NGTB20N60L2TF1G [ONSEMI]
IGBT，N 沟道 600V，20A，VCE（sat）； 1.45V TO-3PF-3L，带低 VF 开关二极管;
| 型号： | NGTB20N60L2TF1G |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，N 沟道 600V，20A，VCE（sat）； 1.45V TO-3PF-3L，带低 VF 开关二极管 开关 双极性晶体管 二极管 |
| 文件： | 总7页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB20N60L2TF1G
N-Channel IGBT
www.onsemi.cn
600V, 20A, V (sat);1.45V TO-3PF-3L
CE
V 开关二极管内置
F
低
主要特长
IGBT V (sat)=1.45V typ. (I =20A, V =15V)
适应全绝缘型封装
增强型 (Enhancement type)
最高结温 Tj=175C
CE GE
C
IGBT t =67ns typ.
f
Diode V =1.5V typ. (I =20A)
F
F
Diode t =70ns typ.
rr
应用
白物家电的功率因数校正
通用变频器 (General purpose inverter)
规格
绝对最大额定值 / Ta = 25C (除非特殊指定)
参数
记号
CES
GES
条件
额定值
单位
V
集电极-发射极电压(Collector to Emitter Voltage)
栅极-发射极电压(Gate to Emitter Voltage)
V
V
600
20
V
@ Tc=25C *2
@ Tc=100C *2
40
A
集电极电流(Collector Current) (DC)
I *1
C
Limited by Tjmax
20
A
集电极电流(Collector Current) (脉冲)
二极管平均输出电流(Diode Average Output Current
允许功耗(Allowable Power Dissipation)
结温(Junction Temperature)
I
I
Pulse width Limited by Tjmax
80
A
CP
20
64
A
O
P
Tc=25C (我司的理想散热条件) *2
W
C
C
D
Tj
175
储存温度(Storage Temperature)
Tstg
55 to +175
注 : *1 集电极电流由下式计算:
Tjmax - Tc
I (Tc)=
C
R (j-c)×
th
V
(sat)(Tjmax, I (Tc))
C
CE
*2 我司的条件为背面散热。 方法为:器件的背面涂上硅脂, 然后将该器件贴在 铝制的水冷散热器上。
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
订单及封装情况
器件名称
出货包装
封装
注解
无铅
TO-3PF-3L
SC-94
30
NGTB20N60L2TF1G
pcs. / tube
印刷图
电气连接
2
GTB20N
LOT No.
60L2
1
3
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 0
1
Publication Order Number :
NGTB20N60L2TF1GCN/D
NGTB20N60L2TF1G
电气特性 / Ta = 25C (除非特殊指定)
额定值
参数
记号
条件
单位
min
600
typ
max
集电极-发射极击穿电压
V(
)
I
=500A, V =0V
C GE
V
BR CES
(Collector to Emitter Breakdown Voltage)
10
A
集电极-发射极截止电流
V
=600V, V =0V
GE
Tc=25C
CE
I
I
CES
(Collector to Emitter Cutoff Current)
Tc=150C
1
mA
栅极-发射极漏电流
V
GE
=20V, V
=0V
100
nA
V
GES
CE
(Gate to Emitter Leakage Current)
栅极-发射极阈值电压
V
(th)
GE
V
V
=20V, I =250A
4.5
6.5
CE
C
(Gate to Emitter threshold voltage)
1.45
1.8
1.65
V
V
集电极-发射极饱和电压
=15V, I =20A
Tc=25C
GE
C
V
V
(
)
CE sat
(Collector to Emitter Saturated Voltage)
Tc=150C
正向二极管电压(Forward Diode Voltage)
输入电容(Input Capacitance)
I =20A
F
1.5
V
F
Cies
2000
60
pF
pF
输出电容(Output Capacitance)
Coes
V
CE
=20V,f=1MHz
反向传输电容
Cres
50
pF
(Reverse Transfer Capacitance)
开启迟延时间(Turn-on delay time)
t (on)
60
37
ns
ns
ns
ns
ns
ns
nC
nC
d
上升时间(Rise Time)
t
r
V
CC
=300V,I =20A
C
=30,L=200H
开启时间(Turn-ON Time)
ton
400
193
67
R
V
G
=0V/15V, Vclamp=400V
关断迟延时间(Turn-OFF Delay Time)
下降时间(Fall Time)
t (off)
d
GE
See Fig.1, Fig.2
t
f
关断时间(Turn-OFF Time)
总栅极电荷(Total Gate Charge)
栅极-发射极电荷(Gate to Emitter charge)
toff
281
84
Qg
Qge
16
V
CE
=300V, V =15V, I =20A
GE
C
栅极-集电极米勒电荷
Qgc
37
70
nC
ns
(Gate to Collector “Miller” Charge)
二极管反向恢复时间
t
I =10A , di/dt=100A/s, V =50V See Fig.3
F CC
rr
(Diode Reverse Recovery Time)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
热特性 / Ta = 25C (除非特殊指定)
参数
记号
条件
额定值
单位
热阻 IGBT(结到外壳
Thermal Resistance IGBT (junction- case)
热阻二极管 结到外壳
Thermal Resistance Diode (junction- case)
热阻 结到环境
Thermal Resistance (junction- atmosphere)
)
Rth(j-c)(IGBT)
Rth(j-c)(Diode)
Rth(j-a)
Tc=25
Tc=25
C (我司的理想散热条件)*2
C (我司的理想散热条件)*2
2.33
2.36
47.5
C /W
C /W
C /W
(
)
(
)
www.onsemi.cn
2
NGTB20N60L2TF1G
图 1 : 开关时间测试电路
图 2 : 时间图
Clamp Di
V
GE
90%
10%
0
200H
DUT
I
C
90%
V
90%
CC
R
G
10%
10%
10%
10%
V
CE
0
NGTB20N60L2TF1G
t
t
r
f
t (off)
d
t (on)
d
t
t
on
off
IT16383
图 3 : 反向恢复时间测试电路
DUT
NGTB20N60L2TF1G
500H
V
CC
Driver IGBT
www.onsemi.cn
3
NGTB20N60L2TF1G
www.onsemi.cn
4
NGTB20N60L2TF1G
www.onsemi.cn
5
NGTB20N60L2TF1G
www.onsemi.cn
6
NGTB20N60L2TF1G
封装尺寸
单位: mm
TO-3PF-3L
CASE 340AH
ISSUE A
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
P
A
E
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
A1
Q
H1
MILLIMETERS
DIM MIN
MAX
5.70
3.20
3.50
2.20
0.95
2.15
4.20
1.10
24.70
25.30
3.70
15.70
5.55
10.20
19.50
5.20
2.20
3.80
4.70
A
A1
A2
A3
b
b2
b3
c
5.30
2.80
3.10
1.80
0.65
1.90
3.80
0.80
24.30
D
D2
D
L2
D3
D2 24.70
L1
D3
E
e
H1
L
L1
L2
P
3.30
15.30
5.35
9.80
19.10
4.80
1.90
3.40
4.30
NOTE 3
L
Q
1
2
3
c
3X
b
3X b2
A3
A2
b3
e
1 : Gate
2 : Collector
3 : Emitter
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.cn
7
相关型号：
©2020 ICPDF网 联系我们和版权申明