NCV7446MW0R2G [ONSEMI]

Dual CAN FD Transceiver, High Speed, Low Power;
NCV7446MW0R2G
型号: NCV7446MW0R2G
厂家: ONSEMI    ONSEMI
描述:

Dual CAN FD Transceiver, High Speed, Low Power

电信 光电二极管 电信集成电路
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Dual CAN FD Transceiver,  
High Speed, Low Power  
NCV7446  
Description  
NCV7446 is a dual CAN FD physical layer transceiver. It allows  
interfacing of two independent CAN physical buses and two  
independent CAN protocol controllers. The transceivers provide  
differential transmit capability to the bus and differential receive  
capability to the CAN controllers.  
It is consisted of two fully independent NCV7344 transceivers. The  
NCV7446 guarantees additional timing parameters to ensure robust  
communication at data rates beyond 1 Mbps to cope with CAN  
flexible data rate requirements (CAN FD). These features make the  
NCV7446 an excellent choice for all types of HSCAN networks, in  
nodes that require a lowpower mode with wakeup capability via the  
CAN bus.  
www.onsemi.com  
MARKING  
DIAGRAM  
NV74  
460  
ALYW  
G
1
DFNW14  
CASE 507AC  
Features  
NV74460 = Specific Device Code  
A
L
Y
W
G
= Assembly Site  
= Wafer Lot  
= Year of Production, Last Number  
= Work Week Number  
= PbFree Package  
Compliant with the ISO 118982:2016  
CAN FD Timing Specified up to 5 Mbps  
Very Low Current Standby Mode with Wakeup via the Bus  
Low Electromagnetic Emission (EME) and High Electromagnetic  
Immunity  
No Disturbance of the Bus Lines with an Unpowered Node  
PIN CONNECTIONS  
Transmit Data (TxD) Dominant Timeout Function  
Under All Supply Conditions the Chip Behaves Predictably  
Very High ESD Robustness of Bus Pins  
Thermal Protection  
Bus Pins Short Circuit Proof to Supply Voltage and Ground  
Bus Pins Protected Against Transients in an Automotive  
Environment  
TxD1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
STB1  
GND1  
VCC1  
RxD1  
TxD2  
CANH1  
CANL1  
STB2  
CANH2  
CANL2  
RxD2  
GND2  
VCC2  
Quality  
8
Wettable Flank Package for Enhanced Optical Inspection  
AECQ100 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 12 of this data sheet.  
Compliant  
Typical Applications  
Automotive  
Industrial Networks  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
December, 2019 Rev. 2  
NCV7446/D  
NCV7446  
BLOCK DIAGRAM  
VCC1  
3
VCC1  
NCV7446  
13  
Thermal  
CANH1  
CANL1  
shutdown  
1
TxD1  
STB1  
Timer  
VCC1  
Mode &  
12  
Driver control  
14  
Wake up  
control  
4
2
Wake up  
RxD1  
COMP  
Filter  
GND1  
COMP  
Channel1  
11  
STB2  
TxD2  
5
6
CANH2  
CANL2  
10  
9
GND2  
VCC2  
Channel2  
7
8
RxD2  
Figure 1. NCV7446 Block Diagram  
www.onsemi.com  
2
NCV7446  
TYPICAL APPLICATION DIAGRAM  
VBAT  
IN  
OUT  
5V reg  
VCC  
VCC1  
VCC2  
3
7
13  
STB1  
TxD1  
RxD1  
14  
1
CANH1  
CAN  
BUS  
4
CANL1  
CANH2  
Micro−  
12  
10  
.
