NFAM3065L4BTL [ONSEMI]
Intelligent Power Module, SPM31, 650 V, 30A (Low speed version, NTC option);
| 型号： | NFAM3065L4BTL |
| 厂家： | 
ONSEMI |
| 描述： | Intelligent Power Module, SPM31, 650 V, 30A (Low speed version, NTC option) |
| 文件： | 总10页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Intelligent Power Module (IPM)
650 V, 30 A
NFAM3065L4BTL
General Description
The NFAM3065L4BTL is a fully-integrated inverter power module
consisting of an independent High side gate driver, LVIC, six IGBT’s
and a temperature sensor (VTS or Thermistor (T)), suitable for driving
permanent magnet synchronous (PMSM) motors, brushless DC
(BLDC) motors and AC asynchronous motors. The IGBT’s are
configured in a three-phase bridge with separate emitter connections
for the lower legs for maximum flexibility in the choice of control
algorithm.
DIP39 54.5 x 31.0
CASE MODGC
The power stage has undervoltage lockout protection (UVP).
Internal boost diodes are provided for high side gate boost drive.
MARKING DIAGRAM
Features
• Three-phase 650 V, 30 A IGBT Module with Independent Drivers
• Active Logic Interface
• Built-in Undervoltage Protection (UVP)
• Integrated Bootstrap Diodes and Resistors
• Separate Low-side IGBT Emitter Connections for Individual
Current Sensing of Each Phase
• Temperature Sensor (VTS or Thermistor (T))
• UL1557 Certified (File No.339285)
• This Device is Pb−Free and RoHS Compliant
NFAM3065L4BTL
ZZZATYWW
Device marking is on package top side
NFAM3065L4BTL= Specific Device Code
ZZZ
A
T
= Assembly Lot Code
= Assembly Location
= Test Location
= Year
Y
Typical Applications
• Industrial Drives
• Industrial Pumps
• Industrial Fans
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
90 / Box
• Industrial Automation
NFAM3065L4BTL
DIP39
54.5 x 31.0
(Pb-Free)
P
U
V
W
RTH VTH
VS(U)
VB(U)
High Side
HVIC1
HS1
HS2
HS3
VDD(UH)
HIN(U)
VS(V)
VB(V)
High Side
HVIC2
HS1
LS1
HS2
LS2
HS3
LS3
VDD(VH)
HIN(V)
VS(W)
VB(W)
High Side
HVIC3
VDD(WH)
HIN(W)
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
LS1
LS2
LS3
Low Side
LVIC
with
CFOD
CIN
Protection
VSS
VDD(L)
NU
NV
NW
Figure 1. Application Schematic
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 0
NFAM3065L4BTL/D
NFAM3065L4BTL
APPLICATION SCHEMATIC
5V line
RTH (39)
VTH (38)
* NTC Thermistor
VB(U) (3)
VS(U) (1)
P (37)
CS
+
C1
VB
HIN(U) (6)
