NGTB20N120IHWG [ONSEMI]
IGBT，20 A，1200V，TO247;
| 型号： | NGTB20N120IHWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，20 A，1200V，TO247 双极性晶体管 |
| 文件： | 总8页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB20N120IHWG
IGBT - Induction Cooking
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on−state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.
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Features
20 A, 1200 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• This is a Pb−Free Device
VCEsat = 2.20 V
Eoff = 0.48 mJ
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−emitter voltage @ T = 25°C
V
CES
1200
J
Collector current
@ TC = 25°C
I
C
A
40
20
@ TC = 100°C
Pulsed collector current, T
limited
I
80
A
A
G
pulse
CM
by T
, 10 ms Pulse, V = 15 V
C
Jmax
GE
TO−247
CASE 340AL
E
Diode forward current
@ TC = 25°C
I
F
40
20
@ TC = 100°C
MARKING DIAGRAM
Diode pulsed current, T
limited
I
80
A
V
pulse
FM
by T
, 10 ms Pulse, V = 0 V
Jmax
GE
Gate−emitter voltage
Transient Gate−emitter voltage
V
$20
$25
GE
(T
pulse
= 5 ms, D < 0.10)
20N120IH
AYWWG
Power Dissipation
P
W
D
@ TC = 25°C
@ TC = 100°C
341
170
Operating junction temperature range
Storage temperature range
T
−40 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB20N120IHWG
Package
Shipping
TO−247
30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 1
NGTB20N120IHW/D
NGTB20N120IHWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.44
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 20 A
V
CEsat
−
−
2.20
2.30
2.65
−
GE
C
V
GE
= 15 V, I = 20 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.1
2.8
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 150°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
3590
90
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
70
res
Q
150
31
nC
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 600 V, I = 20 A, V = 15 V
ge
gc
C
GE
Q
67
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
170
155
0.48
185
210
0.92
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 600 V, I = 20 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 600 V, I = 20 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 20 A
V
F
−
−
2.2
3.8
2.75
GE
F
V
GE
= 0 V, I = 20 A, T = 175°C
F J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB20N120IHWG
TYPICAL CHARACTERISTICS
60
50
40
30
20
60
T = 150°C
T = 25°C
J
J
V
= 11 V
to 20 V
GE
V
= 11 V
to 20 V
GE
10 V
50
40
30
20
10 V
9 V
9 V
8 V
7 V
8 V
7 V
10
0
10
0
0
1
2
3
4
5
6
7
8
0
1
2
, COLLECTOR−EMITTER VOLTAGE (V)
CE
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
50
40
30
20
10000
1000
C
ies
100
10
C
oes
C
res
T = 150°C
J
T = 25°C
J
10
0
T = 25°C
J
1
0
1
2
3
4
5
6
7
8
9
10 11
0
10 20
30 40 50
60 70
80
90 100
V
GE
, GATE−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Transfer Characteristics
Figure 4. Typical Capacitance
70
16
14
12
10
8
60
50
40
30
20
10
0
T = 25°C
J
V
CE
= 600 V
6
4
T = 150°C
J
V
CE
= 600 V
V
GE
= 15 V
2
0
I
C
= 20 A
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
20 40 60 80 100 120 140 160 180 200
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 5. Diode Forward Characteristics
Figure 6. Typical Gate Charge
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3
NGTB20N120IHWG
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
V
V
= 600 V
= 15 V
= 20 A
CE
V
V
= 600 V
= 15 V
= 20 A
CE
GE
E
off
GE
I
C
I
C
Rg = 10 W
Rg = 10 W
t
f
t
d(off)
100
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Switching Loss vs. Temperature
Figure 8. Switching Time vs. Temperature
1000
100
10
1000
100
50 ms
100 ms
1 ms
dc operation
10
1
Single Nonrepetitive
1
Pulse T = 25°C
C
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
C
GE
0.1
1
10
100
1000
10k
1
10
100
1000
10k
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 9. Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
1
50% Duty Cycle
R
= 0.44
q
JA
20%
10%
0.1
0.01
R
C
R
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
0.08113 0.003898
0.118279 0.008455
i
i
5%
2%
0.027490
0.076823
73.79876
0.115034
0.130170
0.001355
C
n
0.001
0.0001
Duty Factor = t /t
1
2
Single Pulse
Peak T = P
x Z
+ T
JC C
q
J
DM
1E−06
1E−05
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 11. IGBT Transient Thermal Impedance
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4
NGTB20N120IHWG
Figure 12. Test Circuit for Switching Characteristics
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5
NGTB20N120IHWG
Figure 13. Definition of Turn Off Waveform
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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相关型号：
NGTB20N120LWG
Incorporated into the device is a rugged coâpackaged free wheeling diode with a low forward voltage.
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