NCP51199 [ONSEMI]
DDR 2-Amp Source / Sink VTT Termination Regulator;型号: | NCP51199 |
厂家: | ONSEMI |
描述: | DDR 2-Amp Source / Sink VTT Termination Regulator 双倍数据速率 |
文件: | 总8页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCP51199, NCV51199
DDR 2-Amp Source / Sink
VTT Termination Regulator
The NCP/NCV51199 is a linear regulator designed to supply a
regulated V termination voltage for DDR−2 and DDR−3 memory
TT
applications. The regulator is capable of actively sourcing and sinking
2 A peak currents for DDR−2, and DDR−3 up to 1.5 A while
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regulating the V output voltage to within 10 mV. The output
TT
MARKING
DIAGRAM
termination voltage is regulated to track V
/ 2 by two external
DDQ
voltage divider resistors connected to the PV , GND, and V
pins.
CC
REF
8
The NCP/NCV51199 incorporates a high−speed differential
amplifier to provide ultra−fast response to line and load transients.
Other features include source/sink current limiting, soft−start and
on−chip thermal shutdown protection.
XXXXXX
ALYW
G
SOIC8−NB EP
PD SUFFIX
CASE 751BU
8
1
1
Features
• Supports DDR−2 V Termination to 2 A, DDR−3 to 1.5 A (peak)
TT
XXXXXX = Specific Device Code
A
L
= Assembly Location
= Wafer Lot
• Stable with 10 mF Ceramic Capacitance on V Output
TT
• Integrated Power MOSFETs
Y
= Year
WW
G
= Work Week
= Pb−Free Package
• High Accuracy V Output at Full−Load
TT
• Fast Transient Response
• Built−in Soft−Start
• Shutdown for Standby or Suspend Mode
• Integrated Thermal and Current−Limit Protection
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
PIN CONNECTION
1
8
PVCC
NC
NC
GND
VREF
V
CC
• These Devices are Pb−Free and are RoHS Compliant
V
TT
NC
SOIC−8 EP
Typical Applications
• SDRAM Termination Voltage for DDR−2 / DDR−3
• Motherboard, Notebook, and VGA Card Memory Termination
• Set Top Box, Digital TV, Printers
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2017 − Rev. 3
NCP51199/D
NCP51199, NCV51199
NCP51199
PV = 1.5 to 5.0 V*
CC
1
5 V
6
PV
CC
V
CC
C2
C3
R2
100k
2
3
GND
V
TT
= 0.75 to 2.5 V*
V
REF
4
V
TT
C1
R1
100k
Enable
C4
R3
*For DDR2: PV = 1.8 V, V = 0.9 V
CC
TT
DDR3: PV = 1.5 V, V = 0.75 V
CC
TT
C1 = 1 mF (Low ESR)
C2 = 470 mF (Low ESR)
C3 = 47 mF
C4 = 1000 mF + 10 mF (10 mF ceramic)
R3 = Optional V discharge resistor
N−ch MOSFET = Optional Enable / Disable
TT
Figure 1. Application Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
PVCC
Description
1
2
3
Input voltage which supplies current to the output pin. C = 470 mF with low ESR.
IN
GND
Common Ground
VREF
Buffered reference voltage input equal to ½ of VDDQ and active low shutdown pin. An external resistor
divider dividing down the PVCC voltage creates the regulated output voltage. Pulling the pin to ground
(0.15 V maximum) turns the device off.
4
VTT
Regulator output voltage capable of sourcing and sinking current while regulating the output rail.
COUT = 1000 mF + 10 mF ceramic with low ESR.
5
6
NC
True No Connect
VCC
The VCC pin is a 5 V input pin that provides internal bias to the controller. PVCC should always be kept
lower or equal to VCC
True No Connect
True No Connect
.
7
8
NC
NC
EP
Thermal Pad
Pad for thermal connection. The exposed pad must be connected to the ground plane using multiple
vias for maximum power dissipation performance.
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2
NCP51199, NCV51199
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Supply Voltage Range (V w PV ) (Note 1)
PV
V
,
−0.3 to 6
V
cc
CC
CC
CC
Output Voltage Range
Reference Input Range
V
−0.3 to 6
−0.3 to 6
125
V
V
TT
V
REF
Maximum Junction Temperature
Storage Temperature Range
T
°C
°C
kV
V
J(max)
TSTG
−65 to 150
2
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESDHBM
ESDMM
150
Lead Temperature Soldering
T
SLD
260
°C
Reflow (SMD Styles Only), Pb−Free Versions (Note 3)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating: ≤150 mA per JEDEC standard: JESD78
3. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, SO8−EP (Note 4)
°C/W
Thermal Resistance, Junction−to−Air (Note 5)
Power Rating at 25°C Ambient = 1.19 W, derate 12 mW/°C
Thermal Reference, Junction−to−Lead2 (Note 5)
R
84
20
q
JA
R
Y
JL
4. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2
2
5. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate.
OPERATING RANGES (Note 6)
Rating
Symbol
PV
Min
1.5
Max
5.5
Unit
V
Input Voltage
CC
Bias Supply Voltage
Ambient Temperature
Junction Temperature
V
4.75
−40
−40
5.25
85
V
CC
T
°C
°C
A
T
125
J
6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
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3
NCP51199, NCV51199
ELECTRICAL CHARACTERISTICS
PV = 1.8 V / 1.5 V; V = 5 V; V
= 0.9 V / 0.75 V; C
= 10 mF (Ceramic); T = +25°C, unless otherwise noted.
