MJW21193 [ONSEMI]
Silicon Power Transistors; 硅功率晶体管
| 型号： | MJW21193 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Power Transistors |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJW21193 (PNP)
MJW21194 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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• Total Harmonic Distortion Characterized
• High DC Current Gain –
16 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
h
FE
= 20 Min @ I = 8 Adc
C
• Excellent Gain Linearity
• High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
250
400
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
200 WATTS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
V
CEO
V
CBO
V
EBO
V
CEX
400
Collector Current – Continuous
Collector Current – Peak (Note 1)
I
C
16
30
1
2
3
TO–247
CASE 340K
STYLE 3
Base Current – Continuous
I
B
5.0
Adc
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
D
200
1.43
Watts
W/°C
C
Operating and Storage Junction
Temperature Range
T , T
–ā65 to
+150
°C
J
stg
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MJW
2119x
LLYWW
Thermal Resistance,
Junction to Case
R
0.7
°C/W
θJC
Thermal Resistance,
Junction to Ambient
R
40
°C/W
θJA
1 BASE
2 COLLECTOR
MJW2119x= Device Code
3 EMITTER
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
x
= 3 or 4
LL
Y
= Location Code
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
TO–247
TO–247
Shipping
MJW21193
MJW21194
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2002 – Rev. 1
MJW21193/D
MJW21193 (PNP) MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
250
–
–
–
–
–
–
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
100
100
100
µAdc
µAdc
µAdc
CEO
CE
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
B
I
–
EBO
CE
Collector Cutoff Current
(V = 250 Vdc, V
C
I
–
CEX
= 1.5 Vdc)
BE(off)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
Adc
S/b
(V
CE
(V
CE
= 50 Vdc, t = 1 s (non–repetitive)
= 80 Vdc, t = 1 s (non–repetitive)
4.0
2.25
–
–
–
–
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 8 Adc, V
= 5 Vdc)
(I = 16 Adc, I = 5 Adc)
20
8
–
–
60
–
C
CE
C
B
Base–Emitter On Voltage
(I = 8 Adc, V = 5 Vdc)
V
–
–
2.2
Vdc
Vdc
BE(on)
C
CE
Collector–Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
V
CE(sat)
–
–
–
–
1.4
4
C
B
(I = 16 Adc, I = 3.2 Adc)
C
B
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
T
HD
%
V
RMS
= 28.3 V, f = 1 kHz, P
= 100 W
RMS
h
LOAD
FE
unmatched
–
0.8
–
(Matched pair h
FE
= 50 @ 5 A/5 V)
h
FE
matched
–
4
0.08
–
–
–
Current Gain Bandwidth Product
(I = 1 Adc, V = 10 Vdc, f
f
MHz
pF
T
= 1 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f
test
C
–
–
500
ob
= 1 MHz)
CB test
E
PNP MJW21193
NPN MJW21194
6.5
8.0
V
CE
= 10 V
6.0
5.5
5.0
4.5
7.0
6.0
5.0
4.0
10 V
5 V
V
CE
= 5 V
3.0
2.0
1.0
4.0
3.5
T = 25°C
T = 25°C
J
J
f
= 1 MHz
f
= 1 MHz
test
test
3.0
0
0.1
1.0
10
0.1
1.0
I COLLECTOR CURRENT (AMPS)
C
10
I
C
COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ā25°C
-ā25°C
V
CE
= 20 V
V = 20 V
CE
0.1
1.0
10
100
0.1
1.0
I COLLECTOR CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, V
= 20 V
Figure 4. DC Current Gain, V
= 20 V
CE
CE
PNP MJW21193
NPN MJW21194
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ā25°C
-ā25°C
V
CE
= 5 V
V = 20 V
CE
0.1
1.0
10
100
0.1
1.0
I COLLECTOR CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, V
= 5 V
Figure 6. DC Current Gain, V
= 5 V
CE
CE
PNP MJW21193
NPN MJW21194
30
35
I
B
= 2 A
1.5 A
I
B
= 2 A
30
25
20
25
20
1.5 A
1 A
1 A
15
10
0.5 A
15
10
0.5 A
5.0
0
5.0
T = 25°C
J
T = 25°C
J
0
0
5.0
10
15
20
25
0
5.0
10
15
20
25
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
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3
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
3.0
2.5
1.4
1.2
T = 25°C
J
I /I = 10
T = 25°C
J
I /I = 10
C B
C B
1.0
0.8
2.0
1.5
1.0
V
BE(sat)
0.6
0.4
V
BE(sat)
0.5
0
0.2
0
V
CE(sat)
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP MJW21193
Figure 10. Typical Saturation Voltages
NPN MJW21194
10
10
1.0
0.1
T = 25°C
J
T = 25°C
J
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
PNP MJW21193
NPN MJW21194
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
100
1000
V , COLLECTOR EMITTER (VOLTS)
CE
V , COLLECTOR EMITTER (VOLTS)
CE
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
MJW21193 (PNP) MJW21194 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T = 150°C; T is
J(pk) C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
10000
10000
T
= 25°C
C
T
= 25°C
C
ib
C
C
ib
1000
100
1000
100
C
ob
C
ob
f
= 1 MHz)
(test)
f
(test)
= 1 MHz)
0.1
1.0
10
100
0.1
1.0
10
100
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW21193 Typical Capacitance
Figure 16. MJW21194 Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 17. Typical Total Harmonic Distortion
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5
MJW21193 (PNP) MJW21194 (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
50 Ω
SOURCE
DUT
AMPLIFIER
ANALYZER
0.5 Ω
0.5 Ω
8.0 Ω
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
MJW21193 (PNP) MJW21194 (NPN)
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
–T–
E
–Q–
NOTES:
M
M
0.25 (0.010)
T B
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
–B–
C
4
U
L
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.799
0.626
0.209
0.055
A
B
C
D
E
F
19.7
15.3
4.7
20.3 0.776
15.9 0.602
5.3 0.185
1.4 0.039
A
K
R
1.0
1
2
3
1.27 REF
2.0
5.5 BSC
0.050 REF
2.4 0.079
0.094
G
H
J
0.216 BSC
–Y–
2.2
0.4
2.6 0.087
0.8 0.016
14.8 0.559
0.102
0.031
0.583
P
K
L
14.2
5.5 NOM
0.217 NOM
P
Q
R
U
V
3.7
3.55
4.3 0.146
3.65 0.140
0.169
0.144
V
H
5.0 NOM
5.5 BSC
3.0
0.197 NOM
0.217 BSC
0.118 0.134
F
J
G
3.4
D
STYLE 3:
M
S
Y Q
PIN 1. BASE
2. COLLECTOR
3. EMITTER
0.25 (0.010)
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7
MJW21193 (PNP) MJW21194 (NPN)
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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MJW21193/D
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