MMBD301LT1 [ONSEMI]
SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES; 硅热载流子探测器和开关二极管
| 型号： | MMBD301LT1 |
| 厂家： | 
ONSEMI |
| 描述： | SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MBD301/D
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Motorola Preferred Devices
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
•
•
•
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ V = 15 V
R
Low Reverse Leakage – I = 13 nAdc (Typ) MBD301, MMBD301
R
1
2
CASE 182–02, STYLE 1
(TO–226AC)
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
MBD301
MMBD301LT1
Value
30
Rating
Reverse Voltage
Forward Power Dissipation
Symbol
Unit
2
1
CATHODE
ANODE
V
R
Volts
P
F
J
@ T = 25°C
280
2.8
200
2.0
mW
mW/°C
A
Derate above 25°C
3
Operating Junction
Temperature Range
T
°C
°C
–55 to +125
–55 to +150
1
2
Storage Temperature Range
DEVICE MARKING
MMBD301LT1 = 4T
T
stg
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
1
CATHODE
ANODE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
30
—
Typ
—
Max
—
Unit
Volts
pF
Reverse Breakdown Voltage (I = 10 µA)
V
(BR)R
R
Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1
C
0.9
1.5
R
T
Reverse Leakage (V = 25 V) Figure 3
I
—
13
200
0.45
0.6
nAdc
Vdc
Vdc
R
R
Forward Voltage (I = 1.0 mAdc) Figure 4
V
—
0.38
0.52
F
F
F
Forward Voltage (I = 10 mAdc) Figure 4
V
—
F
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1997
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
2.4
500
f = 1.0 MHz
400
2.0
1.6
1.2
0.8
0.4
0
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90
100
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD CURRENT (mA)
R
F
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
T
= 100°C
A
1.0
T
= –40°C
T
= 85°C
A
A
75
°
C
C
0.1
1.0
0.1
25°
T
= 25°C
A
0.01
0.001
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V
, REVERSE VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
R
F
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 INPUT)
SINUSOIDAL
GENERATOR
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS
UNCONTROLLED IN P AND BEYOND DIM K
MINIMUM.
R
SEATING
PLANE
D
L
P
F
J
K
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MIN
MAX
0.205
0.210
0.165
0.022
0.019
MIN
4.45
4.32
3.18
0.41
0.407
1.27 BSC
3.54 BSC
0.36
12.70
6.35
2.03
–––
2.93
3.43
MAX
5.21
5.33
4.49
0.56
0.482
0.175
0.170
0.125
0.016
0.016
0.050 BSC
0.100 BSC
0.014
0.500
0.250
0.080
–––
0.115
0.135
SECTION X–X
X X
D
G
H
0.016
–––
–––
0.105
0.050
–––
0.41
–––
–––
2.66
1.27
–––
–––
V
C
R
V
–––
1
2
N
STYLE 1:
PIN 1. ANODE
2. CATHODE
CASE 182–02
(TO–226AC)
ISSUE H
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
S
B
INCHES
MIN MAX
MILLIMETERS
1
2
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
V
G
C
K
L
S
H
J
D
K
V
CASE 318–08
ISSUE AF
SOT–23 (TO–236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatMotorola
was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
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MBD301/D
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