NDF10N62Z [ONSEMI]
N-Channel Power MOSFET 620 V, 0.65 Ω; N沟道功率MOSFET的620 V， 0.65 ？
| 型号： | NDF10N62Z |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 620 V, 0.65 Ω |
| 文件： | 总6页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDF10N62Z, NDP10N62Z
N-Channel Power MOSFET
620 V, 0.65 W
Features
• Low ON Resistance
• Low Gate Charge
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• Zener Diode−protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
V
R
(TYP) @ 5 A
DS(ON)
DSS
620 V
0.65 Ω
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol NDF10N62Z NDP10N62Z Unit
N−Channel
Drain−to−Source Voltage
V
620 (Note 1)
10 (Note 2)
V
A
D (2)
DSS
Continuous Drain Current,
R
I
D
q
JC
Continuous Drain Current
I
5.7 (Note 2)
36 (Note 2)
A
A
D
R
q
JC
, T = 100°C
A
G (1)
Pulsed Drain Current,
@ 10 V
I
DM
V
GS
Power Dissipation, R
(Note 1)
P
36
125
W
q
JC
D
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
Gate−to−Source Voltage
V
GS
30
V
Single Pulse Avalanche
E
AS
300
mJ
Energy, I = 10 A
D
ESD (HBM)
(JESD22−A114)
V
3900
V
V
esd
RMS Isolation Voltage
V
ISO
4500
NDF10N62ZG
or
NDP10N62ZG
AYWW
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
Peak Diode Recovery
dv/dt
4.5 (Note 3)
10
V/ns
A
Gate
Source
Continuous Source
Current (Body Diode)
I
S
TO−220AB
CASE 221A
STYLE 5
Maximum Temperature for
Soldering Leads
T
L
260
°C
°C
Drain
Operating Junction and
T , T
−55 to 150
J
stg
Storage Temperature Range
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size,
(Cu area = 1.127 in sq [2 oz] including traces)
2. Limited by maximum junction temperature
ORDERING INFORMATION
3. I ≤ 10 A, di/dt ≤ 200 A/ms, V = 80% BV
S
DD
DSS
Device
Package
TO−220FP
TO−220AB
Shipping
NDF10N62ZG
NDP10N62ZG
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2010 − Rev. 0
NDF10N62Z/D
NDF10N62Z, NDP10N62Z
THERMAL RESISTANCE
Parameter
Symbol
NDF10N62Z
NDP10N62Z
Unit
Junction−to−Case (Drain)
R
3.4
50
1.0
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 4)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
620
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 620 V, V = 0 V
GS
125°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 5.0 A
R
DS(on)
0.65
7.9
0.75
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 100 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 10 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
1425
150
35
pF
nC
iss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
47
g
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Q
9.3
25
gs
gd
gp
V
DD
= 310 V, I = 10 A,
D
V
GS
= 10 V
Q
V
6.4
1.5
V
Gate Resistance
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
t
15
31
40
21
ns
d(on)
Rise Time
t
r
V
V
= 310 V, I = 10 A,
D
DD
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 10 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
395
3.0
ns
mC
V
GS
= 0 V, V = 30 V
DD
I
S
= 10 A, di/dt = 100 A/ms
Q
rr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
NDF10N62Z, NDP10N62Z
TYPICAL CHARACTERISTICS
20
18
20
V
GS
= 15 V
18
16
14
12
10
8
V
DS
= 30 V
T = 25°C
J
10 V
6.6 V
6.4 V
T = 25°C
J
16
14
12
10
8
7.0 V
6.2 V
6.0 V
5.8 V
T = 150°C
J
6
6
5.6 V
5.4 V
4
4
2
0
2
0
T = −55°C
J
5.0 V
0
4
8
12
16
20
24
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.80
0.75
0.70
0.80
0.75
0.70
T = 25°C
J
T = 25°C
J
V
GS
= 10 V
I
D
= 5 A
0.65
0.60
0.65
0.60
5
6
7
8
9
10
2.5
5.0
7.5
10
12.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
1.15
1.1
2.7
V
= 10 V
= 5 A
GS
2.2
1.7
1.2
I
D
I
D
= 1 mA
1.05
1.0
0.95
0.7
0.2
0.9
−50 −25
0
25
50
75
100
125 150
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. BVDSS Variation with Temperature
Temperature
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3
NDF10N62Z, NDP10N62Z
TYPICAL CHARACTERISTICS
3500
3000
2500
2000
100
10
V
GS
= 0 V
V
= 0 V
GS
T = 25°C
J
T = 150°C
J
1
C
iss
1500
1000
T = 100°C
J
0.1
C
rss
500
0
C
oss
0.01
0
25
50
75
100
125
150 175 200
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
Figure 8. Capacitance Variation
vs. Voltage
20
400
300
200
1000
100
10
V
DD
= 310 V
I
V
= 10 A
D
t
d(off)
= 10 V
GS
15
10
t
V
DS
r
t
f
t
d(on)
QT
Q
Q
V
GS
gs
gd
5
0
100
0
V
= 310 V
= 10 A
DS
I
D
T = 25°C
J
1
0
5
10 15 20 25 30 35 40 45 50
1
10
R , GATE RESISTANCE (W)
100
Q , TOTAL GATE CHARGE (nC)
g
G
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
10
8
100
10
V
= 10 V
GS
100 ms
V
= 0 V
GS
1 ms
Single Pulse
= 25°C
T = 25°C
J
T
C
10 ms
6
1
Mounted on 2″ sq. FR4
10 ms
dc
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
die operating
4
0.1
2
0
R
Limit
DS(on)
Thermal Limit
Package Limit
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Diode Source Current vs.
Forward Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF10N62Z
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4
NDF10N62Z, NDP10N62Z
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
0.01
R
Steady State = 3.4°C/W
q
JC
Single Pulse Simulation
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Impedance for NDF10N62Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NDF10N62Z, NDP10N62Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
M
M
0.25 (0.010)
B
Y
3. SOURCE
TO−220AB
CASE 221A−09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ISSUE AE
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
INCHES
DIM MIN MAX
MILLIMETERS
T
S
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
4
1
A
K
Q
Z
2
3
G
H
J
U
H
K
L
N
Q
R
S
T
L
R
V
U
V
Z
J
G
0.080
2.04
D
STYLE 5:
PIN 1. GATE
2. DRAIN
N
3. SOURCE
4. DRAIN
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NDF10N62Z/D
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