NBSG16MNR2G [ONSEMI]

2.5V/3.3V SiGe Differential Receiver/Driver with RSECL Outputs; 2.5V / 3.3V的SiGe差分接收器/驱动器输出RSECL
NBSG16MNR2G
型号: NBSG16MNR2G
厂家: ONSEMI    ONSEMI
描述:

2.5V/3.3V SiGe Differential Receiver/Driver with RSECL Outputs
2.5V / 3.3V的SiGe差分接收器/驱动器输出RSECL

线路驱动器或接收器 驱动程序和接口 接口集成电路
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NBSG16  
2.5V/3.3VꢀSiGe Differential  
Receiver/Driver with  
RSECL* Outputs  
*Reduced Swing ECL  
http://onsemi.com  
MARKING DIAGRAMS*  
Description  
The NBSG16 is a differential receiver/driver targeted for high  
frequency applications. The device is functionally equivalent to the  
EP16 and LVEP16 devices with much higher bandwidth and lower  
EMI capabilities.  
Inputs incorporate internal 50 W termination resistors and accept  
NECL (Negative ECL), PECL (Positive ECL), HSTL, LVTTL,  
LVCMOS, CML, or LVDS. Outputs are RSECL (Reduced Swing  
ECL), 400 mV.  
SG  
16  
ALYW  
FCBGA−16  
BA SUFFIX  
CASE 489  
16  
The V and V  
pins are internally generated voltage supplies  
BB  
MM  
1
available to this device only. The V is used as a reference voltage  
BB  
for single−ended NECL or PECL inputs and the V  
reference voltage for LVCMOS inputs. For all single−ended input  
conditions, the unused complementary differential input is connected  
pin is used as a  
SG  
16  
MM  
QFN−16  
MN SUFFIX  
CASE 485G  
ALYWG  
G
to V or V  
as a switching reference voltage. V or V  
may  
BB  
MM  
BB  
MM  
also rebias AC coupled inputs. When used, decouple V and V  
BB  
MM  
via a 0.01 mF capacitor and limit current sourcing or sinking to 0.5 mA.  
When not used, V and V  
outputs should be left open.  
BB  
MM  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
Features  
Maximum Input Clock Frequency > 12 GHz Typical  
Maximum Input Data Rate > 12 Gb/s Typical  
120 ps Typical Propagation Delay  
(Note: Microdot may be in either location)  
40 ps Typical Rise and Fall Times  
*For additional marking information, refer to  
Application Note AND8002/D.  
RSPECL Output with Operating Range: V = 2.375 V to 3.465 V  
CC  
with V = 0 V  
EE  
RSNECL Output with RSNECL or NECL Inputs with  
Operating Range: V = 0 V with V = −2.375 V to −3.465 V  
CC  
EE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
RSECL Output Level (400 mV Peak−to−Peak Output), Differential  
Output Only  
50 W Internal Input Termination Resistors  
Compatible with Existing 2.5 V/3.3 V LVEP, EP, and LVEL Devices  
V and V  
Reference Voltage Output  
BB  
MM  
Pb−Free Packages are Available  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 14  
NBSG16/D  
NBSG16  
V
EE  
V
BB  
V
MM  
V
EE  
1
2
3
4
Exposed Pad (EP)  
16  
15  
14  
13  
A
V
EE  
NC  
NC  
V
EE  
VTD  
D
V
CC  
1
2
3
4
12  
11  
10  
9
D
D
VTD  
VTD  
V
Q
Q
CC  
B
C
Q
Q
V
NBSG16  
D
V
CC  
VTD  
CC  
V
EE  
V
BB  
V
MM  
V
EE  
D
5
6
7
8
V
EE  
NC NC  
V
EE  
Figure 1. BGA−16 Pinout (Top View)  
Figure 2. QFN−16 Pinout (Top View)  
Table 1. PIN DESCRIPTION  
Pin  
BGA  
C2  
QFN  
Name  
VTD  
D
I/O  
Description  
1
2
Internal 50 W Termination Pin. See Table 2.  
Inverted Differential Input. Internal 75 kW to V and 36.5 kW to V  
C1  
ECL, CML,  
LVCMOS, LVDS,  
LVTTL Input  
.
CC  
EE  
B1  
B2  
3
4
D
ECL, CML,  
LVCMOS, LVDS,  
LVTTL Input  
Noninverted differential input. Internal 75 kW to V  
.
EE  
VTD  
Internal 50 W Termination Pin. See Table 2.  
A1,D1,A4, 5,8,13,16  
D4  
V
EE  
Negative Supply Voltage  
A2,A3  
B3,C3  
B4  
6,7  
9,12  
10  
NC  
No Connect  
V
CC  
Positive Supply Voltage  
Q
RSECL Output  
Noninverted Differential Output. Typically Terminated with 50 W to  
= V − 2 V  
V
TT  
CC  
C4  
D3  
11  
14  
15  
Q
RSECL Output  
Inverted Differential Output. Typically Terminated with 50 W to V = V − 2 V  
TT CC  
V
MM  
LVCMOS Reference Voltage Output. (V − V )/2  
CC EE  
D2  
V
BB  
ECL Reference Voltage Output  
Exposed Pad. (Note 2)  
N/A  
EP  
1. The NC pins are electrically connected to the die and MUST be left open.  
2. All V and V pins must be externally connected to Power Supply to guarantee proper operation. The thermally exposed pad on package  
CC  
EE  
bottom (see case drawing) must be attached to a heat−sinking conduit.  
3. In the differential configuration when the input termination pins (VTD, VTD) are connected to a common termination voltage, and if no signal  
is applied then the device will be susceptible to self−oscillation.  
http://onsemi.com  
2
 
