MJD2955_11 [ONSEMI]
Complementary Power Transistors; 互补功率晶体管
| 型号： | MJD2955_11 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Power Transistors |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD2955 (PNP)
MJD3055 (NPN)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to MJE2955 and MJE3055
• DC Current Gain Specified to 10 Amperes
MARKING
DIAGRAMS
• High Current Gain−Bandwidth Product − f = 2.0 MHz (Min) @ I
T
C
4
= 500 mAdc
AYWW
J
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
xx55G
2
1
3
DPAK
Machine Model, C u 400 V
CASE 369C
STYLE 1
• These are Pb−Free Packages
MAXIMUM RATINGS
4
Rating
Symbol
Max
Unit
AYWW
J
xx55G
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
V
60
70
5
Vdc
Vdc
Vdc
Adc
Adc
CEO
V
CB
1
V
2
EB
DPAK−3
CASE 369D
STYLE 1
3
I
C
10
6
Base Current
I
B
Total Power Dissipation @ T = 25°C
P {
20
W
C
D
A
Y
= Assembly Location
= Year
Derate above 25°C
0.16
W/°C
Total Power Dissipation (Note1)
P
D
W
WW = Work Week
Jxx55 = Device Code
x = 29 or 30
1.75
0.014
@ T = 25°C
A
W/°C
°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
G
= Pb−Free Package
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
6.25
71.4
°C/W
°C/W
q
JC
Thermal Resistance, Junction−to−Ambient
(Note1)
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2011 − Rev. 10
MJD2955/D
MJD2955 (PNP) MJD3055 (NPN)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
V
60
−
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
Collector Cutoff Current (V = 30 Vdc, I = 0)
I
CEO
−
50
mAdc
CE
B
Collector Cutoff Current
I
mAdc
CEX
(V = 70 Vdc, V
= 1.5 Vdc)
CE
EB(off)
EB(off)
−
−
0.02
2
(V = 70 Vdc, V
= 1.5 Vdc, T = 150_C)
CE
C
Collector Cutoff Current
I
mAdc
CBO
(V = 70 Vdc, I = 0)
CB
E
−
−
0.02
2
(V = 70 Vdc, I = 0, T = 150_C)
CB
E
C
Emitter Cutoff Current (V = 5 Vdc, I = 0)
I
EBO
−
0.5
mAdc
BE
C
ON CHARACTERISTICS
DC Current Gain (Note 2)
h
FE
−
(I = 4 Adc, V = 4 Vdc)
C
CE
20
5
100
−
(I = 10 Adc, V = 4 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 2)
(I = 4 Adc, I = 0.4 Adc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
1.1
8
(I = 10 Adc, I = 3.3 Adc)
C
B
Base−Emitter On Voltage (Note 2)
(I = 4 Adc, V = 4 Vdc)
V
−
1.8
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
2
−
MHz
(I = 500 mAdc, V = 10 Vdc, f = 500 kHz)
C
CE
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ORDERING INFORMATION
†
Device
Package Type
Package
Shipping
MJD2955G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD2955−1G
MJD2955T4G
MJD3055G
DPAK
369D
369C
(Pb−Free)
DPAK
(Pb−Free)
2500 Tape & Reel
75 Units / Rail
DPAK
(Pb−Free)
DPAK
(Pb−Free)
MJD3055T4G
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MJD2955 (PNP) MJD3055 (NPN)
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
2
20
T
C
1.5 15
T
A
1
0.5
0
10
5
SURFACE
MOUNT
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
500
2
300
200
V
CE
= 2 V
T = 25°C
J
1
V
CC
I /I = 10
= 30 V
T = 150°C
J
0.7
0.5
C
B
100
50
25°C
t
r
0.3
0.2
-ꢂ55°C
30
20
0.1
0.07
0.05
t @ V
d
≈ 5 V
BE(off)
10
5
0.03
0.02
0.01 0.02
0.05 0.1
0.2
0.5
1
2
5
10
0.06 0.1
0.2
0.4 0.6
1
2
4
6
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 2. DC Current Gain
Figure 3. Turn−On Time
1.4
1.2
5
T = 25°C
J
3
2
T = 25°C
J
V
CC
I /I = 10
= 30 V
C
B
t
s
1
I = I
B1 B2
1
V
@ I /I = 10
C B
0.7
0.5
0.8
0.6
BE(sat)
V
BE
@ V = 2 V
CE
0.3
0.2
t
f
0.4
0.1
0.07
0.05
0.2
0
V
@ I /I = 10
C B
CE(sat)
0.1
0.2 0.3
0.5
1
2
3
5
10
0.06 0.1
0.2
0.4 0.6
1
2
4
6
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 5. Turn−Off Time
Figure 4. “On” Voltages, MJD3055
http://onsemi.com
3
MJD2955 (PNP) MJD3055 (NPN)
2
1.6
1.2
0.8
0.4
0
V
CC
+ꢂ30 V
T = 25°C
J
25 ms
R
+11 V
C
SCOPE
0
R
B
-ꢂ9 V
V
@ I /I = 10
C B
BE(sat)
D
1
51
t , t ≤ 10 ns
f
DUTY CYCLE = 1%
r
V
BE
@ V = 3 V
CE
-ꢂ4 V
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
R
B
C
V
@ I /I = 10
C B
CE(sat)
D MUST BE FAST RECOVERY TYPE, eg:
1
ꢃ1N5825 USED ABOVE I ≈ 100 mA
B
0.1
0.2 0.3
0.5
1
2
3
5
10
ꢃMSD6100 USED BELOW I ≈ 100 mA
B
I , COLLECTOR CURRENT (AMP)
C
Figure 6. “On” Voltages, MJD2955
Figure 7. Switching Time Test Circuit
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
= 6.25°C/W MAX
JC
0.1
0.07
0.05
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
t
2
1
T
- T = P q
C (pk) JC(t)
0.01
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
1
2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 50
100
200 300 500
1 k
t, TIME (ms)
Figure 8. Thermal Response
10
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
5
500ꢁms
T = 150°C
3
2
J
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
100ꢁms
1
C
CE
1ꢁms
5ꢁms
0.5
0.3
dc
0.1
WIRE BOND LIMIT
THERMAL LIMIT T = 25°C (D = 0.1)
The data of Figure 9 is based on T
= 150_C; T is
J(pk)
C
C
SECOND BREAKDOWN LIMIT
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
0.05
0.03
0.02
T
v 150_C. T
may be calculated from the data in
J(pk)
J(pk)
0.01
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.6
1
2
4
6
10
20
40 60
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
4
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
C
A
D
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
E
c2
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
PLANE
SEATING
PLANE
L2
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 1:
PIN 1. BASE
SOLDERING FOOTPRINT*
2. COLLECTOR
3. EMITTER
4. COLLECTOR
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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MJD2955/D
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