NB7L216MN [ONSEMI]

2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination; 2.5V / 3.3V , 12GB / s的多级时钟/数据输入到RSECL ,高增益接收器/缓冲器/转换器具有内部端接
NB7L216MN
型号: NB7L216MN
厂家: ONSEMI    ONSEMI
描述:

2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
2.5V / 3.3V , 12GB / s的多级时钟/数据输入到RSECL ,高增益接收器/缓冲器/转换器具有内部端接

转换器 接口集成电路 时钟
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NB7L216  
2.5V/3.3V, 12Gb/s Multi  
Level Clock/Data Input to  
RSECL, High Gain  
Receiver/Buffer/Translator  
with Internal Termination  
http://onsemi.com  
MARKING DIAGRAM*  
Description  
16  
The NB7L216 is a differential receiver/driver with high gain output  
targeted for high frequency applications. The device is functionally  
equivalent to the NBSG16 but with much higher gain output. This  
highly versatile device provides 35 dB of gain up to 7 GHz.  
Inputs incorporate internal 50 W termination resistors and accept  
Negative ECL (NECL), Positive ECL (PECL), LVTTL, LVCMOS,  
CML, or LVDS. Outputs are Reduced Swing ECL (RSECL), 400 mV.  
1
NB7L  
216  
QFN−16  
MN SUFFIX  
CASE 485G  
ALYWG  
G
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
The V pin is an internally generated voltage supply available to  
BB  
= Year  
this device only. V is used as a reference voltage for single−ended  
= Work Week  
= Pb−Free Package  
BB  
NECL or PECL inputs. For all single−ended input conditions, the  
(Note: Microdot may be in either location)  
unused complementary differential input should be connected to V  
BB  
as a switching reference voltage. V may also rebias AC coupled  
BB  
*For additional marking information, refer to  
Application Note AND8002/D.  
inputs. When used, decouple V via a 0.01 mF capacitor and limit  
BB  
current sourcing or sinking to 0.5 mA. When not used, V output  
should be left open.  
BB  
VTD  
Application notes, models and support documentation are available  
at www.onsemi.com.  
50 W  
Q
Q
D
D
Features  
High Gain of 35 dB from DC to 7 GHz Typical  
High IIP3: 0 dBm Typical  
50 W  
20 mV Minimum Input Voltage Swing  
Maximum Input Clock Frequency up to 8.5 GHz  
Maximum Input Data Rate up to 12 Gb/s Typical  
<0.5 ps of RMS Clock Jitter  
VTD  
Figure 1. Functional Block Diagram  
<9 ps of Data Dependent Jitter  
120 ps Typical Propagation Delay  
30 ps Typical Rise and Fall Times  
Device DDJ = 3 ps  
RSPECL Output with Operating Range: V = 2.375 V to 3.465 V  
CC  
with V = 0 V  
EE  
RSNECL Output with RSNECL or NECL Inputs with Operating  
Range: V = 0 V with V = −2.375 V to −3.465 V  
CC  
EE  
RSECL Output Level (400 mV Peak−to−Peak Output),  
50 W Internal Input Termination Resistors (Temperature−Coefficient  
of < 6.38 mW/°C)  
VBB – ECL Reference Voltage Output  
Pb−Free Packages are Available  
TIME (17 ps/div)  
Figure 2. Typical Output Waveform at  
12 Gb/s with PRBS 223−1 (VINPP = 400 mV,  
Input Signal DDJ = 12 ps)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 11 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 2  
NB7L216/D  
NB7L216  
V
V
V
V
Exposed Pad (EP)  
EE  
EE  
BB  
EE  
16  
15  
14  
13  
VTD  
1
2
3
4
12  
11  
10  
9
V
CC  
D
D
Q
Q
NB7L216  
VTD  
V
CC  
5
6
7
8
V
V
V
V
EE EE  
EE  
EE  
Figure 3. QFN−16 Pinout (Top View)  
Table 1. PIN DESCRIPTION  
Pin  
1
Name  
VTD  
D
I/O  
Description  
Internal 50 W termination pin. See Table 7. Note 1  
2
LVPECL, CML,  
LVCMOS, LVDS,  
LVTTL Input  
Inverted differential input. Note 1.  