NBSG16  
V
CC  
VTD  
V
MM  
36.5 KW  
50 W  
D
D
Q
Q
75 kW  
75 kW  
50 W  
VTD  
V
BB  
V
EE  
Figure 3. Logic Diagram  
Table 2. INTERFACING OPTIONS  
INTERFACING OPTIONS  
CONNECTIONS  
CML  
LVDS  
Connect VTD and VTD to V  
CC  
Connect VTD and VTD together  
AC−COUPLED  
Bias VTD and VTD Inputs within (V  
)
IHCMR  
Common Mode Range  
RSECL, PECL, NECL  
LVTTL  
Standard ECL Termination Techniques  
The external voltage should be applied to the  
unused complementary differential input.  
Nominal voltage is 1.5 V for LVTTL.  
LVCMOS  
V
MM  
should be connected to the unused  
complementary differential input.  
Table 3. ATTRIBUTES  
Characteristics  
Value  
75 kW  
Internal Input Pulldown Resistor (D, D)  
Internal Input Pullup Resistor (D)  
ESD Protection  
36.5 kW  
Human Body Model  
Machine Model  
> 2 kV  
> 100 V  
Moisture Sensitivity (Note 1)  
Pb Pkg  
Pb−Free Pkg  
FCBGA−16  
QFN−16  
Level 3  
Level 1  
N/A  
Level 1  
Flammability Rating  
Transistor Count  
Oxygen Index: 28 to 34  
UL 94 V−0 @ 0.125 in  
167  
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
1. For additional information, see Application Note AND8003/D.  
http://onsemi.com  
3
 
NBSG16  
Table 4. MAXIMUM RATINGS  
Symbol  
Parameter  
Condition 1  
= 0 V  
Condition 2  
Rating  
3.6  
Unit  
V
V
CC  
V
EE  
V
I
Positive Power Supply  
Negative Power Supply  
V
V
EE  
= 0 V  
−3.6  
V
CC  
Positive Input  
Negative Input  
V
V
= 0 V  
= 0 V  
V V  
3.6  
V
V
EE  
I
CC  
V V  
−3.6  
CC  
I
EE  
V
INPP  
Differential Input Voltage  
|D − D|  
V
CC  
V
CC  
− V  
− V  
w
<
2.8 V  
2.8 V  
2.8  
|V − V  
CC  
V
V
EE  
EE  
|
EE  
I
Output Current  
Continuous  
Surge  
25  
50  
mA  
mA  
out  
I
I
V
V
Sink/Source  
Sink/Source  
1
1
mA  
mA  
°C  
BB  
BB  
MM  
MM  
T
Operating Temperature Range  
Storage Temperature Range  
−40 to +85  
A
T
−65 to +150  
°C  
stg  
q
Thermal Resistance (Junction−to−Ambient) 0 LFPM  
16 FCBGA  
16 FCBGA  
16 QFN  
108  
86  
41.6  
35.2  
°C/W  
°C/W  
°C/W  
°C/W  
JA  
(Note 2)  
500 LFPM  
0 LFPM  
500 LFPM  
16 QFN  
q
Thermal Resistance (Junction−to−Case)  
Wave Solder  
1S2P (Note 2)  
2S2P (Note 3)  
16 FCBGA  
16 QFN  
5
4.0  
°C/W  
°C/W  
JC  
T
sol  
Pb  
Pb−Free  
225  
225  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
2. JEDEC standard multilayer board − 1S2P (1 signal, 2 power)  
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.  
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4
 
