NCV8114ASN300T1G [ONSEMI]
CMOS Low Dropout Regulator;
| 型号： | NCV8114ASN300T1G |
| 厂家： | 
ONSEMI |
| 描述： | CMOS Low Dropout Regulator |
| 文件： | 总12页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8114
300 mA CMOS Low Dropout
Regulator
The NCV8114 is 300 mA LDO that provides the engineer with a
very stable, accurate voltage with low noise suitable for space
constrained, noise sensitive applications. In order to optimize
performance for battery operated portable applications, the NCV8114
www.onsemi.com
employs the dynamic quiescent current adjustment for very low I
consumption at no−load.
Q
MARKING
DIAGRAM
Features
5
TSOP−5
SN SUFFIX
CASE 483
• Operating Input Voltage Range: 1.7 V to 5.5 V
XXXAYWG
• Available in Fixed Voltage Options: 0.9 V to 3.6 V
5
G
1
Contact Factory for Other Voltage Options
1
• Very Low Quiescent Current of Typ. 50 mA
• Standby Current Consumption: Typ. 0.1 mA
• Low Dropout: 135 mV Typical at 300 mA
XXX = Specific Device Code
A
Y
W
G
= Assembly Location
= Year
•
1% Accuracy at Room Temperature
= Work Week
= Pb−Free Package
• High Power Supply Ripple Rejection: 75 dB at 1 kHz
• Thermal Shutdown and Current Limit Protections
• Stable with a 1 mF Ceramic Output Capacitor
• Available in TSOP Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
IN
OUT
N/C
1
2
3
5
4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
GND
Compliant
EN
Typical Applicaitons
• Parking Camera Modules
(Top View)
®
®
• Wireless Handsets, Wireless LAN, Bluetooth , Zigbee
• Automotive Infotainment Systems
• Other Battery Powered Applications
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 11 of this data sheet.
V
V
IN
OUT
IN
OUT
NCV8114
GND
C
C
OUT
1 mF
Ceramic
IN
EN
ON
OFF
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2017 − Rev. 2
NCV8114/D
NCV8114
IN
ENABLE
LOGIC
THERMAL
EN
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE*
EN
GND
*Active output discharge function is present only in NCV8114ASNyyyTCG devices.
yyy denotes the particular V option.
OUT
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
5
OUT
Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 mF is needed from this
pin to ground to assure stability.
2
3
GND
EN
Power supply ground.
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown
mode.
1
4
IN
Input pin. A small capacitor is needed from this pin to ground to assure stability.
Not connected. This pin can be tied to ground to improve thermal dissipation.
N/C
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VIN
Value
Unit
V
Input Voltage (Note 1)
−0.3 V to 6 V
Output Voltage
VOUT
VEN
−0.3 V to VIN + 0.3 V or 6 V
V
Enable Input
−0.3 V to VIN + 0.3 V or 6 V
V
Output Short Circuit Duration
Maximum Junction Temperature
Operating Ambient Temperature
Storage Temperature
tSC
∞
150
s
TJ(MAX)
TA
°C
°C
°C
V
−40 to 125
−55 to 150
2000
TSTG
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESDHBM
ESDMM
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114,
ESD Machine Model tested per EIA/JESD22−A115,
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
www.onsemi.com
2
NCV8114
THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol
Value
Unit
Thermal Characteristics, TSOP−5
Thermal Resistance, Junction−to−Air
R
259.9
°C/W
q
JA
2
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm Cu area.
RECOMMENDED OPERATING CONDITIONS
Rating
Symbol
Min
1.7
Typ
Max
5.5
Unit
V
Input Voltage
V
IN
Junction Temperature
T
J
−40
+125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS −40°C ≤ T ≤ 125°C; V = V
+ 1 V for V
options greater than 1.5 V. Otherwise V
J
IN
OUT(NOM)
OUT IN
= 2.5 V, whichever is greater; I
= 1 mA, C = C
= 1 mF, unless otherwise noted. V = 0.9 V. Typical values are at T = +25°C.
OUT
IN
OUT
EN
J
Min./Max. are for T = −40°C and T = +125°C respectively (Note 4).
