NFAM0512L5B [ONSEMI]
Intelligent Power Module, SPM31, 1200V, 5A;
| 型号： | NFAM0512L5B |
| 厂家： | 
ONSEMI |
| 描述： | Intelligent Power Module, SPM31, 1200V, 5A |
| 文件： | 总10页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Intelligent Power Module (IPM)
1200 V, 5 A
Advance Information
NFAM0512L5B
General Description
www.onsemi.com
The NFAM0512L5B is a fully−integrated inverter power module
consisting of an independent High side gate driver, LVIC, six IGBT’s
and a temperature sensor (VTS), suitable for driving permanent
magnet synchronous (PMSM) motors, brushless DC (BLDC) motors
and AC asynchronous motors. The IGBT’s are configured in a
three−phase bridge with separate emitter connections for the lower
legs for maximum flexibility in the choice of control algorithm.
The power stage has under−voltage lockout protection (UVP).
Internal boost diodes are provided for high side gate boost drive.
Features
• Three−phase 1200 V, 5 A IGBT Module with Independent Drivers
• Active Logic Interface
DIP39, 54.5x31.0 EP−2
CASE MODGX
• Built−in Under−voltage Protection (UVP)
• Integrated Bootstrap Diodes and Resistors
MARKING DIAGRAM
• Separate Low−side IGBT Emitter Connections for Individual Current
Sensing of Each Phase
• Temperature Sensor (VTS)
NFAM0512L5B
ZZZATYWW
• UL1557 Certified (File No.339285)
• This Device is Pb−Free and RoHS Compliant
Typical Application
• Industrial Drives
• Industrial Pumps
• Industrial Fans
Device marking is on package top side
NFAM0512L5B = Specific Device Code
ZZZ
A
T
= Assembly Lot Code
= Assembly Location
= Test Location
= Year
• Industrial Automation
P
U
V
W
Y
VS(U)
VB(U)
VDD(UH)
HIN(U)
VS(V)
High Side
HVIC1
WW
= Work Week
HS1
HS2
HS3
VB(V)
VDD(VH)
HIN(V)
High Side
HVIC2
HS1
LS1
HS2
LS2
HS3
LS3
ORDERING INFORMATION
VS(W)
VB(W)
VDD(WH)
HIN(W)
†
Shipping
High Side
HVIC3
Package
(Qty / Packing)
Device
VTS
LIN(U)
90 / BOX
NFAM0512L5B DIP39, 31.0x54.5
(Pb−Free)
Low Side
LVIC
LIN(V)
LS1
LS2
LS3
LIN(W)
VFO
with
CFOD
CIN
Protection
VSS
VDD(L)
NU
NV
NW
Figure 1. Application Schematic
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2020 − Rev. P0
NFAM0512L5B/D
NFAM0512L5B
APPLICATION SCHEMATIC
VB(U) (3)
VS(U) (1)
N.C (38)
P (37)
+
CS
C1
HIN (U) (6)
VB
HIN
HOUT
HVIC 1
VDD(UH) (4)
VDD
VSS
U (36)
VS
VB(V) (9)
VS(V) (7)
