MJD2955G [ONSEMI]

Complementary Power Transistors; 互补功率晶体管
MJD2955G
型号: MJD2955G
厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述:

Complementary Power Transistors
互补功率晶体管

晶体 晶体管
文件: 总6页 (文件大小:117K)
下载:  下载PDF数据表文档文件

MJD2955T4

Complementary Power Transistors DPAK For Surface Mount Applications

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32 ONSEMI

MJD2955T4

SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

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34 MOTOROLA

MJD2955T4G

Complementary Power Transistors DPAK For Surface Mount Applications

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34 ONSEMI

MJD2955T4G

Complementary Power Transistors

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22 ONSEMI

MJD2955T4G

Complementary Power Transistors

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22 ONSEMI

MJD2955TF

10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL

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0 ONSEMI

MJD29C

General Purpose Amplifier Low Speed Switching Applications

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27 FAIRCHILD

MJD29C

Transistor

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0 MOTOROLA

MJD29CI

暂无描述

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29CTF

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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0 FAIRCHILD

MJD29I

1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3

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0 FAIRCHILD