J
J
Parameter
Test Conditions
Symbol
Min
1.7
−40
−2
Typ
Max
5.5
+50
+3
Unit
Operating Input Voltage
V
IN
V
V
≤ 2.0 V
mV
%
OUT
Output Voltage Accuracy
−40°C ≤ T ≤ 125°C
V
OUT
J
V
> 2.0 V
OUT
Line Regulation
Load Regulation
Load Transient
VOUT + 0.5 V ≤ VIN ≤ 5.5 V (V ≥ 1.7 V)
Reg
0.01
28
0.1
45
%/V
mV
mV
IN
LINE
IOUT = 1 mA to 300 mA
Reg
LOAD
I
= 1 mA to 300 mA or 300 mA to 1 mA
−50/
+30
OUT
Tran
LOAD
in 1 ms, C
= 1 mF
OUT
V
= 1.5 V
= 1.85 V
= 2.8 V
= 3.0 V
= 3.1 V
= 3.3 V
380
260
170
160
155
150
600
50
500
370
270
260
250
240
OUT
V
OUT
V
OUT
OUT
OUT
OUT
Dropout Voltage (Note 5)
I
= 300 mA
V
mV
OUT
DO
V
V
V
Output Current Limit
Ground Current
V
OUT
= 90% V
I
CL
300
0.9
mA
mA
mA
V
OUT(nom)
IOUT = 0 mA
VEN ≤ 0.4 V, VIN = 5.5 V
I
95
1
Q
Shutdown Current
I
0.01
DIS
EN Pin Threshold Voltage
High Threshold
V
EN
Voltage increasing
Voltage decreasing
V
EN_HI
EN_LO
Low Threshold
V
EN
V
0.4
1.0
EN Pin Input Current
VEN = 5.5 V
= 4.3 V, V = 3.3 V
I
0.3
75
mA
EN
Power Supply Rejection Ratio
V
IN
f = 1 kHz
dB
OUT
PSRR
I
= 10 mA
OUT
Output Noise Voltage
V
IN
= 2.5 V, V
= 1.8 V, I
= 150 mA
70
mV
rms
OUT
OUT
V
N
f = 10 Hz to 100 kHz
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Temperature increasing from TJ = +25°C
T
160
20
°C
°C
W
SD
Temperature falling from T
T
SDH
SD
Active Output Discharge Resistance
VEN < 0.4 V, Version A only
R
100
DIS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
T = T = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
J
A
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
www.onsemi.com
3
NCV8114
TYPICAL CHARACTERISTICS
3.33
3.32
3.31
3.30
3.29
3.28
3.27
3.26
3.25
100
V
= 3.3 V
= 0 mA
= 1 mF
= 1 mF
90
80
70
60
50
40
30
20
OUT
I
OUT
I
= 1 mA
OUT
C
C
IN
OUT
T = −40°C
J
T = 125°C
J
I
= 300 mA
OUT
T = 25°C
J
V
V
C
C
= 4.3 V
IN
= 3.3 V
= 1 mF
OUT
IN
= 1 mF
3.24
3.23
10
0
OUT
−40 −20
0
20
40
60
80 100 120 140
0
1
2
3
4
5
6
T , JUNCTION TEMPERATURE (°C)
J
V , INPUT VOLTAGE (V)
IN
Figure 3. Output Voltage vs. Temperature −
Figure 4. Quiescent Current vs. Input Voltage
V
OUT = 3.3 V
1000
900
800
700
600
500
400
300
200
1000
900
800
700
600
500
125°C
25°C
−40°C
I
= 300 mA
OUT
V
V
C
C
= 4.3 V
IN
V
V
C
C
= 4.3 V
= 3.3 V
= 1 mF
IN
= 3.3 V
= 1 mF
OUT
OUT
IN
400
300
200
IN
= 1 mF
OUT
= 1 mF
OUT
I
= 1 mA
OUT
100
0
100
0
0.001 0.01
0.1
1
10
100
1000
−40 −20
0
20
40
60
80 100 120 140
I , OUTPUT CURRENT (mA)
OUT
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Ground Current vs. Output Current
Figure 6. Ground Current vs. Temperature
0.20
0.16
0.12
0.08
0.04
0
50
45
40
35
30
25
20
15
10
−0.04
−0.08
−0.12
V
V
I
= 4.3 V to 5.5 V
= 3.3 V
V
V
I
C
C
= 4.3 V
IN
IN
= 3.3 V
OUT
OUT
= 1 mA
= 1 mA to 300 mA
= 1 mF
OUT
OUT
C
C
= 1 mF
IN
IN
OUT
−0.16
−0.20
5
0
= 1 mF
= 1 mF
OUT
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Line Regulation vs. Temperature
Figure 8. Load Regulation vs. Temperature
www.onsemi.com
4
NCV8114
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
V
V
C
C
= 4.3 V
T = 125°C
I
I
= 300 mA
IN
J
OUT
V
V
C
C
= 4.3 V
IN
180
160
140
120
100
80
= 3.3 V
= 1 mF
OUT
= 3.3 V
= 1 mF
OUT
IN
IN
= 1 mF
OUT
= 1 mF
OUT
= 150 mA
= 10 mA
OUT
T = −40°C
J
60
60
I
OUT
40
40
T = 25°C
J
20
0
20
0
−40 −20
0
30 60 90 120 150 180 210 240 270 300
, OUTPUT CURRENT (mA)
0
20
40
60
80 100 120 140
I
T , JUNCTION TEMPERATURE (°C)
J
OUT
Figure 9. Dropout Voltage vs. Output Current
Figure 10. Dropout Voltage vs. Temperature
800
750
700
650
600
550
500
450
400
800
750
700
650
600
550
500
450
400
V
V
C
C
= 4.3 V
= 0 V
V
V
C
C
= 4.3 V
IN
IN
= 90% V
OUT
OUT
OUT(nom)
= 1 mF
= 1 mF
IN
OUT
IN
350
300
350
300
= 1 mF
= 1 mF
OUT
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Current Limit vs. Temperature
Figure 12. Short Circuit Current vs.