3
D
LVPECL, CML,  
LVCMOS, LVDS,  
LVTTL Input  
Noninverted differential input. Note 1.  
4
15  
VTD  
Internal 50 W termination pin. See Table 7. Note 1.  
V
V
Internally generated ECL reference voltage supply.  
BB  
EE  
5, 6, 7, 8, 13, 14  
Negative supply voltage. All V pins must be externally connected to power  
EE  
supply to guarantee proper operation.  
9, 12  
10  
V
Positive supply voltage. All V pins must be externally connected to power  
supply to guarantee proper operation  
CC  
CC  
Q
Q
RSECL Output  
RSECL Output  
Noninverted differential output. Typically receiver terminated with 50 W resistor  
to V = V − 2.0 V.  
TT  
CC  
11  
Inverted differential output. Typically receiver terminated with 50 W resistor to  
= V − 2.0 V.  
V
TT  
CC  
EP  
Exposed pad (EP). Thermally exposed pad on the package bottom must be  
attached to a heat sinking conduit. It is recommended to connect the EP to the  
lower potential, V  
.
EE  
1. In the differential configuration when the input termination pins (VTD, VTD) are connected to a common termination voltage and if no signal  
is applied on D/D input then the device will be susceptible to self−oscillation.  
http://onsemi.com  
2
 
NB7L216  
Table 2. ATTRIBUTES  
Characteristics  
Value  
ESD Protection  
Human Body Model  
Machine Model  
> 500 kV  
> 10 V  
Charged Device Model  
> 4 kV  
Moisture Sensitivity (Note 2)  
Pb Pkg  
Level 1  
Pb−Free Pkg  
Level 1  
QFN−16  
Flammability Rating  
Transistor Count  
Oxygen Index: 28 to 34  
UL 94 V−0 @ 0.125 in  
164  
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test.  
2. For additional information, see Application Note AND8003/D.  
Table 3. MAXIMUM RATINGS (Note 3)  
Symbol Parameter  
Positive Power Supply  
Condition 1  
= 0 V  
Condition 2  
Rating  
3.6  
Unit  
V
V
V
V
V
V
CC  
EE  
I
EE  
CC  
Negative Power Supply  
= 0 V  
−3.6  
V
Positive Input  
Negative Input  
V
V
= 0 V  
= 0 V  
V = V  
3.6  
−3.6  
V
V
EE  
CC  
I
I
CC  
EE  
V = V  
V
Differential Input Voltage  
|D − D|  
2.8  
V
INPP  
I
I
I
Input Current Through R (50 W Resistor)  
Static  
Surge  
45  
80  
mA  
mA  
IN  
T
Output Current  
Continuous  
Surge  
25  
50  
mA  
mA  
OUT  
V
Sink/Source  
0.5  
mA  
°C  
BB  
BB  
T
Operating Temperature Range  
Storage Temperature Range  
−40 to +85  
−65 to +150  
A
T
°C  
stg  
q
Thermal Resistance (Junction−to−Ambient)  
(Note 4)  
0 lfpm  
500 lfpm  
QFN−16  
QFN−16  
42  
35  
°C/W  
°C/W  
JA  
q
Thermal Resistance (Junction−to−Case)  
Wave Solder  
1S2P (Note 4)  
QFN−16  
4
°C/W  
°C  
JC  
T
sol  
Pb  
Pb−Free  
265  
265  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
3. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.  
If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.  