CC
CC
REF
OUT
A
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
REGULATOR OUTPUT
Output Offset Voltage
Load Regulation
I
= 0 A
V
−20
−10
−
−
+20
+10
mV
mV
out
OS
V
V
= 900 mV, I
= 750 mV, I
=
=
1.8 A, PV = 1.8 V
1.4 A, PV = 1.5 V
Reg
load
REF
REF
out
out
CC
CC
INPUT AND STANDBY CURRENTS
Bias Supply Current
I
= 0 A
I
−
−
0.8
1
2.5
90
mA
out
BIAS
Standby Current
V
REF
< 0.2 V (Shutdown), R
= 180W
I
STB
mA
LOAD
CURRENT LIMIT PROTECTION
PV = 1.8 V, V
= 0.9 V
2.0
1.5
−
−
3.5
3.5
CC
REF
Current Limit
I
A
V
LIM
PV = 1.5 V, V
= 0.75 V
CC
REF
SHUTDOWN THRESHOLDS
Enable
Shutdown
V
0.6
−
−
−
−
IH
Shutdown Threshold Voltage
V
0.15
IL
THERMAL SHUTDOWN
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
V
V
= 5 V
= 5 V
T
160
35
168
35
176
40
°C
°C
CC
SD
T
SH
CC
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4
NCP51199, NCV51199
TYPICAL CHARACTERISTICS
0.915
0.910
0.905
0.770
PV = 1.5 V, V = 5 V
CC
CC
PV = 1.8 V, V = 5 V
CC
CC
0.765
0.760
0.755
0.750
0.745
0.740
0.900
0.895
0.890
0.885
0.880
0.735
0.730
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 2. Output Voltage vs. Temperature
Figure 3. Output Voltage vs. Temperature
0.60
0.55
1.2
1.0
0.8
0.6
PV = 1.8 V, V = 5 V
CC
CC
V
CC
= 5 V
0.50
0.45
0.40
0.35
0.30
Enabled
Shutdown
0.4
0.2
0.25
0.20
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 4. Shutdown Threshold vs.
Temperature
Figure 5. VCC Current vs. Temperature
3.0
2.5
2.0
1.5
1.0
3.5
3.0
2.5
PV = 1.8 V, V = 5 V
CC
CC
2.0
1.5
1.0
PV = 1.8 V, V = 5 V
CC
CC
PV = 1.5 V, V = 5 V
CC
CC
0.5
0
0.5
0
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 6. PVCC Current vs. Temperature
Figure 7. Source Current Limits vs.
Temperature
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5
NCP51199, NCV51199
TYPICAL CHARACTERISTICS
20
15
10
5
3.5
3.0
2.5
2.0
1.5
1.0
0
−5
PV = 1.8 V, V = 5 V
CC
CC
−10
PV = 1.5 V, V = 5 V
CC
CC
0.5
0
−15
−20
−50
−25
0
25
50
75
100
125
TIME (100 msec / div)
TEMPERATURE (°C)
Figure 9. 1.25 V, + 1.6 A Transient Response
Figure 8. Sink Current Limits vs. Temperature
Table 1. ORDERING INFORMATION
Device
†
Marking
51199
Package
Shipping
NCP51199PDR2G
SOIC−8
(Pb-Free)
2500 / Tape & Reel
NCV51199PDR2G*
V51199
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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6
NCP51199, NCV51199
PACKAGE DIMENSIONS
SOIC8−NB EP
CASE 751BU
ISSUE E
D
NOTES:
NOTE 5
A
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
F
2X
8
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.10mm IN EXCESS OF MAXIMUM MATERIAL
CONDITION.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH,
PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER SIDE. DIMENSION E DOES
NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. DIMENSIONS D AND E ARE DETERMINED AT
DATUM F.
0.10 C D
5
NOTE 6
A1
E
E1
NOTE 4
L2
2X 4 TIPS
L
SEATING
PLANE
C
0.20
C
4
DETAIL A
1
8X b
B
NOTE 5
M
0.25
C
A-B D
TOP VIEW
5. DIMENSIONS A AND B ARE TO BE DETERMINED
AT DATUM F.
2X
6. A1 IS DEFINED AS THE VERTICAL DISTANCE
FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. TAB CONTOUR MAY VARY MINIMALLY TO INCLUDE
TOOLING FEATURES.
0.10
C
A-B
NOTE 4
DETAIL A
h
D
8X
0.10
C
0.10
C
B
B
MILLIMETERS
DIM MIN
MAX
1.75
0.10
0.51
0.48
0.25
0.23
A
A1
b
b1
c
c1
D
E
E1
e
F
G
h
L
1.35
0.00
0.31
0.28
0.17
0.17
A
e
END VIEW
SEATING
PLANE
C
SIDE VIEW
NOTE 7
4.90 BSC
F
b
6.00 BSC
3.90 BSC
1.27 BSC
b1
G
1.55
2.39
2.39
0.50
1.27
c c1
SECTION B−B
1.55
0.25
0.40
L2
0.25 BSC
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2.60
2.60
8X
1.52
7.00
1
8X
0.76
1.27
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NCP51199, NCV51199
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◊
NCP51199/D
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