Temperature
500
450
400
350
300
250
200
150
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
V
C
C
= 5.5 V
IN
= 3.3 V
OUT
OFF → ON
ON → OFF
= 1 mF
IN
V
= 5.5 V
= 0.4 V
= 1 mF
EN
OUT
V
EN
V
V
C
C
= 4.3 V
IN
= 3.3 V
= 1 mF
OUT
IN
= 1 mF
0.1
0
OUT
50
0
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. Enable Voltage Threshold vs.
Temperature
Figure 14. Current to Enable Pin vs.
Temperature
www.onsemi.com
5
NCV8114
TYPICAL CHARACTERISTICS
150
120
90
150
135
120
105
90
60
30
0
75
60
−30
−60
−90
V
V
C
C
= 5.5 V
V
V
= 4.3 V
= 0 V
45
30
IN
IN
= 3.3 V
= 1 mF
OUT
EN
C
C
= 1 mF
IN
IN
−120
−150
15
0
= 1 mF
= 1 mF
OUT
OUT
−40 −20
0
20
40
60
80
100 120 140
−40 −20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 15. Disable Current vs. Temperature
Figure 16. Discharge Resistance vs.
Temperature
100
10
1
90
80
I
I
I
I
= 1 mA
OUT
OUT
OUT
OUT
= 10 mA
= 150 mA
= 300 mA
Unstable Operation
Stable Operation
70
60
50
40
30
20
V
V
C
C
= 4.3 V
IN
= 3.3 V
= none
V
C
C
= 5.5 V
= 1 mF
= 1 mF
OUT
IN
0.1
IN
IN
= 1 mF
OUT
OUT
10
0
MLCC, X7R, 1206
MLCC, X7R, 1206
0.01
10 100
1K
10K
100K
1M
10M
0
30 60 90 120 150 180 210 240 270 300
FREQUENCY (Hz)
I , OUTPUT CURRENT (mA)
OUT
Figure 17. Power Supply Rejection Ratio −
OUT = 1 mF
Figure 18. Output Capacitor ESR vs. Output
Current
C
10K
1K
I
I
I
I
= 1 mA
OUT
OUT
OUT
OUT
= 10 mA
= 150 mA
= 300 mA
RMS Output Noise (mV)
I
10 Hz − 100 kHz 100 Hz − 100 kHz
OUT
1 mA
90.25
84.55
86.57
95.36
83.61
77.23
80.86
90.17
100
10 mA
150 mA
300 mA
V
V
C
C
= 4.3 V
IN
= 3.3 V
= 1 mF
OUT
10
1
IN
= 1 mF
OUT
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
Figure 19. Output Voltage Noise Spectral Density − COUT = 1 mF
www.onsemi.com
6
NCV8114
TYPICAL CHARACTERISTICS
V
EN
V
EN
I
I
INRUSH
INRUSH
V
V
V
I
= 4.3 V
V
V
V
I
= 4.3 V
IN
IN
= 3.3 V
= 3.3 V
OUT
OUT
= 1 V
= 1 V
EN
EN
= 1 mA
= 300 mA
V
OUT
V
OUT
OUT
OUT
C
C
= 1 mF
= 1 mF
C
C
= 1 mF
= 1 mF
IN
OUT
IN
OUT
50 ms/div
50 ms/div
Figure 20. Enable Turn−on Response −
Figure 21. Enable Turn−on Response −
C
OUT = 1 mF, IOUT = 1 mA
COUT = 1 mF, IOUT = 300 mA
V
EN
V
EN
I
I
INRUSH
INRUSH
V
= 4.3 V
= 3.3 V
= 1 V
= 1 mA
V
V
V
I
= 4.3 V
IN
IN
V
V
I
= 3.3 V
OUT
OUT
= 1 V
EN
EN
= 300 mA
V
OUT
OUT
V
OUT
OUT
C
C
= 4.7 mF
= 4.7 mF
C
C
= 4.7 mF
= 4.7 mF
IN
IN
OUT
OUT
50 ms/div
50 ms/div
