MUR2100ERL [ONSEMI]
Ultrafast “E” Series with High Reverse Energy Capability; 超快的“E”系列高能量反能力
| 型号： | MUR2100ERL |
| 厂家： | 
ONSEMI |
| 描述： | Ultrafast “E” Series with High Reverse Energy Capability |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR2100E
Preferred Device
SWITCHMODE
Power Rectifier
Ultrafast “E” Series with High Reverse
Energy Capability
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. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state−of−the−art devices have the
following features:
ULTRAFAST
RECTIFIER
2 AMPS
• 20 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
1000 VOLTS
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
AXIAL LEAD
PLASTIC
• Polarity: Cathode Indicated by Polarity Band
CASE 059
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MARKING DIAGRAM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
1000
V
RRM
RWM
MUR
2100E
R
Average Rectified Forward Current
(Note 1)
I
2.0 @
T = 35°C
A
A
A
F(AV)
MUR2100E = Device Code
Non-Repetitive Peak Surge Current
I
35
FSM
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
ORDERING INFORMATION
Operating Junction Temperature and
Storage Temperature Range
T , T
−65 to
+175
°C
J
stg
†
Device
Package
Shipping
THERMAL CHARACTERISTICS
Characteristic
MUR2100E
Axial Lead
(Pb−Free)
1000 Units/Bag
Symbol
Value
Unit
Maximum Thermal Resistance, Junc-
tion−to−Ambient
R
(Note 1)
°C/W
q
MUR2100ERL
Axial Lead
(Pb−Free)
5000/Tape & Reel
JA
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
July, 2004 − Rev. 4
MUR2100E/D
MUR2100E
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
V
F
V
(I = 2.0 A, T = 150°C)
1.75
2.20
F
J
(I = 2.0 A, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T = 100°C)
i
R
mA
600
10
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
rr
ns
(I = 1.0 A, di/dt = 50 A/ms)
100
75
F
(I = 0.5 A, I = 1.0 A, I = 0.25 A)
F
R
REC
Maximum Forward Recovery Time
(I = 1.0 A, di/dt = 100 A/ms, I to 1.0 V)
t
fr
75
ns
F
REC
Controlled Avalanche Energy (See Test Circuit in Figure 6)
W
AVAL
10
mJ
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
10
V @ 175°C
F
V @ 175°C
F
100°C
150°C
150°C
1.0
1.0
0.1
100°C
25°C
25°C
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V , INSTANTANEOUS VOLTAGE (V)
F
V
F,
INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
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2
MUR2100E
1.0E−01
1.0E−02
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
V
@ 175°C
R
150°C
100°C
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
V
@ 175°C
R
150°C
100°C
25°C
25°C
0
200
400
600
800
1000
0
200
400
600
800
1000
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 4. Typical Reverse Current
Figure 3. Maximum Reverse Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4
3
2
1
0
DC
SQUARE WAVE
DC
SQUARE WAVE
0
50
100
150
200
0
0.5
1
1.5
2
2.5
T , AMBIENT TEMPERATURE (°C)
A
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating
Figure 6. Power Dissipation
100
10
1
0
20 40 60 80 100 120 140 160 180 200
V , REVERSE VOLTAGE (V)
R
Figure 7. Typical Capacitance
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3
MUR2100E
NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient (R ) for the mountings shown is to be
qJA
used as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R
IN STILL AIR
q
JA
Lead Length, L
Mounting
Method
1/8
52
67
1/4
65
80
50
1/2
72
87
Units
°C/W
°C/W
°C/W
1
2
3
R
q
JA
MOUNTING METHOD 1
L
L
MOUNTING METHOD 2
L
L
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8″
Board Ground Plane
P.C. Board with
1−1/2″ X 1−1/2″ Copper Surface
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4
MUR2100E
PACKAGE DIMENSIONS
AXIAL LEAD (DO−41)
CASE 59−10
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. 59−04 OBSOLETE, NEW STANDARD 59−09.
4. 59−03 OBSOLETE, NEW STANDARD 59−10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
F
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.10
2.00
0.71
−−−
MAX
5.20
2.70
0.86
1.27
−−−
A
B
D
F
0.161
0.079
0.028
−−−
0.205
0.106
0.034
0.050
−−−
A
F
K
1.000
25.40
K
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5
MUR2100E
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MUR2100E/D
相关型号：
MUR2100ERLG
SWITCHMODE Power Rectifier Ultrafast âEâ Series with High Reverse Energy Capability
ONSEMI
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