4. JEDEC standard multilayer board − 1S2P (1 signal, 2 power) with 8 filled thermal vias under exposed pad.  
http://onsemi.com  
3
 
NB7L216  
Table 4. DC CHARACTERISTICS, CLOCK INPUTS, CML OUTPUTS V = 2.375 V to 3.465 V, V = 0 V  
CC  
EE  
−40 5C  
Typ  
25 5C  
Typ  
27  
85 5C  
Typ  
27  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
Characteristic  
Unit  
I
Power Supply Current (VTD/VTD  
open)  
27  
35  
35  
35  
mA  
EE  
V
V
Output HIGH Voltage  
(Note 5 and 6)  
V
V
V
V
V
V
−900  
V
–950  
V
−900  
V
CC  
−850  
mV  
mV  
OH  
OL  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
−1040 −980  
−940 −1000 −950  
Output LOW Voltage  
(Note 5 and 6)  
V
V
V
V
V
V
V
V
V
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
−1520 −1430 −1320 −1470 −1370 −1270 –1440 −1340 −1240  
DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED (see Figures 14 and 16)  
V
V
V
Input Threshold Reference Voltage  
Range (Note 7 and 8)  
1100  
V
−10  
1100  
V
−10  
1100  
V
CC  
−10  
mV  
mV  
mV  
TH  
IH  
IL  
CC  
CC  
Single−ended Input HIGH Voltage  
(Note 8)  
V
V
V
V
V
V
CC  
th  
CC  
th  
CC  
th  
+10  
+ 10  
+10  
Single−ended Input LOW Voltage  
(Note 8)  
V
V
−10  
V
V
−10  
V
V
th  
−10  
EE  
th  
EE  
th  
EE  
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (see Figures 15 and 17)  
V
V
V
Differential Input HIGH Voltage  
(Note 9)  
1105  
V
1105  
V
V
1105  
V
V
mV  
mV  
mV  
IHD  
CC  
CC  
CC  
CC  
CC  
Differential Input LOW Voltage  
(Note 9)  
V
V
−10  
V
V
EE  
ILD  
EE  
CC  
EE  
−10  
−10  
Input Common Mode Range  
(Differential Configuration,  
Note 9 and 10)  
1100  
V
−5  
1100  
V
–5  
1100  
V
CC  
–5  
CMR  
CC  
CC  
V
Differential Input Voltage  
10  
−5  
2500  
+5  
10  
−5  
2500  
+5  
10  
−5  
2500  
+5  
mV  
ID  
(V  
− V )  
ILD  
IHD  
V
V
Input Offset Voltage (Note 11)  
0
0
0
mV  
mV  
IO  
Internally Generated Reference  
Voltage Supply  
V
V
V
V
V
V
V
V
V
CC  
BB  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
−1425 −1345 −1265 −1425 −1345 −1265 −1425 −1345 −1265  
(Only 3 V – 3.6 V Supply Load with  
−100 mA)  
I
I
Input HIGH Current  
D/Db (VTD/VTD Open)  
0
20  
10  
100  
75  
0
20  
10  
100  
75  
0
20  
10  
100  
75  
mA  
mA  
IH  
Input LOW Current  
D/Db (VTD/VTD Open)  
−25  
45  
−25  
45  
−25  
45  
IL  
R
R
Internal Input Termination Resistor  
50  
55  
50  
55  
50  
55  
W
TIN  
Internal Input Termination Resistor  
Temperature Coefficient  
6.38  
6.38  
6.38  
mW/°C  
T_Coef  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values  
are applied individually under normal operating conditions and not valid simultaneously.  
5. Outputs evaluated with 50 W resistors to V = V − 2.0 V for proper operation.  
TT  
CC  
6. Input and output parameters vary 1:1 with V  
.
CC  
7. V is applied to the complementary input when operating in single−ended mode.  
TH  
8. V , V and V parameters must be complied simultaneously.  
IH  
IL  
TH  
9. V , V  
and V  
parameters must be complied simultaneously.  
IHD  
ILD  
CMR  
10.V  
min varies 1:1 with V , V  
max varies 1:1 with V  
.
