 A, I = 300 mAdc)
C
B
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
h
fe
4
−
MHz
(I = 10 A, V = 3 Vdc, f = 1 MHz)
C
CE
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
http://onsemi.com
2
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
30 k
20 k
2
1
PNP MJ11015
NPN MJ11012, MJ11016
0.5
10 k
0.2
0.1
7 k
5 k
0.05
3 k
2 k
PNP MJ11015
0.02
0.01
NPN MJ11012, MJ11016
V
= 3 Vdc
700
500
CE
V
= 5 Vdc
CE
T = 25°C
0.005
I
C
= 10 mAdc
J
T = 25°C
J
300
0.3
0.5 0.7
1
2
3
5
7
10
20 30
10
20 30
50 70 100
200 300 500 700 1.0 k
I , COLLECTOR CURRENT (AMP)
C
f, FREQUENCY (kHz)
Figure 2. DC Current Gain (1)
Figure 3. Small−Signal Current Gain
5
4
3
2
1
0
50
PNP MJ11015
20
10
5
NPN MJ11012, MJ11016
T = 25°C
J
I /I = 100
2
C B
1
0.5
0.2
BONDING WIRE LIMITATION
V
BE(sat)
0.1
0.05
THERMAL LIMITATION @ T = 25°C
C
SECOND BREAKDOWN LIMITATION
V
CE(sat)
0.02
0.01
MJ11012
MJ11015, MJ11016
20 30
0.1
0.2
0.5
1
2
5
10 20
50 100
2
3
5
7
10
50 70 100
200
I , COLLECTOR CURRENT (AMP)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages (1)
Figure 5. Active Region DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
breakdown. Safe operating area curves indicate I − V
C
CE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
http://onsemi.com
3
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
A
N
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
−T−
E
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
K
MIN
MAX
D 2 PL
A
B
C
D
E
G
H
K
L
39.37 REF
M
M
M
Y
0.13 (0.005)
T
Q
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
0.335
0.043
0.070
U
−Y−
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
V
H
2
1
B
G
N
Q
U
V
---
0.151
0.830
0.165
---
3.84
21.08
4.19
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
−Q−
0.13 (0.005)
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
M
Y
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJ11012/D
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