HIN
HOUT
HVIC1
VDD(UH) (4)
VDD
VSS
U (36)
V (35)
W (34)
VS
VB(V) (9)
VS(V) (7)
VB
HIN(V) (12)
HIN
HOUT
HVIC2
VDD(VH) (10)
VDD
VSS
VS
Motor
VB(W) (15)
VS(W) (13)
MCU
VB
HIN(W) (18)
HIN
HOUT
HVIC3
VDD(WH) (16)
VDD
VSS
VS
VTS (20)
VTS
OUT(U)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
5V line
LVIC
OUT(V)
VFO (24)
CFOD (25)
CIN (26)
VFO
CFOD
CIN
15V line
VDD(L) (28)
VDD
OUT(W)
VSS (27)
VSS
Signal for over current trip
Phase current
Figure 2. Application Schematic − Adjustable Option
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2
NFAM3065L4BTL
BLOCK DIAGRAM
RTH (39)
* NTC Thermistor
VTH (38)
P (37)
VS(U) (1)
VB(U) (3)
VB
VDD(UH) (4)
HIN(U) (6)
VDD
HOUT
HVIC1
HVIC2
HVIC3
HIN
VS
VSS
U (36)
V (35)
W (34)
VS(V) (7)
VB(V)(9)
VB
VDD(VH) (10)
HIN(V) (12)
VDD
HOUT
HIN
VS
VSS
VS(W) (13)
VB(W) (15)
VB
VDD(WH) (16)
HIN(W) (18)
VDD
HOUT
HIN
VS
VSS
OUT(U)
VTS
VTS (20)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
VFO (24)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
OUT(V)
VFO
CFOD
CIN
LVIC
CFOD (25)
CIN (26)
VSS
VDD
VSS (27)
OUT(W)
VDD(L) (28)
Figure 3. Equivalent Block Diagram
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3
NFAM3065L4BTL
PIN FUNCTION DESCRIPTION
Pin
1
Name
VS(U)
−
Description
High-Side Bias Voltage GND for U phase IGBT Driving
Dummy
(2)
3
VB(U)
VDD(UH)
−
High-Side Bias Voltage for U phase IGBT Driving
High-Side Bias Voltage for U phase IC
Dummy
4
(5)
6
HIN(U)
VS(V)
−
Signal Input for High-Side U Phase
High-Side Bias Voltage GND for V phase IGBT Driving
Dummy
7
(8)
9
VB(V)
VDD(VH)
−
High-Side Bias Voltage for V phase IGBT Driving
High-Side Bias Voltage for V phase IC
Dummy
10
(11)
12
13
(14)
15
16
(17)
18
(19)
20
21
22
23
24
25
26
27
28
(29)
(30)
31
32
33
34
35
36
37
38
39
HIN(V)
VS(W)
−
Signal Input for High-Side V Phase
High-Side Bias Voltage GND for W phase IGBT Driving
Dummy
VB(W)
VDD(WH)
−
High-Side Bias Voltage for W phase IGBT Driving
High-Side Bias Voltage for W phase IC
Dummy
HIN(W)
−
Signal Input for High-Side W Phase
Dummy
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
Voltage Output for LVIC Temperature Sensing Unit
Signal Input for Low-Side U Phase
Signal Input for Low-Side V Phase
Signal Input for Low-Side W Phase
Fault Output
Capacitor for Fault Output Duration Selection
Input for Current Protection
VSS
VDD(L)