Figure 22. Enable Turn−on Response −
OUT = 4.7 mF, IOUT = 1 mA
Figure 23. Enable Turn−on Response −
C
COUT = 4.7 mF, IOUT = 300 mA
V
IN
t
= 1 ms
t
= 1 ms
RISE
FALL
V
IN
V
V
= 4.3 V to 5.3 V
IN
V
V
= 5.3 V to 4.3 V
IN
= 3.3 V
OUT
= 3.3 V
OUT
I
= 1 mA
= 1 mF
OUT
I
= 1 mA
= 1 mF
OUT
C
C
IN
C
C
IN
= 1 mF
OUT
= 1 mF
OUT
V
OUT
V
OUT
20 ms/div
20 ms/div
Figure 24. Line Transient Response − Rising
Edge, IOUT = 1 mA
Figure 25. Line Transient Response − Falling
Edge, IOUT = 1 mA
www.onsemi.com
7
NCV8114
TYPICAL CHARACTERISTICS
V
IN
t
= 1 ms
FALL
t
= 1 ms
RISE
V
IN
V
V
= 4.3 V to 5.3 V
IN
= 3.3 V
OUT
I
C
C
= 300 mA
= 1 mF
OUT
IN
V
OUT
V
V
= 5.3 V to 4.3 V
= 3.3 V
= 1 mF
IN
OUT
V
OUT
OUT
I
= 300 mA
OUT
C
C
= 1 mF
= 1 mF
IN
OUT
4 ms/div
4 ms/div
Figure 26. Line Transient Response − Rising
Edge, IOUT = 300 mA
Figure 27. Line Transient Response − Falling
Edge, IOUT = 300 mA
I
OUT
t
= 1 ms
t
= 1 ms
RISE
FALL
V
V
= 4.3 V
I
IN
OUT
= 3.3 V
OUT
C
C
= 1 mF (MLCC)
IN
= 1 mF (MLCC)
OUT
V
OUT
V
IN
= 4.3 V
V
OUT
V
OUT
= 3.3 V
C
C
= 1 mF (MLCC)
IN
= 1 mF (MLCC)
OUT
5 ms/div
20 ms/div
Figure 28. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
Figure 29. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
I
OUT
t
= 1 ms
FALL
t
= 1 ms
RISE
I
OUT
V
V
= 4.3 V
IN
= 3.3 V
OUT
C
C
= 4.7 mF (MLCC)
IN
= 4.7 mF (MLCC)
OUT
V
OUT
V
OUT
V
V
= 4.3 V
IN
= 3.3 V
OUT
C
C
= 4.7 mF (MLCC)
IN
= 4.7 mF (MLCC)
OUT
5 ms/div
20 ms/div
Figure 30. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
Figure 31. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
www.onsemi.com
8
NCV8114
TYPICAL CHARACTERISTICS
V
V
I
= 4.3 V
IN
Full Load
Overheating
= 3.3 V
OUT
V
IN
= 10 mA
OUT
C
C
= 1 mF (MLCC)
= 1 mF (MLCC)
IN
I
OUT
OUT
Thermal
V
OUT
Shutdown
V
OUT
V
V
C
C
= 5.5 V
= 3.3 V
= 1 mF (MLCC)
IN
OUT
IN
= 1 mF (MLCC)
OUT
TSD Cycling
10 ms/div
10 ms/div
Figure 32. Turn−on/off − Slow Rising VIN
Figure 33. Short Circuit and Thermal
Shutdown
V
EN
t
= 1 ms
FALL
V
V
= 4.3 V
IN
= 3.3 V
OUT
C
C
= 1 mF (MLCC)
IN
= 1 mF (MLCC)
OUT
C
= 4.7 mF
V
OUT
OUT
C
= 1 mF
OUT
500 ms/div
Figure 34. Enable Turn−off
500
450
400
350
300
0.7
0.6
0.5
0.4
0.3
P
P
, T = 25°C, 2 oz Cu
D(MAX)
A
, T = 25°C, 1 oz Cu
D(MAX)
A
q
q
, 1 oz Cu
, 2 oz Cu
JA
JA
250
200
0.2
0.1
0
100
200
300
400
500
600
700
2
COPPER HEAT SPREADER AREA (mm )
Figure 35.