controller  
STB2  
TxD2  
RxD2  
11  
5
CAN  
BUS  
8
CANL2  
9
2
6
GND1 GND2  
GND  
Figure 2. NCV7446 Application Diagram  
Table 1. PIN FUNCTION DESCRIPTION  
Pin Number  
Pin Name  
TxD1  
Description  
1
2
Transmit data input for channel 1; low input Ù dominant driver; internal pullup current  
Ground for channel 1  
GND1  
3
V
CC1  
Supply voltage for channel 1  
4
RxD1  
TxD2  
GND2  
Receive data output for channel 1; dominant transmitter Ù low output  
Transmit data input for channel 2; low input Ù dominant driver; internal pullup current  
Ground for channel 2  
5
6
7
V
CC2  
Supply voltage for channel 2  
8
RxD2  
CANL2  
Receive data output for channel 2; dominant transmitter Ù low output  
Lowlevel CAN bus line channel 2 (low in dominant mode)  
Highlevel CAN bus line channel 2 (high in dominant mode)  
Standby mode control input for channel 2; internal pullup current  
Lowlevel CAN bus line channel 1 (low in dominant mode)  
Highlevel CAN bus line channel 1 (high in dominant mode)  
Standby mode control input for channel 1; internal pullup current  
Recommended to connect to GND or left floating in application  
9
10  
11  
12  
13  
14  
EP  
CANH2  
STB2  
CANL1  
CANH1  
STB1  
Exposed Pad  
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3
NCV7446  
FUNCTIONAL DESCRIPTION  
Standby Mode  
Operating Modes  
NCV7446 provides two modes of operation per  
transceiver as illustrated in Table 2. These modes are  
selectable through pins STB1 and STB2 independently for  
each transceiver.  
In standby mode both the transmitter and receiver are  
disabled and a very lowpower differential receiver  
monitors the bus lines for CAN bus activity. The bus lines  
are biased to ground and supply current is reduced to a  
minimum. When a wakeup request is detected by the  
lowpower differential receiver, the signal is first filtered  
and then verified as a valid wake signal after a time period of  
twake_filt, the corresponding RxDx pin is driven low by the  
transceiver (following the bus) to inform the controller of  
the wakeup request.  
Table 2. OPERATING MODES  
Pins  
Mode  
Pins RxDx  
STBx  
Low when bus  
dominant  
High when bus  
recessive  
Low  
Normal  
Follows the bus  
when wakeup  
detected  
High when no  
wakeup re-  
Wakeup  
High  
Standby  
quest detected  
When a valid wakeup pattern (phase in order  
dominant recessive dominant) is detected during the  
standby mode the RxDx pins follows the bus. Minimum  
length of each phase is t  
Pattern must be received within t  
Normal Mode  
– see Figure 3.  
wake_filt  
In the normal mode, the selected transceiver is able to  
communicate via the bus lines. The signals are transmitted  
and received to the CAN controller via the pins TxDx and  
RxDx. The slopes on the bus lines outputs are optimized to  
give low EME.  
to be recognized  
wake_to  
as valid wakeup otherwise internal logic is reset.  
twake_filt  
twake_filt  
twake_filt  
CANHx  
CANLx  
< twake_to  
tdwakerd tdwakedr  
RxDx  
Figure 3. NCV7446 Wakeup behavior  
www.onsemi.com  
4
 
NCV7446  
Overtemperature Detection  
This TxD dominant timeout time t  
defines  
dom(TxD)  
the minimum possible bit rate to 17 kbps.  
A thermal protection circuit protects the IC from damage  
by switching off the affected transmitter if the junction  
temperature exceeds a value of approximately 170°C.  
Because the transmitter dissipates most of the power, the  
power dissipation and temperature of the IC is reduced. All  
other IC functions continue to operate. The transmitter  
offstate resets when the temperature decreases below  
the shutdown threshold and pins TxDx goes high.  
The thermal protection circuit is particularly needed when  
a bus line short circuits.  
Fail Safe Features  
A currentlimiting circuit protects the transmitter output  
stage from damage caused by accidental short circuit  
to either positive or negative supply voltage, although  
power dissipation increases during this fault condition.  
Undervoltage on V  
or V  
pins prevents the chip  
CC2  
CC1  
sending data on the bus when there is not enough V supply  
voltage.  
CC  
After supply is recovered, corresponding TxD pin must be  
first released to high to allow sending dominant bits again.  
Recovery time from undervoltage detection is equal to  
td(stbnm) time.  
The pins CANHx and CANLx are protected from  
automotive electrical transients (according to ISO 7637; see  
Figure 5). Pins TxDx and STBx are pulled high internally  
should the input become disconnected. Pins TxDx, STBx  
and RxDx will be floating, preventing reverse supply should  
the adjacent VCCx supply be removed.  