CC  
CMR  
EE  
CMR  
11. Typical standard deviation of input offset voltage is 1.76 mV.  
http://onsemi.com  
4
 
NB7L216  
Table 5. AC CHARACTERISTICS V = 2.375 V to 3.465 V, V = 0 V; (Note 12)  
CC  
EE  
−40°C  
25°C  
85°C  
Min Typ Max Min Typ  
Max Min  
Typ  
Max  
Symbol  
Characteristic  
Unit  
V
Output Voltage Amplitude (@ V  
(See Figure 4)  
)f 7.0 GHz 275 380  
INPPmin in  
275 380  
100 250  
275  
100  
380  
250  
mV  
OUTPP  
f 8.5 GHz 100 250  
in  
f
Maximum Operating Data Rate  
Power Gain DC to 7 GHz  
Input Return Loss @ 7 GHz  
Output Return Loss @ 7 GHz  
10  
12  
35  
10  
12  
35  
10  
12  
35  
Gb/s  
dB  
DATA  
|S21|  
|S11|  
|S22|  
|S12|  
IIP3  
−10  
−5  
−10  
−5  
−10  
−5  
dB  
dB  
Reverse Isolation (Differential Configuration)  
Input Third Order Intercept  
−25  
0
−25  
0
−25  
0
dB  
dBm  
ps  
t
t
,
Propagation Delay to Output Differential @ 1 GHz  
60  
120  
180  
60  
120  
180  
60  
120  
180  
PLH  
PHL  
t
Duty Cycle Skew (Note 12)  
Device to Device Skew (Note 17)  
2
5
10  
20  
2
5
10  
20  
2
5
10  
20  
ps  
ps  
SKEW  
t
RMS Random Clock Jitter  
(Note 15)  
f
v 8.5 GHz  
in  
0.1  
0.5  
0.1  
0.5  
0.1  
0.5  
JITTER  
Peak−to−Peak Data Dependent Jitter (Note 16)  
f
f
f
f
= 3.5 Gb/s  
= 5.0 Gb/s  
= 10 Gb/s  
= 12 Gb/s  
1
3
4
4
7
9
9
9
1
3
4
4
7
9
9
9
1
3
4
4
7
9
9
9
DATA  
DATA  
DATA  
DATA  
V
Input Voltage Swing/Sensitivity  
(Differential Configuration) (Note 14 and Figure 12)  
20  
2500  
20  
2500  
20  
2500  
mV  
ps  
INPP  
t
t
Output Rise/Fall Times @ 0.5 GHz  
(20% − 80%)  
Q, Q  
30  
45  
30  
45  
30  
45  
r
f
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values  
are applied individually under normal operating conditions and not valid simultaneously.  
12.Measured by forcing V  
from a 50% duty cycle clock source. All loading with an external R = 50 W to V =V − 2.0 V. Input edge  
INPPmin  
L TT CC  
rates 40 ps (20% − 80%).  
13.Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw− and Tpw+ @ 1 GHz.  
14.V (MAX) cannot exceed V − V . Input voltage swing is a single−ended measurement operating in differential mode.  
INPP  
CC  
EE  
15.Additive RMS jitter with 50% duty cycle clock signal.  
16.Additive peak−to−peak data dependent jitter with input NRZ data at PRBS 2 −1.  
17.Device to device skew is measured between outputs under identical transition @ 1 GHz.  
23  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
−40°C  
−40°C  
85°C  
25°C  
85°C  
25°C  
0
0
0
2
4
6
7
8
9
10  
11  
12  
0
2
4
6
7
8
9
10  
11  
12  
INPUT CLOCK FREQUENCY (GHz)  
INPUT CLOCK FREQUENCY (GHz)  
Figure 4. Output Voltage Amplitude (VOUTPP) versus  
Input Clock Frequency (fIN) and Temperature  
(VINPP = 400 mV, VCC = 3.3 V and VEE = 0 V)  
Figure 5. Output Voltage Amplitude (VOUTPP) versus  
Input Clock Frequency (fIN) and Temperature  
(VINPP = 20 mV, VCC = 3.3 V and VEE = 0 V)  
http://onsemi.com  
5
 
NB7L216  
Device DDJ = 1 ps  
Device DDJ =1 ps  
TIME (66 ps/div)  
TIME (54 ps/div)  
Figure 6. Typical Output Waveform at 2.488 Gb/s with  
Figure 7. Typical Output Waveform at 3.5 Gb/s with  
PRBS 223−1 (VINPP = 400 mV, Input Signal DDJ = 12 ps) PRBS 223−1 (VINPP = 400 mV, Input Signal DDJ = 12 ps)  
Device DDJ =2 ps  
Device DDJ = 3 ps  
TIME (37 ps/div)  
TIME (21 ps/div)  
Figure 8. Typical Output Waveform at 5 Gb/s with PRBS  
223−1 (VINPP = 400 mV, Input Signal DDJ = 12 ps)  
Figure 9. Typical Output Waveform at 10 Gb/s with  
PRBS 223−1 (VINPP = 400 mV, Input Signal DDJ = 12 ps)  
0
40  
35  
30  
25  
20  
15  
10  
5
−10  
S22  
−20  
S11  
−30  
−40  
−50  
0
0
2
4
6
8
10  
12  
14  
16  
0
2
4
6
8
10  
12  
14  
16  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 10. Small Signal Gain – S21 Magnitude*  
Figure 11. Input and Output Reflection – S11  
and S22 Magnitude*  
*T = +25°C, V = 3.3 V, V =0 V, P = −44 dBm,Z = Z = 50 W, input and output matching network is not included.  
