NDC100170A [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 100 A, 1700 V, Die;
| 型号： | NDC100170A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 100 A, 1700 V, Die |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
100 A, 1700 V, D1, Die
1. Cathode
2. Anode
Schottky Diode
NDC100170A,
NDCTR100170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Anode
CROSS SECTION
Features
Max Junction Temperature 175C
Avalanche Rated 2045 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Industrial Motor Loads, Wind Generation Inverter, Solar Inverter,
UPS
Power Switching Circuits
Die Information
Wafer Diameter: 6 inch
Die Size: 6140 9500 mm
(include Scribe Lane)
Metallization:
Top: Ti/TiN/AISiCu
Back: Ti/NiV/Ag
Die Thickness: Typ. 200 mm
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Bonding Pad Size:
Anode: 4260 7620 mm
Recommended Wire Bond (Note 1)
Anode: 20 mil 3
NOTE:
1. Based on TO−247 package
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 2
NDC100170A/D
NDC100170A, NDCTR100170A
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
1700
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
Single Pulse Avalanche Energy (Notes 2 and 4)
Continuous Rectified Forward Current @ T < 153C
2025
mJ
A
AS
I
100
F
C
Continuous Rectified Forward Current @ T < 135C
145
C
I
Non-Repetitive Peak Forward Surge Current
1435
A
A
T
C
T
C
= 25C, 10 ms
= 150C, 10 ms
F, Max
1428
I
Non-Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
574
A
F,SM
p
Ptot
T
C
C
= 25C
1666
W
W
C
T
= 150C
277
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. E of 2025 mJ is based on starting T = 25C, L = 0.5 mH, I = 90 A, V = 50 V.
AS
FMax
J
AS
3. I
, and I
AS
surge test value are limited by measurement limitation, it’s not product capability
FSM
4. DC, E and Curve test result base on TO247 package
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
Value
Unit
R
0.09
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 100 A, T = 25C
Min
−
Typ
1.6
Max
−
Unit
V
F
V
F
J
I = 100 A, T = 125C
−
2.16
2.6
−
F
J
I = 100 A, T = 175C
−
−
F
J
I
Reverse Current
V
V
V
= 1700 V, T = 25C
−
0.15
1.45
12.3
604
7672
539
383
40
60
100
−
mA
R
R
R
R
J
= 1700 V, T = 125C
−
J
= 1700 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NDC100170A, NDCTR100170A
The Configuration of Chips
(Based on 6 inch Wafer)
chip
chip
PSPI Passivation Line
Scribe Lane
80.0 mm
chip
chip
Sawn−on−film frame packing based on tested wafer
ORDERING INFORMATION
Part Number
Die Size with SL (mm)
6140*9500
Package
N/A
Shipping
Wafer Sales
Tape & Reel
NDC100170A
NDCTR100170A
6140*9500
N/A
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3
NDC100170A, NDCTR100170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
100
90
1E−03
T = −55C
J
T = 175C
T = 25C
J
J
1E−04
1E−05
1E−06
1E−07
80
70
60
50
40
30
20
T = 175C
J
T = 75C
T = 125C
J
J
T = 125C
J
T = 75C
J
1E−08
1E−09
10
0
T = 25C
J
T = −55C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
500
1000
1500
2000
175
1K
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
1200
1000
800
1800
1500
1200
D = 0.1
D = 0.2
D = 0.3
D = 0.5
600
900
600
400
D = 1.0
200
0
300
0
D = 0.7
25
50
75
100
125
150
175
25
50
75
100
125
150
T , CASE TEMPERATURE (C)
C
T , CASE TEMPERATURE (C)
C
Figure 3. Current Derating
Figure 4. Power Derating
700
600
500
400
300
200
30K
10K
1K
100
0
100
0
100
200
300
400 500
600
700 800
0.1
1
10
100
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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4
NDC100170A, NDCTR100170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
180
160
140
120
100
80
60
40
20
0
0
100
200 300
400 500
600
700
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.0001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response
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