TxDx Dominant Timeout Function  
A TxD dominant timeout timer circuit prevents the bus  
lines being driven to a permanent dominant state (blocking  
all network communication) if pins TxDx are forced  
permanently low by a hardware and/or software application  
failure. The timer is triggered by a negative edge on pins  
TxDx. If the duration of the lowlevel on pins TxDx exceeds  
the internal timer value t  
, the transmitter is  
dom(TxD)  
disabled, driving the bus into a recessive state. The timer is  
reset by a positive edge on pins TxDx.  
www.onsemi.com  
5
NCV7446  
ELECTRICAL CHARACTERISTICS  
Definitions  
All voltages are referenced to GNDx (pin 2 or pin 6).  
Positive currents flow into the IC. Sinking current means the  
current is flowing into the pin; sourcing current means the  
current is flowing out of the pin.  
Table 3. ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Conditions  
Min  
0.3  
42  
42  
42  
Max  
+6  
Unit  
V
V
SUP  
Supply voltage V  
V
CC1, CC2  
V
CANH  
DC voltage at pins CANHx  
DC voltage at pins CANLx  
0 < V  
0 < V  
< 5.25 V; no time limit  
< 5.25 V; no time limit  
+42  
+42  
+42  
V
CCX  
V
V
CANL  
CANHCANL  
CCX  
V
DC voltage between any two pins  
(including CANHx and CANLx)  
V
V
DC Voltage at pins TxDx, STBx  
DC Voltage at pin RxDx  
0.3  
0.3  
8  
+6  
V
V
IN  
V
OUT  
V
+ 0.3  
CCx  
V
Electrostatic discharge voltage at all pins,  
Component HBM  
(Note 1)  
(Note 2)  
+8  
kV  
esdHBM  
V
Electrostatic discharge voltage at all pins,  
Component CDM  
750  
+750  
V
esdCDM  
V
Electrostatic discharge voltage at pins CANHx  
and CANLx, System HBM (Note 4)  
Without bus filter (Note 3)  
With bus filter (Note 3)  
test pulses 1  
7  
11  
+7  
kV  
kV  
V
esdIEC  
+11  
V
Voltage transients, pins CANHx, CANLx.  
According to ISO76373, Class C (Note 4)  
100  
schaff  
test pulses 2a  
+75  
V
test pulses 3a  
150  
V
test pulses 3b  
+100  
150  
V
Latchup  
Static latchup at all pins  
(Note 5)  
mA  
°C  
°C  
T
stg  
Storage temperature  
55  
40  
+150  
+170  
T
Maximum junction temperature  
Moisture Sensitivity Level  
J
MSL  
1
T
SLD  
Lead temperature Soldering Reflow (Note 11)  
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Standardized human body model electrostatic discharge (ESD) pulses in accordance to EIAJESD22. Equivalent to discharging a 100 pF  
capacitor through a 1.5 kW resistor.  
2. Standardized charged device model ESD pulses when tested according to AECQ100011.  
3. System human body model electrostatic discharge (ESD) pulses in accordance to IEC 6100042. Equivalent to discharging a 150 pF  
capacitor through a 330 W resistor referenced to GNDx.  
4. Results were verified by external test house.  
5. Static latchup immunity: Static latchup protection level when tested according to EIA/JESD78.  
6. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D  
Table 4. THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Conditions  
Value  
101  
53  
Unit  
K/W  
K/W  
K/W  
K/W  
R
Thermal Resistance JunctiontoAir, JEDEC 1S0P PCB  
Thermal Resistance JunctiontoAir, JEDEC 2S2P PCB  
Thermal Resistance JunctiontoAir  
Free air; (Note 8)  
Free air; (Note 9)  
Free air; (Note 10)  
Free air; (Note 11)  
q
q
q
q
JA_1  
JA_2  
JA_3  
JA_4  
R
R
R
76  
Thermal Resistance JunctiontoAir  
46  
7. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe  
Operating parameters.  
8. Test board according to EIA/JEDEC Standard JESD513, signal layer with 10% trace coverage.  
9. Test board according to EIA/JEDEC Standard JESD517, signal layers with 10% trace coverage.  
10.Test board according to EIA/JEDEC Standard JESD513 and JESD515 , signal layer with 10% trace coverage and with thermal via array  
under the exposed pad connected to the second copper layer.  
11. Test board according to EIA/JEDEC Standard JESD515 and JESD517, signal layers with 10% trace coverage and thermal via array under  
the exposed pad connected to the first inner copper layer.  