VB
HOUT
HIN (V) (12)
HIN
VDD(VH) (10)
HVIC 2
VDD
VSS
V (35)
VS
Motor
VB(W) (15)
VS(W) (13)
MCU
HIN (W) (18)
VB
HOUT
HIN
VDD(WH) (16)
HVIC 3
VDD
VSS
W (34)
VS
VTS (20)
VTS
OUT(U)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
LIN(U)
LIN(V)
LIN(W)
NU (33)
5V line
LVIC
VFO (24)
OUT(V)
VFO
CFOD
CIN
CFOD (25)
NV (32)
NW (31)
CIN (26)
15V line
VDD(L) (28)
VDD
OUT(W)
VSS (27)
VSS
Signal for short circuit trip
Phase current
Figure 2. Application Schematic − Adjustable Option
www.onsemi.com
2
NFAM0512L5B
BLOCK DIAGRAM
N.C (38)
P (37)
VS(U) (1)
VB(U) (3)
VB
VDD(UH) (4)
HIN(U) (6)
HOUT
VDD
HVIC 1
HIN
VS
VSS
U (36)
V (35)
W (34)
VS(V) (7)
VB(V) (9)
VB
VDD(VH) (10)
HIN(V) (12)
HOUT
VDD
HVIC 2
HIN
VS
VSS
VS(W) (13)
VB(W) (15)
VB
VDD(WH) (16)
HIN(W) (18)
HOUT
VDD
HVIC 3
HIN
VS
VSS
OUT(U)
VTS
VTS (20)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
VFO (24)
LIN(U)
LIN(V)
NU (33)
NV (32)
NW (31)
LIN(W)
VFO
OUT(V)
LVIC
CFOD
CIN
CFOD (25)
CIN (26)
VSS
VSS (27)
OUT(W)
VDD(L) (28)
VDD
Figure 3. Equivalent Block Diagram
www.onsemi.com
3
NFAM0512L5B
PIN FUNCTION DESCRIPTION
Pin
1
Name
Description
VS(U)
−
High−Side Bias Voltage GND for U Phase IGBT Driving
Dummy
(2)
3
VB(U)
VDD(UH)
−
High−Side Bias Voltage for U Phase IGBT Driving
High−Side Bias Voltage for U Phase IC
Dummy
4
(5)
6
HIN(U)
VS(V)
−
Signal Input for High−Side U Phase
High−Side Bias Voltage GND for V Phase IGBT Driving
Dummy
7
(8)
9
VB(V)
VDD(VH)
−
High−Side Bias Voltage for V Phase IGBT Driving
High−Side Bias Voltage for V Phase IC
Dummy
10
(11)
12
13
(14)
15
16
(17)
18
(19)
20
21
22
23
24
25
26
27
28
(29)
(30)
31
32
33
34
35
36
37
38
(39)
HIN(V)
VS(W)
−
Signal Input for High−Side V Phase
High−Side Bias Voltage GND for W Phase IGBT Driving
Dummy
VB(W)
VDD(WH)
−
High−Side Bias Voltage for W Phase IGBT Driving
High−Side Bias Voltage for W Phase IC
Dummy
HIN(W)
−
Signal Input for High−Side W Phase
Dummy
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
Voltage Output for LVIC Temperature Sensing Unit
Signal Input for Low−Side U Phase
Signal Input for Low−Side V Phase
Signal Input for Low−Side W Phase
Fault Output
Capacitor for Fault Output Duration Selection
Input for Current Protection
Low−Side Common Supply Ground
Low−Side Bias Voltage for IC and IGBTs Driving
Dummy
VSS
VDD(L)
