NDT01N60 [ONSEMI]
N-Channel Power MOSFET 600 V, 8.5; N沟道功率MOSFET的600 V ， 8.5
| 型号： | NDT01N60 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 600 V, 8.5 |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDD01N60, NDT01N60
N-Channel Power MOSFET
600 V, 8.5 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
Compliant
V
R
MAX
DS(ON)
(BR)DSS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
600 V
8.5 W @ 10 V
Parameter
Drain−to−Source Voltage
Continuous Drain Current R
Symbol
V
NDD
NDT
Unit
V
N−Channel MOSFET
600
DSS
D (2)
I
D
1.5
1.0
0.4
A
q
JC
Steady State, T = 25°C (Note 1)
C
Continuous Drain Current R
I
D
0.25
A
q
JC
Steady State, T = 100°C (Note 1)
C
G (1)
Pulsed Drain Current, t = 10 ms
I
6.0
46
1.5
2.5
A
p
DM
Power Dissipation – R
P
D
W
q
JC
S (3)
Steady State, T = 25°C
C
MARKING
Gate−to−Source Voltage
V
30
13
V
GS
DIAGRAMS
Single Pulse Drain−to−Source
EAS
mJ
4
Avalanche Energy (I = 1.0 A)
PK
Drain
Peak Diode Recovery (Note 2)
Source Current (Body Diode)
dv/dt
4.5
V/ns
A
4
DPAK
CASE 369C
STYLE 2
I
S
1.5
0.4
2
1
Lead Temperature for Soldering
Leads
T
L
260
°C
3
2
Drain
Operating Junction and Storage
Temperature
T , T
−55 to +150
°C
1
3
J
STG
Gate Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
4
4
Drain
IPAK
CASE 369D
STYLE 2
2. I = 1.5 A, di/dt ≤ 100 A/ms, V ≤ BV
S
DD
DSS
1
2
3
THERMAL RESISTANCE
Parameter
Y
= Year
= Work Week
= Pb−Free Package
Symbol
Value
Unit
°C/W
°C/W
WW
G
Junction−to−Case (Drain)
NDD01N60
R
2.7
1
2
3
q
JC
Gate Drain Source
Junction−to−Ambient
(Note 4) NDD01N60
(Note 3) NDD01N60−1
(Note 4) NDT01N60
(Note 5) NDT01N60
R
38
96
58
141
q
JA
Drain
4
4
SOT−223
CASE 318E
STYLE 3
AYW
01N60G
G
1
2
3
3. Insertion mounted.
A
Y
= Assembly Location
= Year
= Work Week
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
1
2
3
5. Surface−mounted on FR4 board using minimum recommended pad size
W
Gate Drain Source
(Cu area = 0.026” sq. [2 oz]).
01N60 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2013 − Rev. 2
NDD01N60/D
NDD01N60, NDT01N60
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
600
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
Reference to 25°C, I = 1 mA
660
mV/°C
(BR)DSS
D
Drain−to−Source Leakage Current
I
V
DS
= 600 V, V = 0 V
T = 25°C
J
1
mA
DSS
GS
T = 125°C
J
50
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
=
20 V
nA
GSS
GS
V
V
= V , I = 50 mA
2.2
3.3
7.0
3.7
8.5
V
GS(TH)
DS
GS
D
Negative Threshold Temperature Coef-
ficient
V
/T
J
mV/°C
GS(TH)
Static Drain-to-Source On Resistance
Forward Transconductance
R
V
V
= 10 V, I = 0.2 A
8.0
0.9
W
DS(on)
GS
D
g
= 15 V, I = 0.2 A
S
FS
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCES
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance (Note 7)
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain Charge (Note 7)
Plateau Voltage
C
C
160
22
pF
nC
iss
V
= 25 V, V = 0 V, f = 1 MHz
GS
oss
DS
C
4.0
7.2
1.2
3.1
4.5
6.7
rss
Q
g
gs
Q
Q
V
DS
= 300 V, I = 0.4 A, V = 10 V
D GS
gd
GP
V
V
Gate Resistance
R
W
g
SWITCHING CHARACTERISTICS (Note 8)
Turn-on Delay Time
t
8.0
5.1
ns
d(on)
Rise Time
t
r
V
= 300 V, I = 0.4 A,
D
DD
V
= 10 V, R = 0 W
GS
G
Turn-off Delay Time
t
16.5
21.3
d(off)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
T = 25°C
0.78
0.63
179
37
1.6
V
SD
J
I
S
= 0.4 A, V = 0 V
GS
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
a
b
V
GS
= 0 V, V = 30 V
DD
= 1.0 A, d /d = 100 A/ms
I
S
i t
Discharge Time
t
141
288
Reverse Recovery Charge
Q
nC
rr
6. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
NDD01N60−1G
NDD01N60T4G
NDT01N60T1G
IPAK
75 Units / Rail
(Pb-Free, Halogen-Free)
DPAK
2500 / Tape & Reel
1000 / Tape & Reel
(Pb-Free, Halogen-Free)
SOT−223
(Pb-Free, Halogen-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
2.0
5.5 V
V
GS
= 10 V
V
≥ 25 V
DS
4.8 V
4.6 V
1.6
1.2
0.8
T = 25°C
J
T = 25°C
J
4.4 V
T = −55°C
J
T = 125°C
J
0.2
0
0.4
0
4.2 V
4.0 V
0
5
10
15
20
25
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9.5
9.0
8.5
8.0
7.5
16
14
12
10
I
= 200 mA
D
V
= 10 V
T = 25°C
GS
J
T = 25°C
J
8
6
7.0
6.5
4
5
6
7
8
9
10
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
10,000
1000
V
GS
= 0 V
I
V
= 200 mA
D
2.0
1.6
1.2
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
0.8
0.4
−50 −25
0
25
50
75
100
125 150
0
100
200
300
400
500
600
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
350
300
250
200
Q
T
8
C
iss
V
DS
6
4
Q
gs
10
C
oss
Q
gd
150
100
C
V
DS
= 300 V
rss
V
GS
= 0 V
2
0
T = 25°C
D
J
T = 25°C
J
50
0
I
= 400 mA
f = 1 MHz
1
1
10
100
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
3.5
3.0
2.5
2.0
1.5
1.0
V
= 300 V
= 400 mA
= 10 V
DS
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
t
f
t
d(off)
r
10
1
t
d(on)
t
0.5
0
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
1
10
1
V
= 10 V
R
Limit
GS
DS(on)
Single Pulse
= 25°C
Thermal Limit
Package Limit
10 ms
T
C
1 ms 100 ms
T = 150°C
J
100 ms
1 ms
10 ms
10 ms
0.1
0.1
dc
V
= 10 V
GS
R
Limit
DS(on)
Single Pulse
= 25°C
Thermal Limit
Package Limit
dc
T
C
T = 150°C
J
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD01N60
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDT01N60
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4
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD01N60
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDT01N60
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5
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
4
2
H
E
E
1
3
b
e1
0.069
0.276
−
0.078
0.287
10°
e
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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6
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
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7
NDD01N60, NDT01N60
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
PLANE
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NDD01N60/D
相关型号：
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