NBSG16  
Table 5. DC CHARACTERISTICS, INPUT WITH RSPECL OUTPUT V = 2.5 V; V = 0 V (Note 4)  
CC  
EE  
−40°C  
Typ  
25°C  
Typ  
23  
85°C  
Typ  
23  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Symbol  
Characteristic  
Unit  
mA  
mV  
mV  
V
I
EE  
Negative Power Supply Current  
Output HIGH Voltage (Note 5)  
Output Voltage Amplitude  
23  
V
V
V
1450  
350  
1530  
410  
1575  
525  
1525  
350  
1565  
410  
1600  
525  
1550  
350  
1590  
410  
1625  
525  
OH  
OUTPP  
IH  
Input HIGH Voltage  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
THR  
THR  
THR  
(Single−Ended) (Note 6)  
75 mV  
1.0*  
75 mV  
1.0*  
75 mV  
1.0*  
V
Input LOW Voltage  
(Single−Ended) (Note 6)  
V
V
1.4*  
V
V
V
1.4*  
V
V
V
1.4*  
V −  
THR  
V
IL  
EE  
CC  
THR  
EE  
CC  
THR  
EE  
CC  
75 mV  
1200  
2.5  
75 mV  
1200  
2.5  
75 mV  
1200  
2.5  
V
V
PECL Output Voltage Reference  
1080  
1.2  
1140  
1080  
1.2  
1140  
1080  
1.2  
1140  
mV  
V
BB  
Input HIGH Voltage Common  
Mode Range (Note 7)  
(Differential Configuration)  
IHCMR  
V
CMOS Output Voltage Reference  
1100  
45  
1250  
1400  
1100  
45  
1250  
1400  
1100  
45  
1250  
1400  
mV  
MM  
V
CC  
/2  
R
Internal Input Termination Resistor  
Input HIGH Current (@ V  
50  
30  
25  
55  
100  
50  
50  
30  
25  
55  
100  
50  
50  
30  
25  
55  
100  
50  
W
TIN  
I
)
IH  
mA  
mA  
IH  
IL  
I
Input LOW Current (@ V )  
IL  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
*Typicals used for testing purposes.  
4. Input and output parameters vary 1:1 with V . V can vary +0.125 V to −0.965 V.  
CC  
EE  
5. All loading with 50 W to V − 2.0 V.  
CC  
6. V  
7. V  
is the voltage applied to the complementary input, typically V or V  
.
THR  
BB  
MM  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
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5
 
