MJD2955T4G [ONSEMI]

Complementary Power Transistors DPAK For Surface Mount Applications; 互补功率晶体管DPAK对于表面贴装应用
MJD2955T4G
型号: MJD2955T4G
厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述:

Complementary Power Transistors DPAK For Surface Mount Applications
互补功率晶体管DPAK对于表面贴装应用

晶体 晶体管 功率双极晶体管 放大器
文件: 总6页 (文件大小:78K)
下载:  下载PDF数据表文档文件

MJD2955TF

10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL

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0 ONSEMI

MJD29C

General Purpose Amplifier Low Speed Switching Applications

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27 FAIRCHILD

MJD29C

Transistor

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0 MOTOROLA

MJD29CI

暂无描述

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29CITU

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29C-T1

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29CTF

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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0 FAIRCHILD

MJD29I

1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3

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0 FAIRCHILD

MJD29-I

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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0 FAIRCHILD

MJD29-T1

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

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0 SAMSUNG

MJD29TF

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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0 FAIRCHILD

MJD-2V16W1P3

120V 17W Downlight

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15 SEOUL

MJD30-1

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

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1 SAMSUNG