NGTB30N65IHL2WG [ONSEMI]
IGBT 650V 30A FS2 电感加热;
| 型号： | NGTB30N65IHL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650V 30A FS2 电感加热 双极性晶体管 |
| 文件： | 总8页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB30N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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30 A, 650 V
Features
V
CEsat = 1.6 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
Eoff = 0.2 mJ
C
• T
= 175°C
Jmax
• Soft, Fast Free Wheeling Diode
• This is a Pb−Free Device
G
Typical Applications
• Inductive Heating
• Soft Switching
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
650
Collector current
@ TC = 25°C
A
60
30
G
TO−247
CASE 340AL
@ TC = 100°C
C
E
Pulsed collector current, T
ICM
IF
120
A
A
pulse
limited by T
Jmax
Diode forward current
@ TC = 25°C
60
30
MARKING DIAGRAM
@ TC = 100°C
Diode pulsed current, T
limited
IFM
120
A
pulse
by T
Jmax
Gate−emitter voltage
VGE
PD
$20
V
Power Dissipation
W
30N65IHL2
AYWWG
@ TC = 25°C
@ TC = 100°C
300
150
Operating junction temperature
range
T
J
−55 to +175
°C
Storage temperature range
T
−55 to +175
260
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N65IHL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2014 − Rev. 0
NGTB30N65IHL2W/D
NGTB30N65IHL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.50
1.46
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 30 A
V
CEsat
−
−
1.6
2.0
2.2
−
GE
C
V
GE
= 15 V, I = 30 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 150 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 650 V
I
−
−
−
−
0.2
2
mA
GE
CE
CES
V
GE
= 0 V, V = 650 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
3200
130
85
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
135
26
nC
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480 V, I = 30 A, V = 15 V
ge
gc
C
GE
Q
66
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
145
71
ns
d(off)
T = 25°C
J
V
CC
= 400 V, I = 30 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
0.2
151
94
mJ
ns
GE
off
t
d(off)
T = 150°C
J
V
= 400 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
0.41
mJ
V
GE
off
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 30 A
V
F
1.1
1.0
1.3
GE
F
V
GE
= 0 V, I = 30 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
T = 25°C
t
430
7700
35
ns
nc
A
J
rr
I = 30 A, V = 200 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
120
120
100
80
V
= 20 V
to 13 V
GE
V
GE
= 20 V to 13 V
T = 25°C
J
T = 150°C
J
100
80
11 V
10 V
11 V
10 V
9 V
60
60
40
40
9 V
8 V
8 V
7 V
20
0
20
0
7 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
120
100
80
V
GE
= 20 V to 13 V
11 V
10 V
T = −55°C
J
T = 25°C
J
T = 150°C
J
60
60
40
40
9 V
8 V
20
0
20
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10000
1000
100
3.00
2.50
2.00
1.50
C
ies
I
= 50 A
C
I
= 40 A
= 30 A
= 20 A
C
C
C
I
T = 25°C
J
I
C
oes
res
1.00
0.50
C
10
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10 20
30 40 50
60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
20
18
16
120
100
80
T = 25°C
J
14
12
10
8
T = 150°C
J
60
40
6
V
V
= 400 V
= 15 V
= 30 A
CE
GE
4
20
0
I
C
2
0
0
0.5
1.0
1.5
2.0
0
20
40
60
80
100 120
140 160
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
0.6
0.5
0.4
0.3
0.2
V
V
= 400 V
= 15 V
= 30 A
CE
GE
I
C
R = 10 W
g
t
d(off)
100
E
off
t
f
V
V
= 400 V
= 15 V
= 30 A
CE
GE
0.1
0
I
C
R = 10 W
g
10
0
20
40
60
80
100 120 140
160
0
20
40
60
80
100
120 140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
R = 10 W
g
E
off
t
d(off)
t
f
100
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
R = 10 W
g
J
0.2
0
10
4
14
24
34
44
54
64
74
84
4
14
24
34
44
54
64
74
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 12. Switching Time vs. IC
Figure 11. Switching Loss vs. IC
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4
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
1000
1.0
t
d(off)
0.5
100
t
f
E
off
V
V
I
= 400 V
= 15 V
= 30 A
V
V
I
= 400 V
= 15 V
= 30 A
CE
CE
GE
GE
C
C
T = 150°C
J
T = 150°C
J
0
10
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 13. Switching Loss vs. RG
Figure 14. Switching Time vs. RG
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
1000
t
d(off)
E
off
100
t
f
R = 10 W
R = 10 W
g
g
V
I
= 15 V
= 30 A
V
I
= 15 V
= 30 A
GE
GE
C
C
T = 150°C
J
T = 150°C
J
0.05
0
10
175 225
275 325
375
425 475
525 575
175 225
275
325 375
425 475
525 575
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
1000
100
10
50 ms
100 ms
dc operation
1 ms
Single Nonrepetitive
10
1
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
V
GE
= 15 V, T = 150°C
C
0.1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R
= 0.50
q
JC
20%
10%
5%
0.1
R (°C/W) C (J/W)
i
i
0.064185 0.001558
0.060802 0.005201
0.050673 0.019734
0.170671 0.018529
0.142159 0.070344
0.009510 3.325233
0.000004 26863.47
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
2%
0.01
i
i
i
C
n
0.001
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 19. IGBT Transient Thermal Impedance
10
1
R
= 1.46
q
JC
50% Duty Cycle
20%
R (°C/W) C (J/W)
i
i
0.026867 0.000037
0.000237 0.013344
0.034915 0.000286
0.039625 0.000798
0.087617 0.001141
0.161215 0.001962
0.336873 0.002968
0.265205 0.011924
0.361515 0.027661
0.148056 0.213586
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
10%
5%
i
i
i
0.1
2%
C
n
Duty Factor = t /t
Peak T = P
Single Pulse
1
2
x Z
+ T
JC C
q
J
DM
0.01
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 20. Diode Transient Thermal Impedance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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