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6
 
NCV7446  
Table 5. ELECTRICAL CHARACTERISTICS  
V
V
= 4.75 V to 5.25 V; T = 40°C to +150°C; R = 60 W, C = 100 pF, C not used, C  
= 15 pF, unless specified otherwise.  
CC1, CC2  
J
LT  
LT  
1
RxD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
SUPPLY (PINS V  
)
CCX  
V
Power supply voltage  
(Note 12)  
4.75  
20  
5.0  
45  
5.0  
5.25  
55  
V
CCx  
CCx  
I
Supply current on single channel  
Dominant; V  
= Low  
= Low  
mA  
mA  
mA  
TxDx  
Recessive; V  
1.9  
2.0  
10  
TxDx  
Normal mode, Dominant;  
= 0 V; one of bus wires  
105  
V
TxDx  
shorted; 3 V (V  
,
CANHx  
V
CANLx  
) +18 V  
I
Supply current in standby mode on  
single channel  
T 100°C, (Note 13)  
J
10  
15  
mA  
CCSx  
V
Standby undervoltage detection V  
pins  
3.5  
2.0  
4.0  
2.3  
4.3  
2.6  
V
V
UVD(VCC)(stby)  
CCx  
V
Switchoff undervoltage detection V  
pins  
CCx  
UVD(VCC)(swoff)  
TRANSMITTER DATA INPUT (Pins TxDx)  
V
Highlevel input voltage  
Lowlevel input voltage  
Highlevel input current  
Lowlevel input current  
Input capacitance  
Output recessive  
Output dominant  
2.0  
V
IH  
V
+0.8  
+5.0  
70  
10  
V
IL  
I
IH  
V
TxDx  
V
TxDx  
= V  
CCx  
5.0  
300  
0
mA  
mA  
pF  
I
IL  
= 0 V  
150  
5
C
(Note 13)  
i
TRANSMITTER MODE SELECT (Pins STBx)  
V
Highlevel input voltage  
Lowlevel input voltage  
Highlevel input current  
Lowlevel input current  
Input capacitance  
Standby mode  
Normal mode  
2.0  
0
5
V
IH  
V
+0.8  
+1.0  
1.0  
10  
V
IL  
I
IH  
V
STBx  
V
STBx  
= V  
CCx  
1.0  
15  
mA  
mA  
pF  
I
IL  
= 0 V  
C
(Note 13)  
i
RECEIVER DATA OUTPUT (Pins RxDx)  
I
Highlevel output current  
Normal mode  
8.0  
3.0  
1.0  
mA  
mA  
OH  
V
= V  
– 0.4 V  
RxDx  
CCx  
I
Lowlevel output current  
V
RxDx  
= 0.4 V  
1.0  
6.0  
12  
OL  
BUS LINES (Pins CANHx and CANLx)  
I
Recessive output current at pins  
CANHx and CANLx  
27 V < V  
, V <  
CANLx  
5.0  
5.0  
2.0  
0
+5.0  
+5.0  
3.0  
mA  
mA  
V
o(rec)  
CANHx  
+32 V; Normal mode  
I
LI  
Input leakage current  
0 W < R(V  
to GNDx) <  
CCx  
1 MW; V  
= V  
= 5 V  
CANLx  
CANHx  
V
Recessive output voltage at pins CANHx  
Recessive output voltage at pins CANLx  
Recessive output voltage at pin CANHx  
Recessive output voltage at pin CANLx  
Normal mode, V  
= High;  
2.5  
2.5  
o(rec)(CANH)  
TxDx  
R
and C not used  
LT  
LT  
V
Normal mode, V  
= High;  
2.0  
3.0  
V
o(rec)(CANL)  
TxDx  
R
and C not used  
LT  
LT  
V
Standby mode; R and C  
not used  
0.1  
0.1  
0.2  
2.75  
0.5  
+0.1  
+0.1  
+0.2  
4.5  
V
o(off)(CANH)  
LT  
LT  
LT  
LT  
V
Standby mode; R and C  
not used  
V
o(off)(CANL)  
LT  
V
Differential bus output voltage  
Standby mode; R and C  
not used  
V
o(off)(CANL)  
LT  
(VCANHx * VCANLx)  
V
Dominant output voltage at pins CANHx  
V
= 0 V; t < tdom(TxD);  
3.5  
1.5  
V
o(dom)(CANH)  
TxDx  
50 W < R < 65 W  
LT  
= 0 V; t < tdom(TxD);  
TxDx  
V
Dominant output voltage at pins CANLx  
V
2.25  
V
o(dom)(CANL)  
50 W < R < 65 W  
LT  
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7
 
NCV7446  
Table 5. ELECTRICAL CHARACTERISTICS  
V
V
= 4.75 V to 5.25 V; T = 40°C to +150°C; R = 60 W, C = 100 pF, C not used, C  
= 15 pF, unless specified otherwise.  
