NDT02N60Z [ONSEMI]
N-Channel Power MOSFET;
| 型号： | NDT02N60Z |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDT02N60Z
N-Channel Power MOSFET
600 V, 8.0 W
Features
• 100% Avalanche Tested
• Extremely High dv/dt Capability
• Gate Charge Minimized
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• Zener−protected
V
R
MAX
DS(ON)
(BR)DSS
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
600 V
8.0 W @ 10 V
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−Channel
D (2, 4)
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain Current R
I
0.3
A
q
D
JA
JA
Steady State, T = 25°C
G (1)
C
Continuous Drain Current R
I
D
0.21
2.0
A
q
Steady State, T = 100°C
C
S (3)
Power Dissipation – R
P
W
q
D
JA
Steady State, T = 25°C
C
MARKING
DIAGRAM
Pulsed Drain Current
I
5
A
A
DM
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
I
S
2.2
38
Drain
4
EAS
mJ
Energy (I = 1.4 A)
D
4
SOT−223
CASE 318E
STYLE 3
AYW
2N60ZG
G
Peak Diode Recovery (Note 1)
dV/dt
4.5
V/ns
°C
1
2
Maximum Temperature for Soldering Leads
T
260
3
L
1
2
3
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Gate Drain Source
A
Y
W
= Assembly Location
= Year
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I < 2.2 A, di/dt ≤ 200 A/ms, V ≤ BV
, T = +150°C
J
2N60Z = Specific Device Code
S
DD
DSS
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction−to−Ambient Steady State
R
°C/W
q
JA
NDT02N60Z (Note 2)
NDT02N60Z (Note 3)
61
148
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
2. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces)
3. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2014 − Rev. 0
NDT02N60Z/D
NDT02N60Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
600
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
Reference to 25°C,
= 1 mA
605
mV/°C
(BR)DSS
I
D
Drain−to−Source Leakage Current
I
V
DS
= 600 V, V = 0 V
T = 25°C
1
mA
mA
DSS
GS
J
T = 125°C
J
50
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
GS
= 20 V
GSS
V
V
DS
= V , I = 50 mA
3.0
3.9
4.5
8.0
V
GS(TH)
GS
D
Negative Threshold Temperature Coef-
ficient
V
/T
J
Reference to 25°C, I = 50 mA
10.2
mV/°C
GS(TH)
D
Static Drain-to-Source On Resistance
Forward Transconductance
R
V
V
= 10 V, I = 0.7 A
5.9
1.3
W
DS(on)
GS
D
g
= 15 V, I = 0.7 A
S
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
C
170
22
pF
iss
Output Capacitance (Note 5)
C
oss
V
DS
= 25 V, V = 0 V, f = 1 MHz
GS
Reverse Transfer Capacitance (Note 5)
C
4.8
7.8
rss
Effective output capacitance,
energy related (Note 7)
C
o(er)
V
GS
= 0 V, V = 0 to 480 V
DS
Effective output capacitance,
time related (Note 8)
C
12.4
I
D
= constant, V = 0 V,
o(tr)
GS
V
DS
= 0 to 480 V
Total Gate Charge (Note 5)
Gate-to-Source Charge (Note 5)
Gate-to-Drain (“Miller”) Charge (Note 5)
Plateau Voltage
Q
7.4
1.8
nC
g
Q
gs
V
DS
= 300 V, I = 1.6 A, V = 10 V
D GS
Q
3.8
gd
GP
V
6.4
V
Gate Resistance
R
11.5
W
g
RESISTIVE SWITCHING CHARACTERISTICS (Note 6)
Turn-on Delay Time
Rise Time
t
10
6
ns
d(on)
t
r
V
DD
= 300 V, I = 1.6 A,
D
V
GS
= 10 V, R = 0 W
G
Turn-off Delay Time
Fall Time
t
14
8
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
V
T = 25°C
0.9
0.8
230
50
1.2
V
SD
J
I
= 1.6 A, V = 0 V
GS
S
T = 100°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
a
V
= 0 V, V = 30 V, I = 1.6 A,
DD S
GS
d /d = 100 A/ms
i
t
Discharge Time
t
180
495
b
Reverse Recovery Charge
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
6. Switching characteristics are independent of operating junction temperatures.
7. C
8. C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
o(er)
o(tr)
oss DS
(BR)DSS
while V is rising from 0 to 80% V
DS (BR)DSS
is a fixed capacitance that gives the same charging time as C
oss
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2
NDT02N60Z
TYPICAL CHARACTERISTICS
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
2.50
V
GS
= 10 V to 7.5 V
7.0 V
6.5 V
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
V
DS
= 15 V
T = 25°C
J
6.0 V
T = 150°C
J
5.5 V
5.0 V
0.25
0
0.25
0
T = −55°C
J
0
5
10
15
20
25
30
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9.5
9.0
8.5
8.0
10
9
T = 25°C
GS
J
V
T = 25°C
D
J
= 10 V
I
= 0.7 A
8
7.5
7.0
6.5
7
6
5
6.0
5.5
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
, GATE VOLTAGE (V)
10
0
0.5
1.0
1.5
2.0
2.5
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10 V
= 0.7 A
GS
I
D
= 1 mA
I
D
0.925
0.900
0.6
0.4
−50 −25
0
25
50
75
100
125
150
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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3
NDT02N60Z
TYPICAL CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
10,000
I
D
= 50 mA
T = 150°C
J
1000
100
T = 125°C
J
10
1
T = 100°C
J
0.70
0.65
−50 −25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
1000
12
350
300
Q
T
10
8
C
iss
V
GS
V
DS
250
200
150
100
100
Q
Q
GD
GS
C
oss
6
10
1
4
C
V
= 300 V
T = 25°C
rss
DS
V
= 0 V
GS
J
T = 25°C
J
I
D
= 1.6 A
f = 1 MHz
2
0
50
0
0.1
1
10
100
1000
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
T = 150°C
J
T = 125°C
J
t
t
d(off)
T = 100°C
J
d(on)
10
0.1
t
t
f
T = 25°C
J
r
V
V
= 10 V
= 300 V
GS
0.01
DD
I
D
= 1.6 A
T = −55°C
J
1
0.001
0.1
1
10
100
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9 1.0 1.1
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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4
NDT02N60Z
TYPICAL CHARACTERISTICS
100
10
1
V
≤ 30 V
GS
Single Pulse
= 25°C
T
C
10 ms
100 ms
1 ms
0.1
10 ms
R
Limit
0.01
DS(on)
Thermal Limit
Package Limit
dc
0.001
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
100
10
1
Duty Cycle = 0.5
0.2
0.1
R
= Steady State = 61°C/W
q
JA
0.05
0.02
0.01
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
t, TIME (s)
Figure 14. Thermal Impedance (Junction−to−Ambient)
ORDERING INFORMATION
Device
†
Package
Shipping
NDT02N60ZT1G
NDT02N60ZT3G
1000 / Tape & Reel
4000 / Tape & Reel
SOT−223
(Pb−Free, Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NDT02N60Z
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
4
2
H
E
E
1
3
b
e1
2.00
7.30
10°
0.069
0.276
−
0.078
0.287
10°
e
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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NDT02N60Z/D
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