NDB6030PL [ONSEMI]
P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ;
| 型号： | NDB6030PL |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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June 1997
NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-30 A, -30 V. RDS(ON) = 0.042 W @ VGS= -4.5 V
RDS(ON) = 0.025 W @ VGS= -10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON)
.
175°C maximum junction temperature rating.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP6030PL
NDB6030PL
Units
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
-30
±16
-30
V
V
A
VDSS
VGSS
ID
-90
75
W
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
0.5
-65 to 175
275
Operating and Storage Temperature Range
°C
°C
TJ,TSTG
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
°C/W
°C/W
RqJC
RqJA
62.5
© 1997 Fairchild Semiconductor Corporation
NDP6030PL Rev.B1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-30
V
ID = -250 µA, Referenced to 25 o C
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
-36
DBVDSS/DTJ
-250
1
µA
mA
nA
nA
IDSS
VDS = -24 V, VGS = 0 V
TJ = 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
-100
-100
IGSSF
IGSSR
VGS = 16 V, VDS = 0 V
VGS = -16 V, VDS = 0 V
ON CHARACTERISTICS (Note)
ID = -250 µA, Referenced to 25 o C
VDS = VGS, ID= -250 µA
mV/oC
V
Gate Threshold Voltage Temp.Coefficient
2.2
DVGS(th)/DTJ
Gate Threshold Voltage
-1
-1.4
-2
VGS(th)
-0.8
-1.08
-1.6
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = -4.5 V, ID = -15 A
0.037 0.042
0.053 0.075
0.021 0.025
W
TJ = 125°C
VGS = -10 V, ID = -19 A
VGS = -4.5 V, VDS = -5 V
VDS = -4.5 V, ID = -19 A
On-State Drain Current
-20
A
S
ID(on)
gFS
Forward Transconductance
20
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
1570
975
pF
pF
pF
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
360
SWITCHING CHARACTERISTICS (Note)
Turn - On Delay Time
Turn - On Rise Time
12.5
60
25
nS
nS
tD(on)
VDD = -15 V, ID = -5 A,
VGS = -5 V, RGEN = 6 W
120
tr
Turn - Off Delay Time
Turn - Off Fall Time
50
52
100
100
nS
nS
tD(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
26
6.5
36
nC
nC
nC
Qg
Qgs
Qgd
VDS= -12 V
ID = -30 A , VGS = -5 V
11.5
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-30
-100
-1.3
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -15 A (Note)
-0.92
58
V
ns
A
VGS = 0 V, IF = -30 A
dIF/dt = 100 A/µs
Irr
Reverse Recovery Current
-1.5
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
Typical Electrical Characteristics
1.6
1.4
1.2
1
60
V
= -10V
-7.0
GS
V GS= -3.5 V
-6.0
-5.0
-4.0
-4.5
-4.5
40
20
0
-5.0
-4.0
-5.5
-6.0
-3.5
0.8
0.6
0.4
-7.0
-3.0
-10
0
10
20
30
40
50
60
0
1
2
3
4
5
-I , DRAIN CURRENT (A)
-V , DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.12
1.8
TA= 25°C
ID = -15A
I
= -15A
D
1.6
1.4
1.2
1
V
= -4.5V
0.1
0.08
0.06
0.04
0.02
0
GS
125 °C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
2
4
6
8
10
J
-VGS ,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
with Temperature.
60
30
25
20
15
10
5
V
= 0V
T
= -55°C
GS
V
DS
= -5V
A
10
1
25°C
125°C
T = 125°C
J
25°C
0.1
-55°C
0.01
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
NDP6030PL Rev.B1
Typical Electrical Characteristics (continued)
5000
10
I D = -30A
3000
2000
VDS= -6V
8
-12V
-24V
C
iss
6
C
oss
1000
4
2
0
500
300
C
rss
f = 1 MHz
V
GS
= 0 V
150
0.1
0.3
1
2
5
10
20 30
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
0
10
20
30
40
50
Q
, GATE CHARGE (nC)
g
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
7000
150
100
6000
5000
4000
3000
2000
1000
0
SINGLE PULSE
50
30
R q =2° C/W
JC
TC = 25°C
10
5
VGS = -4.5V
SINGLE PULSE
Rq
= 2.0 °C/W
JC
2
1
TC = 25°C
0.001
0.01
0.1
1
10
100
1,000
1
2
5
10
20
30
50
SINGLE PULSE TIME (mS)
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.3
0.2
R
(t) = r(t) * R
JC
q
JC
q
0.2
R
= 2.0 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t
1
t
2
0.03
0.01
T - T = P * R
(t)
J
JC
C
q
0.02
Duty Cycle, D = t /t
1
2
Single Pulse
0.01
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
NDP6030PL Rev.B1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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