NBSG16  
Table 6. DC CHARACTERISTICS, INPUT WITH RSPECL OUTPUT V = 3.3 V; V = 0 V (Note 8)  
CC  
EE  
−40°C  
Typ  
25°C  
Typ  
23  
85°C  
Typ  
23  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Symbol  
Characteristic  
Unit  
mA  
mV  
mV  
V
I
EE  
Negative Power Supply Current  
Output HIGH Voltage (Note 9)  
Output Voltage Amplitude  
23  
V
V
V
2250  
350  
2330  
410  
2375  
525  
2325  
350  
2365  
410  
2400  
525  
2350  
350  
2390  
410  
2425  
525  
OH  
OUTPP  
IH  
Input HIGH Voltage  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
THR  
THR  
THR  
(Single−Ended) (Note 10)  
75 mV  
1.0*  
75 mV  
1.0*  
75 mV  
1.0*  
V
Input LOW Voltage  
(Single−Ended) (Note 10)  
V
V
1.4*  
V
V
V
1.4*  
V
V
V
1.4*  
V −  
THR  
V
IL  
EE  
CC  
THR  
EE  
CC  
THR  
EE  
CC  
75 mV  
2000  
3.3  
75 mV  
2000  
3.3  
75 mV  
2000  
3.3  
V
V
PECL Output Voltage Reference  
1880  
1.2  
1940  
1880  
1.2  
1940  
1880  
1.2  
1940  
mV  
V
BB  
Input HIGH Voltage Common  
Mode Range (Note 11)  
(Differential Configuration)  
IHCMR  
V
CMOS Output Voltage Reference  
1500  
45  
1650  
1800  
1500  
45  
1650  
1800  
1500  
45  
1650  
1800  
mV  
MM  
V
CC  
/2  
R
Internal Input Termination Resistor  
Input HIGH Current (@ V  
50  
30  
25  
55  
100  
50  
50  
30  
25  
55  
100  
50  
50  
30  
25  
55  
100  
50  
W
TIN  
I
)
IH  
mA  
mA  
IH  
IL  
I
Input LOW Current (@ V )  
IL  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
*Typicals used for testing purposes.  
8. Input and output parameters vary 1:1 with V . V can vary +0.925 V to −0.165 V.  
CC  
EE  
9. All loading with 50 W to V − 2.0 V.  
CC  
10.V  
11. V  
is the voltage applied to the complementary input, typically V or V  
.
THR  
BB  
MM  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
http://onsemi.com  
6
 
NBSG16  
Table 7. DC CHARACTERISTICS, NECL OR RSNECL INPUT WITH NECL OUTPUT  
V
CC  
= 0 V; V = −3.465 V to −2.375 V (Note 12)  
EE  
−40°C  
Typ  
25°C  
Typ  
23  
85°C  
Typ  
23  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Min  
17  
Max  
29  
Symbol  
Characteristic  
Unit  
mA  
mV  
mV  
V
I
EE  
Negative Power Supply Current  
Output HIGH Voltage (Note 13)  
Output Voltage Amplitude  
23  
V
V
V
−1050  
350  
−970  
410  
−925  
525  
−975  
350  
−935  
410  
−900  
525  
−950  
350  
−910  
410  
−875  
525  
OH  
OUTPP  
IH  
Input HIGH Voltage  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
V
+
V
CC  
V
CC  
THR  
THR  
THR  
(Single−Ended) (Note 14)  
75 mV  
1.0*  
75 mV  
1.0*  
75 mV  
1.0*  
V
IL  
Input LOW Voltage  
V
EE  
V
CC  
V
THR  
V
EE  
V
CC  
V
THR  
V
EE  
V
CC  
V −  
THR  
V
(Single−Ended) (Note 14)  
1.4*  
75 mV  
1.4*  
75 mV  
1.4*  
75 mV  
V
V
NECL Output Voltage Reference  
−1420 −1360 −1300  
+1.2 0.0  
−1420 −1360 −1300  
+1.2 0.0  
−1420 −1360 −1300  
+1.2 0.0  
mV  
V
BB  
Input HIGH Voltage Common  
Mode Range (Note 15)  
V
V
V
EE  
IHCMR  
EE  
EE  
(Differential Configuration)  
V
MM  
CMOS Output Voltage Reference  
(Note 16)  
V
−150  
V
MMT  
V
+ 150  
V
−150  
V
MMT  
V
+ 150  
V
−150  
V
MMT  
V
+ 150  
mV  
MMT  
MMT  
MMT  
MMT  
MMT  
MMT  
R
TIN  
Internal Input Termination Resis-  
tor  
45  
50  
55  
45  
50  
55  
45  
50  
55  
W
I
I
Input HIGH Current (@ V  
)
30  
25  
100  
50  
30  
25  
100  
50  
30  
25  
100  
50  
mA  
mA  
IH  
IH  
Input LOW Current (@ V )  
IL  
IL  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
*Typicals used for testing purposes.  
12.Input and output parameters vary 1:1 with V  
.
CC  
13.All loading with 50 W to V − 2.0 V.  
CC  
14.V  
15.V  
is the voltage applied to the complementary input, typically V or V  
.
THR  
BB  
MM  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
16.V typical = |V − V |/2 + V = V  
MMT  
MM  
CC  
EE  
EE  
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7
 