−
−
Dummy
NW
Negative DC−Link Input for U Phase
Negative DC−Link Input for V Phase
Negative DC−Link Input for W Phase
Output for U Phase
NV
NU
W
V
Output for V Phase
U
Output for W Phase
P
Positive DC−Link Input
N.C
No Connection
−
Dummy
1. Pins of () are the dummy for internal connection. These pins should be no connection.
www.onsemi.com
4
NFAM0512L5B
ABSOLUTE MAXIMUM RATINGS (T = 25°C) (Note 2)
C
Rating
Symbol
VPN
Conditions
P − NU, NV, NW
Value
900
Unit
V
Supply Voltage
Supply Voltage (Surge)
VPN(Surge)
VPN(PROT)
P − NU, NV, NW, (Note 3)
1000
800
V
Self Protection Supply Voltage Limit
(Short−Circuit Protection Capability
VDD = VBS = 13.5 V ~ 16.5 V,
Tj = 150°C, Vces < 1200 V,
Non−Repetitive, < 2 ms
V
Collector−Emitter Voltage
Vces
VRRM
Ic
1200
1200
V
V
A
A
V
V
Maximum Repetitive Revers Voltage
Each IGBT Collector Current
5
Each IGBT Collector Current (Peak)
Icp
Under 1 ms Pulse Width
10
Control Supply Voltage High−Side
Control Bias Voltage
VDD
VBS
VDD(UH, VH, WH), VDD(L) − VSS
−0.3 to 20
−0.3 to 20
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
Input Signal Voltage
VIN
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W) − VSS
−0.3 to VDD
V
Fault Output Supply Voltage
Fault Output Current
VFO
IFO
VCIN
Pc
VFO − VSS
−0.3 to VDD
2
V
mA
V
Sink Current at VFO pin
CIN − VSS
Current Sensing Input Voltage
Corrector Dissipation
−0.3 to VDD
59
Per One Chip
W
Operating Junction Temperature
Storage Temperature
Ti
−40 to +150
−40 to +125
−40 to +125
2500
°C
Tstg
Tc
°C
Module Case Operation Temperature
Isolation Voltage
°C
Viso
60 Hz, Sinusoidal, AC 1 minute,
V rms
Connection Pins to Heat Sink Plate
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Rating
Symbol
Rth(j−c)Q
Rth(j−c)F
Conditions
Min
−
Typ
−
Max
2.1
Unit
°C/W
°C/W
Junction to Case Thermal
Resistance
Inverter IGBT Part (per 1/6 Module)
Inverter FRD Part (per 1/6 Module)
−
−
2.6
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES (Note 6)
Rating
Supply Voltage
Symbol
VPN
Conditions
P − NU, NV, NW
Min
−
Typ
600
15
Max
800
Unit
V
Gate Driver Supply Voltages
VDD
VDD(UH, VH, WH), VDD(L) − VSS
13.5
13.0
16.5
18.5
V
VBS
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
15
V
Supply Voltage Variation
dVDD / dt
dVBS / dt
−1
−
−
1
V/ms
PWM Frequency
Dead Time
fPWM
DT
1
3
20
−
kHz
Turn−off to Turn−on (external)
ms
www.onsemi.com
5
NFAM0512L5B
RECOMMENDED OPERATING RANGES (Note 6) (continued)
Rating
Symbol
Conditions
Min
Typ
Max
Unit
Allowable r.m.s. Current
Io
VPN = 600 V,
VDD = VBS = 15 V,
P.F. = 0.8,
Tc ≤ 125°C, Tj ≤ 150°C,
(Note 5)
f
f
=
−
−
7.7
A rms
PWM
5 kHz
=
−
−
4.0
PWM
15 kHz
Allowable Input Pulse Width
Package Mounting Torque
PWIN (on)
PWIN (off)
400 V ≤ VPN ≤ 800 V,
13.5 V ≤ VDD ≤ 16.5 V,
13.0 V ≤ VBS ≤ 18.5 V,
−40°C ≤ Tc ≤ 150°C
2.0
2.5
0.6
−
−
−
−
ms
M3 Type Screw
0.7
0.9
Nm
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Allowable r.m.s Current depends on the actual conditions.