CC1, CC2  
J
LT  
LT  
1
RxD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
BUS LINES (Pins CANHx and CANLx)  
V
Differential bus output voltage  
V
= 0 V; dominant;  
LT  
1.5  
50  
1.5  
0.9  
2.25  
0
3.0  
+50  
5.0  
1.1  
V
mV  
V
o(dom)(diff)  
TxDx  
(V V  
)
45 W < R < 65 W  
CANHx  
CANLx  
V
Differential bus output voltage  
(V V  
V
= High; recessive; no  
o(rec)(diff)  
TxDx  
)
CANLx  
load  
CANHx  
V
Differential bus output voltage during  
arbitration (V V  
R
2.24kW (Note 13)  
LT =  
o(dom)(diff)_arb  
)
CANLx  
CANHx  
V
Dominant output voltage driver symmetry  
(VCANHx + VCANLx)  
RLT = 60W; C1 = 4.7 nF; C  
not used; TxDx = square  
wave up to 1 MHz  
1.0  
VCCx  
o(dom)(sym)  
LT  
I
Short circuit output current at pins CANHx  
Short circuit output current at pins CANLx  
3 V < V  
3 V < V  
< +18 V  
< +36 V  
100  
1.5  
3.0  
1.5  
100  
0.5  
mA  
mA  
V
o(sc)(CANH)  
CANHx  
CANLx  
I
o(sc)(CANL)  
V
Differential input voltage range recessive  
state  
Normal mode;  
i(rec)(diff)_NM  
12 V V  
,
CANHx  
V
CANLx  
+12 V; no load  
V
Standby mode;  
12 V V  
CANLx  
3.0  
0.9  
0.4  
8.0  
8.0  
V
V
V
i(rec)(diff)_LP  
,
CANHx  
V
+12 V; no load  
V
Differential input voltage range dominant  
state  
Normal mode;  
i(dom)(diff)_NM  
12 V V  
CANLx  
,
CANHx  
V
+12 V; no load  
V
Standby mode;  
12 V V  
1.05  
i(dom)(diff)_LP  
,
CANHx  
+12 V; no load  
V
CANLx  
V
Differential receiver threshold voltage in  
normal mode  
12 V V  
12 V V  
+12 V;  
+12 V  
0.5  
0.4  
0.4  
15  
0.9  
1.0  
1.05  
37  
V
V
i(diff)(th)_NORM  
CANLx  
CANHx  
V
Differential receiver threshold voltage in  
normal mode, extended range  
30 V < V  
30 V < V  
< +35 V;  
< +35 V  
i(diff)(th)_NORM_H  
CANLx  
CANHx  
V
Differential receiver threshold voltage in  
standby mode  
12 V V  
12 V V  
+12 V;  
+12 V  
V
i(diff)(th)_STDBY  
CANLx  
CANHx  
R
Commonmode input resistance at pin  
CANHx  
2 V V  
2 V V  
+7 V;  
+7 V  
26  
26  
0
kW  
kW  
%
i(cm)(CANH)  
CANLx  
CANHx  
R
Commonmode input resistance at pin  
CANLx  
2 V V  
2 V V  
+7 V;  
+7 V  
15  
37  
i(cm)(CANL)  
CANLx  
CANHx  
R
Matching between pin CANHx and pin  
CANLx common mode input resistance  
V
= V = +5 V  
CANLx  
1  
25  
+1  
i(cm)(m)  
CANHx  
R
Differential input resistance  
2 V V  
2 V V  
+7 V;  
+7 V  
50  
75  
kW  
i(diff)  
CANLx  
CANHx  