NBSG16  
Table 8. AC CHARACTERISTICS for FCBGA−16  
V
CC  
= 0 V; V = −3.465 V to −2.375 V or V = 2.375 V to 3.465 V; V = 0 V  
EE CC EE  
−40°C  
25°C  
Typ  
12  
85°C  
Typ  
12  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Symbol  
Characteristic  
Maximum Frequency  
Unit  
f
10.7  
12  
10.7  
10.7  
GHz  
max  
(See Figure 4. F /JITTER) (Note 17)  
max  
t
t
,
Propagation Delay to  
Output Differential  
90  
110  
3
130  
15  
1
100  
120  
3
140  
15  
1
105  
125  
3
145  
15  
1
ps  
PLH  
PHL  
t
t
Duty Cycle Skew (Note 18)  
RMS Random Clock Jitter  
ps  
ps  
SKEW  
JITTER  
f
in  
< 10 GHz  
0.2  
0.2  
0.2  
Peak−to−Peak Data Dependent Jitter  
< 10 Gb/s  
f
in  
TBD  
TBD  
TBD  
V
Input Voltage Swing/Sensitivity  
(Differential Configuration) (Note 19)  
75  
30  
2600  
75  
75  
20  
2600  
65  
75  
20  
2600 mV  
INPP  
t
r
t
f
Output Rise/Fall Times @ 1 GHz  
(20% − 80%)  
Q, Q  
45  
40  
40  
65  
ps  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
17.Measured using a 400 mV source, 50% duty cycle clock source. All loading with 50 W to V − 2.0 V. Input edge rates 40 ps (20% − 80%).  
CC  
18.See Figure 6. t  
= |t  
− t  
PHL  
| for a nominal 50% differential clock input waveform.  
skew  
PLH  
19.V  
cannot exceed V − V  
INPP(max)  
CC EE  
Table 9. AC CHARACTERISTICS for QFN−16  
V
CC  
= 0 V; V = −3.465 V to −2.375 V or V = 2.375 V to 3.465 V; V = 0 V  
EE CC EE  
−40°C  
25°C  
Typ  
12  
85°C  
Typ  
12  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Symbol  
Characteristic  
Maximum Frequency  
(See Figure 4. F /JITTER) (Note 20)  
Unit  
f
10.7  
12  
10.7  
10.7  
GHz  
max  
max  
t
t
,
Propagation Delay to  
Output Differential  
90  
110  
3
130  
100  
120  
3
140  
95  
125  
3
145  
ps  
PLH  
PHL  
t
t
Duty Cycle Skew (Note 21)  
RMS Random Clock Jitter  
15  
2
15  
2
15  
2
ps  
ps  
SKEW  
JITTER  
f
in  
< 10 GHz  
0.2  
0.2  
0.2  
Peak−to−Peak Data Dependent Jitter  
< 10 Gb/s  
f
in  
TBD  
TBD  
TBD  
V
Input Voltage Swing/Sensitivity  
(Differential Configuration) (Note 22)  
75  
20  
2600  
50  
75  
20  
2600  
50  
75  
20  
2600 mV  
INPP  
t
r
t
f
Output Rise/Fall Times @ 1 GHz  
(20% − 80%)  
Q, Q  
30  
30  
30  
50  
ps  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
20.Measured using a 400 mV source, 50% duty cycle clock source. All loading with 50 W to V − 2.0 V. Input edge rates 40 ps (20% − 80%).  
CC  
21.See Figure 6. t  
= |t  
− t  
PHL  
| for a nominal 50% differential clock input waveform.  
skew  
PLH  
22.V  
cannot exceed V − V  
INPP(max)  
CC EE  
http://onsemi.com  
8
 