A
CC  
EE  
IN  
S
L
http://onsemi.com  
6
NB7L216  
Table 6. TYPICAL DEVICE S−PARAMETERS  
S11  
S21  
S12  
S22  
Frequency  
(Hz)  
dbS11  
−45.2  
−30.4  
−36.2  
−27.4  
−12.3  
−10.6  
−19.0  
−10.6  
−10.7  
−9.0  
|S11|  
0.005  
0.030  
0.015  
0.042  
0.244  
0.295  
0.112  
0.294  
0.291  
0.354  
0.294  
0.341  
0.340  
0.133  
0.053  
0.206  
0.462  
0.552  
0.652  
0.326  
0.283  
0.384  
0.506  
0.356  
0.166  
0.175  
0.250  
0.265  
0.140  
0.068  
íS11  
−88.5  
−134.7  
−146.5  
25.7  
dbS21  
37.2  
37.3  
37.1  
37.4  
36.2  
36.9  
35.4  
35.6  
36.0  
35.1  
36.4  
35.8  
36.2  
34.3  
33.2  
25.2  
22.6  
19.4  
19.0  
18.7  
14.5  
12.9  
12.7  
12.9  
10.5  
9.9  
|S21|  
72.799  
73.145  
íS21  
−33.2  
−68.4  
dbS12  
−72.3  
−45.8  
−43.3  
−37.1  
−29.9  
−26.1  
−28.3  
−24.8  
−22.5  
−25.2  
−24.3  
−24.5  
−21.9  
−22.7  
−24.4  
−21.5  
−19.4  
−19.0  
−19.4  
−24.0  
−25.9  
−29.4  
−21.4  
−19.4  
−21.0  
−24.0  
−22.0  
−18.6  
−20.1  
−20.2  
|S12|  
0.001  
0.005  
0.007  
0.014  
0.032  
0.050  
0.038  
0.058  
0.075  
0.055  
0.061  
0.060  
0.080  
0.073  
0.060  
0.084  
0.107  
0.112  
0.107  
0.063  
0.051  
0.034  
0.085  
0.107  
0.089  
0.063  
0.079  
0.118  
0.099  
0.098  
íS12  
−139.1  
129.8  
98.5  
dbS22  
−2.5  
|S22|  
0.749  
0.714  
0.717  
0.666  
0.599  
0.485  
0.566  
0.417  
0.201  
0.367  
0.398  
0.397  
0.237  
0.428  
0.445  
0.416  
0.249  
0.246  
0.267  
0.301  
0.288  
0.213  
0.085  
0.214  
0.239  
0.272  
0.181  
0.120  
0.163  
0.274  
íS22  
157.4  
154.3  
132.8  
107.1  
92.1  
4.97E+08  
1.02E+09  
1.51E+09  
2.00E+09  
2.52E+09  
3.01E+09  
3.50E+09  
4.02E+09  
4.51E+09  
4.99E+09  
5.48E+09  
6.01E+09  
6.49E+09  
6.98E+09  
7.51E+09  
7.99E+09  
8.52E+09  
9.00E+09  
9.49E+09  
1.00E+10  
1.05E+10  
1.10E+10  
1.15E+10  
1.20E+10  
1.25E+10  
1.30E+10  
1.35E+10  
1.40E+10  
1.45E+10  
1.50E+10  
−2.9  
71.433 −105.4  
74.061 −139.0  
64.810 −179.5  
−2.9  
91.8  
−3.5  
−27.7  
−83.8  
−22.1  
−120.3  
167.4  
87.1  
54.4  
−4.4  
70.102  
58.933  
60.437  
62.843  
56.576  
65.812  
61.327  
144.5  
99.9  
9.4  
−6.3  
77.3  
25.9  
−5.0  
67.9  
73.8  
−32.6  
−68.3  
−107.2  
−121.4  
−125.7  
−152.4  
177.5  
165.7  
152.8  
120.7  
109.9  
62.0  
−7.6  
54.2  
41.1  
−13.9  
−8.7  
70.2  
14.2  
81.2  
−10.6  
−9.3  
62.7  
−16.1  
−72.8  
−8.0  
50.4  
108.2  
59.4  
−8.0  
−0.9  
−9.4  
64.212 −119.4  
52.039 −141.5  
−12.5  
−7.4  