C
Input capacitance at pins CANHx  
Input capacitance at pins CANLx  
Differential input capacitance  
V
TxDx  
V
TxDx  
V
TxDx  
= High; (Note 13)  
= High; (Note 13)  
= High; (Note 13)  
4.5  
4.5  
20  
20  
10  
pF  
pF  
pF  
i(CANH)  
C
i(CANL)  
C
3.75  
i(diff)  
THERMAL SHUTDOWN  
Shutdown junction temperature per channel  
TIMING CHARACTERISTICS (see Figure 4 and Figure 6)  
T
J(sd)  
Junction temperature rising  
160  
180  
200  
°C  
t
t
Delay TxDx to bus active  
Delay TxDx to bus inactive  
Delay bus active to RxDx  
Delay bus inactive to RxDx  
75  
85  
ns  
ns  
ns  
ns  
ns  
d(TxDBUSon)  
d(TxDBUSoff)  
d(BUSonRxD)  
d(BUSoffRxD)  
t
t
24  
32  
t
Propagation delay TxDx to RxDx  
dominant to recessive transition  
50  
100  
210  
pd_dr  
www.onsemi.com  
8
NCV7446  
Table 5. ELECTRICAL CHARACTERISTICS  
V
V
= 4.75 V to 5.25 V; T = 40°C to +150°C; R = 60 W, C = 100 pF, C not used, C  
= 15 pF, unless specified otherwise.  
CC1, CC2  
J
LT  
LT  
1
RxD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TIMING CHARACTERISTICS (see Figure 4 and Figure 6)  
t
Propagation delay TxDx to RxDx  
recessive to dominant transition  
50  
120  
210  
ns  
pd_rd  
t
Delay standby mode to normal mode  
5.0  
0.5  
0.5  
11  
20  
5.0  
6.0  
ms  
ms  
ms  
d(stbnm)  
t
Dominant time for wakeup via bus  
wake_filt  
t
Delay to flag wake event  
(recessive to dominant transitions)  
Valid bus wakeup event  
Valid bus wakeup event  
Standby mode  
2.6  
dwakerd  
t
Delay to flag wake event  
(dominant to recessive transitions)  
0.5  
2.6  
6.0  
ms  
dwakedr  
t
Bus time for wakeup timeout  
TxDx dominant time for timeout  
Bit time on RxDx pin  
1.0  
1.0  
10  
10  
ms  
ms  
ns  
wake_to  
t
V
TxDx  
= 0 V; Normal mode  
dom(TxD)  
t
t
t
t
= 500 ns  
= 200 ns  
= 500 ns  
400  
120  
435  
550  
220  
530  
Bit(RxD)  
Bit(TxD)  
Bit(TxD)  
Bit(TxD)  
ns  
t
Bit time on bus (CANHx – CANLx pin)  
ns  
Bit(Vi(diff))  
t
= 200 ns  
155  
210  
ns  
Bit(TxD)  
Dt  
Rec  
Receiver timing symmetry  
Rec = Bit(RxD) Bit(Vi(diff))  
t
t
= 500 ns  
= 200 ns  
65  
45  
+40  
+15  
ns  
ns  
Bit(TxD)  
Dt  
t
t
;
Bit(TxD)  
12.In the range of 4.5 V to 4.75 V and from 5.25 V to 5.5 V the chip is fully functional; some parameters may be outside of the specification.  
13.Values based on design and characterization, not tested in production.  
