NGTB30N135IHRWG [ONSEMI]
IGBT, 1350V 30A FS2-RC Induction Heating;
| 型号： | NGTB30N135IHRWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 1350V 30A FS2-RC Induction Heating 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB30N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
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30 A, 1350 V
Features
V
CEsat = 2.30 V
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
Eoff = 0.85 mJ
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage @
J
VCES
1350
V
T = 25°C
Collector current
IC
ICM
IF
A
A
A
A
V
G
TO−247
CASE 340AL
@ TC = 25°C
60
30
C
@ TC = 100°C
E
Pulsed collector current, T
120
pulse
limited by T
GE
10 ms pulse,
Jmax
V
= 15 V
MARKING DIAGRAM
Diode forward current
@ TC = 25°C
60
30
@ TC = 100°C
Diode pulsed current, T
limited
IFM
120
pulse
by T
GE
10 ms pulse,
Jmax
= 0 V
V
30N135IHR
AYWWG
Gate−emitter voltage
Transient Gate−emitter Voltage
(T = 5 ms, D < 0.10)
VGE
$20
25
pulse
Power Dissipation
PD
W
@ TC = 25°C
394
197
@ TC = 100°C
Operating junction temperature
range
T
−40 to +175
°C
J
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Storage temperature range
T
stg
−55 to +175
°C
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
30 Units / Rail
NGTB30N135IHRWG TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 0
NGTB30N135IHR/D
NGTB30N135IHRWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.38
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 5 mA
V
(BR)CES
1350
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
GE
= 15 V, I = 30 A
V
CEsat
−
−
2.30
2.50
2.65
−
C
V
GE
= 15 V, I = 30 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1350 V
CE J =
I
−
−
−
−
0.5
2.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1350 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
5290
124
100
234
39
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 30 A, V = 15 V
C GE
ge
gc
105
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
250
150
0.85
265
225
1.90
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 600 V, I = 30 A
C
CC
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 600 V, I = 30 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 30 A
V
F
−
−
2.10
3.20
2.40
−
GE
F
V
GE
= 0 V, I = 30 A, T = 175°C
F
J
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2
NGTB30N135IHRWG
TYPICAL CHARACTERISTICS
250
200
150
100
50
250
T = 25°C
T = 150°C
J
J
V
= 20 to 15 V
GE
13 V
13 V
V
= 20 to 15 V
11 V
10 V
GE
200
150
100
50
11 V
10 V
9 V
9 V
8 V
8 V
7 V
7 V
7
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
250
200
150
100
50
160
140
120
100
80
11 V
V
= 20 to 15 V
13 V
GE
T = 25°C
J
10 V
T = 150°C
J
60
9 V
8 V
40
7 V
20
T = −40°C
J
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.00
100000
10000
1000
100
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
I
= 60 A
C
C
ies
I
C
= 30 A
I
C
= 15 A
C
oes
C
res
10
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10
20
30 40 50
60
70
80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N135IHRWG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
8
T = 25°C
J
6
4
2
0
T = 150°C
J
V
V
= 600 V
= 15 V
= 30 A
CE
GE
I
C
0
0.5
1.0
1.5
2.0
2.5 3.0
3.5
4.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.5
2
1000
100
t
d(off)
E
off
t
f
1.5
1
V
V
= 600 V
= 15 V
= 30 A
CE
V
V
= 600 V
= 15 V
= 30 A
CE
GE
0.5
0
GE
I
C
I
C
Rg = 10 W
Rg = 10 W
10
0
20
40
60
80
100
120 140 160
0
20
40
60
80
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
7
6
5
4
3
2
1
0
1000
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
t
d(off)
Rg = 10 W
E
off
t
f
100
10
V
= 600 V
= 15 V
CE
V
GE
T = 150°C
J
Rg = 10 W
5
20
35
50
65
80
5
20
35
50
65
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB30N135IHRWG
TYPICAL CHARACTERISTICS
10000
1000
100
3
2.5
2
E
off
t
d(off)
t
f
1.5
1
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
0.5
0
T = 150°C
T = 150°C
J
J
I
C
= 30 A
I
C
= 30 A
10
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
2.5
2
1000
E
off
t
d(off)
1.5
1
t
f
100
10
I
V
= 30 A
C
I
V
= 30 A
C
= 15 V
GE
0.5
0
= 15 V
GE
T = 150°C
Rg = 10 W
J
T = 150°C
Rg = 10 W
J
250 300 350 400 450 500 550 600 650 700 750 800
250 300 350 400 450 500 550 600 650 700 750 800
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
10
1 ms
100 ms
V
GE
= 15 V, T = 125°C
C
50 ms
dc operation
1
Single Nonrepetitive
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB30N135IHRWG
TYPICAL CHARACTERISTICS
140
120
100
80
1650
1600
T
= 80°C
C
1550
1500
1450
1400
1350
1300
T
= 110°C
= 10 W,
C
60
40
V
V
= 600 V, T ≤ 175°C, R
J gate
CE
20
= 0/15 V, T
= 80°C or 110°C
GE
case
(as noted), D = 0.5
0
0.01
0.1
1
10
100
1000
−40
−15
10
35
60
85
110 135
FREQUENCY (kHz)
T , JUNCTION TEMPERATURE (°C)
J
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
1
R
= 0.385
Case
q
JC
50% Duty Cycle
R (°C/W)
t (sec)
i
i
20%
10%
5%
0.1
0.01
0.005757 0.000174
0.000122 0.025884
0.007153 0.001398
0.010643 0.002971
0.016539 0.006046
0.048615 0.006505
0.019522 0.051225
0.015924 0.198582
R
C
R
C
R
Junction
1
1
2
2
n
C = t /R
i
i
i
2%
C
n
0.051783 0.193115
0.025689 1.23097
0.180713 0.553364
Duty Factor = t /t
1
2
Single Pulse
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
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6
NGTB30N135IHRWG
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB30N135IHRWG
Figure 23. Definition of Turn On Waveform
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8
NGTB30N135IHRWG
Figure 24. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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