−27.2  
−32.2  
−37.9  
−54.7  
−73.7  
−62.5  
−100.2  
117.0  
−172.0  
74.0  
−17.5  
−25.6  
−13.7  
−6.7  
25.5  
107.9  
146.5  
117.9  
106.2  
71.1  
45.861  
18.093  
13.434  
9.336  
8.937  
8.595  
5.298  
4.408  
4.339  
4.395  
3.360  
3.121  
2.728  
2.314  
1.856  
1.695  
164.6  
133.6  
116.2  
102.0  
61.1  
−7.0  
−7.6  
−12.1  
−12.2  
11.5  
−10.4  
−10.8  
−13.4  
−21.4  
−13.4  
−12.4  
11.3  
−14.9  
−18.4  
−15.7  
11.2  
−5.2  
−3.7  
−9.7  
46.2  
18.6  
50.6  
11.0  
−8.3  
35.8  
−13.3  
−9.6  
12.9  
7.2  
21.1  
−5.9  
−0.4  
−33.7  
−63.4  
−97.8  
119.7  
−148.9  
−167.1  
167.6  
145.0  
36.3  
−148.6  
159.5  
169.2  
171.6  
177.8  
140.3  
98.2  
−9.0  
−23.8  
−46.9  
−83.0  
−96.5  
−105.9  
−97.8  
−108.9  
−9.5  
−15.6  
−15.1  
−12.0  
11.5  
−17.0  
−23.4  
−39.0  
−39.9  
−39.1  
−74.2  
−107.0  
−128.1  
8.7  
7.3  
5.4  
4.6  
96.1  
NOTE: T = +25°C, V =3.3V, V = 0 V, P = −44 dBm, Z = Z = 50 W, input and output matching network is not included.  
A
CC  
EE  
IN  
S
L
http://onsemi.com  
7
NB7L216  
D
V
V
= V (D) − V (D)  
IH IL  
INPP  
D
Q
= V (Q) − V (Q)  
OUTPP  
OH  
OL  
Q
t
PHL  
t
PLH  
Figure 12. AC Reference Measurement  
Z = 50 W  
Q
Q
D
D
o
Receiver  
Device  
Driver  
Device  
Z = 50 W  
o
50 W  
50 W  
V
TT  
V
= V − 2.0 V  
TT  
CC  
Figure 13. Typical Termination for Output Driver and Device Evaluation  
(See Application Note AND8020/D − Termination of ECL Logic Devices.)  
D
D
D
D
V
th  
V
th  
Figure 14. Differential Input Driven  
Single−Ended  
Figure 15. Differential Inputs Driven  
Differentially  
V
V
CC  
CC  
V
IHDmax  
V
IHmax  
V
V
CMmax  
thmax  
V
V
ILDmax  
ILmax  
V
= V  
− V  
IHD ILD  
ID  
D
D
V
V
V
V
IH  
th  
IHDtyp  
ILDtyp  
IHDmin  
V
CMR  
V
th  
D
V
IL  
V
V
V
IHmin  
ILmin  
V
V
CMmax  
thmin  
V
ILDmin  
GND  
GND  
NOTE:  
V
v V v V ; V > V  
EE IN CC IH IL  
Figure 16. Vth Diagram  
Figure 17. VCMR Diagram  
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8
 
NB7L216  
APPLICATION INFORMATION  
All NB7L216 inputs can accept PECL, CML, LVTTL, LVCMOS and LVDS signal levels. The limitations for differential  
input signal (LVDS, PECL, or CML) are minimum input swing of 75 mV and the maximum input swing of 2500 mV. Within  
these conditions, the input voltage can range from V to 1.2 V. Examples interfaces are illustrated below in a 50 W  
CC  
environment (Z = 50 W). For output termination and interface, refer to application note AND8020/D.  