NBSG16  
700  
600  
500  
400  
300  
200  
9.5  
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
OUTPUT AMP  
Q
Q
100  
0
RMS JITTER  
0.5  
−0.5  
1
2
3
4
5
6
7
8
9
10 11 12 13 14  
INPUT FREQUENCY (GHz)  
Figure 4. Output Voltage Amplitude (VOUTPP) / RMS Jitter vs.  
Input Frequency (fin) at Ambient Temperature (Typical)  
X = 17ps/Div Y = 70 mV/Div  
Figure 5. 10.709 Gb/s Diagram (3.0 V, 255C)  
D
V
V
= V (D) − V (D)  
IH IL  
INPP  
D
Q
= V (Q) − V (Q)  
OUTPP  
OH  
OL  
Q
t
PHL  
t
PLH  
Figure 6. AC Reference Measurement  
http://onsemi.com  
9
NBSG16  
Z = 50 W  
Q
Q
D
D
o
Receiver  
Device  
Driver  
Device  
Z = 50 W  
o
50 W  
50 W  
V
TT  
V
TT  
= V − 2.0 V  
CC  
Figure 7. Typical Termination for Output Driver and Device Evaluation  
(See Application Note AND8020/D − Termination of ECL Logic Devices.)  
ORDERING INFORMATION  
Device  
Package  
FCBGA−16  
FCBGA−16  
QFN−16  
Shipping  
NBSG16BA  
100 Units / Tray (Contact Sales Representative)  
100 / Tape & Reel  
NBSG16BAR2  
NBSG16MN  
NBSG16MNG  
123 Units / Rail  
QFN−16  
(Pb−Free)  
123 Units / Rail  
NBSG16MNR2  
QFN−16  
3000 / Tape & Reel  
3000 / Tape & Reel  
NBSG16MNR2G  
QFN−16  
(Pb−Free)  
Board  
Description  
NBSG16BA Evaluation Board  
NBSG16BAEVB  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
10  
NBSG16  
PACKAGE DIMENSIONS  
FCBGA−16  
BA SUFFIX  
PLASTIC 4X4 (mm) BGA FLIP CHIP PACKAGE  
CASE 489−01  
ISSUE O  
LASER MARK FOR PIN 1  
IDENTIFICATION IN  
THIS AREA  
−X−  
D
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
3. DIMENSION b IS MEASURED AT THE MAXIMUM  
SOLDER BALL DIAMETER, PARALLEL TO DATUM  
PLANE Z.  
4. DATUM Z (SEATING PLANE) IS DEFINED BY THE  
SPHERICAL CROWNS OF THE SOLDER BALLS.  
5. PARALLELISM MEASUREMENT SHALL EXCLUDE  
ANY EFFECT OF MARK ON TOP SURFACE OF  
PACKAGE.  
M
−Y−  
E
K
M
MILLIMETERS  
0.20  
DIM MIN  
MAX  
FEDUCIAL FOR PIN A1  
IDENTIFICATION IN THIS AREA  
A
A1  
A2  
b
1.40 MAX  
0.25  
0.35  
3 X e  
4
3
2
1
1.20 REF  
0.30  
0.50  
A
D
4.00 BSC  
3
B
E
4.00 BSC  
1.00 BSC  
0.50 BSC  
e
16 X  
b
C
D
S
M
M
0.15  
0.08  
Z X  
Z
Y
S
VIEW M−M  
5
0.15 Z  
A2  
A
−Z−  
16 X  
A1  
0.10 Z  
4
DETAIL K  
ROTATED 90 CLOCKWISE  
_
http://onsemi.com  
11  
NBSG16  
PACKAGE DIMENSIONS  
16 PIN QFN  
CASE 485G−01  
ISSUE C  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
D
A
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
B
PIN 1  
LOCATION  
5.  
L
CONDITION CAN NOT VIOLATE 0.2 MM  
max  
MINIMUM SPACING BETWEEN LEAD TIP  
AND FLAG  
E
MILLIMETERS  
DIM MIN  
0.80  
A1 0.00  
MAX  
1.00  
0.05  
A
0.15  
C
A3  
b
D
0.20 REF  
TOP VIEW  
0.18  
0.30  
0.15  
C
3.00 BSC  
D2 1.65  
1.85  
E
3.00 BSC  
(A3)  
E2 1.65  
1.85  
0.10  
0.08  
C
C
e
K
L
0.50 BSC  
0.18 TYP  
0.30 0.50  
A
SEATING  
PLANE  
16 X  
SOLDERING FOOTPRINT*  
SIDE VIEW  
D2  
A1  
C
3.25  
0.128  
0.30  
0.575  
0.022  
EXPOSED PAD  
e
L
16X  
0.012  
EXPOSED PAD  
5
8
NOTE 5  
4
9
E2  
e
1.50  
0.059  
K
16X  
3.25  
0.128  
12  
1
16  
13  
16X b  
0.30  
0.012  
0.10 C A  
B
BOTTOM VIEW  
0.50  
0.02  
0.05  
C
NOTE 3  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NBSG16/D  

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