−
Low-Side Common Supply Ground
Low-Side Bias Voltage for IC and IGBTs Driving
Dummy
−
Dummy
NW
Negative DC-Link Input for U Phase
Negative DC-Link Input for V Phase
Negative DC-Link Input for W Phase
Output for U Phase
NV
NU
W
V
Output for V Phase
U
Output for W Phase
P
Positive DC-Link Input
VTH
RTH
Thermistor Bias Voltage (T) / Not connection
Series Resister for Thermistor (Temperature Detection) *optional for T
1. Pins of () are the dummy for internal connection. These pins should be no connection.
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NFAM3065L4BTL
ABSOLUTE MAXIMUM RATINGS (T = 25°C) (Note 2)
C
Symbol
VPN
Rating
Supply Voltage
Supply Voltage (Surge)
Conditions
Value
450
Unit
V
P−NU, NV, NW
VPN(surge)
VPN(PROT)
P−NU, NV, NW (Note 3)
550
V
Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VDD = VBS = 13.5 V to 16.5 V,
Tj = 150°C, VCES < 650 V,
Non-Repetitive, < 2 ms
400
V
Vces
VRRM
Ic
Collector-emitter Voltage
650
650
V
V
A
A
V
V
Maximum Repetitive Revers Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Control Supply Voltage
30
Icp
Under 1ms Pulse Width
60
VDD
VBS
VDD(UH,VH,WH), VDD(L)−VSS
−0.3 to 20
−0.3 to 20
High-Side Control Bias voltage
VB(U)−VS(U), VB(V)−VS(V),
VB(W)−VS(W)
VIN
Input Signal Voltage
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W)–VSS
−0.3 to VDD
V
VFO
IFO
VCIN
Pc
Fault Output Supply Voltage
Fault Output Current
VFO–VSS
−0.3 to VDD
2
V
mA
V
Sink Current at VFO pin
CIN–VSS
Current Sensing Input Voltage
Corrector Dissipation
−0.3 to VDD
113
Per One Chip
W
Tj
Operating Junction Temperature
Storage Temperature
−40 to +150
−40 to +125
−40 to +125
°C
°C
°C
Tstg
Tc
Module Case Operation
Temperature
Viso
Isolation Voltage
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to Heat Sink Plate
2500
V rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Symbol
Rating
Conditions
Min
−
Typ
−
Max
1.1
Unit
°C/W
°C/W
R
Junction-to-Case Thermal
Resistance
Inverter IGBT Part (per 1/6 module)
Inverter FWD Part (per 1/6 module)
th(j-c)Q
R
−
−
2.2
th(j-c)F
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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5
NFAM3065L4BTL
RECOMMENDED OPERATING CONDITIONS
Symbol
VPN
Rating
Supply Voltage
Conditions
Min
−
Typ
300
15
Max
400
Unit
V
P−NU, NV, NW
VDD
Gate Driver Supply
Voltages
VDD(UH,VH,WH), VDD(L)−VSS
13.5
13.0
16.5
18.5
V
VBS
VB(U)−VS(U), VB(V)−VS(V),
15
V
VB(W)−VS(W)
dVDD / dt,
dVBS / dt
Supply Voltage Variation
−1
−
1
V/ms
f
PWM Frequency
Dead Time
1
1.5
−
−
−
−
20
−
kHz
ms
PWM
DT
Turn-off to Turn-on (external)
Io
Allowable r.m.s. Current
VPN = 300 V,
VDD = 15 V,
P.F. = 0.8
f
= 5 kHz
21.2
A rms
PWM
Tc ≤ 125°C,
Tj ≤ 150°C
(Note 5)
f
= 15 kHz
−
−
17.2
PWM
PWIN (on)
PWIN (off)
Allowable Input Pulse
Width
200 V ≤ VPN ≤ 400 V
13.5 V ≤ VDD ≤ 16.5 V
13.0 V ≤ VBS ≤ 18.5 V
−20°C ≤ Tc ≤ 100°C
1.0
1.5
0.6
−
−
−
−
ms
Package Mounting Torque
M3 type screw
0.7
0.9
Nm
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Allowable r.m.s current depends on the actual conditions.
6. Flatness tolerance of the heatsink should be within −50 mm to +100 mm.
ELECTRICAL CHARACTERISTICS (T = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INVERTER SECTION
Ices
Collector-Emitter Leakage
Current
Vce = Vces, Tj = 25°C
−
−
−
−
−
1
mA
mA
V
Vce = Vces, Tj = 150°C
10
VCE(sat)
Collector-Emitter Saturation
Voltage
VDD = VBS = 15 V, IN = 5 V
Ic = 30 A, Tj = 25°C
1.60
2.30
VDD = VBS = 15 V, IN = 5 V
−
1.80
−
V
Ic = 30 A, Tj = 150°C
VF
FWDi Forward Voltage
IN = 0 V, Ic = 30 A, Tj = 25°C
IN = 0 V, Ic = 30 A, Tj = 150°C
−
−
2.00
2.00
1.60
0.50
1.60
0.25
0.15
1.70
0.50
1.60