www.onsemi.com
9
NCV8114
APPLICATIONS INFORMATION
General
disable state the device consumes as low as typ. 10 nA from
the V .
The NCV8114 is a high performance 300 mA Low
IN
Dropout Linear Regulator. This device delivers very high
PSRR (over 75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with very
low quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular
phones, wireless and many others. The device is fully
protected in case of output overload, output short circuit
condition and overheating, assuring a very robust design.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCV8114 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Input Capacitor Selection (CIN)
Output Current Limit
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. /max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Output Current is internally limited within the IC to a
typical 600 mA. The NCV8114 will source this amount of
current measured with a voltage drops on the 90% of the
nominal V
. If the Output Voltage is directly shorted to
= 0 V), the short circuit protection will limit
OUT
ground (V
OUT
the output current to 630 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
Output Decoupling (COUT
)
threshold (T − 160°C typical), Thermal Shutdown event
SD
The NCV8114 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCV8114 is designed to
remain stable with minimum effective capacitance of
0.22mF to account for changes with temperature, DC bias
and package size. Especially for small package size
capacitors such as 0402 the effective capacitance drops
rapidly with the applied DC bias.
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (T
− 140°C typical).
SDU
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Power Dissipation
As power dissipated in the NCV8114 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. For reliable operation, junction temperature
should be limited to +125°C.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the C
but the
OUT
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
The maximum power dissipation the NCV8114 can
handle is given by:
Enable Operation
ƪ
ƫ
125° C * TA
The NCV8114 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active so that the output voltage
(eq. 1)
PD(MAX)
+
qJA
The power dissipated by the NCV8114 for given
application conditions can be calculated from the following
equations:
ǒ
Ǔ
ǒ
Ǔ
(eq. 2)
PD [ VIN IGND@IOUT ) IOUT VIN * VOUT
V
OUT
is pulled to GND through a 100 W resistor. In the
www.onsemi.com
10
NCV8114
Reverse Current
nominal value. This time is dependent on various
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that V > V .
application conditions such as V
For example typical value for V
, C
= 1.2 V, C
and T .
OUT(NOM)
OUT
A
= 1 mF,
OUT
IN
OUT
OUT
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
I
= 1 mA and T = 25°C is 90 ms.
A
OUT
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place C and C capacitors close to the
Power Supply Rejection Ratio
IN
OUT
The NCV8114 features very good Power Supply
Rejection ratio. If desired the PSRR at higher frequencies in
the range 100 kHz − 10 MHz can be tuned by the selection
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
of C
capacitor and proper PCB layout.
OUT
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which V
will reach 98% of its
OUT
ORDERING INFORMATION
†
Device
Voltage Option
1.2 V
Marking
DEC
DED
DEE
DEH
DEF
DEG
DEA
DFC
DFD
DFE
DFF
Option
Package
Shipping
NCV8114ASN120T1G
NCV8114ASN150T1G
NCV8114ASN180T1G
NCV8114ASN250T1G
NCV8114ASN280T1G
NCV8114ASN300T1G
NCV8114ASN330T1G
NCV8114BSN120T1G
NCV8114BSN150T1G
NCV8114BSN180T1G
NCV8114BSN280T1G
NCV8114BSN300T1G
NCV8114BSN330T1G
1.5 V
1.8 V
With output active
discharge function
2.5 V
2.8 V
3.0 V
3000 / Tape & Reel
(Contact sales
office for
TSOP−5
(Pb−Free)
3.3 V
availability)
1.2 V
1.5 V
1.8 V
Without output active
discharge function
2.8 V
3.0 V
DFG
DFA
3.3 V
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
11
NCV8114
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
MIN
2.85
1.35
0.90
0.25
MAX
3.15
1.65
1.10
0.50
DETAIL Z
J
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
0.05
H
SEATING
PLANE
END VIEW
C
10
3.00
_
_
SIDE VIEW
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of ZigBee Alliance.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NCV8114/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明