NDSH10170A [ONSEMI]
碳化硅（SiC）肖特基二极管 - EliteSiC系列，10A，1700V，D1，TO-247-2L;
| 型号： | NDSH10170A |
| 厂家： | 
ONSEMI |
| 描述： | 碳化硅（SiC）肖特基二极管 - EliteSiC系列，10A，1700V，D1，TO-247-2L 肖特基二极管 |
| 文件： | 总6页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 1700 V, D1, TO-247-2L
1. Cathode
2. Anode
Schottky Diode
NDSH10170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
TO−247−2LD
CASE 340DA
MARKING DIAGRAM
Features
Max Junction Temperature 175C
Avalanche Rated 156 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
NDSH
10170A
AYWWZZ
No Reverse Recovery / No Forward Recovery
These Devices are Halogen Free/BFR Free and are RoHS Compliant
NDSH10170A
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
Applications
SMPS, Solar Inverter, UPS
Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 3
NDSH10170A/D
NDSH10170A
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
1700
156
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 157C
mJ
A
I
F
10
C
Continuous Rectified Forward Current @ T < 135C
16
C
I
Non-Repetitive Peak Forward Surge Current
868
A
A
T
C
T
C
= 25C, 10 ms
= 150C, 10 ms
F, Max
798
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
105
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
25
A
F,RM
p
Ptot
T
= 25C
185
W
W
C
C
C
T
= 150C
31
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 156 mJ is based on starting T = 25C, L = 0.5 mH, I = 25 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.81
40
Unit
R
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
C/W
C/W
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25C
Min
−
Typ
1.50
1.87
2.19
0.09
0.42
2.46
74
Max
1.75
−
Unit
V
F
V
F
J
I = 10 A, T = 125C
−
F
J
I = 10 A, T = 175C
−
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1700 V, T = 25C
−
40
60
100
−
mA
J
= 1700 V, T = 125C
−
J
= 1700 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
856
69
−
−
−
−
48
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NDSH10170A
NDSH10170A
TO−247−2LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
NDSH10170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
1E−05
20
15
T = −55C
T = 175C
J
J
T = 125C
J
T = 25C
J
1E−06
T = 75C
J
T = 75C
J
10
5
T = 125C
J
1E−07
1E−08
T = −55C
J
T = 175C
J
T = 25C
J
0
0
500
1000
1500
0
0.5
1.0
1.5
2.0
2.5
3.0
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
180
160
140
120
100
80
200
175
150
125
100
75
D = 0.1
D = 0.2
D = 0.7
D = 0.3
D = 0.5
60
50
40
25
0
D = 1.0
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (C)
C
T , CASE TEMPERATURE (C)
C
Figure 3. Current Derating
Figure 4. Power Derating
80
70
60
50
40
30
20
2000
1000
100
10
10
0
0
100 200
300
400 500
600
700 800
0.1
1
10
100
800
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitive vs. Reverse Voltage
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3
NDSH10170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
25
20
15
10
5
0
0
100 200
300
400
500 600
700
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
0.01
Single Pulse
Notes:
= 0.81C/W
R
q
JC
t
Peak T = P
x Z (t) + T
q
DM JC C
1
J
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340DA
ISSUE A
DATE 27 FEB 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXXX = Specific Device Code
A
= Assembly Location
= Year
Y
WW
ZZ
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to de-
vice data sheet for actual part marking. Pb−
Free indicator, “G” or microdot “ G”, may or
may not be present. Some products may not
follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON00714H
TO−247−2LD
PAGE 1 OF 1
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