MEASUREMENT SETUPS AND DEFINITIONS  
0.7 × V  
IO  
1
TxDx  
0.3 × V  
0.3 × V  
IO  
IO  
tpd_rd  
tbit(TxD)  
td(TxDBUSon)  
5 × t  
bit(TxD)  
td(BUSonRxD)  
900 mV  
Vi(diff)= VCANHx VCANLx  
500 mV  
tbit(Vi(diff))  
td(BUSoffRxD)  
td(TxDBUSoff)  
tpd_dr  
0.7 × V  
IO  
RxDx  
0.3 × V  
IO  
1
TxDx Edge length below 10 ns  
tbit(RxD)  
Figure 4. Transceiver Timing Diagram  
www.onsemi.com  
9
 
NCV7446  
+5 V  
100 nF  
VCC1  
VCC2  
3
5
CANH1  
1 nF  
13  
TxD1  
TxD2  
1
5
Transient  
Generator  
RxD1  
1 nF  
4
12  
NCV7446  
CANL1  
CANH2  
1 nF  
15 pF  
15 pF  
10  
RxD2  
Transient  
Generator  
8
1 nF  
9
6
CANL2  
14  
11  
2
STB1 STB2 GND1 GND2  
Figure 5. Test Circuit for Automotive Transients  
+5 V  
100 nF  
VCC1  
VCC2  
3
5
CANH1  
13  
TxD1  
TxD2  
RLT /2  
4.7 nF  
1
5
CLT  
100 pF  
C1  
RxD1  
RLT /2  
4
12  
10  
NCV7446  
CANL1  
2x 30 W  
CANH2  
15 pF  
15 pF  
RLT /2  
4.7 nF  
CLT  
RxD2  
8
100 pF  
C1  
RLT /2  
9
6
CANL2  
2x 30 W  
14  
11  
2
STB1 STB2 GND1 GND2  
Figure 6. Test Circuit for Timing Characteristics  
www.onsemi.com  
10  
NCV7446  
Table 6. ISO 118982:2016 PARAMETER CROSSREFERENCE TABLE  
ISO 118982:2016 Specification  
NCV7446 Datasheet  
Symbol  
Parameter  
Notation  
Dominant output characteristics  
Single ended voltage on CAN_H  
V
V
o(dom)(CANH)  
CAN_H  
Single ended voltage on CAN_L  
V
CAN_L  
V
o(dom)(CANL)  
Differential voltage on normal bus load  
Differential voltage on effective resistance during arbitration  
Differential voltage on extended bus load range (optional)  
Driver symmetry  
V
Diff  
V
Diff  
V
Diff  
V
o(dom)(diff)  
V
o(dom)(diff)_arb  
V
o(dom)(diff)  
Driver symmetry  
V
V
SYM  
o(dom)(sym)  
I
o(SC)(CANH)  
Driver output current  
Absolute current on CAN_H  
I
CAN_H  
Absolute current on CAN_L  
I
I
o(SC)(CANL)  
CAN_L  
Receiver output characteristics, bus biasing active  
Single ended output voltage on CAN_H  
Single ended output voltage on CAN_L  
Differential output voltage  
V
V
o(rec)(CANH)  
CAN_H  
V
V
o(rec)(CANL)  
CAN_L  
V
Diff  
V
o(rec)(diff)  
Receiver output characteristics, bus biasing inactive  
Single ended output voltage on CAN_H  
Single ended output voltage on CAN_L  
Differential output voltage  
V
V
o(off)(CANH)  
CAN_H  
V
V
o(off)(CANL)  
CAN_L  
V
Diff  
V
o(off)(dif)  
Optional transmit dominant timeout  
Transmit dominant timeout, long  
t
t
t
dom(TxD)  
dom  
Transmit dominant timeout, short  
NA  
dom  
Static receiver input characteristics, bus biasing active  
Recessive state differential input voltage range  
Dominant state differential input voltage range  
Static receiver input characteristics, bus biasing inactive  
Recessive state differential input voltage range  
Dominant state differential input voltage range  
Receiver input resistance  
V
V
V
i(rec)(diff)_NM  
Diff  
V
Diff  
i(dom)(diff)_NM  
V
V
V
Diff  
i(rec)(diff)_LP  
V
Diff  
i(dom)(diff)_LP  
Differential internal resistance  
R
R
Diff  
i(diff)  
R
i(cm)(CANH)  
Single ended internal resistance  
R
CAN_H  
R
R
CAN_L  
i(cm)(CANL)  
Receiver input resistance matching  
Matching a of internal resistance  
Implementation loop delay requirement  
Loop delay  
m
R
i(cm)(m)  
R
t
t
Loop  
pd_rd  
pd_dr  
t
Optional implementation data signal timing requirements for use with bit rates above 1 Mbit/s and up to 2 Mbit/s  
Transmitted recessive bit width @ 2 Mbit/s  