0.25
0.15
2.40
−
V
V
ton
tc(on)
toff
Switching Times
High Side VPN = 300 V, VDD(H) = VDD(L) = 15 V
1.00
−
2.20
1.00
2.20
0.75
−
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
−
tc(off)
trr
−
−
ton
Low Side
VPN = 300 V, VDD(H) = VDD(L) = 15 V
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
1.10
−
2.30
1.00
2.20
0.75
−
tc(on)
toff
−
tc(off)
trr
−
−
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NFAM3065L4BTL
ELECTRICAL CHARACTERISTICS (T = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) (continued)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRIVER SECTION
IQDDH
Quiescent VDD Supply
Current
VDD(UH,VH,WH) = 15 V,
HIN(U,V,W) = 0 V
VDD(UH)−VSS
VDD(VH)−VSS
VDD(WH)−VSS
−
−
0.30
mA
IQDDL
IPDDH
VDD(L) = 15 V,
LIN(U,V,W) = 0 V
VDD(L)−VSS
−
−
−
−
3.50
0.40
mA
mA
Operating VCC Supply
Current
VDD(UH,VH,WH) = 15 V,
VDD(UH)−VSS
VDD(VH)−VSS
VDD(WH)−VSS
f
= 20 kHz, Duty =
PWM
50%, Applied to one PWM
Signal Input for High-Side
IPDDL
VDD(L) = 15 V,
VDD(L)−VSS
−
−
6.00
mA
f
= 20 kHz, Duty =
PWM
50%, Applied to one PWM
Signal Input for Low-Side
IQBS
IPBS
Quiescent VBS Supply
Current
VBS = 15 V,
HIN(U,V,W) = 0 V
VB(U)−VS(U)
VB(V)−VS(V)
VB(W)−VS(W)
−
−
−
−
0.30
5.00
mA
mA
Operating VBS Supply
Current
VDD = VBS = 15 V,
VB(U)−VS(U)
VB(V)−VS(V)
VB(W)−VS(W)
f
= 20 kHz, Duty =
PWM
50%, Applied to one PWM
Signal Input for High-Side
VIN(ON)
VIN(OFF)
VCS(ref)
UVDDD
UVDDR
UVBSD
UVBSR
VTS
ON Threshold Voltage
OFF Threshold Voltage
Short Circuit Trip Level
HIN(U,V,W)−VSS, LIN(U,V,W)−VSS
−
−
2.6
−
V
V
V
V
V
V
V
V
0.8
−
0.48
−
VDD = 15 V, CIN−VSS
Detection Level
0.46
10.3
10.8
10.0
10.5
0.905
0.50
12.5
13.0
12.0
12.5
1.155
Supply Circuit
Under-Voltage Protection
Reset Level
−
Detection Level
−
Reset Level
−
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
1.030
VFOH
VFOL
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull-up
4.9
−
−
−
−
0.95
−
V
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull-up
t
Fault-Output Pulse Width
CFOD = 22 nF
If = 0.1 A
1.6
2.4
ms
FOD
BOOTSTRAP SECTION
VF
Bootstrap Diode Forward
Voltage
3.4
30
4.6
38
5.8
46
V
RBOOT
Built-in Limiting Resistance
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T = T = 25_C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. The fault-out pulse width t
depends on the capacitance value of CFOD according to the following approximate equation:
FOD
6
t
= 0.1 × 10 × CFOD (s).
FOD
9. Values based on design and/or characterization.
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7
NFAM3065L4BTL
Temperature of LVIC versus VTS Characteristics
4,0
3,5
3,0
2,5
2,0
1,5
1,0
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
LVIC Temperature (5C)
Figure 4. Temperature of LVIC versus VTS Characteristics
Table 1. THERMISTOR CHARACTERISTICS (INCLUDED ONLY IN NFAM3060L4BT)
Parameter
Resistance
Symbol
Condition
Min
Typ
Max
Unit
R
Tc = 25°C
46.530
1.344
4009.5
−40
47
1.406
4050
−
47.47
1.471
4090.5
+125
kW
kW
K
25
Resistance
R
Tc = 100°C
125
B-Constant (25−50°C)
Temperature range
−
−
B
−
°C
10000
1000
100
10
min
typ
max
1
−40 −30 −20 −10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
LVIC Temperature (5C)
Figure 5. Thermistor Resistance versus Case Temperature
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MINI DIP39, 31.0x54.5
CASE MODGC
ISSUE A
DATE 19 MAR 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXXXX = Specific Device Code
ZZZ
AT
Y
= Assembly Lot Code
= Assembly & Test Location
= Year
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON91300G
MINI DIP39, 31.0x54.5
PAGE 1 OF 1
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