Table 7. INTERFACING OPTIONS  
Interfacing Options  
CML  
Connections  
Connect VTD and VTD to V (See Figure 18)  
CC  
LVDS  
Connect VTD and VTD Together (See Figure 20)  
AC−COUPLED  
RSECL, PECL, NECL  
LVTTL, LVCMOS  
Bias VTD and VTD Inputs within Common Mode Range (V  
Standard ECL Termination Techniques (See Figure 13)  
) (See Figure 19)  
CMR  
An External Voltage (V ) should be Applied to the Unused Complementary Differential Input. Nominal  
THR  
V
V
is 1.5 V for LVTTL and V / 2 for LVCMOS Inputs. This Voltage must be within the  
Specification. (See Figure 21)  
THR  
THR  
CC  
V
V
CC  
CC  
50 W 50 W  
Z = 50 W  
Z = 50 W  
Q
D
50 W  
50 W  
VTD  
NB7L216  
CML  
Driver  
V
V
CC  
CC  
VTD  
D
Q
V
V
EE  
EE  
CC  
Figure 18. CML to NB7L216 Interface  
V
V
CC  
C
Z = 50 W  
Z = 50 W  
D
50 W  
50 W  
VTD  
V
*
PECL  
Driver  
Bias  
NB7L216  
V
*
Bias  
VTD  
D
Recommended R Values  
C
T
V
R
T
CC  
R
T
R
T
5.0 V 290 W  
3.3 V 150 W  
2.5 V 80 W  
V
V
V
EE  
EE  
EE  
*V  
must be within common mode range limits (V  
)
CMR  
Bias  
Figure 19. PECL to NB7L216 Interface  
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9
 
NB7L216  
V
V
CC  
CC  
Z = 50 W  
Z = 50 W  
D
50 W  
50 W  
VTD  
LVDS  
Driver  
NB7L216  
VTD  
D
V
V
EE  
EE  
Figure 20. LVDS to NB7L216 Interface  
V
V
CC  
CC  
Z = 50 W  
D
50 W  
50 W  
LVTTL/  
LVCMOS  
Driver  
VTD  
No Connect*  
NB7L216  
No Connect  
VTD  
Recommended V  
Values  
REF  
V
REF  
V
REF  
D
LVCMOS  
V
− V  
CC EE  
2
*or 60 pF to GND  
V
V
CC  
EE  
LVTTL 1.5 V  
Figure 21. LVCMOS/LVTTL to NB7L216 Interface  
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10  
NB7L216  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NB7L216MN  
QFN−16  
123 Units / Rail  
123 Units / Rail  
NB7L216MNG  
QFN−16  
(Pb−Free)  
NB7L216MNR2  
QFN−16  
3000 / Tape & Reel  
3000 / Tape & Reel  
NB7L216MNR2G  
QFN−16  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
11  
NB7L216  
PACKAGE DIMENSIONS  
16 PIN QFN  
CASE 485G−01  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
D
A
B
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
PIN 1  
LOCATION  
5.  
L
CONDITION CAN NOT VIOLATE 0.2 MM  
max  
MINIMUM SPACING BETWEEN LEAD TIP  
AND FLAG  
E
MILLIMETERS  
DIM MIN  
0.80  
A1 0.00  
MAX  
1.00  
0.05  
A
0.15  
C
A3  
b
D
0.20 REF  
TOP VIEW  
0.18  
0.30  
0.15  
C
3.00 BSC  
D2 1.65  
1.85  
E
3.00 BSC  
1.85  
0.50 BSC  
(A3)  
E2 1.65  
0.10  
0.08  
C
C
e
K
L
0.20  
0.30  
−−−  
0.50  
A
SEATING  
PLANE  
16 X  
SIDE VIEW  
D2  
A1  
C
SOLDERING FOOTPRINT*  
3.25  
0.128  
0.30  
0.575  
0.022  
e
L
16X  
EXPOSED PAD  
EXPOSED PAD  
5
8
NOTE 5  
0.012  
4
9
E2  
e
K
16X  
12  
1.50  
0.059  
1
3.25  
0.128  
16  
13  
16X b  
0.10  
0.05  
C
C
A
B
0.30  
0.012  
BOTTOM VIEW  
NOTE 3  
0.50  
0.02  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative  
NB7L216/D  

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