MMBTA13LT1G_09 [ONSEMI]
Darlington Amplifier Transistors; 达林顿晶体管放大器
| 型号： | MMBTA13LT1G_09 |
| 厂家： | 
ONSEMI |
| 描述： | Darlington Amplifier Transistors |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA13LT1G,
MMBTA14LT1G
Darlington Amplifier
Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR 3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
BASE
1
MAXIMUM RATINGS
EMITTER 2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
30
Unit
Vdc
V
CES
CBO
EBO
V
V
30
Vdc
3
SOT−23 (TO−236)
10
Vdc
CASE 318
STYLE 6
1
Collector Current − Continuous
I
C
300
mAdc
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
1x M G
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
G
JA
1
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
1x = Device Code
x = M for MMBTA13LT1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
x = N for MMBTA14LT1
= Date Code*
T , T
−55 to +150
M
J
stg
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBTA13LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA14LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 3
MMBTA13LT1/D
MMBTA13LT1G, MMBTA14LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
nAdc
nAdc
(BR)CES
(I = 100 mAdc, V = 0)
30
−
−
C
BE
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
CBO
100
100
CB
E
Emitter Cutoff Current
(V = 10 Vdc, I = 0)
I
EBO
−
EB
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 5.0 Vdc)
MMBTA13
MMBTA14
5000
10,000
−
−
C
CE
(I = 100 mAdc, V = 5.0 Vdc)
MMBTA13
MMBTA14
10,000
20,000
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 0.1 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
1.5
2.0
C
B
Base−Emitter On Voltage
(I = 100 mAdc, V = 5.0 Vdc)
V
BE
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
f
T
MHz
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
125
−
C
CE
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f = |h | • f
.
test
T
fe
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
MMBTA13LT1G, MMBTA14LT1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
R ≈ 0
BANDWIDTH = 1.0 Hz
S
1.0
0.7
0.5
200
100
50
I
C
= 1.0 mA
0.3
0.2
10 mA
100 mA
100 mA
10 mA
0.1
0.07
0.05
20
I
C
= 1.0 mA
10
0.03
0.02
5.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
12
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 10 Hz TO 15.7 kHz
= 10 mA
100
70
10
8.0
6.0
4.0
2.0
I
C
10 mA
50
100 mA
100 mA
30
20
I
C
= 1.0 mA
1.0 mA
10
0
1.0 2.0
5.0
10
20
50 100 200
500 1000
1.0 2.0
5.0
10
20
50 100 200
500 1000
R , SOURCE RESISTANCE (kW)
S
R , SOURCE RESISTANCE (kW)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
http://onsemi.com
3
MMBTA13LT1G, MMBTA14LT1G
SMALL−SIGNAL CHARACTERISTICS
20
10
4.0
V
= 5.0 V
CE
f = 100 MHz
T = 25°C
J
T = 25°C
J
2.0
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0 4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200ꢀk
3.0
2.5
2.0
1.5
1.0
0.5
T = 125°C
J
T = 25°C
J
100ꢀk
70ꢀk
50ꢀk
I
C
=
50 mA
250 mA 500 mA
10 mA
25°C
30ꢀk
20ꢀk
10ꢀk
7.0ꢀk
5.0ꢀk
-ꢁ55°C
V
CE
= 5.0 V
3.0ꢀk
2.0ꢀk
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
5.0 7.0 10
20 30
50 70 100
200 300
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
-ꢁ1.0
-ꢁ2.0
-ꢁ3.0
-ꢁ4.0
-ꢁ5.0
-ꢁ6.0
*APPLIES FOR I /I ≤ h /3.0
C B
FE
25°C TO 125°C
T = 25°C
J
*R
FOR V
CE(sat)
q
VC
V
@ I /I = 1000
-ꢁ55°C TO 25°C
25°C TO 125°C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
BE(on)
@ V = 5.0 V
CE
q
FOR V
BE
VB
-ꢁ55°C TO 25°C
V
@ I /I = 1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100 200 300
500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
http://onsemi.com
4
MMBTA13LT1G, MMBTA14LT1G
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
SINGLE PULSE
0.05
0.03
0.02
Z
Z
= r(t) • R ꢂT
- T = P
Z
q
q
q
q
JC(t)
JA(t)
JC
J(pk)
C
(pk) JC(t)
= r(t) • R ꢂT
- T = P
Z
q
q
JA
J(pk)
A
(pk) JA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢀk
2.0ꢀk
5.0ꢀk 10ꢀk
t, TIME (ms)
Figure 12. Thermal Response
1.0ꢀk
700
1.0 ms
500
T
= 25°C
300
200
C
100 ms
T = 25°C
A
1.0 s
100
70
50
30
20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4 0.6
40
1.0
2.0 4.0 6.0 10
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTYꢀCYCLE + t ꢀf +
t
1
1
t
P
PEAK PULSE POWER = P
P
Design Note: Use of Transient Thermal Resistance Data
http://onsemi.com
5
MMBTA13LT1G, MMBTA14LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBTA13LT1/D
相关型号：
©2020 ICPDF网 联系我们和版权申明