6. Flatness tolerance of the heatsink should be within −50 mm to +100 mm.
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise noted) (Note 7)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
INVERTER SECTION
Collector−Emitter Leakage
Current
Vce = Vces, Tj = 25°C
Ices
−
−
−
−
−
1
mA
mA
V
Vce = Vces, Tj = 150°C
10
2.5
Collector−Emitter Saturation
Voltage
VDD = VBS = 15 V, IN = 5 V
Ic = 5 A, Tj = 25°C
VCE(sat)
1.75
VDD = VBS = 15 V, IN = 5 V
−
1.90
V
Ic = 5 A, Tj = 150°C
FWDi Forward Voltage
IN = 0 V, If = 5 A, Tj = 25°C
IN = 0 V, If = 5 A, Tj = 150°C
VF
−
−
1.70
1.50
1.40
0.30
2.00
0.20
0.30
1.50
0.30
2.10
0.20
0.40
2.5
V
V
High Side
Switching Times
Switching Times
VPN = 600 V, VDD(H) = VDD(L) = 15 V
Ic = 5 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
ton
tc (on)
toff
0.80
−
2.00
0.60
2.70
0.60
−
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
−
tc (off)
trr
−
−
Low Side
VPN = 600 V, VDD(H) = VDD(L) = 15 V
Ic = 5 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
ton
0.90
−
2.10
0.60
2.80
0.60
−
tc (on)
toff
−
tc (off)
trr
−
−
DRIVER SECTION
Quiescent VDD Supply Current
VDD(UH,VH,WH) = 15 V,
HIN(U,V,W) = 0 V
VDD(UH) − VSS
VDD(VH) − VSS
VDD(WH) − VSS
IQDDH
−
−
0.30
mA
VDD(L) = 15 V,
LIN(U, V, W) = 0 V
VDD(L) − VSS
IQDDL
IPDDH
−
−
−
−
3.50
0.40
mA
mA
Operating VDD Supply Current
VDD(UH, VH, WH) = 15 V,
VDD(UH) − VSS
VDD(VH) − VSS
f
= 20 kHz, Duty = 50%,
PWM
Applied to one PWM Signal Input VDD(WH) − VSS
for High−Side
VDD(L) = 15 V,
= 20 kHz, Duty = 50%,
VDD(L) − VSS
IPDDL
−
−
9.00
mA
f
PWM
Applied to one PWM Signal Input
for Low−Side
www.onsemi.com
6
NFAM0512L5B
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise noted) (Note 7) (continued)
Parameter
DRIVER SECTION
Test Conditions
Symbol
Min
Typ
Max
Unit
Quiescent VBS Supply Current
VBS = 15 V
HIN(U, V, W) = 0 V
VB(U) − VS(U)
VB(V) − VS(V)
VB(W) − VS(W)
IQBS
−
−
0.30
mA
Operating VBS Supply Current
VDD = VBS = 15 V,
VB(U) − VS(U)
VB(V) − VS(V)
IPBS
−
−
8.00
2.6
mA
f
= 20 kHz, Duty = 50%,
PWM
Applied to one PWM Signal Input VB(W) − VS(W)
for High−Side
ON Threshold Voltage
OFF Threshold Voltage
Short Circuit Trip Level
HIN(U, V, W) − VSS, LIN(U, V, W) − VSS
VIN(ON)
VIN(OF)
VCIN(ref)
UVDDD
UVDDR
UVBSD
UVBSR
VTS
V
V
V
V
V
V
V
V
0.8
0.46
10.3
10.8
10.0
10.5
0.905
VDD = 15 V, CIN−VSS
Detection Level
0.48
0.50
12.5
13.0
12.0
12.5
1.155
Supply Circuit Under−Voltage
Protection
Reset Level
Detection Level
Reset Level
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
1.030
−
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull−up
VFOH
VFOL
tFOD
4.9
−
−
0.95
−
V
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull−up
−
Fault−Output Pulse Width
CFOD = 22 nF
1.6
2.4
ms
BOOTSTRAP SECTION
Bootstrap Diode Forward Current If = 0.1 A
Built−in Limiting Resistance
VF
3.4
30
4.6
38
5.8
46
V
RBOOT
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T = T = 25_C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:
6
tFOD = 0.1 x 10 x CFOD (s)
9. Values based on design and/or characterization.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
LVIC Temperature (°C)
Figure 4. Temperature of LVIC versus VOT Characteristics
www.onsemi.com
7
NFAM0512L5B
PACKAGE DIMENSIONS
DIP39, 54.5x31.0 EP−2
CASE MODGX
ISSUE O
www.onsemi.com
8
NFAM0512L5B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
TECHNICAL SUPPORT
Email Requests to: orderlit@onsemi.com
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明