Received recessive bit width @ 2 Mbit/s  
Receiver timing symmetry @ 2 Mbit/s  
t
t
Bit(Vi(diff))  
Bit(Bus)  
t
t
Bit(RxD)  
Bit(RXD)  
Dt  
Rec  
D
tRec  
www.onsemi.com  
11  
NCV7446  
Table 6. ISO 118982:2016 PARAMETER CROSSREFERENCE TABLE  
ISO 118982:2016 Specification  
NCV7446 Datasheet  
Symbol  
Parameter  
Notation  
Optional implementation data signal timing requirements for use with bit rates above 2 Mbit/s and up to 5 Mbit/s  
Transmitted recessive bit width @ 5 Mbit/s  
Transmitted recessive bit width @ 5 Mbit/s  
Received recessive bit width @ 5 Mbit/s  
t
t
Bit(Vi(diff))  
Bit(Bus)  
t
t
Bit(RxD)  
Bit(RXD)  
Dt  
Rec  
Dt  
Rec  
Maximum ratings of V  
, V and V  
CAN_L Diff  
CAN_H  
Maximum rating V  
V
Diff  
V
CANHCANL  
Diff  
General maximum rating V  
and V  
V
V
CANH  
CAN_H  
CAN_L  
CAN_H  
V
CAN_L  
V
CANL  
Optional: Extended maximum rating V  
and V  
V
NA  
CAN_H  
CAN_L  
CAN_H  
V
CAN_L  
Maximum leakage currents on CAN_H and CAN_L, unpowered  
Leakage current on CAN_H, CAN_L  
I
I
LI  
CAN_H  
CAN_L  
I
Bus biasing control timings  
CAN activity filter time, long  
t
t
t
wake_filt  
Filter  
CAN activity filter time, short  
NA  
Filter  
Wakeup timeout, short  
t
t
NA  
Wake  
Wake  
Wakeup timeout, long  
t
wake_to  
Timeout for bus inactivity (Required for selective wakeup implementation only)  
Bus Bias reaction time (Required for selective wakeup implementation only)  
t
NA  
Silence  
t
NA  
Bias  
ORDERING INFORMATION  
Device  
Description  
Package  
Shipping  
NCV7446MW0R2G  
Dual CAN FD Transceiver, High Speed, Low Power  
DFNW14  
(PbFree)  
5000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
12  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DFNW14 4.5x3, 0.65P  
CASE 507AC  
ISSUE D  
1
DATE 03 JUL 2018  
SCALE 2:1  
NOTES:  
L3  
L3  
A B  
D
1. DIMENSIONS AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMESNION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
5. THIS DEVICE CONTAINS WETTABLE FLANK  
DESIGN FEATURES TO AID IN FILLET FOR-  
MATION ON THE LEADS DURING MOUNTING.  
L
L
DETAIL A  
PIN ONE  
REFERENCE  
ALTERNATE  
CONSTRUCTION  
E
EXPOSED  
COPPER  
MILLIMETERS  
TOP VIEW  
DIM MIN  
NOM  
0.85  
−−−  
MAX  
0.90  
0.05  
A
A1  
A3  
A4  
b
D
D2  
E
E2  
e
K
L
L3  
0.80  
−−−  
A
DETAIL B  
0.10  
C
C
0.20 REF  
−−−  
0.30  
4.50  
4.20  
PLATING  
A1  
A4  
0.10  
0.25  
4.40  
4.13  
2.90  
1.53  
−−−  
0.35  
4.60  
4.27  
3.10  
1.67  
C
C
DETAIL B  
A4  
0.08  
SEATING  
PLANE  
A3  
NOTE 4  
C
3.00  
1.60  
SIDE VIEW  
0.65 BSC  
0.30 REF  
0.40  
DETAIL A  
0.35  
0.00  
0.45  
0.10  
D2  
L3  
0.05  
PLATED  
SURFACES  
14X  
L
1
7
SECTION C−C  
GENERIC  
MARKING DIAGRAM*  
E2  
XXXXX  
XXXXX  
AYWWG  
G
8
14  
K
14X b  
0.10  
0.05  
e
M
M
C A B  
NOTE 3  
C
BOTTOM VIEW  
XXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
RECOMMENDED  
SOLDERING FOOTPRINT*  
WW  
G
= Work Week  
= Pb−Free Package  
(*Note: Microdot may be in either location)  
14X  
4.35  
4.23  
0.75  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “ G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
14  
8
7
3.60 1.75  
PACKAGE  
OUTLINE  
1
0.65  
PITCH  
14X  
0.33  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON14979G  
DFNW14 4.5x3, 0.65P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
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